NXH350N100H4Q2F2PG [ONSEMI]
SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode;
| 型号： | NXH350N100H4Q2F2PG |
| 厂家： | 
ONSEMI |
| 描述： | SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode PC 双极性晶体管 |
| 文件： | 总18页 (文件大小：1949K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Si/SiC Hybrid Module –
EliteSiC, I-Type NPC
1000 V, 350 A IGBT, 1200 V,
100 A SiC Diode,
PACKAGE PICTURE
Q2 Package
NXH350N100H4Q2F2
This high-density, integrated power module combines
high-performance IGBTs with rugged anti-parallel diodes.
Q2PACK INPC PRESS FIT PINS
CASE 180BH
Features
• Extremely Efficient Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
• Low Package Height
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Q2PACK INPC SOLDER PINS
CASE 180BS
• Solar Inverters
• Uninterruptable Power Supplies Systems
MARKING DIAGRAM
NXH350N100H4Q2F2SG/PG
ATYYWW
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
PIN CONNECTIONS
See details pin connections on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Figure 1. NXH350N100H4Q2F2PG/SG
Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
NXH350N100H4Q2F2/D
March, 2023 − Rev. 4
NXH350N100H4Q2F2
PIN CONNECTIONS
NTC1 NTC2
42 41
G2
40
E2 Ph1 Ph1 Ph1 Ph1 Ph1
39 38 37 36 35 34
Ph2 Ph2 Ph2 Ph2 Ph2
33
32 31 30 29
28
27
25
26
E3
SP
SN
G3
24
G1
23
E1
G4
E4
22
21
1
2
3
4
5
6
7
8
9
10
11 12
13 14
15
16 17
18 19 20
DC+ DC+ DC+ DC+ DC+
N1 N1 N1 N1 N1
N2 N2 N2 N2 N2
DC− DC− DC− DC− DC−
Figure 2. Pin Connections
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
OUTER IGBT (T1, T4)
Symbol
Value
Unit
Collector-Emitter Voltage
V
1000
V
V
CES
Gate-Emitter Voltage
Positive transient gate-emitter voltage (T
V
20
30
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
303
909
592
−40
175
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 150°C)
I
C(Pulse)
C
J
Maximum Power Dissipation (T = 150°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
INNER IGBT (T2, T3)
T
JMIN
T
JMAX
Collector-Emitter Voltage
V
1000
V
V
CES
Gate-Emitter Voltage
Positive transient gate-emitter voltage (T
V
20
30
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
329
987
532
−40
175
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 150°C)
I
C(Pulse)
C
J
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
IGBT INVERSE DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
T
JMIN
T
JMAX
V
1000
133
399
276
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
J
tot
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2
NXH350N100H4Q2F2
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (continued)
J
Rating
IGBT INVERSE DIODE (D1, D2, D3, D4)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE (D5, D6)
Symbol
Value
Unit
T
JMIN
−40
°C
°C
T
JMAX
175
Peak Repetitive Reverse Voltage
V
1200
98
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
294
239
−40
175
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMIN
T
JMAX
Operating Temperature under Switching Condition
Storage Temperature Range
T
−40 to +150
−40 to +125
°C
°C
VJOP
T
stg
INSULATION PROPERTIES
Isolation Test Voltage, t = 2 s, 50 Hz (Note 2)
Creepage Distance
V
is
4000
12.7
V
RMS
mm
Comparative Tracking Index
CTI
> 600
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters.
2. 4000 VAC
for 1 second duration is equivalent to 3333 VAC
for 1 minute duration.
