NVH660S75L4SPFB [ONSEMI]
VE-Trac Direct - Automotive 750V, 660A Single Side Cooling 6-Pack Power Module with Flat Baseplate;
| 型号： | NVH660S75L4SPFB |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Direct - Automotive 750V, 660A Single Side Cooling 6-Pack Power Module with Flat Baseplate |
| 文件： | 总11页 (文件大小：1241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Automotive 750 V, 660 A
Single Side Direct Cooling
6-Pack Power Module
VE-Tract Direct Module
NVH660S75L4SPFB
www.onsemi.com
Product Description
The NVH660S75L4SPFB is a power module from the VE−Tract
Direct family of highly integrated power modules with industry
standard footprints for Hybrid (HEV) and Electric Vehicle (EV)
traction inverter application.
The module integrates six Field Stop 4 (FS4) 750 V Narrow Mesa
IGBTs in a 6−pack configuration, which excels in providing high
current density, while offering robust short circuit protection and
increased blocking voltage. Additionally, FS4 750 V Narrow Mesa
IGBTs show low power losses during lighter loads, which helps to
improve overall system efficiency in automotive applications.
For assembly ease and reliability, a new generation of press−fit pins
are integrated into the power module signal terminals.
Features
SSDC33, 154.50x92.0 (SPFB)
CASE 183AE
• Direct or Indirect Cooling w/ Flat Base Heatsink
• Ultra−low Stray Inductance
• T
= 175°C Continuous Operation
jmax
P1
P2
P3
T11 T12
T21 T22
T31 T32
• Low V
and Switching Losses
C1
G1
C3
G3
C5
G5
CESAT
• Automotive Grade FS4 750 V Narrow Mesa IGBT
• Fast Recovery Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
E1
C2
E3
C4
E5
C6
1
2
3
• Easy to Integrate 6−pack Topology
• This Device is Pb−Free and is RoHS Compliant
G2
E2
G4
E4
G6
E6
N1
N2
N3
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power Converters
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2021 − Rev. 3
NVH660S75L4SPFB/D
VE−Tract Direct Module NVH660S75L4SPFB
Pin Description
P1
P2
P3
T11
T12
T21
T22
T31
T32
C1
C3
G3
C5
G5
G1
E1
C2
E3
C4
E5
C6
1
2
3
G2
E2
G4
E4
G6
E6
N1
N2
N3
Figure 1. Pin Description
PIN FUNCTION DESCRIPTION
Pin #
P1, P2, P3
N1, N2, N3
1
Pin Function Description
Positive Power Terminals
Negative Power Terminals
Phase 1 Output
2
Phase 2 Output
3
Phase 3 Output
G1−G6
E1−E6
C1−C6
T11, T12
T21, T22
T31, T32
IGBT Gate
IGBT Gate Return
Desat Detect/Collector Sense
Phase 1 Temperature Sensor Output
Phase 2 Temperature Sensor Output
Phase 3 Temperature Sensor Output
Materials
DBC Substrate: Al O isolated substrate, basic isolation,
2
3
and copper on both sides
Terminals: Copper + Tin electro−plating
Signal Leads: Copper + Tin plating
Flat Base plate: Copper + Ni plating
Flammability Information
The module frame meets UL94V−0 flammability rating.
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2
VE−Tract Direct Module NVH660S75L4SPFB
MODULE CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
Unit
°C
°C
V
T
vj
Operating Junction Temperature
Storage Temperature
T
STG
Isolation Voltage (DC, 0 Hz, 1 s)
V
ISO
L
Stray Inductance
8
nH
mW
g
sCE
RCC’+EE’
Module Lead Resistance, Terminals − Chip
Module Weight
0.75
G
580
CTI
Comparative Tracking Index
Creepage:
>200
−
d
creep
Terminal to Heatsink
Terminal to Terminal
9.0
9.0
mm
d
clear
Clearance:
Terminal to Heatsink
Terminal to Terminal
4.5
4.5
mm
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
IGBT
Parameter
Rating
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
I
Implemented Collector Current
660
A
CN
I
Continuous DC Collector Current, T = 175°C, T = 65°C, Ref. Heatsink
450 (Note 1)
1320
A
C nom
vj
F
I
Pulsed Collector Current @ V = 15 V, t = 1 ms
A
CRM
GE
p
P
tot
Total Power Dissipation T = 175°C, T = 65°C, Ref. Heatsink
733
W
vj
F
DIODE
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
750
660
V
A
A
A
RRM
I
FN
I
F
Continuous Forward Current, T = 175°C, T = 65°C, Ref. Heatsink
300 (Note 1)
1320
vj
F
I
Repetitive Peak Forward Current, t = 1 ms
FRM
p
2
2
I t value
Surge Current Capability, t = 10 ms,
T
vj
T
vj
= 150°C
= 175°C
19000
16000
A s
p
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Verified by characterization/design, not by test.
