NVH640S75L4SPB [ONSEMI]
VE-Trac Direct - Automotive 750V, 640A Single Side Direct Cooling 6-Pack Power Module;
| 型号： | NVH640S75L4SPB |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Direct - Automotive 750V, 640A Single Side Direct Cooling 6-Pack Power Module |
| 文件： | 总12页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive 750 V, 640 A
Single Side Direct Cooling
6-Pack Power Module
VE-Tract Direct Module
NVH640S75L4SPB
SSDC33, 154.50x92.0 (SPB)
CASE 183AB
Product Description
The NVH640S75L4SPB is a power module from the VE−Tract
Direct family of highly integrated power modules with industry
standard footprints for Hybrid (HEV) and Electric Vehicle (EV)
traction inverter application.
The module integrates four Field Stop 4 (FS4) 750 V Narrow Mesa
IGBTs in a 6−pack configuration, which excels in providing high
current density, while offering robust short circuit protection and
increased blocking voltage. Additionally, FS4 750 V Narrow Mesa
IGBTs show low power losses during lighter loads, which helps to
improve overall system efficiency in automotive applications.
For assembly ease and reliability, a new generation of press−fit pins
are integrated into the power module signal terminals. In addition, the
power module has an optimized pin−fin heatsink in the baseplate.
MARKING DIAGRAM
XXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
AT
P1
P2
P3
T11 T12
T21 T22
T31 T32
C1
G1
C3
G3
C5
G5
Features
• Direct Cooling w/ Integrated Pin−fin Heatsink
• Ultra−low Stray Inductance
E1
C2
E3
C4
E5
C6
1
2
3
G2
E2
G4
E4
G6
E6
• T
= 175°C Continuous Operation
vjmax
• Low V
and Switching Losses
CESAT
N1
N2
N3
• Automotive Grade FS4 750 V Narrow Mesa IGBT
• Fast Recovery Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
• Easy to Integrate 6−pack Topology
• This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power Converters
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2021 − Rev. 3
NVH640S75L4SPB/D
VE−Tract Direct Module NVH640S75L4SPB
Pin Description
P1
P2
P3
T11
T12
T21
T22
T31
T32
C1
C3
G3
C5
G5
G1
E1
C2
E3
C4
E5
C6
1
2
3
G2
E2
G4
E4
G6
E6
N1
N2
N3
Figure 1. Pin Description
PIN FUNCTION DESCRIPTION
Pin #
P1, P2, P3
N1, N2, N3
1
Pin Function Description
Positive Power Terminals
Negative Power Terminals
Phase 1 Output
2
Phase 2 Output
3
Phase 3 Output
G1−G6
E1−E6
C1−C6
T11, T12
T21, T22
T31, T32
IGBT Gate
IGBT Gate Return
Desat Detect/Collector Sense
Phase 1 Temperature Sensor Output
Phase 2 Temperature Sensor Output
Phase 3 Temperature Sensor Output
Materials
DBC Substrate: Al O isolated substrate, basic isolation,
2
3
and copper on both sides
Terminals: Copper + Tin electro−plating
Signal Leads: Copper + Tin plating
Pin−fin Base plate: Copper + Ni plating
Flammability Information
The module frame meets UL94V−0 flammability rating.
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2
VE−Tract Direct Module NVH640S75L4SPB
MODULE CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
Unit
°C
°C
V
T
vj
Operating Junction Temperature
Storage Temperature
T
STG
Isolation Voltage (DC, 0 Hz, 1 s)
V
ISO
L
Stray Inductance
8
nH
mW
g
sCE
RCC’+EE’
Module Lead Resistance, Terminals − Chip
Module Weight
0.8
G
700
CTI
Comparative Tracking Index
>200
−
d
creep
Creepage:
Terminal to Heatsink
Terminal to Terminal
9.0
9.0
mm
d
clear
Clearance:
Terminal to Heatsink
Terminal to Terminal
4.5
4.5
mm
Symbol
Dp
Parameters
Conditions
Min
Typ
Max
Unit
mbar
bar
Pressure Drop in Cooling Circuit
10 L/min, 65°C, 50/50 EGW
−
95
−
P (Note 1)
Maximum Pressure in Cooling
Loop (relative)
