NVBGS6D5N15MC [ONSEMI]
MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 mΩ, 121 A;
| 型号： | NVBGS6D5N15MC |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 mΩ, 121 A |
| 文件： | 总7页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, D2PAK7
150 V, 7 mW, 121 A
NVBGS6D5N15MC
Features
• Low R
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to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
150 V
7 mW @ 10 V
8.7 mW @ 8 V
121 A
Typical Applications
D (TAB)
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
G (Pin 1)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
S (Pins 2,3,4,5,6,7)
N−CHANNEL MOSFET
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
121
A
MARKING
DIAGRAM
q
JC
(Note 2)
Power Dissipation
P
238
15
W
A
D
R
(Note 2)
q
JC
AYWWZZ
NVBG
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
S6D5N15
2
q
JA
D PAK7
(Notes 1, 2)
CASE 418AY
Power Dissipation
P
D
3.7
W
R
(Notes 1, 2)
q
JA
NVBGS6D5N15 = Specific Device Code
A
Y
WW
ZZ
= Assembly Location
= Year
= Work Week
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
1800
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
= Assembly Lot Number
Source Current (Body Diode)
I
198
180
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 60 A , L = 0.1 mH)
L
pk
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
T
260
°C
L
†
Device
NVBGS6D5N15MC*
Package
Shipping
(1/8″ from case for 10 s)
2
800 / Tape &
Reel
D PAK7
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in , 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019 − Rev. 0
NVBGS6D5N15MC/D
NVBGS6D5N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.6
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 1, 2)
R
°C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
59.62
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
1
mA
mA
nA
DSS
GS
DS
J
= 120 V
T = 125°C
J
10
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
V
= 0 V, V
= 20 V
GS
GSS
DS
V
= V , I = 379 mA
2.5
3.5
−9.53
5.5
4.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
I = 250 mA, ref to 25°C
D
mV/°C
mW
GS(TH)
R
V
GS
V
GS
V
DS
= 10 V, I = 69 A
7
DS(on)
D
= 8 V, I = 34 A
5.9
8.7
D
Forward Transconductance
Gate−Resistance
g
FS
= 5 V, I = 60.5 A
88
S
D
R
T = 25°C
A
1.1
W
G
CHARGES CAPACITANCES
Input Capacitance
C
V
= 0 V, V = 75 V, f = 1 MHz
4745
1370
10.3
57
pF
nC
ISS
GS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= 10 V, V = 75 V, I = 69 A
DS D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Output Charge
Q
16
G(TH)
Q
27
GS
GD
Q
7
Q
V
V
= 10 V, V = 75 V
171
nC
ns
OSS
GS
DS
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
= 10 V, V = 75 V,
34
75
39
6
d(ON)
GS
DS
I
= 69 A, R = 6 W
D
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.92
0.82
74
1.2
V
SD
GS
J
I
= 69 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
V
S
= 0 V, dI /dt = 100 A/ms,
= 69 A
ns
RR
GS
S
I
t
t
53
a
Discharge Time
22
b
Reverse Recovery Charge
Q
141
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NVBGS6D5N15MC
TYPICAL CHARACTERISTICS
125
100
75
125
V
= 7 V
GS
V
GS
= −10 V−7 V
V
DS
= 5 V
100
75
V
= 6.5 V
GS
T = 25°C
J
50
50
V
V
= 6.0 V
= 5.5 V
GS
25
0
25
0
T = 175°C
J
V
GS
= 5.0 V
T = −55°C
J
GS
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
DS
, Drain−to−Source Voltage (V)
V
GS
, Gate−to−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
100
90
80
70
60
50
40
30
20
10
0
T = 25°C
D
T = 25°C
J
J
I
= 69 A
8
V
= 8 V
GS
7
6
V
GS
= 10 V
5
4
3
2
0
25 50 75 100 125 150 175 200 225 250
I , Drain Current (A)
6.2 6.6 7.0 7.4 7.8 8.2 8.6 9.0 9.4 9.8
, Gate−to−Source Voltage (V)
V
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
100000
10000
1000
V
GS
= 0 V
V
= 10 V
= 69 A
GS
T = 175°C
J
I
D
T = 150°C
J
1.5
1.0
T = 125°C
J
100
0.5
25
50
75
100
125
150
−50 −25
0
25 50 75 100 125 150 175
V
, Drain−to−Source Voltage (V)
T , Junction Temperature (5C)
DS
J
Figure 5. On−Resistance Variation vs.
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVBGS6D5N15MC
TYPICAL CHARACTERISTICS (Continued)
10
9
10 000
1 000
Q
G(TOT)
C
ISS
8
7
6
5
4
3
2
1
0
Q
Q
GD
GS
C
OSS
100
10
1
V
I
= 75 V
= 69 A
V
= 0 V
DS
GS
C
T = 25°C
RSS
D
J
T = 25°C
J
f = 1 MHz
0
25
50
75
100
125
150
0
5
10 15 20 25 30 35 40 45 50 55 60
Q , Total Gate Charge (nC)
V
DS
, Drain−to−Source Voltage (V)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
1000
100
10
V
V
= 10 V
= 75 V
= 69 A
V
= 0 V
GS
GS
DS
I
D
t
d(off)
t
r
t
f
T = 175°C
t
J
d(on)
T = 150°C
J
T = 25°C
J
1
T = −55°C
J
0.1
1
0.1
0.3
0.5
, Source−to−Drain Voltage (V)
SD
0.7
0.9
1.1
0
10
20
30
40
50
60
R , Gate Resistance (W)
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10
1
10 ms
100 ms
V
≤ 10 V
GS
T
= 25°C
10
1
J(initial)
Single Pulse
= 25°C
T
C
T
= 125°C
1E−04
R
Limit
J(initial)
DS(on)
1 ms
Thermal Limit
Package Limit
10 ms
100 ms & 1 s
0.1
1
10
100
1E−06
1E−05
1E−03
1E−02
1E−01 1E+00
V
DS
, Drain−to−Source Voltage (V)
Time in Avalanche (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVBGS6D5N15MC
TYPICAL CHARACTERISTICS (Continued)
1
0.1
50% Duty Cycle
20%
10%
5%
2%
0.01
1%
Single Pulse
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Figure 13. Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DATE 15 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13798G
D2PAK7 (TO−263 7 LD)
PAGE 1 OF 1
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