NVMFWS2D3P04M8LT1G [ONSEMI]
NVMFS2D3P04M8L Power MOSFET, Single, P-Channel, -40 V, 2.2 mΩ, -222 A;
| 型号： | NVMFWS2D3P04M8LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NVMFS2D3P04M8L Power MOSFET, Single, P-Channel, -40 V, 2.2 mΩ, -222 A |
| 文件： | 总9页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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MOSFET - Power, Single
P-Channel
-40 V, 2.2 mW, -222 A
NVMFS2D3P04M8L
Features
• Low R
to Minimize Conduction Losses
• High Current Capability
DS(on)
www.onsemi.com
• Avalanche Energy Specified
• NVMFWS2D3P04M8L − Wettable Flanks Product
• NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
V
R
I
D
(BR)DSS
DS(on)
2.2 mW @ −10 V
3.3 mW @ −4.5 V
−40 V
−222 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S (1, 2, 3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
Unit
V
G (4)
P−Channel
V
DSS
Gate−to−Source Voltage
V
"20
−222
−157
205
V
GS
Continuous Drain Cur-
T
= 25°C
= 100°C
= 25°C
I
A
C
D
D (5, 6)
rent R
(Notes 1, 2, 3)
q
JC
T
C
Steady
State
Power Dissipation R
(Notes 1, 2)
T
C
P
W
A
q
D
JC
MARKING
DIAGRAM
T
C
= 100°C
103
D
Continuous Drain Cur-
rent R (Notes 1, 2, 3)
T = 25°C
A
I
−31
D
S
S
S
G
D
D
q
JA
1
T = 100°C
A
−22
XXXXXX
AYWZZ
Steady
State
DFN5/DFNW5
CASES 506EZ/507AZ
Power Dissipation R
(Notes 1, 2)
T = 25°C
A
P
3.8
W
q
D
JA
T = 100°C
A
1.9
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−900
A
A
p
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
−171
A
Single Pulse Drain−to−Source Avalanche
E
AS
1516
mJ
Energy (I
= 40 A)
L(pk)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
R
0.7
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
39
°C/W
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2021 − Rev. 6
NVMFS2D3P04M8L/D
NVMFS2D3P04M8L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
9
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
−100
"100
mA
DSS
J
V
DS
= 0 V,
GS
V
= −40 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
V
V
= V , I = −2.7 mA
−0.7
−2.4
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
J
−4.6
mV/°C
GS(TH)
Drain−to−Source On Resistance
R
V
= −10 V, I = −30 A
1.6
2.1
2.2
3.3
mW
S
DS(on)
GS
D
= −4.5 V, I = −10 A
GS
D
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= −24 V, I = −75 A
250
FS
DS
D
C
V
= 0 V, f = 1.0 MHz,
5985
4228
88
pF
iss
GS
V
= −20 V
DS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
= −4.5 V
= −10 V
73.5
157
nC
G(TOT)
GS
V
= −20 V,
= −50 A
DS
D
I
V
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
13.9
26.2
17.8
2.53
G(TH)
Q
GS
GD
GP
V
GS
= −10 V, V = −20 V,
DS
I
= −50 A
D
Q
V
V
SWITCHING CHARACTERISTICS (Notes 4)
Turn−On Delay Time
Rise Time
t
16.3
57.4
508
373
ns
d(on)
t
r
V
= −4.5 V, V = −20 V,
DS
GS
D
I
= −50 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
−0.72
−0.57
159
−1.2
V
SD
GS
J
I
= −15 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
94.6
81.7
536
a
V
GS
= 0 V, dl /dt = 100 A/ms,
s
I = −50 A
s
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
NVMFS2D3P04M8L
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
4 V to 10 V
3.4 V
3.2 V
300
240
180
120
V
DS
= 3 V
2.8 V
T = 25°C
J
2.6 V
2.4 V
60
0
50
0
T = 125°C
J
T = −55°C
J
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
1
2
3
4
5
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
T = 25°C
D
10
8
J
I
= 30 A
V
= 4.5 V
GS
6
4
V
= 10 V
GS
1.5
1.0
2
0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250 300 350 400
V
GS
, GATE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T = 175°C
J
V
= 10 V
= 30 A
GS
T = 150°C
J
I
D
T = 125°C
J
1.6
1.4
1.2
1.0
0.8
T = 85°C
J
T = 25°C
J
1.E−09
1.E−10
0.6
0.4
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS2D3P04M8L
TYPICAL CHARACTERISTICS
100K
10K
1K
10
V
= −20 V
= −50 A
DS
9
8
7
6
5
4
3
I
D
T = 25°C
J
C
C
ISS
OSS
Q
Q
GD
GS
100
10
V
= 0 V
GS
2
1
0
C
T = 25°C
RSS
J
f = 1 MHz
0.1
1
10
100
0
20
40
60
80
100
120
140 160
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Gate
Charge
50
40
30
20
10K
1K
V
GS
= 0 V
t
d(off)
t
f
100
t
t
r
d(on)
T = 25°C
J
10
1
10
0
T = 125°C
J
T = −55°C
J
1
10
50
0.2
0.4
0.6
0.8
1.0
1.2
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
100
10
T
= 25°C
J(initial)
10 ms
0.5 ms
1 ms
T
= 25°C
C
T
= 100°C
Single Pulse
≤ 10 V
J(initial)
V
10 ms
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFS2D3P04M8L
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS2D3P04M8LT1G
2D3P04
CASE 506EZ, DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFWS2D3P04M8LT1G
2D3P4W
CASE 507AZ, DFNW5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS2D3P04M8L
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE O
q
q
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6
NVMFS2D3P04M8L
PACKAGE DIMENSIONS
DFNW5 5x6 (SO8FL HE WF)
CASE 507AZ
ISSUE O
q
q
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7
NVMFS2D3P04M8L
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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