T
T
< 40°C
> 40°C
−
−
−
−
2.5
2.0
Baseplate
Baseplate
1. EPDM rubber 50 durometer ‘O’ ring used.
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
IGBT
Parameter
Rating
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
CES
GES
V
640
450 (Note 2)
1280
I
Implemented Collector Current
A
CN
I
Continuous DC Collector Current, T = 175°C, T = 65°C, Ref. Heatsink
A
C nom
vj
F
I
Pulsed Collector Current @ V = 15 V, t =1 mS
A
CRM
GE
p
680
P
tot
Total Power Dissipation T = 175°C, T = 65°C, Ref. Heatsink
W
vj
F
Diode
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
750
640
V
A
A
RRM
I
FN
250 (Note 2)
I
F
Continuous Forward Current, T = 175°C, T = 65°C, Ref. Heatsink
vj F
1280
I
Repetitive Peak Forward Current, t = 1 ms
A
FRM
p
2
2
11200
8200
I t value
Surge Current Capability, t = 10 ms,
T
vj
T
vj
= 150°C
= 175°C
A s
p
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Verified by characterization/design, not by test.
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3
VE−Tract Direct Module NVH640S75L4SPB
CHARACTERISTICS OF IGBT (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
Collector to Emitter Saturation
Voltage (Terminal)
V
V
= 15 V, I = 450 A
T
= 25°C
1.35
1.64
V
V
CESAT
GE
C
vj
−
Collector to Emitter Saturation
Voltage (Chip)
= 15 V, I = 450 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.27
1.39
1.45
1.56
−
−
GE
C
V
GE
= 15 V, I = 640 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.46
1.68
1.76
−
−
−
C
I
I
Collector to Emitter Leakage
Current
V
V
= 0, V = 750 V
T
vj
T
vj
= 25°C
= 150°C
−
−
−
500
mA
CES
GE
CE
2.0
−
mA
Gate – Emitter Leakage
Current
= 0, V
=
20 V
−
−
300
nA
CE
GE
GES
Threshold Voltage
Total Gate Charge
Internal Gate Resistance
Input Capacitance
Output Capacitance
V
V
= V , I = 60 mA
4.8
−
5.5
1.8
2.5
47
6.6
−
V
V
CE
GE
C
th
−8 to 15 V, V = 400 V
mC
W
Q
GE=
CE
G
−
−
R
Gint
V
CE
V
CE
V
CE
= 30 V, V = 0 V, f = 100 kHz
−
−
nF
nF
nF
C
GE
ies
= 30 V, V = 0 V, f = 100 kHz
−
1.3
0.08
−
C
GE
oes
Reverse Transfer
Capacitance
= 30 V, V = 0 V, f = 100 kHz
−
−
C
GE
res
Turn On Delay, Inductive
Load
I
= 450 A, V = 400 V,
GE
T
T
T
= 25°C
−
−
−
231
241
240
−
−
−
ns
ns
ns
ns
mJ
T
C
V
CE
vj
vj
vj
d.on
= +15/−8 V,
= 150°C
= 175°C
Rg.on = 2.8 W
Rise Time, Inductive Load
I
= 450 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
128
133
134
−
−
−
T
r
C
CE
V
= +15/−8 V,
GE
Rg.on = 2.8 W
Turn Off Delay, Inductive
Load
I
= 450 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
816
915
933
−
−
−
T
C
CE
d.off
V
= +15/−8 V,
GE
Rg.off = 18 W
Fall Time, Inductive Load
I
= 450 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
140
194
207
−
−
−
T
f
C
CE
V
= +15/−8 V,
GE
Rg.off = 18 W
E
Turn−On Switching Loss
(Including Diode Reverse
Recovery Loss)
I
= 450 A, V = 400 V,
di/dt = 2.8 A/ns,
T = 25°C
vj
−
−
−
21
27
29
−
−
−
ON
C
CE
V
= +15/−8 V,
GE
Ls = 22 nH, Rg.on = 2.8 W
di/dt = 2.7 A/ns,
= 150°C
T
vj
di/dt = 2.6 A/ns,
= 175°C
T
vj
E
OFF
Turn−Off Switching Loss
I
= 450 A, V = 400 V,
GE
dv/dt = 1.6 V/ns,
T = 25°C
vj
−
−
−
20
27
29
−
−
−
mJ
C
V
CE
= +15/−8 V,
Ls = 22 nH, Rg.off = 18 W
