NVH680S75L4SPC [ONSEMI]
VE-Trac Direct - Automotive 750V, 680A Single Side Direct Cooling 6-Pack Power Module;
| 型号： | NVH680S75L4SPC |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Direct - Automotive 750V, 680A Single Side Direct Cooling 6-Pack Power Module |
| 文件： | 总13页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Automotive 750 V, 680 A
Single Side Direct Cooling
6-Pack Power Module
VE-Tract Direct Module
NVH680S75L4SPC
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Product Description
The NVH680S75L4SPC is a power module from the VE−Tract
Direct family of highly integrated power modules with industry
standard footprints for Hybrid (HEV) and Electric Vehicle (EV)
traction inverter application.
The module integrates six Field Stop 4 (FS4) 750 V Narrow Mesa
IGBTs in a 6−pack configuration, which excels in providing high
current density, while offering robust short circuit protection and
increased blocking voltage. Additionally, FS4 750 V Narrow Mesa
IGBTs show low power losses during lighter loads, which helps to
improve overall system efficiency in automotive applications.
For assembly ease and reliability, a new generation of press−fit pins
are integrated into the power module signal terminals. In addition, the
power module has an optimized pin−fin heatsink in the baseplate and
longer power terminals to easily integrate an external current sensor.
Features
• Direct Cooling w/ Integrated Pin−fin Heatsink
• Ultra−low Stray Inductance
SSDC33, 154.50x92.0 (SPC)
CASE 183AC
• T
= 175°C Continuous Operation
jmax
• Low V
and Switching Losses
CESAT
P1
P2
P3
• Automotive Grade FS4 750 V Narrow Mesa IGBT
• Fast Recovery Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
T11 T12
T21 T22
T31 T32
C1
G1
C3
G3
C5
G5
• Easy to Integrate 6−pack Topology
• This Device is Pb−Free and is RoHS Compliant
E1
C2
E3
C4
E5
C6
1
2
3
G2
E2
G4
E4
G6
E6
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power Converters
N1
N2
N3
MARKING DIAGRAM
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
December, 2020 − Rev. 0
NVH680S75L4SPC/D
VE−Tract Direct Module NVH680S75L4SPC
Pin Description
P1
P2
P3
T11
T12
T21
T22
T31
T32
C1
C3
G3
C5
G5
G1
E1
C2
E3
C4
E5
C6
1
2
2
G2
E2
G4
E4
G6
E6
N1
N2
N3
Figure 1. Pin Description
PIN FUNCTION DESCRIPTION
Pin #
P1, P2, P3
N1, N2, N3
1
Pin Function Description
Positive Power Terminals
Negative Power Terminals
Phase 1 Output
2
Phase 2 Output
3
Phase 3 Output
G1−G6
E1−E6
C1−C6
T11, T12
T21, T22
T31, T32
IGBT Gate
IGBT Gate Return
Desat Detect/Collector Sense
Phase 1 Temperature Sensor Output
Phase 2 Temperature Sensor Output
Phase 3 Temperature Sensor Output
Materials
DBC Substrate: Al O isolated substrate, basic isolation,
2
3
and copper on both sides
Terminals: Copper + Tin electro−plating
Signal Leads: Copper + Tin plating
Pin−fin Base plate: Copper + Ni plating
Flammability Information
The module frame meets UL94V−0 flammability rating.
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2
VE−Tract Direct Module NVH680S75L4SPC
MODULE CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
Unit
°C
°C
V
T
vj
Operating Junction Temperature
Storage Temperature
T
STG
Isolation Voltage (DC, 0 Hz, 1 s)
V
ISO
L
Stray Inductance
10
nH
mW
g
sCE
RCC’+EE’
Module Lead Resistance, Terminals − Chip
Module Weight
0.75
G
700
CTI
Comparative Tracking Index
>200
−
d
creep
Creepage:
Terminal to Heatsink
Terminal to Terminal
9.0
9.0
mm
d
clear
Clearance:
Terminal to Heatsink
Terminal to Terminal
4.5
4.5
mm
Symbol
Dp
Parameters
Conditions
Min
Typ
Max
Unit
mbar
bar
Pressure Drop in Cooling Circuit
10 L/min, 65°C, 50/50 EGW
−
95
−
P (Note 1)
Maximum Pressure in Cooling
Loop (relative)
