NXH600B100H4Q2F2S1G_技术文档

DATA SHEET

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Si/SiC Hybrid Module –

EliteSiC, 3 Channel Flying

Capacitor Boost 1000 V,

200ꢀAꢀIGBT, 1200 V, 60 A SiC

Diode, Q2 Package

NXH600B100H4Q2F2S1G,

SNXH600B100H4Q2F2S1G-S

PIM56, 93x47 (SOLDER PIN)

CASE 180BK

The NXH600B100H4Q2S1G is a Si/SiC Hybrid three channel

flying capacitor boost module. Each channel contains two 1000 V,

200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains

an NTC thermistor.

MARKING DIAGRAM

NXH600B100H4Q2F2S1G

ATYYWW

Features

• 3−channel Boost in Q2 Package

• Extremely Efficient Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Module Design Offers High Power Density

• Low Inductive Layout

NXH600B100H4Q2F2S1G = Specific Device Code

G

= Pb−Free Package

AT

= Assembly & Test Site Code

YYWW = Year and Work Week Code

Typical Applications

• Solar Inverters

• Uninterruptible Power Supplies Systems

PIN CONNECTIONS

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 4 of this data sheet.

Figure 1. NXH600B100H4Q2F2S1G Schematic Diagram

1

Publication Order Number:

NXH600B100H4Q2F2S1G/D

March, 2023 − Rev. 1

NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) (T = 25°C unless otherwise noted)

J

Rating

IGBT (T11, T12, T21, T22, T31, T32)

Symbol

Value

Unit

Collector−Emitter Voltage

V

1000

V

CES

Gate−Emitter Voltage

Positive Transient Gate−Emitter Voltage (t

V

20

30

GE

= 5 ms, D < 0.10)

pulse

Continuous Collector Current @ T = 80°C

I

173

519

422

−40

175

A

C

Pulsed Peak Collector Current @ T = 80°C (T = 175°C)

I

C(Pulse)

C

J

Maximum Power Dissipation (T = 175°C)

P

W

°C

J

tot

Minimum Junction Temperature

T

JMIN

Maximum Junction Temperature (Note 2)

T

JMAX

IGBT INVERSE DIODE (D11, D12, D21, D22, D31, D32)

Peak Repetitive Reverse Voltage

V

1200

66

V

A

RRM

Continuous Forward Current @ T = 80°C

I

F

C

Repetitive Peak Forward Current (T = 175°C)

I

98

A

J

FRM

Maximum Power Dissipation (T = 175°C)

P

101

−40

175

W

°C

J

tot

Minimum Junction Temperature

T

JMIN

Maximum Junction Temperature

T

JMAX

SILICON CARBIDE SCHOTTKY DIODE (D13, D14, D23, D24, D33, D34)

Peak Repetitive Reverse Voltage

V

1200

63

V

A

RRM

Continuous Forward Current @ T = 80°C

I

F

C

Repetitive Peak Forward Current (T = 175°C)

I

189

204

−40

175

A

J

FRM

Maximum Power Dissipation (T = 175°C)

P

W

°C

J

tot

Minimum Junction Temperature

Maximum Junction Temperature

START−UP DIODE (D15, D25, D35)

Peak Repetitive Reverse Voltage

T

JMIN

T

JMAX

V

1200

35

V

A

RRM

Continuous Forward Current @ T = 80°C

I

F

C

Repetitive Peak Forward Current (T = 175°C)

I

105

84

A

J

FRM

Maximum Power Dissipation (T = 175°C)

P

W

°C

J

tot

Minimum Junction Temperature

Maximum Junction Temperature

T

−40

175

JMIN

T

JMAX

THERMAL AND INSULATION PROPERTIES

THERMAL PROPERTIES

Operating Temperature under Switching Condition

Storage Temperature range

T

−40 to 150

−40 to 125

°C

VJOP

T

stg

INSULATION PROPERTIES

Isolation test voltage, t = 1 sec, 50 Hz

Creepage distance

V

is

4000

12.7

V

RMS

mm

Comparative tracking index

CTI

>600

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

2. Qualification at 175°C per discrete TO247.

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

J

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

IGBT (T11, T12, T21, T22, T31, T32) CHARACTERISTICS

Collector−Emitter Breakdown Voltage

Collector−Emitter Cutoff Current

V

= 0 V, I = 2 mA

V

(BR)CES

1000

–

1150

–

−

20

2.3

–

V

mA

V

GE

C

V

= 0 V, V = 1000 V

I

CES

GE

CE

Collector−Emitter Saturation Voltage

V

= 15 V, I = 200 A, T = 25°C

V

–

1.88

GE

C

J

CE(sat)