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VE−Tract Direct Module NVH660S75L4SPFB
CHARACTERISTICS OF IGBT (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
Collector to Emitter Saturation
Voltage (Terminal)
V
V
= 15 V, I = 450 A
T
= 25°C
1.19
1.44
V
V
CESAT
GE
C
vj
−
Collector to Emitter Saturation
Voltage (Chip)
= 15 V, I = 450 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.16
1.20
1.21
1.41
−
−
GE
C
V
GE
= 15 V, I = 660 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.29
1.40
1.43
−
−
−
C
I
Collector to Emitter Leakage
Current
V
V
= 0, V = 750 V
T
vj
T
vj
= 25°C
= 150°C
−
−
−
2.0
500
−
mA
mA
CES
GE
CE
Gate – Emitter Leakage
Current
= 0, V
=
20 V
−
−
300
nA
I
CE
GE
GES
Threshold Voltage
Total Gate Charge
Internal Gate Resistance
Input Capacitance
Output Capacitance
V
V
= V , I = 90 mA
4.8
−
5.7
1.9
1.7
63
6.6
−
V
V
CE
GE
C
th
= −8 to 15 V, V = 400 V
mC
W
Q
GE
CE
G
−
−
R
Gint
V
CE
V
CE
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
nF
nF
nF
C
GE
ies
= 30 V, V = 0 V, f = 1 MHz
−
1.8
0.2
−
C
GE
oes
Reverse Transfer
Capacitance
= 30 V, V = 0 V, f = 1 MHz
−
−
C
GE
res
Turn On Delay, Inductive
Load
I
V
= 450 A, V = 400 V,
T
T
T
= 25°C
−
−
−
308
304
294
−
−
−
ns
ns
ns
ns
mJ
T
C
CE
vj
vj
vj
d.on
= +15/−8 V,
= 150°C
= 175°C
GE
Rg.on = 4 W
Rise Time, Inductive Load
I
C
= 450 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
114
133
124
−
−
−
T
r
CE
V
= +15/−8 V,
GE
Rg.on = 4 W
Turn Off Delay, Inductive
Load
I
C
= 450 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1432
1579
1536
−
−
−
T
CE
d.off
V
= +15/−8 V,
GE
Rg.off = 12 W
Fall Time, Inductive Load
I
C
= 450 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
169
256
246
−
−
−
T
f
CE
V
= +15/−8 V,
GE
Rg.off = 12 W
E
Turn−On Switching Loss
(Including Diode Reverse
Recovery Loss)
I
C
= 450 A, V = 400 V,
di/dt = 3.2 A/nS,
T = 25°C
vj
−
−
−
16
25
27
−
−
−
ON
CE
V
= +15/−8 V,
GE
Ls = 22 nH, Rg.on = 4 W
di/dt = 2.7 A/nS,
= 150°C
T
vj
di/dt = 2.9 A/nS,
= 175°C
T
vj
E
OFF
Turn−Off Switching Loss
I
V
= 450 A, V = 400 V,
dv/dt = 2.3 V/nS,
T = 25°C
vj
−
−
−
22
33
35
−
−
−
mJ
C
CE
= +15/−8 V,
GE
Ls = 22 nH, Rg.off = 12 W
dv/dt = 1.6 V/nS,
= 150°C
T
vj
dv/dt = 1.5 V/nS,
T
vj
= 175°C
Minimum Short Circuit Energy
Withstand
V
GE
= 15 V, V = 400 V
T
vj
T
vj
= 25°C
= 175°C
8
4
−
−
−
−
J
E
SC
CC
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VE−Tract Direct Module NVH660S75L4SPFB
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
V
F
Diode Forward Voltage
(Terminal)
I = 450 A
F
T
vj
= 25°C
−
1.51
1.76
V
Diode Forward Voltage (Chip)
I = 450 A
F
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.45
1.33
1.30
1.70
−
−
I = 660 A
F