T
T
< 40°C
> 40°C
−
−
−
−
2.5
2.0
Baseplate
Baseplate
1. EPDM rubber 50 durometer ‘O’ ring used.
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
IGBT
Parameter
Rating
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
CES
GES
V
680
500 (Note 2)
1360
I
Implemented Collector Current
A
CN
I
Continuous DC Collector Current, T = 175°C, T = 65°C, Ref. Heatsink
A
C nom
vj
F
I
Pulsed Collector Current @ V = 15 V, t = 1 mS
A
CRM
GE
p
800
P
tot
Total Power Dissipation T = 175°C, T = 65°C, Ref. Heatsink
W
vj
F
DIODE
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
750
680
V
A
A
RRM
I
FN
330 (Note 2)
I
F
Continuous Forward Current, T = 175°C, T = 65°C, Ref. Heatsink
vj F
1360
I
Repetitive Peak Forward Current, t = 1 mS
A
FRM
p
2
2
19000
16000
I t value
Surge Current Capability, t = 10 mS, T = 150°C
A s
p
vj
Surge Current Capability, t = 10 mS, T = 175°C
p
vj
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Verified by characterization/design, not by test.
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3
VE−Tract Direct Module NVH680S75L4SPC
CHARACTERISTICS OF IGBT (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
V
CESAT
Collector to Emitter Saturation
Voltage (Terminal)
V
V
= 15 V, I = 500 A
T
= 25°C
−
1.33
1.58
V
GE
C
vj
Collector to Emitter Saturation
Voltage (Chip)
= 15 V, I = 500 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.30
1.44
1.46
1.55
−
−
GE
C
V
GE
= 15 V, I = 680 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.45
1.67
1.71
−
−
−
C
I
Collector to Emitter Leakage
Current
V
V
= 0, V = 750 V
T
vj
T
vj
= 25°C
= 150°C
−
−
−
500
mA
CES
GE
CE
2.0
−
mA
I
Gate − Emitter Leakage
Current
= 0, V
=
20 V
−
−
300
nA
GES
CE
GE
V
Threshold Voltage
V
V
= V , I = 90 mA
4.8
−
5.7
2.0
1.7
48
6.6
−
V
th
CE
GE
C
Q
Total Gate Charge
−8 to 15 V, V = 400 V
mC
W
G
GE=
CE
R
Internal Gate Resistance
Input Capacitance
−
−
Gint
C
V
CE
V
CE
V
CE
= 30 V, V = 0 V, f = 0.1 MHz
−
−
nF
nF
nF
ns
ies
GE
C
Output Capacitance
Reverse Transfer Capacitance
= 30 V, V = 0 V, f = 0.1 MHz
−
1.5
0.2
−
oes
GE
C
= 30 V, V = 0 V, f = 0.1 MHz
−
−
res
GE
T
d.on
Turn On Delay, Inductive
Load
I
= 500 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
240
228
231
−
−
−
C
GE
CE
V
= +15/−8 V,
R
= 4.7 W
g.on
T
Rise Time, Inductive Load
I
= 500 A, V = 400 V,
T
T
T
= 25°C
−
−
−
115
134
141
−
−
−
ns
ns
ns
mJ
r
C
V
CE
vj
vj
vj
= +15/−8 V,
= 150°C
= 175°C
GE
g.on
R
= 4.7 W
T
Turn Off Delay, Inductive
Load
I
= 500 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1230
1369
1400
−
−
−
d.off
C
CE
V
= +15/−8 V,
g.off
GE
R
= 18 W
T
Fall Time, Inductive Load
I
= 500 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
144
243
266
−
−
−
f
C
CE
V
= +15/−8 V,
g.off
GE
R
= 18 W
E
ON
Turn On Switching Loss
(Including Diode Reverse
Recovery Loss)
I
= 500 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
22
33
35
−
−
−
C
CE
V
= +15/−8 V,
GE
Ls = 22 nH, R
= 4.7 W
g.on
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.8 A/nS,
= 175°C
T
vj
E
OFF
Turn Off Switching Loss
I
= 500 A, V = 400 V,
dv/dt = 2.5 V/nS,
T = 25°C
vj
−
−
−
27
41
45
−
−
−
mJ
C
CE
V
= +15/−8 V,
GE
Ls = 22 nH, R
= 18 W
g.off
dv/dt = 1.7 V/nS,
= 150°C
T
vj