V

GE

= 15 V, I = 200 A, T = 150°C

–

2.4

C

J

Gate−Emitter Threshold Voltage

Gate Leakage Current

Internal Gate Resistor

Turn−on Delay Time

V

= V , I = 200 mA

4

4.98

6

V

nA

W

GE

CE

C

GE(TH)

V

GE

=

20 V, V = 0 V

I

GES

–

350

−

CE

r

–

3

G

T = 25°C

t

–

119.75

30.08

614.57

26.85

860

–

ns

J

d(on)

V

CE

= 600 V, I = 50 A

C

Rise Time

t

r

–

V

= −9 V, 15 V, R

= 9 W, R

= 25 W

GE

Gon

Goff

Turn−off Delay Time

t

–

d(off)

Fall Time

t

f

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

E

–

mJ

on

off

E

–

1500

119.97

32.09

706.72

40.22

1120

2750

12687.7

418.0

73.9

–

T = 125°C

t

–

ns

J

d(on)

V

CE

= 600 V, I = 50 A

C

Rise Time

t

r

–

V

GE

= −9 V, 15 V, R

= 9 W, R

= 25 W

Gon

Goff

Turn−off Delay Time

–

d(off)

Fall Time

t

f

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Input Capacitance

E

on

E

off

–

mJ

–

V

= 20 V, V = 0 V, f = 1 MHz

C

–

pF

CE

GE

ies

oes

Output Capacitance

C

–

Reverse Transfer Capacitance

Total Gate Charge

C

–

res

V

CE

= 600 V, I = 40 A, V = −15 V ~ 15 V

Q

g

–

680

–

nC

C

GE

Thermal Resistance − chip−to−heatsink

Thermal Resistance − chip−to−case

Thermal grease,

Thickness = 2.1 Mil 2%, l = 2.87 W/mK

R

–

0.420

0.225

–

K/W

thJH

thJC

–

IGBT INVERSE DIODE (D11, D12, D21, D22, D31, D32) CHARACTERISTICS

Diode Forward Voltage

I = 50 A, T = 25°C

V

F

−

–

1.15

1.08

1.5

–

V

F

J

I = 50 A, T = 175°C

F

J

Thermal Resistance − chip−to−heatsink

Thermal Resistance − chip−to−case

Thermal grease,

Thickness = 2.1 Mil 2%, l = 2.87 W/mK

R

0.956

0.800

–

K/W

thJH

thJC

R

–

DIODES (D13, D14, D23, D24, D33, D34) CHARACTERISTICS

Diode Forward Voltage

I = 60 A, T = 25°C

V

F

–

1.51

2.14

2.2

–

V

F

J

I = 60 A, T = 175°C

F

J

Reverse Recovery Time

T = 25°C

t

rr

28.14

304.98

18.8

–

ns

nC

A

J

V

CE

= 600 V, I = 50 A

C

Reverse Recovery Charge

Q

rr

RRM

–

V

GE

= −9 V, 15 V, R

= 9 W

Gon

Peak Reverse Recovery Current

Peak Rate of Fall of Recovery Current

Reverse Recovery Energy

I

–

di/dt

1389.12

105.08

–

A/ms

mJ

E

rr

–

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

J

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

DIODES (D13, D14, D23, D24, D33, D34) CHARACTERISTICS

Reverse Recovery Time

T = 125°C

t

–

45.73

583.95

24.08

1236

–

ns

nC

J

rr

V

= 600 V, I = 50 A

CE

C

Reverse Recovery Charge

Q

rr

RRM

V

= −9 V, 15 V, R

= 9 W

GE

Gon

Peak Reverse Recovery Current

Peak Rate of Fall of Recovery Current

Reverse Recovery Energy

I

A

di/dt

A/ms

mJ

E

216.04

0.599

0.466

rr

Thermal Resistance − chip−to−heatsink

Thermal Resistance − chip−to−case

Thermal grease,

Thickness = 2.1 Mil 2%, l = 2.87 W/mK

R

K/W

thJH

thJC

R

START−UP DIODE (D15, D25, D35) CHARACTERISTICS

Diode Forward Voltage

I = 30 A, T = 25°C

V

F

–

2.25

1.8

3.2

–

V

F

J

I = 30 A, T = 175°C

F

J

Thermal Resistance − chip−to−heatsink

Thermal Resistance − chip−to−case

THERMISTOR CHARACTERISTICS

Nominal resistance

Thermal grease,

Thickness = 2.1 Mil 2%, l = 2.87 W/mK

R

1.309

1.133

–

K/W

thJH

thJC

R

–

T = 25°C

R

–

5

492.2

–

1

–

kW

W

25

Nominal resistance

T = 100°C

R

100

Deviation of R25

DR/R

−1

–

%

Power dissipation

P

D

5

mW

mW/K

K

Power dissipation constant

B−value

–

1.3

3430

B(25/85), tolerance 1%

–

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Orderable Part Number

Marking

Package

Shipping

NXH600B100H4Q2F2S1G

Q2BOOST, Case 180BK

(Pb−Free and Halide−Free Solder Pins)

