NVBG080N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L;
| 型号： | NVBG080N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L |
| 文件： | 总8页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 80 mohm,
1200ꢀV, M1, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
110 mW @ 20 V
30 A
Drain (TAB)
NVBG080N120SC1
Features
Gate (Pin 1)
• Typ. R
= 80 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q
= 56 nC)
G(tot)
• Low Effective Output Capacitance (Typ. C = 79 pF)
Driver Source (Pin 2)
oss
• 100% Avalanche Tested
Power Source (Pins 3, 4, 5, 6, 7)
• AEC−Q101 Qualified and PPAP Capable
N−CHANNEL MOSFET
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D2PAK−7L
CASE 418BJ
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
V
V
Gate−to−Source Voltage
V
GS
−15/+25
MARKING DIAGRAM
Recommended Operation
Values of Gate−Source Voltage
T
< 175°C
= 25°C
V
GSop
−5/+20
V
C
AYWWZZ
NVBG
080120SC1
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
30
A
C
Power Dissipation
(Note 1)
P
D
179
21
W
A
A
Y
= Assembly Location
= Year
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100°C
I
D
WW = Work Week
ZZ = Lot Traceability
NVBG080120SC1 = Specific Device Code
Power Dissipation
(Note 1)
P
89
W
D
Pulsed Drain Current (Note 2)
T
= 25°C
I
110
132
A
A
C
DM
Single Pulse Surge
Drain Current
Capability
T
C
= 25°C, t = 10 ms,
I
DSC
p
ORDERING INFORMATION
R
= 4.7 W
G
†
Device
Package
Shipping
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
NVBG080N120SC1
D2PAK−7L
800 /
Tape & Reel
Source Current (Body Diode)
I
S
18
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche
E
171
mJ
AS
Energy (I = 18.5 A , L = 1 mH) (Note 3)
L
pk
Maximum Lead Temperature for Soldering,
1/8″ from Case for 10 Seconds
T
300
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 171 mJ is based on starting T = 25°C; L = 1 mH, I = 18.5 A,
AS
DD
J
AS
V
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 4
NVBG080N120SC1/D
NVBG080N120SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.84
40
Unit
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 1)
Thermal Resistance Junction−to−Ambient (Note 1)
R
θ
JC
JA
R
θ
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1200
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, refer to 25°C
D
0.5
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 1200 V
T = 25°C
100
1
mA
mA
mA
DSS
GS
J
DS
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
R
V
GS
= V , I = 5 mA
1.8
3
4.3
+20
110
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
GS
V
GS
V
DS
= 20 V, I = 20 A, T = 25°C
80
121
11
mW
mW
S
DS(on)
D
J
= 20 V, I = 20 A, T = 150°C
D
J
Forward Transconductance
g
= 20 V, I = 20 A
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0 V, f = 1 MHz,
= 800 V
1154
79
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
7.9
56
Q
V
= −5/20 V, V = 600 V,
= 20 A
G(TOT)
GS DS
I
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
10
G(TH)
Q
18
GS
Q
11
GD
f = 1 MHz
1.2
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
D
= −5/20 V, V = 800 V,
12
12
22
22
34
18
ns
d(ON)
GS
DS
I
= 20 A, R = 4.7 W,
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
21
d(OFF)
Fall Time
t
f
9
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
135
46
mJ
ON
E
OFF
E
TOT
181
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
V
GS
V
GS
= −5 V, T = 25°C
18
A
A
V
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 2)
I
= −5 V, T = 25°C
110
SDM
J
Forward Diode Voltage
V
= −5 V, I = 10 A, T = 25°C
3.9
SD
SD
J
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2
NVBG080N120SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
t
V
= −5/20 V, I = 20 A,
16.2
61.6
4.1
ns
nC
mJ
A
RR
GS
S
SD
dI /dt = 1000 A/ms
Reverse Recovery Charge
Q
RR
Reverse Recovery Energy
E
REC
RRM
Peak Reverse Recovery Current
I
7.6
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVBG080N120SC1
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
3.5
V
= 20 V
GS
19 V
3.0
2.5
2.0
1.5
V
GS
= 15 V
16 V
18 V
17 V
16 V
15 V
10 V
17 V
18 V
19 V
20 V
1.0
0.5
10
0
0
2
4
6
8
10
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.9
1.7
1.5
1.3
1.1
400
300
200
I
= 20 A
D
I
V
= 20 A
D
= 20 V
GS
T = 150°C
J
100
0
T = 25°C
J
0.9
0.7
−75 −50 −25
0
25 50 75 100 125 150 175
9
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
50
40
30
20
70
10
V
DS
= 20 V
V
= −5 V
GS
T = 25°C
J
T = 175°C
J
T = 25°C
J
T = −55°C
J
1
T = 175°C
J
10
0
T = −55°C
J
0.1
2
4
6
8
10
12
14
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVBG080N120SC1
TYPICAL CHARACTERISTICS (continued)
20
15
10
5
10K
V
DD
= 400 V
I
D
= 47 A
C
iss
1K
V
DD
= 600 V
V
DD
= 800 V
C
oss
100
C
rss
10
1
0
f = 1 MHz
= 0 V
V
GS
−5
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
175
1
0
10
20
30
40
50
60
V
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
40
30
20
V
GS
= 20 V
T = 25°C
J
T = 150°C
J
10
10
0
Typical Characteristics
R
= 0.84°C/W
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
10K
1K
1000
100
10
Single Pulse
Single Pulse
R
T
= 0.84°C/W
= 25°C
R
T
= 0.84°C/W
= 25°C
q
JC
q
JC
C
C
10 ms
100 ms
1
100
10
R
Limit
DS(on)
1 ms
Thermal Limit
Package Limit
10 ms/DC
100 1000
0.1
0.1
1
10
0.00001 0.0001 0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVBG080N120SC1
TYPICAL CHARACTERISTICS (continued)
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
P
DM
0.01
Notes:
= 0.84°C/W
Single Pulse
R
q
JC
Peak T = P
x Z
(t) + T
JC C
t
q
1
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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