dv/dt = 1.3 V/ns,
= 150°C
T
vj
dv/dt = 1.3 V/ns,
T
vj
= 175°C
Minimum Short Circuit Energy
Withstand
V
GE
= 15 V, V = 400 V
T
vj
T
vj
= 25°C
= 175°C
5
3
−
−
J
E
SC
CC
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VE−Tract Direct Module NVH640S75L4SPB
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
vj
Symbol
V
Parameters
Conditions
Min
Typ
Max
Unit
Diode Forward Voltage
(Terminal)
I = 450 A
F
T
vj
= 25°C
−
1.70
2.02
V
F
Diode Forward Voltage (Chip)
Reverse Recovery Energy
Recovered Charge
I = 450 A
T
T
T
= 25°C
−
−
−
1.59
1.54
1.51
1.91
−
F
vj
vj
vj
= 150°C
= 175°C
−
I = 640 A
F
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.79
1.80
1.81
−
−
−
I = 450 A, V = 400 V,
di/dt = 2.8 A/ns,
T = 25°C
vj
−
−
−
2.3
6.1
7.3
−
−
−
mJ
mC
A
E
F
GE
Rg.on = 2.8 W
R
rr
V
= −8 V,
di/dt = 2.7 A/ns,
= 150°C
T
vj
di/dt = 2.6 A/ns,
= 175°C
T
vj
I = 450 A, V = 400 V,
di/dt = 2.8 A/ns,
T = 25°C
vj
−
−
−
9.6
−
−
−
Q
F
GE
Rg.on = 2.8 W
R
RR
V
= +15/−8 V,
di/dt = 2.7 A/ns,
= 150°C
23.6
27.6
T
vj
di/dt = 2.6 A/ns,
= 175°C
T
vj
Peak Reverse Recovery
Current
I = 450 A, V = 400 V,
di/dt = 2.8 A/ns,
T = 25°C
vj
−
−
−
115
185
197
−
−
−
Irr
F
GE
Rg.on = 2.8 W
R
V
= −8 V,
di/dt = 2.7 A/ns,
= 150°C
T
vj
di/dt = 2.6 A/ns,
= 175°C
T
vj
NTC SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
R
Rated Resistance
T
C
= 25°C
−
5
−
W
25
(Note 3)
DR/R
Deviation of R100
Power Dissipation
B−Value
T
T
= 100°C, R
= 493 W
100
5
−
−
−
−
−
5
20
−
%
mW
K
C
P
25
= 25°C
−
C
B
R = R exp [B
(1/T−1/298)]
(1/T−1/298)]
3375
3411
3433
25/50
25/80
25
25/50
25/80
25/100
B
B−Value
R = R exp [B
−
K
25
B
25/100
B−Value
R = R exp [B
(1/T−1/298)]
−
K
25
THERMAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
0.16
0.28
Max
0.19
0.33
Unit
°C/W
°C/W
−
IGBT.R
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW
th,J−F
Diode.R
−
th,J−F
ORDERING INFORMATION
Part Number
Package
Shipping
NVH640S75L4SPB
SSDC33, 154.50x92.0 (SPB)
4 Units / Tray
(Pb−Free)
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5
VE−Tract Direct Module NVH640S75L4SPB
TYPICAL CHARACTERISTICS
1200
1000
800
600
400
200
0
1200
V
GE
= 15 V
T = 150°C
vj
T
= 25°C
V
= 17 V
vj
GE
1000
800
600
400
200
0
V
= 15 V
GE
T
vj
= 150°C
V
= 13 V
GE
V
= 11 V
GE
T
vj
= 175°C
V
= 9 V
GE
0.0
0.4
0.8
1.2
(V)
1.6
2.0
2.4
0
1
2
3
V
CE
V
CE
(V)
Figure 2. IGBT Output Characteristic
Figure 3. IGBT Output Characteristic
1200
1000
800
600
400
200
0
60
50
40
30
20
10
0
V
= 20 V
CE
V
R
= +15/−8 V,
GE
= 18 W,
Goff
V
CE
= 400 V
T
= 175°C
vj
T
= 150°C
vj
T
= 150°C
vj
T
vj
= 25°C
T
vj
= 175°C
T
= 25°C
vj
4
5
6
7
8
9
10
11
12
100
200
300
400
(A)
500
600
V
GE
(V)
I
C
Figure 4. IGBT Transfer Characteristic
Figure 5. IGBT Turn−off Losses vs. IC
50
60
50
40
30
20
10
0
V
R
= +15/−8 V,
GE
T
vj
= 175°C
45
40
35
30
25
20
15
10
5
= 2.8 W,
Gon
T
vj
= 150°C
V
CE
= 400 V
T
= 175°C
vj
T
vj
= 150°C
T
vj
= 25°C
T
= 25°C
vj
V
GE
= +15/−8 V,
I
C
= 450 A,
V
CE
= 400 V
0
1
2
3
4
5
6
7
8
9
10
100
200
300
400
500
600
I
C
(A)
R
(W)
G
Figure 6. IGBT Turn−on Losses vs. IC
Figure 7. EON vs. RG
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VE−Tract Direct Module NVH640S75L4SPB
