SBAT54CWT1G [ONSEMI]

30 V 共阴极肖特基二极管;
SBAT54CWT1G
型号: SBAT54CWT1G
厂家: ONSEMI    ONSEMI
描述:

30 V 共阴极肖特基二极管

光电二极管 整流二极管 肖特基二极管
文件: 总4页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT54CWT1  
Preferred Device  
Dual Series Schottky  
Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
30 VOLT  
DUAL COMMON CATHODE  
SCHOTTKY BARRIER  
DIODES  
Features  
Extremely Fast Switching Speed  
Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc  
Pb−Free Package is Available  
F
1
2
ANODE  
ANODE  
3
CATHODE  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
MARKING  
DIAGRAM  
Reverse Voltage  
V
R
30  
Volts  
Forward Power Dissipation  
P
F
3
@ T = 25°C  
200  
1.6  
mW  
mW/°C  
A
3
Derate above 25°C  
Forward Current (DC)  
Junction Temperature  
Storage Temperature Range  
SOT−323  
CASE 419  
STYLE 5  
5C....D  
I
F
200 Max  
125 Max  
mA  
°C  
1
T
J
2
T
stg  
55 to +150  
°C  
1
2
5C  
D
= Specific Device Code  
= Date Code  
Maximum ratings are those values beyond which device damage can oc-  
cur. Maximum ratings applied to the device are individual stress limit val-  
ues (not normal operating conditions) and are not valid simultaneously.  
If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Device  
BAT54CWT1  
Package  
Shipping  
SOT−323  
3000/Tape & Reel  
3000/Tape & Reel  
BAT54CWT1G SOT−323  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
Publication Order Number:  
1
May, 2004 − Rev. 4  
BAT54CWT1/D  
BAT54CWT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Reverse Breakdown Voltage (I = 10 mA)  
Symbol  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
V
(BR)R  
R
Total Capacitance (V = 1.0 V, f = 1.0 MHz)  
C
7.6  
0.5  
0.22  
0.41  
0.52  
10  
R
T
Reverse Leakage (V = 25 V)  
I
R
2.0  
0.24  
0.5  
0.8  
5.0  
mAdc  
Vdc  
Vdc  
Vdc  
ns  
R
Forward Voltage (I = 0.1 mAdc)  
V
F
V
F
V
F
F
Forward Voltage (I = 30 mAdc)  
F
Forward Voltage (I = 100 mAdc)  
F
Reverse Recovery Time  
t
rr  
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)  
R(REC)  
F
R
Forward Voltage (I = 1.0 mAdc)  
V
V
0.29  
0.35  
0.32  
0.40  
200  
300  
600  
Vdc  
Vdc  
F
F
Forward Voltage (I = 10 mAdc)  
F
F
Forward Current (DC)  
I
F
mAdc  
mAdc  
mAdc  
Repetitive Peak Forward Current  
Non−Repetitive Peak Forward Current (t < 1.0 s)  
I
I
FRM  
FSM  
http://onsemi.com  
2
BAT54CWT1  
820 W  
+10 V  
2 k  
0.1 mF  
I
F
t
r
t
p
T
I
F
100 mH  
t
T
10%  
90%  
rr  
0.1 mF  
DUT  
50 W OUTPUT  
PULSE  
GENERATOR  
50 W INPUT  
SAMPLING  
OSCILLOSCOPE  
i
= 1 mA  
R(REC)  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; measured  
INPUT SIGNAL  
F
R
at i  
= 1 mA)  
R(REC)  
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 1. Recovery Time Equivalent Test Circuit  
100  
1000  
T = 150°C  
A
125°C  
85°C  
100  
10  
T = 125°C  
A
10  
1.0  
0.1  
1.0  
150°C  
T = 85°C  
A
0.1  
0.01  
25°C  
40°C  
55°C  
T = 25°C  
A
0.001  
15  
25  
30  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
5
10  
20  
V , FORWARD VOLTAGE (VOLTS)  
F
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Forward Voltage  
Figure 3. Leakage Current  
14  
12  
10  
8
6
4
2
0
0
5
10  
15  
20  
25  
30  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Total Capacitance  
http://onsemi.com  
3
BAT54CWT1  
PACKAGE DIMENSIONS  
SOT−323 (SC−70)  
CASE 419−04  
ISSUE L  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
3
MIN  
1.80  
1.15  
0.80  
0.30  
1.20  
0.00  
0.10  
MAX  
2.20  
1.35  
1.00  
0.40  
1.40  
0.10  
0.25  
A
B
C
D
G
H
J
0.071  
0.045  
0.032  
0.012  
0.047  
0.000  
0.004  
0.087  
0.053  
0.040  
0.016  
0.055  
0.004  
0.010  
B
S
1
2
D
G
K
L
0.017 REF  
0.026 BSC  
0.028 REF  
0.425 REF  
0.650 BSC  
0.700 REF  
N
S
0.079  
0.095  
2.00  
2.40  
J
N
STYLE 5:  
PIN 1. ANODE  
2. ANODE  
3. CATHODE  
C
0.05 (0.002)  
K
H
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BAT54CWT1/D  

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