NXH25T120L2Q1PTG [ONSEMI]
功率集成模块 (PIM)，3 沟道 T 型 NPC 1200 V，25 A IGBT，650 V，25 A IGBT;
| 型号： | NXH25T120L2Q1PTG |
| 厂家： | 
ONSEMI |
| 描述： | 功率集成模块 (PIM)，3 沟道 T 型 NPC 1200 V，25 A IGBT，650 V，25 A IGBT PC 双极性晶体管 |
| 文件： | 总22页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NXH25T120L2Q1PG
Q1 3-Phase TNPC Module
The NXH25T120L2Q1PG/PTG is a case power module containing
a three channel T−type neutral−point clamped (TNPC) circuit. Each
channel has a two 1200 V, 25 A IGBTs with inverse diodes and two
650 V, 20 A IGBTs with inverse diodes. The module contains an NTC
thermistor.
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Features
• Low Package Height
• Compact 82.5 mm x 37.4 mm x 12 mm Package
• Press−fit Pins
• Options with Pre−applied Thermal Interface Material (TIM) and
Without Pre−applied TIM
• Thermistor
Typical Applications
• Solar Inverters
• UPS
Q1 3−TNPC
PRESS FIT
CASE 180AS
12, 13
DC+
DC+
1
T1
T5
T9
DEVICE MARKING
D1
D5
D9
43 G1
44 E1
38 G5
37 E5
35 G9
36 E9
NXH25T120L2Q1PG
ATYYWW
29 E2
30 G2
T2
D3
OUT1
41, 42
GND
GND
24 E6
2, 4
5 E3
23 G6
T6
T3
3 G3
D2
NXH25T120L2Q1PTG
ATYYWW
D7
OUT2
39, 40
21 E10
8, 10
22 G10
T7
11 G7
D6
OUT3
33, 34
D11
T10
T11
15 G11
9 E7
D4
NXH25T120L2Q1P or
NXH25T120L2Q1PT
= Specific Device Code
= Pb−Free Package
GND
14, 16
D10
T1
31
17 E11
D8
G
AT
T4
T8
T12
= Assembly & Test Site Code
D12
28 G4
27 E4
26 G8
25 E8
20 G12
19 E12
32
T2
YYWW = Year and Work Week Code
6, 7
DC−
DC−
18
PIN ASSIGNMENTS
Figure 1. NXH25T120L2Q1PG/PTG Schematic Diagram
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2018 − Rev. 0
NXH25T120L2Q1PG/D
NXH25T120L2Q1PG
Table 1. MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
HALF BRIDGE IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
25
A
c
J
Pulsed Collector Current (T = 175°C)
I
75
A
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
81
W
ms
°C
°C
J
tot
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T v 150°C
T
sc
5
GE
CE
J
Minimum Operating Junction Temperature
T
JMIN
−40
150
Maximum Operating Junction Temperature
NEUTRAL POINT IGBT
T
JMAX
Collector−Emitter Voltage
V
650
20
V
V
CES
Gate−Emitter Voltage
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
20
A
c
J
Pulsed Collector Current (T = 175°C)
I
60
A
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
50
W
ms
°C
°C
J
tot
Short Circuit Withstand Time @ V = 15 V, V = 400 V, T v 150°C
T
sc
5
GE
CE
J
Minimum Operating Junction Temperature
T
JMIN
−40
150
Maximum Operating Junction Temperature
HALF BRIDGE DIODE
T
JMAX
Peak Repetitive Reverse Voltage
V
1200
15
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C)
I
45
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
43
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE
T
JMIN
−40
150
T
JMAX
Peak Repetitive Reverse Voltage
V
650
15
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C)
I
45
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
39
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMIN
−40
150
T
JMAX
Storage Temperature range
T
stg
−40 to 125
°C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60Hz
Creepage distance
V
is
3000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH25T120L2Q1PG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
= 0 V, V = 1200 V
I
CES
–
–
–
300
2.50
–
mA
GE
CE
V
= 15 V, I = 25 A, T = 25°C
V
V
1.90
1.96
5.49
–
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 25 A, T = 125°C