TYPICAL CHARACTERISTICS
15
40
35
30
25
20
15
10
5
10
5
T
= 175°C
= 150°C
vj
T
vj
T
vj
= 25°C
0
V
CE
= 400 V,
−5
V
I
= +15/−8 V,
= 450 A,
= 400 V
GE
I
C
= 450 A,
C
T
vj
= 25°C
V
CE
−10
0
0.0
0.2
0.4
0.6
(mC)
0.8
1.0
1.2
10
14
18
22
26
30
R
(W)
Q
G
G
Figure 8. EOFF vs. RG
Figure 9. Gate Charge Characteristic
775
750
725
700
675
650
1400
1200
1000
800
600
400
200
0
Chip
Module
V
R
= +15/−8 V,
GE
= 18 W,
Goff
I
I
= 1 mA, T ≤ 25°C,
vj
CES
CES
T
vj
= 175°C
= 30 mA, T > 25°C
vj
−40
20
80
140
200
0
200
400
(V)
600
800
T
vj
(5C)
V
CE
Figure 10. Maximum Allowed VCE
Figure 11. Reverse Bias Safe Operating Area
100
1200
1000
800
600
400
200
0
C
RES
V
= 0 V,
= 25°C
GE
10
1
T
vj
f = 100 kHz
C
OES
T
vj
= 150°C
0.1
0.01
C
IES
T
vj
= 175°C
T
vj
= 25°C
0
100
200
300
400
500
0.0
0.4
0.8
1.2
V (F)
1.6
2.0
2.4
V
CE
(V)
F
Figure 12. Capacitance Characteristic
Figure 13. Diode Forward Characteristic
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VE−Tract Direct Module NVH640S75L4SPB
TYPICAL CHARACTERISTICS
10
T
T
= 175°C
vj
I = 450 A,
R
V
= 2.8 W
= 400 V
F
Gon
8
6
4
2
0
V
R
= 400 V
R
8
6
4
2
0
T
= 175°C
vj
= 150°C
= 25°C
vj
T
vj
= 150°C
T
vj
T
= 25°C
vj
1
2
3
4
5
6
7
8
9
10
100
200
300
400
I (A)
500
600
R
(W)
G
F
Figure 14. Diode Switching Losses vs. RG
Figure 15. Diode Switching Losses vs. IF
1
1
10 L/Min, T = 65°C, 50/50 EGW,
f
10 L/Min, T = 65°C, 50/50 EGW,
f
Ref. Cooler Assy.
Ref. Cooler Assy.
Z
th,j−f
: IGBT
Z
th,j−f
: Diode
0.1
0.01
0.1
i:
R
1
2
3
4
i:
R
1
2
3
4
[K/W]: 0.009 0.026 0.082 0.050
[K/W]: 0.023 0.047 0.151 0.066
th
[s]:
th
[s]:
t
th
0.0003 0.015 0.087 0.681
t
th
0.0002 0.008 0.057 0.540
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
TIME (s)
TIME (s)
Figure 16. IGBT Transient Thermal Impedance
(Typ.)
Figure 17. Diode Transient Thermal Impedance
(Typ.)
0.330
0.320
0.310
0.300
0.290
0.280
0.270
0.260
0.210
0.200
0.190
0.180
0.170
0.160
0.150
0.140
R
= f(Q ), T = 65°C, 50/50 EGW,
V f
R
= f(Q ), T = 65°C, 50/50 EGW,
V f
th
th
Ref. Cooler Assy.
Ref. Cooler Assy.
4
6
8
(L/min)
10
12
4
6
8
(L/min)
10
12
Q
Q
V
V
Figure 18. IGBT, Thermal Resistance (Typ.)
Figure 19. Diode, Thermal Resistance (Typ.)
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VE−Tract Direct Module NVH640S75L4SPB
TYPICAL CHARACTERISTICS
100000
200
180
T = 25°C
f
Dp = f(Q ), 50/50 EGW,
Ref. Cooler Assy.
V
160
140
120
T = 65°C
10000
1000
100
f
100
80
60
40
20
5
7
9
11
(L/min)
13
15
0
25
50
75
100
125
T
C
(5C)
Q
V
Figure 20. Pressure Drop in Cooling Circuit
Figure 21. NTC Thermistor − Temperature
Characteristic (Typical)
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0 (SPB)
CASE 183AB
ISSUE A
DATE 05 DEC 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10436H
SSDC33, 154.50x92.0 (SPB)
PAGE 1 OF 2
ON Semiconductor and
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0 (SPB)
CASE 183AB
ISSUE A
DATE 05 DEC 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10436H
SSDC33, 154.50x92.0 (SPB)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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