NXH300B100H4Q2F2PG [ONSEMI]
Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode;
| 型号： | NXH300B100H4Q2F2PG |
| 厂家： | 
ONSEMI |
| 描述： | Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode 双极性晶体管 |
| 文件： | 总14页 (文件大小：2161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Modules –
EliteSiC, 3 Channel Flying
Capacitor Boost 1000 V,
100 A IGBT, 1200 V,
PIM53, 93x47 (PRESSFIT)
30 A SiC Diode, Q2 Package
CASE 180CB
NXH300B100H4Q2F2,
NXH300B100H4Q2F2SG-R
This high−density, integrated power module combines
high−performance IGBTs with 1200 V SiC diode.
Features
PIM53, 93x47 (SOLDER PIN)
CASE 180CC
Extremely Efficient Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Module Design Offers High Power Density
Low Inductive Layout
3−channel in Q2BOOST Package
These are Pb−Free Devices
MARKING DIAGRAM
NXH300B100H4Q2F2xG
ATYYWW
NXH300B100H4Q2F2x = Specific Device Code
(x = P, S)
Typical Applications
Solar Inverter
Uninterruptible Power Supplies
AT
YYWW
= Assembly & Test Site Code
= Year and Work Week Code
PIN CONNECTION
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
Figure 1. NXH300B100H4Q2F2PG/SG/SG−R Schematic Diagram
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
NXH300B100H4Q2F2/D
March, 2023 − Rev. 4
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
ABSOLUTE MAXIMUM RATINGS (Note 1) (T = 25C unless otherwise noted)
J
Symbol
Parameter
Value
Unit
IGBT (T11, T21, T12, T22, T13, T23)
V
Collector−Emitter voltage
Gate−Emitter Voltage
1000
V
V
CES
V
20
30
GE
Positive transient gate−emitter voltage (Tpulse = 5 ꢀ s, D < 0.10)
I
Continuous Collector Current (@ V = 20 V, T = 80C)
73
A
A
C
GE
C
I
Pulsed Peak Collector Current @ T = 80C (T = 150C)
219
194
−40
175
C(Pulse)
C
J
P
Power Dissipation (T = 150C, T = 80C)
W
C
C
tot
J
C
T
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
JMIN
T
JMAX
IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) AND BYPASS DIODE (D51, D61, D52, D62, D53, D63)
V
Peak Repetitive Reverse Voltage
V
1600
36
RRM
I
F
Continuous Forward Current @ T = 80C
A
A
C
I
Repetitive Peak Forward Current (T = 150C, T limited by T )
Jmax
108
FRM
J
J
P
Maximum Power Dissipation @ T = 80C (T = 150C)
W
C
C
79
tot
C
J
T
JMIN
Minimum Operating Junction Temperature
−40
150
T
JMAX
Maximum Operating Junction Temperature
BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43)
V
Peak Repetitive Reverse Voltage
V
1200
36
RRM
I
F
Continuous Forward Current @ T = 80C
A
A
C
I
Repetitive Peak Forward Current (T = 150C, T limited by T )
Jmax
108
FRM
J
J
P
Maximum Power Dissipation @ T = 80C (T = 150C)
W
C
C
104
−40
175
tot
C
J
T
JMIN
Minimum Operating Junction Temperature
T
JMAX
Maximum Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
THERMAL AND INSULATION PROPERTIES (Note 1) (T = 25C unless otherwise noted)
J
Symbol
Rating
Value
Unit
THERMAL PROPERTIES
T
Operating Temperature under Switching Condition
Storage Temperature Range
−40 to 150
−40 to 125
C
C
VJOP
T
stg
INSULATION PROPERTIES
V
is
Isolation Test Voltage, t = 2 sec, 50 Hz (Note 3)
Creepage Distance
4000
12.7
V
RMS
mm
CTI
Comparative Tracking Index
>600
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. 4000 VAC
for 1 second duration is equivalent to 3333 VAC
for 1 minute duration.
RMS
RMS
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2
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
IGBT (T11, T21, T12, T22, T13, T23)
V
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
V
V
V
V
V
V
= 0 V, I =1 mA
1000
–
1118
1.80
2.03
5.08
−
–
2.25
–
V
V
(BR)CES
GE
GE
GE
GE
GE
GE
C
V
= 15 V, I = 100 A, T = 25C
C C
CE(SAT)
= 15 V, I = 100 A, T = 150C
–
C
C
V
Gate−Emitter Threshold Voltage
Collector−Emitter Cutoff Current
Gate Leakage Current
Internal Gate Resistor
Turn−On Delay Time
Rise Time
= V , I = 100 mA
4.1
–
5.9
800
400
−
V
GE(TH)
CE
C
I
= 0 V, V = 1000 V
ꢀ A
nA
ꢁ
CES
GES
CE
I
= 20 V, V = 0 V
–
–
CE
r
−
5
g
t
T = 25C
–
95
–
ns
d(on)
j
V
CE
V
GE
= 600 V, I = 50 A
C
t
r
–
15.42
267
59
–
= −9 V, +15 V, R = 6
ꢁ
G
t
Turn−Off Delay Time
Fall time
–
–
d(off)
t
f
–
–
E
Turn on switching loss
Turn off switching loss
Turn−On Delay Time
Rise Time
–
1030
1200
97
–
ꢀ
J
on
off
E
–
–
t
t
T = 125C
–
–
ns
d(on)
j
V
CE
V
GE
= 600 V, I = 50 A
C
t
–
18
–
r
= −9 V, +15 V, R = 6
ꢁ
G
Turn−Off Delay Time
Fall time
–
314
93
–
d(off)
t
f
–
–
E
Turn on switching loss
Turn off switching loss
Input capacitance
–
1260
2140
6323
241
34
–
ꢀ
J
on
off
E
–
–
C
V
V
=20 V, V = 0 V, f = 1 MHz
–
–
pF
ies
CE
GE
C
Output capacitance
–
–
oes
C
Reverse transfer capacitance
Gate Charge
–
–
res
Q
= 600 V, V = −15/+15 V, I = 75 A
–
340
0.66
0.48
–
nC
g
CE
GE
C
R
R
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
–
–
K/W
K/W
thJH
thJC
–
–
IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) AND BYPASS DIODE (D51, D61, D52, D62, D53, D63)
V
Diode Forward Voltage
I = 30 A, T = 25C
–
–
–
1.04
0.94
1.04
1.7
–
V
F
F
J
I = 30 A, T = 150C
F
J
R
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
–
K/W
thJH
BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43)
I
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V, T = 25C
–
–
−
–
–
–
–
–
−
600
1.7
−
ꢀ
A
R
R
J
V
I = 30 A, T = 25C
F
1.42
1.85
15
V
F
J
I = 30 A, T = 150C
F
J
t
Reverse Recovery Time
T = 25C
–
ns
nC
A
rr
J
V
DS
V
GE
= 600 V, I = 50 A
C
Q
rr
RRM
Reverse Recovery Charge
128
13
–
= −9 V, 15 V, R = 1
ꢁ
G
I
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
di/dt
4200
16
–
A/ꢀ s
ꢀ J
E
–
rr
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3
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43)
t
Reverse Recovery Time
T = 125C
–
–
–
–
–
–
–
19
175
17
–
–
–
–
–
–
–
ns
nC
rr
J
V
DS
V
GE
= 600 V, I = 50 A
C
Q
rr
RRM
Reverse Recovery Charge
= −9 V, 15 V, R = 1
ꢁ
G
I
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
A
di/dt
3153
18
A/ꢀ s
ꢀ J
E
rr
R
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
0.85
0.73
K/W
K/W
thJH
thJC
R
THERMISTOR CHARACTERISTICS
R
Nominal resistance
Nominal resistance
Deviation of R25
Power dissipation
Power dissipation constant
B−value
−
−
22
1486
−
−
−
5
−
−
−
−
kꢁ
25
R
T = 100C
ꢁ
100
ꢃ R/R
−5
−
%
mW
mW/K
K
P
200
2
D
−
B (25/50), tolerance 3%
B (25/100), tolerance 3%
−
3950
3998
B−value
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 5. Typical Saturation Voltage Characteristics
Figure 7. Boost Diode Forward Characteristics
Figure 4. Transfer Characteristics
Figure 6. Inverse Diode Forward Characteristics
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5
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED)
Figure 8. Typical Turn On Loss vs. IC
Figure 9. Typical Turn Off Loss vs. IC
Figure 10. Typical Turn On Loss vs. Rg
Figure 11. Typical Turn Off Loss vs. Rg
Figure 12. Typical Reverse Recovery Energy
Loss vs. IC
Figure 13. Typical Reverse Recovery Energy
Loss vs. Rg
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6
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED)
Figure 14. Typical Turn−Off Switching Time vs. IC
Figure 15. Typical Turn−On Switching Time vs. IC
Figure 16. Typical Turn−Off Switching Time vs. Rg
Figure 17. Typical Turn−On Switching Time vs. Rg
Figure 18. Typical Reverse Recovery Time vs. Rg
Figure 19. Typical Reverse Recovery Charge vs. Rg
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7
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED)
Figure 20. Typical Reverse Recovery Peak
Current vs. Rg
Figure 21. Typical di/dt vs. Rg
Figure 22. Typical Reverse Recovery Time vs. IC
Figure 23. Typical Reverse Recovery Charge vs. IC
Figure 24. Typical Reverse Recovery Current vs. IC
Figure 25. FBSOA
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8
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED)
Figure 26. RBSOA
Figure 27. Capacitance Charge
Figure 28. Gate Voltage vs. Gate Charge
Figure 29. NTC Characteristics
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9
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED)
Figure 30. Transient Thermal Impedance (IGBT)
Figure 31. Transient Thermal Impedance (BOOST DIODE)
Figure 32. Transient Thermal Impedance (INVERSE&BYPASS DIODE)
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10
NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH300B100H4Q2F2PG
PRESS FIT PINS
NXH300B100H4Q2F2PG
Q2BOOST − PIM53, 93x47 (PRESSFIT)
(Pb−Free and Halide−Free Press Fit Pins)
12 Units / Blister Tray
NXH300B100H4Q2F2SG,
NXH300B100H4Q2F2SG,
Q2BOOST − PIM53, 93x47 (SOLDER PIN)
(Pb−Free and Halide−Free Solder Pins)
12 Units / Blister Tray
NXH300B100H4Q2F2SG−R NXH300B100H4Q2F2SG−R
SOLDER PINS
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM53, 93x47 (PRESSFIT)
CASE 180CB
ISSUE O
DATE 30 APR 2020
GENERIC
MARKING DIAGRAM*
*This information is generic. Please
refer to device data sheet for actual
part marking. Pb−Free indicator, “G”
or microdot “ G”, may or may not be
present. Some products may not
XXXXX = Specific Device Code
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20720H
PIM53 93X47 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM53, 93x47 (SOLDER PIN)
CASE 180CC
ISSUE O
DATE 04 MAY 2020
GENERIC
MARKING DIAGRAM*
*This information is generic. Please
refer to device data sheet for actual
part marking. Pb−Free indicator, “G”
or microdot “ G”, may or may not be
present. Some products may not
XXXXX = Specific Device Code
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20721H
PIM53 93X47 (SOLDER PIN)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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