NXH350N100H4Q2F2P1G [ONSEMI]
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package;
| 型号： | NXH350N100H4Q2F2P1G |
| 厂家： | 
ONSEMI |
| 描述： | Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package PC 双极性晶体管 |
| 文件： | 总20页 (文件大小：2746K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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PACKAGE PICTURE
Si/SiC Hybrid Module –
EliteSiC, I-Type NPC 1000 V,
350 A IGBT, 1200 V,
100 A SiC Diode, Q2 Package
NXH350N100H4Q2F2P1G,
NXH350N100H4Q2F2S1G,
NXH350N100H4Q2F2S1G-R,
NXH350N100H4Q2F2P1G-R
Q2PACK INPC PRESS FIT PINS
CASE 180BH
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
• Extremely Efficient Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
Q2PACK INPC SOLDER PINS
CASE 180BS
• Low Package Height
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
Typical Applications
NXH350N100H4Q2F2P1G/S1G/S1G−R/P1G−R
ATYYWW
• Solar Inverters
• Uninterruptable Power Supplies Systems
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
PIN CONNECTIONS
See details pin connections on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Figure 1.
NXH350N100H4Q2F2P1G/S1G/S1G−R/P1G−R
Schematic Diagram
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
NXH350N100H4Q2F2P1G/D
March, 2023 − Rev. 5
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
PIN CONNECTIONS
Figure 2. Pin Connections
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
OUTER IGBT (T1, T4)
Collector-Emitter Voltage
Gate-Emitter Voltage
V
1000
V
V
CES
V
20
30
GE
Positive Transient Gate−Emitter Voltage (T
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
303
909
592
−40
175
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 150°C)
I
C(Pulse)
C
J
Maximum Power Dissipation (T = 150°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
INNER IGBT (T2, T3)
T
JMIN
T
JMAX
Collector-Emitter Voltage
V
1000
V
V
CES
Gate-Emitter Voltage
Positive Transient Gate−Emitter Voltage (T
V
20
30
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
298
894
731
−40
175
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 150°C)
I
C(Pulse)
C
J
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
IGBT INVERSE DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
T
JMIN
T
JMAX
V
1000
133
399
276
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
J
tot
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2
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (continued)
J
Rating
IGBT INVERSE DIODE (D1, D2, D3, D4)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE (D5, D6)
Symbol
Value
Unit
T
JMIN
−40
°C
°C
T
JMAX
175
Peak Repetitive Reverse Voltage
V
1200
98
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
294
239
−40
175
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMIN
T
JMAX
Operating Temperature under Switching Condition
Storage Temperature Range
T
−40 to +150
−40 to +125
°C
°C
VJOP
T
stg
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz (Note 2)
Creepage Distance
V
is
4000
12.7
V
RMS
mm
Comparative Tracking Index
CTI
> 600
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters.
2. 4000 VAC
for 1 second duration is equivalent to 3333 VAC
for 1 minute duration.
RMS
RMS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OUTER IGBT (T1, T4) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
1.63
1.92
4.84
–
1000
mA
GE
GE
GE
GE
GE
CE
Collector-Emitter Saturation Voltage
= 15 V, I = 375 A, T = 25°C
V
V
2.3
–
V
C
J
CE(sat)
= 15 V, I = 375 A, T = 150°C
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
Turn-on Delay Time
Rise Time
= V , I = 375 mA
3.8
–
6.1
2000
–
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
nA
ns
CE
GES
T = 25°C
t
–
85
J
d(on)
V
V
= 600 V, I = 150 A
C
CE
GE
t
r
–
27
–
= −9 V, 15 V, R = 6 W
G
Turn-off Delay Time
Fall Time
t
–
319
52
–
d(off)
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
E
–
2.5
4.9
80
–
mJ
ns
on
off
–
–
T = 125°C
t
t
–
–
J
V
V
d(on)
= 600 V, I = 150 A
C
CE
t
–
31
–
r
= −9 V, 15 V, R = 6 W
GE
G
Turn-off Delay Time
Fall Time
–
355
70
–
d(off)
t
–
–
f
Turn-on Switching Loss per Pulse
E
–
–
mJ
3.1
7.3
on
off
Turn-off Switching Loss per Pulse