–
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 1.5 mA
4.90
–
6.50
300
–
V
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
nA
ns
GE
CE
T = 25°C
J
t
–
59
d(on)
V
= 350 V, I = 15 A
= 15 V, R = 15 W
G
CE
C
Rise Time
t
–
26
–
r
V
GE
Turn−off Delay Time
t
–
242
52
–
d(off)
Fall Time
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
E
–
220
240
48
–
mJ
on
off
–
–
T = 125°C
t
t
–
–
ns
J
d(on)
V
= 350 V, I = 15 A
CE
C
Rise Time
t
–
29
–
r
V
GE
= 15 V, R = 15 W
G
Turn−off Delay Time
–
293
258
400
710
8502
187
154
352
1.17
–
d(off)
Fall Time
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
–
mJ
–
–
V
= 20 V, V = 0 V. f = 10 kHz
C
–
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
= 600 V, I = 25 A, V
=
15 V
Q
g
–
–
nC
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
R
–
–
°C/W
thJH
NEUTRAL POINT DIODE CHARACTERISTICS
Diode Forward Voltage
I = 15 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.43
1.60
3.76
59
−
−
V
F
J
I = 15 A, T = 125°C
F
J
Combined IGBT + Diode Voltage Drop
Reverse Recovery Time
I = 15 A, T = 25°C
V
DT
4.60
–
V
ns
F
J
T = 25°C
t
rr
J
V
CE
= 350 V, I = 15 A
C
Reverse Recovery Charge
Q
0.21
7
–
mC
A
rr
V
= 15 V, R = 15 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
RRM
di/dt
106
40
–
A/ms
mJ
E
rr
–
Reverse Recovery Time
T = 125°C
t
rr
67
–
ns
J
V
CE
= 350 V, I = 15 A
C
Reverse Recovery Charge
Q
rr
RRM
0.69
19
–
mC
A
V
= 15 V, R = 15 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
di/dt
451
100
2.45
–
A/ms
mJ
E
rr
–
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
R
–
°C/W
thJH
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3
NXH25T120L2Q1PG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
V
= 0 V, V = 650 V
I
CES
–
–
–
200
−
mA
GE
CE
Collector−Emitter Saturation Voltage
V
= 15 V, I = 20 A, T = 25°C
V
V
1.49
1.61
5.68
–
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 20 A, T = 125°C
–
−
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
GE
= V , I = 1.65 mA
4.70
–
6.50
200
–
V
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
nA
ns
GE
CE
T = 25°C
J
t
–
33
d(on)
V
= 350 V, I = 15 A
= 15V, R = 15 W
G
CE
C
Rise Time
t
–
18
–
r
V
GE
Turn−off Delay Time
t
–
126
43
–
d(off)
Fall Time
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
–
250
180
31
–
mJ
on
off
E
–
–
T = 125°C
t
t
–
–
ns
J
d(on)
V
= 350 V, I = 15 A
CE
C
Rise Time
t
–
19
–
r
V
GE
= 15 V, R = 15 W
G
Turn−off Delay Time
–
138
72
–
d(off)
Fall Time
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
E
–
390
300
3837
127
104
166
1.90
–
uJ
on
off
–
–
V
= 20 V, V = 0 V, f = 10 kHz
C
–
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
= 480 V, I = 20 A, V
=
15 V
Q
g
–
–
nC
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
R
–
–
°C/W
thJH
HALF BRIDGE DIODE CHARACTERISTICS
Diode Forward Voltage
I = 15 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
2.47
1.97
63
3
–
–
–
–
–
–
–
–
–
–
–
–
V
F
J
I = 15 A, T = 125°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
ns
mC
A
J
V
CE
= 350 V, I = 15 A
C
Reverse Recovery Charge
Q
rr
RRM
0.45
17
V
= 15 V, R = 15 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
di/dt
313
70
A/ms
mJ
E
rr
Reverse Recovery Time
T = 125°C
t
rr
233
1.55
22
ns
J
V
CE
= 350 V, I = 15 A
C
Reverse Recovery Charge
Q
rr
RRM
mC
A
V
= 15 V, R = 15 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
di/dt
76
A/ms
mJ
E
rr
360
2.21