RMS
RMS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OUTER IGBT (T1, T4) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
1.63
1.92
4.84
–
1000
mA
GE
GE
GE
GE
GE
CE
Collector-Emitter Saturation Voltage
= 15 V, I = 375 A, T = 25°C
V
V
1.80
V
C
J
CE(sat)
= 15 V, I = 375 A, T = 150°C
–
–
5.7
2000
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
Turn-on Delay Time
Rise Time
= V , I = 375 mA
4.1
–
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
nA
ns
CE
GES
T = 25°C
t
–
86
J
d(on)
V
V
= 600 V, I = 170 A
C
CE
GE
t
r
–
30
–
= −8 V, 15 V, R = 5 W
G
Turn-off Delay Time
Fall Time
t
–
312
32
–
d(off)
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
E
–
2376
5437
79
–
mJ
on
off
–
–
T = 125°C
t
t
–
–
ns
J
V
V
d(on)
= 600 V, I = 170 A
C
CE
t
–
35
–
r
= −8 V, 15 V, R = 5 W
GE
G
Turn-off Delay Time
Fall Time
–
357
73
–
d(off)
t
–
–
f
Turn-on Switching Loss per Pulse
E
–
–
mJ
4568
7421
on
off
Turn-off Switching Loss per Pulse
E
–
–
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3
NXH350N100H4Q2F2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OUTER IGBT (T1, T4) CHARACTERISTICS
Input Capacitance
V
= 20 V, V = 0 V, f = 1 MHz
C
–
–
–
–
–
24146
1027
106
–
–
–
–
–
pF
CE
GE
ies
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
res
V
CE
= 600 V, I = 375 A, V = 15 V
Q
g
680
nC
C
GE
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.22
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.12
–
K/W
V
thJC
NEUTRAL POINT DIODE (D5, D6) CHARACTERISTICS
Diode Forward Voltage
I = 100 A, T = 25°C
F
V
F
–
–
–
–
–
–
1.50
2.07
19
1.85
J
I = 100 A, T = 150°C
F
–
–
–
–
–
J
Reverse Recovery Time
T = 25°C
t
ns
mC
A
J
rr
V
V
= 600 V, I = 170 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
229
19
rr
RRM
= −8 V, 15 V, R = 5 W
G
I
Peak Rate of Fall of Recovery
Current
di/dt
6053
A/ms
Reverse Recovery Energy
Reverse Recovery Time
E
–
–
–
–
–
164
34
–
–
–
–
–
mJ
ns
rr
T = 125°C
t
rr
J
V
V
= 600 V, I = 120 A
C
CE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
RRM
359
17
mC
A
= −8 V, 15 V, R = 5 W
GE
G
I
Peak Rate of Fall of Recovery
Current
di/dt
4621
A/ms
Reverse Recovery Energy
E
–
–
211
–
–
mJ
rr
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.42
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.29
–
K/W
thJC
INNER IGBT (T2, T3) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
–
–
–
500
1.50
–
mA
GE
GE
GE
GE
GE
CE
CES
Collector-Emitter Saturation Voltage
= 15 V, I = 300 A, T = 25°C
V
V
1.27
1.34
4.96
–
V
C
J
CE(sat)
= 15 V, I = 300 A, T = 150°C
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
= V , I = 300 mA
4.1
–
5.7
1600
–
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
nA
ns
CE
GES
Turn-on Delay Time
T = 25°C
t
–
J
d(on)
69.5
31
V
V
= 600 V, I = 170 A
C
CE
GE
Rise Time
t
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
= −8 V, 15 V, R = 5 W
G
Turn-off Delay Time
Fall Time
t
422.5
51.5
3705
12590
66
d(off)
t
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
mJ
on
E
off
T = 125°C
t
t
ns
J
d(on)
V
V
= 600 V, I = 170 A
CE
GE
C
t
r
= −8 V, 15 V, R = 5 W
30.5
508.5
64
G
Turn-off Delay Time
Fall Time
d(off)
t
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
E
mJ
5777
18390
on
E
off
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4
NXH350N100H4Q2F2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
INNER IGBT (T2, T3) CHARACTERISTICS
Input Capacitance
V
= 20 V, V = 0 V, f = 1 MHz
C
–
–
–
–
–
25260
1009
118
–
–
–
–
–
pF
CE
GE
ies
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
res
V
CE
= 600 V, I = 300 A, V = 15 V
Q
g
720
nC
C
GE
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.24
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.13
–
K/W
V
thJC
IGBT INVERSE DIODE (D1, D2, D3, D4) CHARACTERISTICS
Diode Forward Voltage
I = 150 A, T = 25°C
F
V
F
–
–
–
–
–
–
2.06
1.77
96
2.44
J
I = 150 A, T = 150°C
F
–
–
–
–
–
J
Reverse Recovery Time
T = 25°C
t
ns
mC
A
J
rr
V
V
= 600 V, I = 170 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
5094
124
rr
RRM
= −8 V, 15 V, R = 5 W
G
I
Peak Rate of Fall of Recovery
Current
di/dt
4571
A/ms
Reverse Recovery Energy
Reverse Recovery Time
E
–
–
–
–
–
2069
192
–
–
–
–
–
mJ
ns
rr
T = 125°C
t
rr
J
V
V
= 600 V, I = 170 A
C
CE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
RRM
11900
148
mC
A
= −8 V, 15 V, R = 5 W
GE
G
I
Peak Rate of Fall of Recovery
Current
di/dt
4167
A/ms
Reverse Recovery Energy
E
–
–
4665
0.39
–
–
mJ
rr
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
K/W
thJH
Thermal Resistance − Chip-to-Case
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
R
–
0.25
–
K/W
thJC
T = 25°C
R
–
–
22
1.486
–