dv/dt = 1.6 V/nS,
T
vj
= 175°C
E
SC
Minimum Short Circuit Energy
Withstand
V
GE
= 15 V, V = 400 V
T
vj
= 175°C
3
−
−
J
CC
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4
VE−Tract Direct Module NVH680S75L4SPC
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
vj
Symbol
V
Parameters
Conditions
Min
Typ
Max
Unit
Diode Forward Voltage
(Terminal)
I = 500 A
F
T
vj
= 25°C
−
1.60
1.85
V
F
Diode Forward Voltage (Chip)
Reverse Recovery Energy
Recovered Charge
I = 500 A
T
T
T
= 25°C
−
−
−
1.53
1.45
1.40
1.78
−
F
vj
vj
vj
= 150°C
= 175°C
−
I = 680 A
F
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.65
1.61
1.57
−
−
−
E
I = 500 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
3
8
−
−
−
mJ
mC
A
rr
F
GE
R
V
= +15/−8 V,
R
= 4.7 W
g.on
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.8 A/nS,
= 175°C
10
T
vj
Q
I = 500 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
11
32
38
−
−
−
RR
F
GE
R
V
= −8 V,
R
= 4.7 W
g.on
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.8 A/nS,
= 175°C
T
vj
I
rr
Peak Reverse Recovery
Current
I = 500 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
141
247
265
−
−
−
F
GE
R
V
= −8 V,
R
= 4.7 W
g.on
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.8 A/nS,
= 175°C
T
vj
NTC SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
(Note 3)
Parameters
Conditions
Min
−
Typ
5147
−
Max
−
Unit
W
R
Rated Resistance
T
T
T
= 25°C
25
C
C
C
DR/R
Deviation of R
= 105°C, R
= 472 W
105
5
5
%
105
P
25
Power Dissipation
B−Value
= 25°C
−
−
32
−
mW
K
B
R = R exp [B
(1/T−1/298)]
(1/T−1/298)]
−
3340
3360
3364
25/55
25/85
25
25/55
25/85
25/105
B
B−Value
R = R exp [B
−
−
K
25
B
25/105
B−Value
R = R exp [B
(1/T−1/298)]
−
−
K
25
3. Measured value at terminals.
THERMAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
0.14
0.20
Max
0.16
0.23
Unit
°C/W
°C/W
−
IGBT.R
R , Junction to Fluid, 10 L/min, 65°C, 50/50 EGW
th
th,J−F
Diode.R
R , Junction to Fluid, 10 L/min, 65°C, 50/50 EGW
th
−
th,J−F
ORDERING INFORMATION
Part Number
Package
Shipping
NVH680S75L4SPC
SSDC33, 154.50x92.0 (SPC)
4 Units / Tray
(Pb−Free)
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5
VE−Tract Direct Module NVH680S75L4SPC
TYPICAL CHARACTERISTICS
1400
1200
1000
800
1400
V
= 17 V
T
vj
= 25°C
GE
T
vj
= 150°C
V
GE
= 15 V
1200
1000
V
= 15 V
GE
T
vj
= 175°C
V
GE
= 13 V
T
vj
= 150°C
800
600
400
V
= 11 V
= 9 V
GE
600
V
GE
400
200
0
200
0
0.2
0.6
1.0
1.4
1.8
2.2
2.6
0
1
2
3
V
CE
(V)
V
CE
(V)
Figure 2. IGBT Output Characteristic
Figure 3. IGBT Output Characteristic
1400
1200
1000
800
60
50
40
V
CE
= 20 V
T
= 175°C
vj
V
R
= +15/−8 V,
GE
= 4.7 W,
Gon
V
CE
= 400 V
T
= 150°C
vj
30
20
600
T
vj
= 25°C
T
vj
= 150°C
400
10
0
200
0
T
vj
= 175°C
T
= 25°C
vj
4
6
8
10
12
100
200
300
400
(A)
500
600
700
V
(V)
I
GE
C
Figure 4. IGBT Transfer Characteristic
Figure 5. IGBT Turn−on Losses vs. IC
60
50
40
30
20
50
40
30
T
vj
= 175°C
V
= +15/−8 V,
= 500 A,
= 400 V
GE
V
R
= +15/−8 V,
= 18 W,
= 400 V
GE
I
C
T
T
= 175°C
vj
Goff
V
CE
V
CE
T
vj
= 150°C
= 150°C
= 25°C
vj
T
vj
= 25°C
T
vj
20
10
10
0
100
200
300
400
(A)
500
600
700
2
4
6
8
10
I
Rg (W)
C
Figure 6. IGBT Turn−off Losses vs. IC
Figure 7. Eon vs. Rg
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VE−Tract Direct Module NVH680S75L4SPC