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
R
°C/W
thJH
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NXH25T120L2Q1PG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
R
−
−
22
−
−
5
−
−
−
−
kW
W
25
T = 100°C
R
1468
100
DR/R
−5
−
%
Power dissipation
P
D
200
2
mW
mW/K
K
Power dissipation constant
B−value
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
−
3950
3998
B−value
−
K
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH25T120L2Q1PG
NXH25T120L2Q1PG
Q1 3−Phase TNPC − Case 180AS
21 Units / Blister Tray
Press−fit Pins
(Pb*Free)
Q1 3−Phase TNPC − Case 180AS
Press−fit Pins
NXH25T120L2Q1PTG
NXH25T120L2Q1PTG
21 Units / Blister Tray
with pre−applied thermal interface material (TIM)
(Pb*Free)
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5
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
50
45
40
35
30
25
20
15
10
50
V
= 19 to 11 V
V
GE
= 19 to 11 V
GE
45
40
35
30
25
20
15
10
V
= 9 V
GE
T = 150°C
J
T = 25°C
J
V
GE
= 9 V
V
GE
= 7 V
5
0
5
0
V
GE
= 7 V
0
1
2
3
4
0
1
2
3
4
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
50
45
40
35
30
25
20
15
10
30
25
20
15
10
T = 150°C
J
T = 25°C
J
T = 150°C
J
5
0
5
0
T = 25°C
J
0
2
4
6
8
10
0
1
2
3
4
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 4. Typical Transfer Characteristics
Figure 5. Diode Forward Characteristics
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NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
10
1
DUT = 50%
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 6. Transient Thermal Impedance (Half Bridge IGBT)
10
1
DUT = 50%
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 7. Transient Thermal Impedance (Half Bridge Diode)
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NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
1K
100
10
1K
Single Nonrepetitive
Pulse T = 25°C
C
100
50 ms
100 ms
1 ms
DC
10
1
1
Curves must be derated
linearly with increase in
temperature
V
= 15 V
GE
TC = 150°C
0.1
1
10
100
1K
10K
1
10
100
1K
10K
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. FBSOA
Figure 9. RBSOA
16
14
12
10
8
V
= 600 V
= 25 A
= 15 V
CE
I
C
V
GE
6
4
2
0
0
50
100
150
200
250
300 350 400
Q , GATE CHARGE (nC)
g
Figure 10. Gate Voltage vs. Gate Charge
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NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
50
45
40
35
30
25
20
15
10
50
V
= 19 to 11 V
V
= 19 to 11 V
GE
GE
45
40
35
30
25
20
15
10
T = 150°C
T = 25°C
J
J
V
V
= 9 V
= 7 V
GE
V
= 9 V
= 7 V
GE
GE
5
0
5
0
V
GE
0
0
0
1
2
3
4
0
0
0
1
2
3
4
8
4
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 11. Typical Output Characteristics
Figure 12. Typical Output Characteristics
30
25
30
25
V
GE
= 19 to 11 V
V
= 19 to 11 V
GE
V
GE
= 9 V
T = 25°C
J
20
15
10
20
15
10
V
V
= 9 V
T = 150°C
GE
J
V
GE
= 7 V
5
0
5
0
= 7 V
GE
2
4
6
8
2
4
6
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Typical Output Characteristics
(IC vs. VDT
Figure 14. Typical Output Characteristics
)
(IC vs. VDT)
50
45
40
35
30
25
20
15
30
25
20
15
10
T = 25°C
J
T = 150°C
J
10
5
5
0
T = 150°C
J
T = 25°C
J
0
2
4
6
8
10
12
1
2
3
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 15. Typical Transfer Characteristics
Figure 16. Diode Forward Characteristics
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NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
10
1
DUT = 50%
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.0001
0.001