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.58
1.52
1.50
−
−
−
Reverse Recovery Energy
I = 450 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
2
7
9
−
−
−
mJ
mC
A
E
F
F
rr
V
GE
= +15/−8 V,
Rg.on = 4 W
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.9 A/nS,
= 175°C
T
vj
Recovered Charge
I = 450 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
7
−
−
−
Q
F
F
rr
V
GE
= −8 V,
Rg.on = 4 W
di/dt = 3.0 A/nS,
= 150°C
26
33
T
vj
di/dt = 2.9 A/nS,
= 175°C
T
vj
Peak Reverse Recovery
Current
I = 450 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
120
227
264
−
−
−
I
rr
F
F
V
GE
= −8 V,
Rg.on = 4 W
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.9 A/nS,
= 175°C
T
vj
NTC SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
R
Rated Resistance
T
C
= 25°C
−
5147
−
W
25
(Note 3)
DR/R
Deviation of R105
Power Dissipation
B−Value
T
T
= 105°C, R
= 472 W
105
5
−
−
−
−
−
5
32
−
%
mW
K
C
P
25
= 25°C
−
C
B
25/55
B
25/85
R = R exp [B
(1/T−1/298)]
(1/T−1/298)]
3340
3360
3364
25
25/55
25/85
25/105
B−Value
R = R exp [B
−
K
25
B
25/105
B−Value
R = R exp [B
(1/T−1/298)]
−
K
25
2. Measured value at terminals.
THERMAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
−
IGBT.R
IGBT.R
Rth, Junction to Case
0.074
0.085
°C/W
th,J−C
−
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW, Ref. Coolinig Jacket
Rth, Junction to Case
0.15
0.13
0.23
°C/W
°C/W
°C/W
th,J−F
Diode.R
Diode.R
−
−
0.15
th,J−C
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW, Ref. Coolinig Jacket
th,J−F
ORDERING INFORMATION
Part Number
Package
Shipping
NVH660S75L4SPFB
SSDC33, 154.50x92.0 (SPFB)
(Pb−Free)
4 Units / Tray
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5
VE−Tract Direct Module NVH660S75L4SPFB
TYPICAL CHARACTERISTICS
1400
1400
1200
1000
800
V
= 17 V
T
= 25°C
V
GE
= 15 V
T = 150°C
GE
vj
J
1200
1000
800
V
= 15 V
GE
T
vj
= 150°C
V
GE
= 11 V
V
GE
= 13 V
T
vj
= 175°C
V
GE
= 9 V
600
600
400
400
200
0
200
0
0.2
0.6
1.0
1.4
1.8
2.2
0
1
2
3
V
CE
(V)
V
CE
(V)
Figure 2. IGBT Output Characteristic
Figure 3. IGBT Output Characteristic
1400
1200
1000
800
60
50
40
30
V
CE
= 20 V
V
R
= +15/−8 V,
GE
= 4 W,
Gon
T
vj
= 175°C
V
CE
= 400 V
600
T
vj
= 150°C
T
vj
= 25°C
20
400
10
0
200
0
T
vj
= 150°C
T
= 175°C
vj
T
= 25°C
vj
4
5
6
7
8
9
10
11
100
200
300
400
(A)
500
600
700
V
(V)
I
GE
C
Figure 4. IGBT Transfer Characteristic
Figure 5. IGBT Turn−on Losses vs. IC
60
50
40
30
20
40
35
30
25
20
T
vj
= 175°C
V
R
= +15/−8 V,
V
= +15/−8 V,
T
= 175°C
GE
GE
vj
= 12 W,
I = 450 A,
C
Goff
V
CE
= 400 V
V
CE
= 400 V
T
vj
= 150°C
T
= 25°C
vj
T
vj
= 25°C
15
10
10
0
T
= 150°C
vj
100
200
300
400
(A)
500
600
700
2
4
6
8
10
I
C
R
(W)
G
Figure 6. IGBT Turn−off Losses vs. IC