TYPICAL CHARACTERISTICS
50
40
30
15
T
= 175°C
= 150°C
vj
vj
10
T
5
0
T
= 25°C
vj
T
I
V
= 25°C,
vj
20
10
= 500 A,
= 400 V
V
I
= +15/−8 V,
= 500 A,
= 400 V
−5
C
GE
CE
C
V
CE
−10
8
18
28
38
0
0.4
0.8
(mC)
1.2
1.6
Rg (W)
Q
G
Figure 8. Eoff vs. Rg
Figure 9. Gate Charge Characteristic
775
750
1600
1400
1200
1000
800
Module
Chip
725
700
600
V
R
= +15/−8 V,
400
GE
675
650
= 18 W,
G,OFF
I
I
= 1 mA, T ≤ 25°C
vj
CES
CES
200
0
T
vj
= 175°C
= 30 mA, T > 25°C
vj
−40
20
80
(°C)
140
200
0
200
400
(V)
600
800
T
vj
V
CE
Figure 10. Maximum Allowed VCE
Figure 11. Reverse Bias Safe Operating Area
100
1400
1200
C
ies
1000
800
600
400
V
= 0 V,
GE
10
f = 0.1 MHz,
= 25°C
T
vj
T
vj
= 150°C
C
oes
1
T
= 175°C
200
0
vj
C
res
T
vj
= 25°C
0.1
0
100
200
300
400
500
0.2
0.6
1.0
1.4
1.8
2.2
V
CE
(V)
V (V)
F
Figure 12. Capacitance Characteristic
Figure 13. Diode Forward Characteristic
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VE−Tract Direct Module NVH680S75L4SPC
TYPICAL CHARACTERISTICS
12
10
8
12
R
= 4.7 W,
= 400 V
T
= 175°C
= 150°C
Gon
vj
vj
V
CE
10
8
T
T
= 175°C
= 150°C
vj
T
V
= +15/−8 V,
GE
vj
6
6
I = 500 A,
F
V
CE
= 400 V
4
4
T
vj
= 25°C
T
vj
= 25°C
2
0
2
0
100
200
300
400
I (A)
500
600
700
2
4
6
8
10
R
(W)
G
F
Figure 14. Diode Switching Losses vs. IF
Figure 15. Diode Switching Losses vs. RG
1
1
10 L/Min, T = 65°C, 50/50 EGW,
10 L/Min, T = 65°C, 50/50 EGW,
f
f
Ref. Cooler Assy.
Ref. Cooler Assy.
Z
th,j−f
: Diode
Z
th,j−f
: IGBT
0.1
0.1
0.01
i:
1
2
3
4
i:
1
2
3
4
R
[K/W]: 0.0017 0.0098 0.0703 0.0550
R [K/W]: 0.0039 0.0202 0.1134 0.0581
th
th
t
th
[s]:
0.0001 0.0006 0.0423 0.5503
t
th
[s]:
0.0001 0.0006 0.0364 0.5293
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
TIME (s)
TIME (s)
Figure 16. IGBT Transient Thermal Impedance
(Typ.)
Figure 17. Diode Transient Thermal Impedance
(Typ.)
0.143
0.142
0.141
0.140
0.139
0.138
0.137
0.202
0.201
0.200
0.199
0.198
0.197
0.196
0.195
R
= f(Q ), T = 65°C, 50/50
R = f(Q ), T = 65°C, 50/50
th V f
EGW, ref. cooler assy.
th
V
f
EGW, ref. cooler assy.
0.136
0.135
0.194
0.193
6
7
8
9
10
11
12
6
7
8
9
10
11
12
Q
(L/min)
Q
(L/min)
V
V
Figure 18. IGBT, Thermal Resistance (Typ)
Figure 19. Diode, Thermal Resistance (Typ)
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8
VE−Tract Direct Module NVH680S75L4SPC
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
100,000
T = 25°C
Dp = f(Q ), 50/50 EGW,
ref. cooler assy.
f
V
T = 65°C
f
10,000
1000
100
60
40
20
5
7
9
11
(L/min)
13
15
0
25
50
75
100
125
Q
T (°C)
C
V
Figure 20. Pressure Drop In Cooling Circuit
Figure 21. NTC Thermistor − Temperature
Characteristic (Typical)
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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9
VE−Tract Direct Module NVH680S75L4SPC
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0 (SPC)
CASE 183AC
ISSUE A
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10
VE−Tract Direct Module NVH680S75L4SPC
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0 (SPC)
CASE 183AC
ISSUE A
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11
VE−Tract Direct Module NVH680S75L4SPC
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