0.00001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 17. Transient Thermal Impedance (Neutral Point IGBT)
10
1
DUT = 50%
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 18. Transient Thermal Impedance (Neutral Point Diode)
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NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
1K
100
10
1K
Single Nonrepetitive
Pulse T = 25°C
C
50 ms
100 ms
100
10
1
1 ms
DC
1
Curves must be derated
linearly with increase in
temperature
V
= 15 V
GE
TC = 150°C
0.1
1
10
100
1K
1
10
100
1K
10K
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 19. FBSOA
Figure 20. RBSOA
16
14
12
10
8
V
= 480 V
= 20 A
= 15 V
CE
I
C
V
GE
6
4
2
0
0
20
40
60
80
100 120 140 160 180
Q , GATE CHARGE (nC)
g
Figure 21. Gate Voltage vs. Gate Charge
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NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
1.0
0.8
0.6
0.4
0.6
125°C
125°C
V
V
R
= 350 V
CE
V
V
I
= 350 V
CE
=
15 V
GE
=
15 V
0.5
0.4
0.3
GE
= 15 W
= 15 A
G
C
25°C
25°C
0.2
0
0.2
0.1
0
0
0
5
10
15
20
25
30
35
35
35
0
0
0
5
10
15
20
(W)
25
30
35
35
35
I
(A)
R
G
C
Figure 22. Typical Switching Loss Eon vs. IC
Figure 23. Typical Switching Loss Eon vs. RG
1.2
1.0
0.8
0.6
0.4
0.8
0.7
0.6
0.5
0.4
125°C
125°C
V
V
R
= 350 V
15 V
= 15 W
CE
=
GE
G
25°C
V
V
= 350 V
15 V
= 15 A
CE
=
GE
I
C
0.2
0
0.3
0.2
25°C
5
10
15
20
25
30
5
10
15
20
(W)
25
30
I
(A)
R
G
C
Figure 24. Typical Switching Loss Eoff vs. IC
Figure 25. Typical Switching Loss Eoff vs. RG
70
65
60
55
50
120
120
80
25°C
V
V
= 350 V
15 V
= 15 W
V
V
I
= 350 V
= 15 V
= 15 A
CE
CE
25°C
=
GE
GE
R
C
G
125°C
125°C
60
40
20
0
45
40
5
10
15
20
25
30
5
10
15
20
(W)
25
30
I
(A)
R
G
C
Figure 26. Typical Switching Time TDon vs. IC
Figure 27. Typical Switching Time TDon vs. RG
www.onsemi.com
12
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
380
360
340
320
300
280
260
500
125°C
125°C
V
V
I
= 350 V
450
400
350
300
250
200
V
V
R
= 350 V
CE
CE
=
15 V
=
15 V
GE
GE
= 15 A
= 15 W
C
G
25°C
25°C
240
220
150
100
0
0
0
5
10
15
20
25
30
35
35
35
0
0
0
5
10
15
20
(W)
25
30
35
35
35
I
(A)
R
G
C
Figure 28. Typical Switching Time TDoff vs. IC
Figure 29. Typical Switching Time TDoff vs. RG
40
45
35
30
25
20
60
50
40
30
20
V
V
R
= 350 V
15 V
= 15 W
CE
V
V
I
= 350 V
CE
=
GE
=
15 V
GE
G
= 15 A
C
125°C
125°C
25°C
10
0
15
10
25°C
10
5
15
20
25
30
5
10
15
20
(W)
25
30
I
(A)
R
G
C
Figure 30. Typical Switching Time Tr vs. IC
Figure 31. Typical Switching Time Tr vs. RG
300
250
200
150
100
300
250
200
150
125°C
125°C
V
V
R
= 350 V
15 V
= 15 W
CE
=
GE
V
V
I
= 350 V
CE
G
25°C
=
15 V
GE
= 15 A
C
100
50
50
0
25°C
5
10
15
20
25
30
5
10
15
20
(W)
25
30
I
(A)
R
G
C
Figure 32. Typical Switching Time Tf vs. IC
Figure 33. Typical Switching Time Tf vs. RG
www.onsemi.com
13
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
0.12
0.10
0.08
0.14
0.12
0.10
0.08
0.06
125°C
125°C
V
V
= 350 V
CE
V
V
R
= 350 V
CE
=
15 V
GE
=
15 V
GE
I
C
= 15 A
= 15 W
G
0.06
0.04
0.04
0.02
25°C
25°C
0
0
0
5
10
15
20
25
30
35
35
35
0
0
0
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 34. Typical Reverse Recovery Energy
vs. IC
Figure 35. Typical Reverse Recovery Energy
vs. RG
85
80
75
70
65
120
100
80
125°C
V
V
R
= 350 V
CE
V
V
I
= 350 V
CE
=
15 V
GE
=
15 V
GE
= 15 W
= 15 A
G
C
60
25°C
125°C
40
20
60
55
25°C
10
5
10
15
20
25
30
5
15
20
(W)
25
30
35
I
C
(A)
R
G
Figure 36. Typical Reverse Recovery Time vs.