E
–
–
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3
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OUTER IGBT (T1, T4) CHARACTERISTICS
Input Capacitance
V
= 20 V, V = 0 V, f = 1 MHz
C
–
–
–
–
24146
1027
106
–
–
–
–
pF
CE
GE
ies
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
res
V
CE
V
GE
= 600 V, I = 375 A,
Q
g
1249
nC
C
= −15 V~15 V
Thermal Resistance −
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
–
–
0.22
0.12
–
–
K/W
K/W
thJH
thJC
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
NEUTRAL POINT DIODE (D5, D6) CHARACTERISTICS
Diode Forward Voltage
I = 100 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
1.50
2.07
19
1.85
–
V
F
J
I = 100 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
–
ns
nC
A
J
V
V
= 600 V, I = 150 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
RRM
229
19
–
= −8 V, 15 V, R = 6 W
G
I
–
E
rr
164
34
–
mJ
T = 125°C
t
rr
–
ns
nC
A
J
V
V
= 600 V, I = 150 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Q
rr
RRM
359
17
–
= −8 V, 15 V, R = 6 W
G
I
–
E
rr
211
0.42
–
mJ
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
–
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.29
–
K/W
thJC
INNER IGBT (T2, T3) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
–
–
–
1.75
2.11
5
500
2.3
–
mA
GE
GE
GE
GE
GE
CE
CES
Collector-Emitter Saturation Voltage
= 15 V, I = 400 A, T = 25°C
V
V
V
C
J
CE(sat)
= 15 V, I = 400 A, T = 150°C
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
= V , I = 400 mA
4.1
–
6.1
2000
–
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
–
nA
ns
CE
GES
Turn-on Delay Time
T = 25°C
t
–
J
d(on)
70
31
V
V
= 600 V, I = 150 A
C
CE
GE
Rise Time
t
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
= −9 V, 15 V, R = 11 W
G
Turn-off Delay Time
Fall Time
t
423
74
d(off)
t
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
mJ
ns
6.4
4.2
66
on
E
off
T = 125°C
t
t
J
d(on)
V
V
= 600 V, I = 150 A
CE
GE
C
t
r
= −9 V, 15 V, R = 11 W
31
G
Turn-off Delay Time
Fall Time
509
88
d(off)
t
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
E
mJ
pF
9.7
on
E
8.2
26093
1012
104
off
Input Capacitance
V
CE
= 20 V, V = 0 V, f = 1 MHz
C
–
–
–
–
–
–
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
INNER IGBT (T2, T3) CHARACTERISTICS
Internal Gage Resistor
R
–
–
1.25
−
W
gint
Total Gate Charge
V
CE
V
GE
= 600 V, I = 400 A,
= −15 V~15 V
Q
g
1304
–
nC
C
Thermal Resistance −
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
–
–
0.24
0.13
–
–
K/W
K/W
thJH
thJC
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
IGBT INVERSE DIODE (D1, D2, D3, D4) CHARACTERISTICS
Diode Forward Voltage
I = 150 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
2.06
1.77
105
2.6
–
V
F
J
I = 150 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
–
ns
nC
A
J
V
V
= 600 V, I = 150 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
RRM
4179
97
–
= −8 V, 15 V, R = 6 W
G
I
–
E
rr
4665
179
–
mJ
T = 125°C
t
rr
–
ns
nC
A
J
V
V
= 600 V, I = 150 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Q
rr
RRM
11900
133
–
= −8 V, 15 V, R = 6 W
G
I
–
E
rr
3783
0.39
–
mJ
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
–
K/W
thJH
Thermal Resistance − Chip-to-Case
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
R
–
0.25
–
K/W
thJC
T = 25°C
R
–
–
22
1486
–
–
–
5
–
–
−
−
kW
kW
25
T = 100°C
R
100
DR/R
−5
–
%
Power Dissipation
P
D
200
2
mW
mW/K
K
Power Dissipation Constant
B-value
–
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3950
3998
B-value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping
NXH350N100H4Q2F2P1G,
NXH350N100H4Q2F2P1G−R
PRESS FIT PINS
NXH350N100H4Q2F2P1G,
NXH350N100H4Q2F2P1G−R
Q2PACK
(Pb−Free/Halide−Free)
12 Units / Blister Tray
NXH350N100H4Q2F2S1G,
NXH350N100H4Q2F2S1G−R
SOLDER PINS
NXH350N100H4Q2F2S1G,
NXH350N100H4Q2F2S1G−R
Q2PACK
(Pb−Free/Halide−Free)
12 Units / Blister Tray
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL CHARACTERISTICS – OUTER IGBT, INNER IGBT
Figure 3. Typical Output Characteristics – Outer IGBT
Figure 4. Typical Output Characteristics – Outer IGBT
Figure 5. Typical Output Characteristics – Inner IGBT