Figure 7. EON vs. RG
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VE−Tract Direct Module NVH660S75L4SPFB
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
T
T
= 175°C
= 150°C
vj
Q
G
10
5
vj
T
= 25°C
vj
0
V
I
= 400 V,
= 450 A,
= 25°C
CE
V
I
= +15/−8 V,
= 450 A,
= 400 V
GE
−5
C
15
10
T
vj
C
V
CE
−10
12
14
16
(W)
18
20
0
0.4
0.8
1.2
(mC)
1.6
2.0
2.4
R
Q
G
G
Figure 8. EOFF vs. RG
Figure 9. Gate Charge Characteristic
1400
1200
1000
800
775
750
725
700
Chip
Module
600
400
V
= +15/−8 V,
GE
675
650
R
T
= 12 W,
200
0
Goff
I
I
= 1 mA, T ≤ 25°C,
CES
CES
vj
= 175°C
vj
= 30 mA, T > 25°C
vj
−40
20
80
(°C)
140
200
0
200
400
(V)
600
800
T
vj
V
CE
Figure 10. Maximum Allowed VCE
Figure 11. Reverse Bias Safe Operating Area
1400
1200
1000
800
100
10
C
ies
V
= 0 V,
GE
T = 25°C
J
f = 1 MHz
600
T
vj
= 150°C
C
oes
1
400
200
0
C
T
vj
= 175°C
res
T
vj
= 25°C
0.1
0
100
200
300
400
500
0.2
0.6
1.0
1.4
1.8
2.2
V
CE
(V)
V (F)
F
Figure 12. Capacitance Characteristic
Figure 13. Diode Forward Characteristic
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VE−Tract Direct Module NVH660S75L4SPFB
TYPICAL CHARACTERISTICS
12
10
8
10
T
vj
= 175°C
R
V
= 4 W,
= 400 V
Gon
CE
8
6
4
T
T
= 175°C
= 150°C
= 25°C
vj
T
vj
= 150°C
= 25°C
6
vj
R
= 8 W
= 400 V
Gon
V
CE
4
T
vj
T
vj
2
0
2
0
100
200
300
400
I (A)
500
600
700
2
4
6
8
10
R
(W)
G
F
Figure 14. Diode Switching Losses vs. IF
Figure 15. Diode Switching Losses vs. RG
1
1
10 L/Min, T = 65°C, 50/50 EGW,
f
10 L/Min, T = 65°C, 50/50 EGW,
f
Ref. Cooler Assy.
Ref. Cooler Assy.
Z
th,j−c
: IGBT
Z
th,j−c
: Diode
0.1
0.1
0.01
i:
1
2
3
4
i:
1
2
3
4
R
[K/W]: 0.044 0.046 0.009 0.009
R
[K/W]: 0.034 0.075 0.031 0.043
th
th
t
th
[s]:
0.046 0.388 0.001 1.273
t
th
[s]:
0.012 0.064 0.0008 0.639
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
TIME (s)
TIME (s)
Figure 16. IGBT Transient Thermal Impedance
(Typ.)
Figure 17. Diode Transient Thermal Impedance
(Typ.)
100K
10K
1K
100
0
25
50
75
100
125
T
C
(°C)
Figure 18. NTC Thermistor − Temperature
Characteristic (Typical)
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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8
VE−Tract Direct Module NVH660S75L4SPFB
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0
CASE 183AE
ISSUE O
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9
VE−Tract Direct Module NVH660S75L4SPFB
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0
CASE 183AE
ISSUE O
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10
VE−Tract Direct Module NVH660S75L4SPFB
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For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
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