IC
Figure 37. Typical Reverse Recovery Time vs.
RG
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.8
0.7
125°C
125°C
0.6
0.5
0.4
V
V
= 350 V
=
CE
V
V
R
= 350 V
CE
15 V
GE
=
15 V
GE
I
C
= 15 A
= 15 W
G
25°C
0.3
0.2
0.2
0.1
25°C
5
10
15
20
25
30
5
10
15
20
(W)
25
30
35
I
C
(A)
R
G
Figure 38. Typical Reverse Recovery Charge
vs. IC
Figure 39. Typical Reverse Recovery Charge
vs. RG
www.onsemi.com
14
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
25
20
15
10
30
125°C
V
V
= 350 V
CE
=
15 V
GE
25
20
15
10
I
C
= 15 A
125°C
V
V
R
= 350 V
CE
=
15 V
GE
= 15 W
G
25°C
25°C
5
0
5
0
0
5
10
15
20
25
30
35
0
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 40. Typical Reverse Recovery Current
vs. IC
Figure 41. Typical Reverse Recovery Current
vs. RG
500
450
400
350
300
250
200
1600
1400
1200
1000
800
125°C
125°C
V
V
= 350 V
CE
=
15 V
GE
I
C
= 15 A
V
V
R
= 350 V
CE
=
15 V
GE
= 15 W
G
600
25°C
25°C
400
150
100
50
200
0
0
5
10
15
20
25
30
35
0
5
10
15
20
(W)
25
35
35
I
(A)
R
G
C
Figure 42. Typical di/dt vs. IC
Figure 43. Typical di/dt vs. RG
www.onsemi.com
15
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.55
125°C
125°C
V
V
R
= 350 V
V
V
I
= 350 V
CE
CE
0.50
0.45
0.40
0.35
0.30
=
15 V
=
15 V
GE
GE
= 15 W
= 15 A
G
C
25°C
25°C
0.25
0.20
0.15
0.2
0.1
0
0
0
5
10
15
20
25
30
35
0
0
0
5
10
15
20
(W)
25
30
35
35
35
I
(A)
R
G
C
Figure 44. Typical Switching Energy Eon vs. IC
Figure 45. Typical Switching Energy Eon vs.
RG
0.7
0.6
0.5
0.4
0.3
0.2
0.32
0.30
0.28
0.26
0.24
0.22
25°C
125°C
V
V
= 350 V
15 V
= 15 W
CE
=
GE
R
G
125°C
V
V
= 350 V
CE
=
15 V
GE
I
= 15 A
C
0.20
0.18
0.1
0
25°C
5
10
15
20
25
30
35
5
10
15
20
(W)
25
30
I
(A)
R
G
C
Figure 46. Typical Switching Energy Eoff vs. IC
Figure 47. Typical Switching Energy Eoff vs.
