NVLJWD023N04CLTAG [ONSEMI]
Single N−Channel µCool™ Power MOSFET 40V 25A 23mΩ;
| 型号： | NVLJWD023N04CLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N−Channel µCool™ Power MOSFET 40V 25A 23mΩ |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Dual
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
23 mW @ 10 V
33 mW @ 4.5 V
40 V
25 A
40 V, 23 mW, 25 A
NVLJWD023N04CL
ELECTRICAL CONNECTION
D1
D2
Features
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G1
G2
G
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S1
S2
Dual N−Channel MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S1
G1
D2
D2
Parameter
Drain−to−Source Voltage
Symbol
Value
40
20
25
18
24
12
7
Unit
V
D1
MARKING
DIAGRAM
V
DSS
D1
Gate−to−Source Voltage
V
GS
V
G2
S2
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
A
023N
ALYW
C
WDFNW6 (2.2x2.3)
CASE 515AS
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
D
W
A
023N = Specific Device Code
R
(Note 1)
q
JC
T
C
= 100°C
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
= Work Week
T = 100°C
A
5
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
D
2
W
R
(Notes 1, 2)
q
JA
T = 100°C
A
1
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
104
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
20
25
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 1.5 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
6.3
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
74
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
January, 2023 − Rev. 1
NVLJWD023N04CL/D
NVLJWD023N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
18
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
mA
DSS
GS
DS
J
V
= 40 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 13 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.5
20
mV/°C
mW
GS(TH)
J
R
V
= 10 V
I
I
= 5 A
= 5 A
23
33
DS(on)
GS
GS
D
V
= 4.5 V
27
D
Forward Transconductance
g
FS
V
DS
= 10 V, I = 5 A
17
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
440
210
8
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
= 4.5 V, V = 32 V; I = 5 A
4
nC
nC
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
9
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
0.9
1.6
1.3
3
G(TH)
Q
V
= 10 V, V = 32 V; I = 5A
DS D
GS
GD
GP
GS
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
5
2
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 32 V,
DS
GS
D
I
= 5 A, R = 6 W
G
Turn−Off Delay Time
t
16
3
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.85
0.73
19
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
9.7
9.8
8
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 5 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVLJWD023N04CL
TYPICAL CHARACTERISTICS
25
20
15
10
25
4.0 V
V
DS
= 10 V
V
GS
= 4.5 V to 10 V
20
15
10
3.6 V
3.2 V
2.8 V
T = 25°C
J
5
0
5
0
T = 125°C
J
T = −55°C
J
0
1
2
3
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
30
20
160
140
120
100
T = 25°C
J
T = 25°C
D
J
I
= 5 A
V
= 4.5 V
= 10 V
GS
V
GS
80
60
40
10
0
20
0
1
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100
10
2.0
1.5
V
I
= 10 V
= 5 A
GS
T = 175°C
J
D
T = 150°C
J
1
T = 125°C
J
0.1
T = 85°C
J
0.01
0.001
1.0
0.5
T = 25°C
J
0.0001
0.00001
−50 −25
0
25
50
75
100 125 150 175
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVLJWD023N04CL
TYPICAL CHARACTERISTICS
10
1000
100
C
V
DS
= 32 V
ISS
9
8
7
6
5
4
3
2
I
D
= 5 A
T = 25°C
J
C
OSS
Q
Q
GD
GS
10
1
C
RSS
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
V
= 10 V
= 32 V
GS
V
DS
I
D
= 5 A
100
10
T = 125°C
J
t
T = 150°C
J
d(off)
10
1
t
d(on)
T = 25°C
T = 175°C
J
J
t
f
t
r
T = −55°C
J
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
T
V
= 25°C
C
≤ 10 V
GS
Single Pulse
100
10
T (initial) = 25°C
J
T (initial) = 100°C
J
1
0.5 ms
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100
0.1
0.1
0.1
1
10
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVLJWD023N04CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
10
1
2%
1%
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Response Curve
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJWD023N04CLTAG
023N
WDFNW6
(Pb−Free, Wettable Flanks)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVLJWD023N04CL
PACKAGE DIMENSIONS
WDFNW6 2.2x2.3, 0.8P
CASE 515AS
ISSUE O
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6
NVLJWD023N04CL
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