NVH4L160N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L;
| 型号： | NVH4L160N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 160 mohm,
1200ꢀV, M1, TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
224 mW @ 20 V
17.3 A
D
NVH4L160N120SC1
Features
• Typ. R
• Ultra Low Gate Charge (Q
G
= 160 mW
DS(on)
S1: Kelvin Source
S2: Power Source
= 34 nC)
G(tot)
• High Speed Switching with Low Capacitance (C = 49.5 pF)
oss
S1 S2
• 100% Avalanche Tested
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
D
S2
S1
G
TO247−4L
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
MARKING DIAGRAM
V
DSS
1200
−15/+25
−5/+20
V
V
V
Gate−to−Source Voltage
V
GS
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Note 2)
Steady
State
T
I
D
17.3
111
A
W
A
AYWWZZ
NVH4L160
N120SC1
C
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Notes 1, 2)
Steady
State
T
C
= 100°C
I
D
12.3
55.5
69
Power Dissipation
(Notes 1, 2)
P
D
W
A
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Lot Traceability
Pulsed Drain Current
(Note 3)
T = 25°C
I
DM
A
NVH4L160N120SC1 = Specific Device Code
Single Pulse Surge
Drain Current Capability
T = 25°C, t = 10 ms,
I
140
A
A
p
DSC
R
= 4.7 W
G
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Device
Package
Shipping
Source Current (Body Diode)
I
S
11
A
NVH4L160N120SC1
TO247−4L
30 Units /
Tube
Single Pulse Drain−to−Source Avalanche
E
AS
128
mJ
Energy (I
= 16 A, L = 5 mH) (Note 4)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. JA is constant value to follow guide table of LV/HV discrete final datasheet
generation .
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. EAS of 128 mJ is based on starting T = 25°C; L = 5 mH, I = 16 A,
J
AS
V
DD
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 4
NVH4L160N120SC1/D
NVH4L160N120SC1
Table 1. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
Symbol
Max
1.35
40
Unit
°C/W
R
q
JC
R
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.6
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
100
1
mA
mA
mA
DSS
GS
DS
J
= 1200 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
V
= +25/−15 V, V = 0 V
1
GSS
GS
DS
V
R
= V , I = 2.5 mA
1.8
−5
−
3.1
−
4.3
+20
224
377
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 12 A, T = 25°C
160
271
3.2
mW
DS(on)
D
J
= 20 V, I = 12 A, T = 175°C
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 12 A
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
665
49.5
4.3
34
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/20 V, V = 600 V,
nC
G(TOT)
GS
DS
I
= 16 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
6
G(TH)
Q
12.5
9.6
1.4
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS, VGS = 10 V
Turn−On Delay Time
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
11
10
20
20
25
14
−
ns
d(ON)
GS
DS
I
= 16 A, R = 6 W
G
Rise Time
t
r
Inductive load
Turn−Off Delay Time
t
14
d(OFF)
Fall Time
t
f
7
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
104
32
mJ
E
−
OFF
E
tot
136
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
V
= −5 V, T = 25°C
−
−
−
−
−
4
11
69
−
A
V
SD
GS
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
SDM
Forward Diode Voltage
V
= −5 V, I = 6 A, T = 25°C
SD J
SD
GS
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2
NVH4L160N120SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/20 V, I = 16 A,
−
−
−
−
−
−
15
47
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
S
SD
dI /dt = 1000 A/ms
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
3.9
6.6
7.0
7.4
I
RRM
Ta
ns
ns
Discharge Time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVH4L160N120SC1
TYPICAL CHARACTERISTICS
50
40
30
20
4.0
V
= 10 V
GS
V
= 12 V
GS
3.5
3.0
2.5
V
= 19 V
V
= 20 V
GS
GS
V
= 15 V
GS
V
= 18 V
V
GS
= 16 V
GS
V
= 17 V
GS
V
= 17 V
GS
V
GS
= 16 V
2.0
1.5
1.0
0.5
V
GS
= 15 V
= 10 V
V
= 18 V
GS
V
= 12 V
GS
10
0
V
= 20 V
GS
V
GS
V
GS
= 19 V
0
2
4
6
8
10
0
10
20
I , DRAIN CURRENT (A)
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
700
600
500
400
300
200
100
0
1.9
1.7
1.5
1.3
1.1
I
V
= 12 A
D
I
= 12 A
D
= 20 V
GS
T = 150°C
J
T = 25°C
J
0.9
0.7
−75 −50 −25
0
25 50 75 100 125 150 175
9
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
25
20
15
10
100
30
V
DS
= 20 V
V
GS
= −5 V
T = 175°C
J
T = 25°C
J
T = −55°C
J
T = 175°C
J
T = 25°C
J
5
0
T = −55°C
J
3
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVH4L160N120SC1
TYPICAL CHARACTERISTICS (continued)
20
15
10
5
10000
I
D
= 16 A
V
= 600 V
DD
C
iss
V
DD
= 400 V
1000
100
10
V
DD
= 800 V
C
oss
C
rss
0
f = 1 MHz
V
= 0 V
GS
−5
1
0
10
20
Q , GATE CHARGE (nC)
30
40
0
1
10
100
800
175
0.1
V
, DRAIN−TO−SOURCE VOLTAGE (V)
g
DS
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
20
16
12
8
100
V
GS
= 20 V
10
T = 25°C
J
T = 150°C
J
4
R
= 1.35°C/W
q
JC
1
0.001
0
5
25
50
75
100
125
150
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100000
10000
1000
100
100
Single Pulse
R
= 1.35°C/W
q
JC
T
C
= 25°C
10 ms
10
1
100 ms
1 ms
10 ms
100 ms
SINGLE PULSE
T = MAX RATED
0.1
J
R
= 1.35°C/W
= 25°C
CURVE BENT TO
MEASURED DATA
q
JC
T
C
0.01
10
0.1
1
10
100
1000
2000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVH4L160N120SC1
TYPICAL CHARACTERISTICS (continued)
2
1
DUTY CYCLE DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Notes:
(t) = r(t) x R
P
DM
Z
q
q
JC
JC
0.01
R
= 1.35°C/W
q
JC
Single Pulse
Peak T = P
x Z
(t) + T
JC C
q
J
DM
t
1
Duty Cycle, D = t / t
1
2
t
2
0.001
0.00001
0.0001
0.001
t, RECTANGULAR PULSE DURATIONTIME (s)
0.01
0.1
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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