RG
38
36
34
32
30
28
26
70
60
50
40
30
125°C
V
V
= 350 V
15 V
= 15 A
CE
=
GE
I
C
25°C
125°C
V
V
= 350 V
CE
=
15 V
GE
20
10
25°C
24
22
R = 15 W
G
5
10
15
20
25
30
35
5
10
15
20
(W)
25
30
I
(A)
R
G
C
Figure 48. Typical Switching Time TDon vs. IC
Figure 49. Typical Switching Time TDon vs. RG
www.onsemi.com
16
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
280
260
240
220
200
180
160
240
125°C
125°C
V
V
I
= 350 V
V
V
R
= 350 V
CE
CE
220
200
180
160
140
120
100
=
15 V
=
15 V
GE
GE
= 15 A
= 15 W
C
G
25°C
25°C
140
120
100
80
60
0
0
0
5
10
15
20
25
30
35
0
0
0
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 50. Typical Switching Time TDoff vs. IC
Figure 51. Typical Switching Time TDoff vs. RG
35
30
35
30
25
20
15
125°C
V
V
= 350 V
CE
V
V
R
= 350 V
125°C
CE
=
15 V
GE
=
15 V
GE
I
C
= 15 A
= 15 W
G
25°C
25°C
25
20
15
10
10
5
5
10
15
20
25
30
35
5
10
15
20
(W)
25
30
35
I
C
(A)
R
G
Figure 52. Typical Switching Time Tr vs. IC
Figure 53. Typical Switching Time Tr vs. RG
100
90
80
70
60
50
40
30
80
75
70
125°C
V
V
= 350 V
CE
125°C
=
15 V
GE
R
= 15 W
G
65
60
55
50
V
V
= 350 V
CE
=
15 V
GE
I
C
= 15 A
25°C
45
40
25°C
20
10
5
10
15
20
25
30
35
5
10
15
20
(W)
25
30
35
I
C
(A)
R
G
Figure 54. Typical Switching Time Tf vs. IC
Figure 55. Typical Switching Time Tf vs. RG
www.onsemi.com
17
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.45
125°C
125°C
0.40
0.35
0.30
0.25
0.20
0.15
0.10
V
V
R
= 350 V
CE
=
15 V
GE
= 15 W
G
V
V
= 350 V
CE
=
15 V
GE
25°C
I
C
= 15 A
25°C
0.1
0
0.05
0
0
0
0
5
10
15
20
25
30
35
35
35
0
0
0
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 56. Typical Reverse Recovery Energy
vs. IC
Figure 57. Typical Reverse Recovery Energy
vs. RG
600
500
400
350
125°C
V
V
= 350 V
15 V
= 15 W
CE
V
V
= 350 V
CE
=
GE
=
15 V
GE
= 15 A
R
125°C
25°C
G
300
250
200
150
100
I
C
400
300
200
25°C
100
0
50
0
5
10
15
20
25
30
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 58. Typical Reverse Recovery Time vs.
IC
Figure 59. Typical Reverse Recovery Time vs.
RG
3.0
2.5
2.0
1.5
1.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
125°C
125°C
V
V
R
= 350 V
15 V
= 15 W
CE
=
GE
G
V
V
= 350 V
15 V
= 15 A
CE
=
GE
I
C
25°C
25°C
0.5
0
0.4
0.2
5
10
15
20
25
30
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 60. Typical Reverse Recovery Charge
vs. IC
Figure 61. Typical Reverse Recovery Charge
vs. RG
www.onsemi.com
18
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
26
24
35
125°C
V
V
I
= 350 V
CE
30
25
20
=
15 V
GE
= 15 A
22
20
C
125°C
25°C
25°C
18
16
V
V
R
= 350 V
CE
15
10
=
15 V
14
12
GE
= 15 W
G
0
5
10
15
20
25
30
35
0
5
10
15
20
(W)
25
30
35
I
(A)
R
G
C
Figure 62. Typical Reverse Recovery Current
vs. IC
Figure 63. Typical Reverse Recovery Current
vs. RG
700
600
500
400
300
200
2500
2000
1500
1000
25°C
V
V
R
= 350 V
CE
V
V
= 350 V
CE
=
15 V
25°C
GE
=
15 V
GE
= 15 W
G
I
C
= 15 A
125°C
500
0
125°C
100
0
0
5
10
15
20
25
30
35
0
5
10
15
20
(W)
25
35
35
I
C
(A)
R
G
Figure 64. Typical di/dt vs. IC
Figure 65. Typical di/dt vs. RG
www.onsemi.com
19
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 71x37.4
CASE 180AS
ISSUE O
DATE 25 JUN 2018
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PIM44, 71x37.4
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
PIM44, 71x37.4
CASE 180AS
ISSUE O
DATE 15 JUN 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
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PIM44, 71x37.4
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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rights of others.
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2
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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