NVBG160N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L;型号: | NVBG160N120SC1 |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L |
文件: | 总8页 (文件大小:322K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 160 mohm,
1200ꢀV, M1, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
224 mW @ 20 V
19.5 A
Drain (TAB)
NVBG160N120SC1
Features
• Typ. R
= 160 mW
• Ultra Low Gate Charge (typ. Q
DS(on)
Gate (Pin 1)
= 33.8 nC)
G(tot)
• Low Effective Output Capacitance (typ. C = 50.7 pF)
oss
• 100% Avalanche Tested
Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
N−CHANNEL MOSFET
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
V
V
D2PAK−7L
CASE 418BJ
Gate−to−Source Voltage
V
GS
−15/+25
Recommended Operation
T
< 175°C
= 25°C
V
−5/+20
19.5
136
V
C
GSop
Values of Gate−Source Voltage
MARKING DIAGRAM
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
A
C
AYWWZZ
NVBG
160120SC1
Power Dissipation
(Note 1)
P
D
W
A
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100°C
I
D
13.7
68
A
Y
= Assembly Location
= Year
Power Dissipation
(Note 1)
P
D
W
WW = Work Week
ZZ = Lot Traceability
NVBG160120SC1 = Specific Device Code
Pulsed Drain Current (Note 2)
T = 25°C
I
78
A
A
A
DM
Single Pulse Surge
Drain Current
Capability
T = 25°C, t = 10 ms,
A
I
140
p
DSC
R
= 4.7 W
G
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
stg
†
Device
Package
Shipping
Source Current (Body Diode)
I
13.6
120
A
S
NVBG160N120SC1
D2PAK−7L
800 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 15.5 A , L = 1 mH) (Note 3)
L
pk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Maximum Lead Temperature for Soldering,
T
300
°C
L
1/8″ from Case for 10 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 120 mJ is based on starting T = 25°C; L = 1 mH, I = 15.5 A,
AS
DD
J
AS
V
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 2
NVBG160N120SC1/D
NVBG160N120SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
1.1
40
Unit
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 1)
Thermal Resistance Junction−to−Ambient (Note 1)
R
θ
JC
JA
R
θ
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1200
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, refer to 25°C
D
0.7
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 1200 V
T = 25°C
100
1
mA
mA
mA
DSS
GS
J
DS
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
R
V
GS
= V , I = 2.5 mA
1.8
3
4.3
+20
224
365
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
GS
V
GS
V
DS
= 20 V, I = 12 A, T = 25°C
160
239
5.5
mW
mW
S
DS(on)
D
J
= 20 V, I = 12 A, T = 175°C
D
J
Forward Transconductance
g
= 10 V, I = 12 A
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0 V, f = 1 MHz,
= 800 V
678
50.7
5.87
33.8
6.1
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= −5/20 V, V = 600 V,
= 16 A
G(TOT)
GS DS
I
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
Q
11.6
9.6
GS
GD
Q
f = 1 MHz
1.39
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
D
= −5/20 V, V = 800 V,
11
11
20
20
27
15
ns
d(ON)
GS
DS
I
= 16 A, R = 6 W,
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
15
d(OFF)
Fall Time
t
f
7.4
120
28
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
mJ
E
E
OFF
TOT
148
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
V
GS
V
GS
= −5 V, T = 25°C
13.6
78
A
A
V
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 2)
I
= −5 V, T = 25°C
J
SDM
Forward Diode Voltage
V
= −5 V, I = 6 A, T = 25°C
3.9
SD
SD
J
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2
NVBG160N120SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/20 V, I = 16 A,
15
47
ns
nC
mJ
A
RR
GS
S
SD
dI /dt = 1000 A/ms
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
3.9
6.6
7.0
7.4
I
RRM
Ta
ns
ns
Discharge Time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVBG160N120SC1
TYPICAL CHARACTERISTICS
50
40
30
20
4.0
10 V
V
= 12 V
GS
3.5
V
= 20 V
GS
15 V
19 V
3.0
2.5
2.0
1.5
18 V
16 V
17 V
17 V
16 V
15 V
12 V
10 V
20 V
10
0
1.0
0.5
18 V
19 V
0
2
4
6
8
10
0
10
20
I , DRAIN CURRENT (A)
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.9
1.7
700
600
500
400
300
200
I
= 12 A
D
I
V
= 12 A
D
= 20 V
GS
1.5
1.3
1.1
T = 150°C
J
T = 25°C
J
0.9
0.7
100
0
−75 −50 −25
0
25 50 75 100 125 150 175
9
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
25
20
15
10
100
V
DS
= 20 V
V
= −5 V
GS
T = 25°C
J
T = 175°C
J
T = −55°C
J
10
T = 175°C
J
T = 25°C
J
5
0
T = −55°C
J
1
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVBG160N120SC1
TYPICAL CHARACTERISTICS (continued)
10K
20
15
10
5
V
DD
= 400 V
I
D
= 16 A
C
iss
oss
rss
1K
V
= 600 V
DD
V
DD
= 800 V
100
C
C
10
1
0
f = 1 MHz
= 0 V
V
GS
−5
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
175
0.1
0
10
20
30
40
V
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
24
20
16
12
8
V
GS
= 20 V
T = 25°C
J
10
T = 150°C
J
4
0
R
= 1.1°C/W
q
JC
1
0.001
0.01
0.1
1
5
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
10K
1K
100
10
1
Single Pulse
R
= 1.1°C/W
q
JC
T
C
= 25°C
10 ms
100 ms
1 ms
10 ms
Single Pulse
T = Max Rated
100
10
0.1
J
R
= 1.1°C/W
q
JC
= 25°C
T
C
0.01
0.1
1
10
100
1000
5000
0.00001 0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVBG160N120SC1
TYPICAL CHARACTERISTICS (continued)
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Notes:
Z (t) = r(t) x R
q
JC
P
DM
0.01
q
JC
Single Pulse
0.00001
R
= 01.1°C/W
q
JC
t
Peak T = P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.0001
0.001
t, RECTANGULAR PULSE DURATION (sec)
0.01
0.1
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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