Figure 6. Typical Output Characteristics – Inner IGBT
Figure 7. Transfer Characteristics – Outer IGBT
Figure 8. Transfer Characteristics – Inner IGBT
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6
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL CHARACTERISTICS – OUTER IGBT, INNER IGBT, IGBT INVERSE DIODE AND
NEUTRAL POINT DIODE
Figure 9. Typical Saturation Voltage
Figure 10. Typical Saturation Voltage
Characteristics − Outer IGBT
Characteristics − Inner IGBT
Figure 11. Inverse Diode Forward Characteristics
Figure 12. Buck Diode Forward Characteristics
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7
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – OUTER IGBT
Figure 13. Typical Turn On Loss vs. IC
Figure 14. Typical Turn Off Loss vs. IC
Figure 15. Typical Turn On Loss vs. RG
Figure 16. Typical Turn Off Loss vs. RG
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8
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – OUTER IGBT (CONTINUED)
Figure 17. Typical Turn On Switching Time vs. IC
Figure 18. Typical Turn Off Switching Time vs. IC
Figure 19. Typical Turn On Switching Time vs. RG
Figure 20. Typical Turn Off Switching Time vs. RG
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9
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – INNER IGBT
Figure 21. Typical Turn On Loss vs. IC
Figure 22. Typical Turn Off Loss vs. IC
Figure 23. Typical Turn On Loss vs. RG
Figure 24. Typical Turn Off Loss vs. RG
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10
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – INNER IGBT (CONTINUED)
Figure 25. Typical Turn On Switching Time vs. IC
Figure 26. Typical Turn Off Switching Time vs. IC
Figure 27. Typical Turn On Switching Time vs. RG
Figure 28. Typical Turn Off Switching Time vs. RG
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11
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – INVERSE DIODE
Figure 29. Typical Reverse Recovery Energy
Loss vs. IC
Figure 30. Typical Reverse Recovery Energy
Loss vs. RG
Figure 31. Typical Reverse Recovery Time vs. RG
Figure 32. Typical Reverse Recovery Charge vs. RG
Figure 33. Typical Reverse Recovery Peak
Current vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – NEUTRAL POINT DIODE
Figure 34. Typical Reverse Recovery Energy
Loss vs. IC
Figure 35. Typical Reverse Recovery Energy
Loss vs. RG
Figure 36. Typical Reverse Recovery Time vs. RG
Figure 37. Typical Reverse Recovery Charge vs. RG
Figure 38. Typical Reverse Recovery Peak
Current vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TRANSIENT THERMAL IMPEDANCE
Figure 39. Transient Thermal Impedance – Outer IGBT
Figure 40. Transient Thermal Impedance – Inner IGBT
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TRANSIENT THERMAL IMPEDANCE (CONTINUED)
Figure 41. Transient Thermal Impedance – Inverse Diode
Figure 42. Transient Thermal Impedance – Neutral Point Diode
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
SAFE OPERATING AREA
Figure 43. FBSOA – Outer IGBT
Figure 44. RBSOA – Outer IGBT
Figure 45. FBSOA – Inner IGBT
Figure 46. RBSOA – Inner IGBT
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
GATE CHARGE AND CAPACITANCE
15
12
15
12
Vce = 600 V
Vce = 600 V
9
6
3
0
9
6
3
0
−3
−3
−6
−9
−6
−9
−12
−15
−12
−15
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
1200
1400
Charge (nC)
Charge (nC)
Figure 47. Gate Voltage vs. Gate Charge – Outer IGBT
Figure 48. Gate Voltage vs. Gate Charge – Inner IGBT
Figure 49. Capacitance Charge – Outer IGBT
Figure 50. Capacitance Charge – Inner IGBT
TYPICAL CHARCTERISTICS – THERMISTOR
Figure 51. Thermistor Characteristics
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93x47 (PRESSFIT)
CASE 180BH
ISSUE O
DATE 06 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09951H
PIM42 93X47 (PRESS FIT)
PAGE 1 OF 1
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93x47 (SOLDER PIN)
CASE 180BS
ISSUE O
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15232H
PIM42 93X47 (SOLDER PIN)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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