NVH4L080N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L;
| 型号： | NVH4L080N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L |
| 文件： | 总8页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 80 mohm,
1200ꢀV, M1, TO-247-4L
V
R
TYP
I MAX
D
DSS
DS(ON)
1200 V
80 mW
29 A
N−CHANNEL MOSFET
D
NVH4L080N120SC1
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
S1: Kelvin Source
S2: Power Source
G
S1 S2
Features
• 1200 V @ T = 175°C
J
• Max R
= 110 mW at V = 20 V, I = 20 A
GS D
DS(on)
• High Speed Switching with Low Capacitance
• 100% Avalanche Tested
D
S2
S1
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
G
TO−247−4LD
CASE 340CJ
Applications
MARKING DIAGRAM
• Automotive Auxiliary Motor Drive
• Automotive On Board Charger
• Automotive DC−DC Converter for EV/HEV
AYWWZZ
NVH4L080
N120SC1
A
= Assembly Location
Y
= Year
WW
ZZ
= Work Week
= Lot Traceability
NVH4L080N120SC1 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
30 Units /
Tube
TO−247−4L
NVH4L080N120SC1
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022− Rev. 2
NVH4L080N120SC1/D
NVH4L080N120SC1
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings
1200
Unit
V
V
Drain−to−Source Voltage
Max. Gate−to−Source Voltage
DSmax
GSmax
V
@ T < 150°C
−15 / +25
−5 / +20
V
C
V
V
(DC)
Recommended operation Values of
@ T < 150°C
V
GSop
C
Gate − Source Voltage
(AC)
Recommended operation Values of
@ T < 150°C
−5 / +20
V
A
GSop
C
Gate − Source Voltage (f > 1 Hz)
I
D
Continuous Drain Current
Pulse Drain Current
V
V
= 20 V, T = 25°C
29
21
GS
C
= 20 V, T = 100°C
GS
C
I
Pulse width tp limited by
Tj max
125
A
D(Pulse)
E
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
171
170
mJ
W
AS
P
T
T
= 25°C
tot
C
= 150°C
28
C
T , T
Operating and Storage Junction Temperature Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 171 mJ is based on starting Tj = 25°C, L = 1 mH, I = 18.5 A, , V = 50 V, R = 25 W.
AS
AS
DD
G
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
0.88
Unit
R
Thermal Resistance, Junction−to−Case
_C/W
q
JC
JA
R
Thermal Resistance, Junction−to−Ambient
40
q
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2
NVH4L080N120SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
I
I
= 100 mA, V = 0 V
1200
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 5 mA, Referenced to 25_C
−
0.3
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
= 1200 V, V = 0 V
T = 25°C
C
C
−
−
−
−
100
1.0
mA
mA
DSS
GS
T
= 150°C
I
Gate−to−Source Leakage Current
V
V
= 25 V, V = 0 V
−
−
−
−
1
mA
mA
GSS
GS
DS
I
Gate−to−Source Leakage Current,
Reverse
= −15 V, V = 0 V
−1
GSSR
GS
DS
ON CHARACTERISTICS
V
Gate−to−Source Threshold Voltage
Static Drain−to−Source On Resistance
V
GS
V
GS
V
GS
V
DS
V
DS
= V , I = 5 mA
1.8
−
2.75
80
4.3
110
162
−
V
GS(th)
DS(on)
DS
D
R
= 20 V, I = 20 A
mW
D
= 20 V, I = 20 A, T = 150°C
−
127
11.3
9.8
D
C
g
FS
Forward Transconductance
= 20 V, I = 20 A
−
S
D
= 20 V, I = 20 A, T = 150°C
−
−
D
C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 800 V, V = 0 V, f = 1 MHz
−
−
−
−
1112
80
1670
120
10
pF
pF
pF
mJ
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
6.5
32
rss
E
oss
C
Stored Energy
oss
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
V
= 800 V, I = 20 A,
−
−
−
−
−
−
−
−
−
−
−
9
18
10
43
11
−
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
W
d(on)
CC
GS
C
= −5/20 V, R = 4.7 W
G
t
r
4.2
26.8
5.4
314
32
Inductive Load, T = 25°C
C
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
E
on
E
off
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate input resistance
−
E
ts
346
56
−
Q
V
DD
V
GS
= 600 V, I = 20 A
−
g
D
= −5/20 V
Q
11
−
gs
gd
Q
12
−
R
f = 1 MHz, D−S short
1.7
−
G
DIODE CHARACTERISTICS
V
Source−to−Drain Diode Forward
V
SD
= −5 V,
T
C
= 25°C
= 150°C
= 150°C
= 25°C
−
−
−
−
−
−
−
−
−
3.7
3.3
29
18
31
80
212
9
−
−
−
−
−
−
−
−
−
V
SD
GS
Voltage
I
= 10 A
T
C
E
rec
Reverse Recovery Energy
I
= 20 A,
T
C
mJ
SD
V
V
= −5 V,
GS
R
t
Diode Reverse Recovery Time
T
C
ns
rr
= 600 V,
dI /dt = 1000 A/ms
SD
T
= 150°C
= 25°C
C
C
Q
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
T
nC
A
rr
T
= 150°C
T = 25°C
C
C
I
rrm
T
C
= 150°C
14
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVH4L080N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
70
56
42
28
14
0
8
V
GS = 20 V
VGS = 19 V
VGS = 18 V
VGS = 8 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 15 V
VGS = 16 V
GS = 17 V
6
4
2
0
VGS = 10 V
V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 18 V
VGS = 17 V
VGS = 10 V
VGS = 8 V
VGS = 16 V
VGS = 15 V
VGS = 20 V
VGS = 19 V
0
4
8
12
16
20
0
10
20
30
40
50
60
70
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
450
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 20 A
VGS = 20 V
360
270
180
90
ID = 20 A
TJ = 150oC
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150 175
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
70
56
42
28
14
0
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
TJ = 150 o
C
VDS = 20 V
TJ = 25oC
10
1
TJ = 175 o
C
TJ = −55 oC
TJ = 25 o
C
TJ = −55 oC
0.1
0
3
6
9
12
15
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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4
NVH4L080N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
20
15
10
5
10000
ID = 20 A
Ciss
VDD = 400 V
1000
VDD = 600 V
Coss
VDD = 800 V
100
Crss
10
f = 1 MHz
VGS = 0 V
1
0.1
0
0
10
20
30
40
50
60
1
10
100
800
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
30
10
40
30
20
10
0
R
qJC = 0.88 oC/W
TJ = 25oC
V
GS = 20 V
TJ = 150 oC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100000
10000
1000
SINGLE PULSE
qJC = 0.88oC/W
C = 25oC
R
100
10
1
T
10 ms
THIS AREA IS
LIMITED BY RDS(on)
100 ms
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
R
T
qJC = 0.88oC/W
Curve Bent to
Measured Data
C = 25 oC
0.01
100
0.00001
0.0001
0.001
0.01
0.1
0.1
1
10
100
1000 5000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVH4L080N120SC1
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
P
DM
0.2
0.1
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
0.01
Z
(t) = r(t) x R
o
qJC
qJC
SINGLE PULSE
R
= 0.88 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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