–
–
5
–
–
−
−
kW
kW
25
T = 100°C
R
100
DR/R
−5
–
%
Power Dissipation
P
D
200
2
mW
mW/K
K
Power Dissipation Constant
B-value
–
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3950
3998
B-value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping
NXH350N100H4Q2F2PG
PRESS FIT PINS
NXH350N100H4Q2F2PG
Q2PACK
(Pb-free/Halide-free)
12 Units / Blister Tray
NXH350N100H4Q2F2SG
SOLDER PINS
NXH350N100H4Q2F2SG
Q2PACK
(Pb-free/Halide-free)
12 Units / Blister Tray
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5
NXH350N100H4Q2F2
TYPICAL CHARACTERISTICS – OUTER IGBT, INNER IGBT
Figure 3. Typical Output Characteristics – Outer IGBT
Figure 4. Typical Output Characteristics – Outer IGBT
Figure 5. Typical Output Characteristics – Inner IGBT
Figure 6. Typical Output Characteristics – Inner IGBT
Figure 7. Transfer Characteristics – Outer IGBT
Figure 8. Transfer Characteristics – Inner IGBT
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6
NXH350N100H4Q2F2
TYPICAL CHARACTERISTICS – OUTER IGBT, INNER IGBT, IGBT INVERSE DIODE AND
NEUTRAL POINT DIODE
Figure 9. Typical Saturation Voltage
Figure 10. Typical Saturation Voltage
Characteristics − Outer IGBT
Characteristics − Inner IGBT
Figure 11. Inverse Diode Forward Characteristics
Figure 12. Buck Diode Forward Characteristics
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7
NXH350N100H4Q2F2
TYPICAL SWITCHING CHARACTERISTICS – OUTER IGBT
Figure 13. Typical Turn On Loss vs. IC
Figure 14. Typical Turn Off Loss vs. IC
Figure 15. Typical Turn On Loss vs. RG
Figure 16. Typical Turn Off Loss vs. RG
Figure 17. Typical Turn On Switching Time vs. IC
Figure 18. Typical Turn Off Switching Time vs. IC
Figure 19. Typical Turn On Switching Time vs. RG
Figure 20. Typical Turn On Switching Time vs. RG
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8
NXH350N100H4Q2F2
TYPICAL SWITCHING CHARACTERISTICS – INNER IGBT
Figure 21. Typical Turn On Loss vs. IC
Figure 22. Typical Turn Off Loss vs. IC
Figure 23. Typical Turn On Loss vs. RG
Figure 24. Typical Turn Off Loss vs. RG
Figure 25. Typical Turn On Switching Time vs. IC
Figure 26. Typical Turn Off Switching Time vs. IC
Figure 27. Typical Turn On Switching Time vs. RG
Figure 28. Typical Turn On Switching Time vs. RG
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9
NXH350N100H4Q2F2
TYPICAL SWITCHING CHARACTERISTICS – INVERSE DIODE
Figure 29. Typical Reverse Recovery Energy
Loss vs. IC
Figure 30. Typical Reverse Recovery Energy
Loss vs. RG
Figure 31. Typical Reverse Recovery Time vs. RG
Figure 32. Typical Reverse Recovery Charge vs. RG
Figure 33. Typical Reverse Recovery Peak
Current vs. RG
Figure 34. Typical di/dt vs. RG
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10
NXH350N100H4Q2F2
TYPICAL SWITCHING CHARACTERISTICS – NEUTRAL POINT DIODE
Figure 35. Typical Reverse Recovery Energy
Loss vs. IC
Figure 36. Typical Reverse Recovery Energy
Loss vs. RG
Figure 37. Typical Reverse Recovery Time vs. RG
Figure 38. Typical Reverse Recovery Charge vs. RG
Figure 39. Typical Reverse Recovery Peak
Current vs. RG
Figure 40. Typical di/dt vs. RG
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11
NXH350N100H4Q2F2
TRANSIENT THERMAL IMPEDANCE
Figure 41. Transient Thermal Impedance – Outer IGBT
Figure 42. Transient Thermal Impedance – Inner IGBT
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12
NXH350N100H4Q2F2
TRANSIENT THERMAL IMPEDANCE (CONTINUED)
Figure 43. Transient Thermal Impedance – Inverse Diode
Figure 44. Transient Thermal Impedance – Neutral Point Diode
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13
NXH350N100H4Q2F2
SAFE OPERATING AREA
Figure 45. FBSOA – Outer IGBT
Figure 46. RBSOA – Outer IGBT
Figure 47. FBSOA – Inner IGBT
Figure 48. RBSOA – Inner IGBT
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14
NXH350N100H4Q2F2
GATE CHARGE AND CAPACITANCE
Figure 49. Gate Voltage vs. Gate Charge – Outer IGBT
Figure 50. Gate Voltage vs. Gate Charge – Inner IGBT
Figure 51. Capacitance Charge – Outer IGBT
Figure 52. Capacitance Charge – Inner IGBT
TYPICAL CHARCTERISTICS – THERMISTOR
Figure 53. Thermistor Characteristics
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15
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93x47 (PRESSFIT)
CASE 180BH
ISSUE O
DATE 06 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09951H
PIM42 93X47 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93x47 (SOLDER PIN)
CASE 180BS
ISSUE O
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15232H
PIM42 93X47 (SOLDER PIN)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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