12 Units / Blister Tray

SNXH600B100H4Q2F2S1G−S

Q2BOOST, Case 180BK

(Pb−Free and Halide−Free Solder Pins)

12 Units / Blister Tray

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − T11||D13, T12||D14, T21||D23, T22||D24, T31||D33, T32||D34

Figure 2. Typical Output Characteristics

Figure 4. Transfer Characteristics

Figure 6. FBSOA

Figure 3. Typical Output Characteristics

Figure 5. Saturation Voltage Characteristic

Figure 7. RBSOA

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − T11||D13, T12||D14, T21||D23, T22||D24, T31||D33, T32||D34 (CONTINUED)

Figure 8. Gate Voltage vs. Gate Charge

Figure 9. Capacitance

Figure 10. Diode Forward Characteristics

Figure 11. Temperature vs. NTC Value

Figure 12. Transient Thermal Impedance (IGBT Rthjc)

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − T11||D13, T12||D14, T21||D23, T22||D24, T31||D33, T32||D34 (CONTINUED)

Figure 13. Transient Thermal Impedance (DIODE

Rthjc)

TYPICAL CHARACTERISTICS − D11, D12, D21, D22, D31, D32 DIODE

Figure 14. Diode Forward Characteristics

Figure 15. Transient Thermal Impedance (Rthjc)

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − D15, D25, D35 DIODE

Figure 16. Diode Forward Characteristics

Figure 17. Transient Thermal Impedance (Rthjc)

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − T11||D13, T12||D14, T21||D23, T22||D24, T31||D33, T32||D34

Figure 18. Typical Turn On Loss vs. I_C

Figure 19. Typical Turn Off Loss vs. I_C

Figure 20. Typical Turn On Loss vs. R_g

Figure 21. Typical Turn Off Loss vs. R_g

Figure 22. Typical Turn−Off Switching Time

Figure 23. Typical Turn−On Switching Time

vs. I_C

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − T11||D13, T12||D14, T21||D23, T22||D24, T31||D33, T32||D34 (CONTINUED)

Figure 24. Typical Turn−Off Switching Time

Figure 25. Typical Turn−On Switching Time

vs. R_g

Figure 26. Typical Reverse Recovery Energy

Loss vs. I_C

Figure 27. Typical Reverse Recovery Energy

Loss vs. R_g

Figure 28. Typical Reverse Recovery Time

vs. I_C

Figure 29. Typical Reverse Recovery Charge

vs. I_C

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NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G−S

TYPICAL CHARACTERISTICS − T11||D13, T12||D14, T21||D23, T22||D24, T31||D33, T32||D34 (CONTINUED)

Figure 30. Typical Reverse Recovery Current

vs. I_C

Figure 31. Typical di/dt vs. I_C

Figure 32. Typical Reverse Recovery Time

vs. R_g

Figure 33. Typical Reverse Recovery Charge

vs. R_g

Figure 34. Typical Reverse Recovery Peak

Current vs. R_g

Figure 35. Typical di/dt vs. R_g

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

PIM56, 93x47 (SOLDER PIN)

CASE 180BK

ISSUE O

DATE 19 MAY 2022

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON45176H

PIM56, 93x47 (SOLDER PIN)

PAGE 1 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

PIM56, 93x47 (SOLDER PIN)

CASE 180BK

ISSUE O

DATE 19 MAY 2022

GENERIC

MARKING DIAGRAM*

XXXXXXXXXXXXXXXXXXXXXX

ATYYWW

FRONTSIDE MARKING

2D

CODE

BACKSIDE MARKING

XXXXX = Specific Device Code

AT

= Assembly & Test Site Code

YYWW = Year and Work Week Code

*This information is generic. Please refer to device data

sheet for actual part marking. Pb−Free indicator, “G” or

microdot “G”, may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON45176H

PIM56, 93x47 (SOLDER PIN)

PAGE 2 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

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


型号：	NXH600B100H4Q2F2S1G
厂家：	ONSEMI
描述：	Si/SiC Hybrid Modules, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode 双极性晶体管
文件：	总14页 (文件大小：1768K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NXH600B100H4Q2F2S1G [ONSEMI]

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