SZSMS24T1G [ONSEMI]
ESD /浪涌保护器;
| 型号： | SZSMS24T1G |
| 厂家： | 
ONSEMI |
| 描述： | ESD /浪涌保护器 二极管 瞬态抑制器 |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMS05T1 Series
SC-74 Quad Transient
Voltage Suppressor
for ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems and
other applications. This quad device provides superior surge
protection over current quad Zener MMQA series by providing up to
350 watts peak power.
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SC–74 QUAD TRANSIENT
VOLTAGE SUPPRESSOR
350 WATTS PEAK POWER
5 VOLTS
Features:
• SC-74 Package Allows Four Separate Unidirectional Configurations
• Peak Power – 350 Watts, 8 x 20 mS
• ESD Rating of Class N (Exceeding 25 kV) per the
Human Body Model
PIN ASSIGNMENT
3
2
1
4
1
2
3
6
5
4
5
• ESD Rating:
6
IEC 61000–4–2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000–4–4 (EFT) 40 Amps (5/50 ns)
IEC 61000–4–5 (lightning) 23 Amps (8/20 ms)
SC–74
CASE 318F
STYLE 1
• UL Flammability Rating of 94V–0
PIN 1. CATHODE
2. ANODE
MARKING
DIAGRAM
Typical Applications:
• Hand Held Portable Applications such as Cell Phones, Pagers,
3. CATHODE
4. CATHODE
5. ANODE
Notebooks and Notebook Computers
d
6. CATHODE
xxx
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
xxx = Device Code
Peak Power Dissipation
P
pk
350
W
d
= Date Code
8 x 20 mS @ T = 25°C (Note 1)
A
Total Power Dissipation on FR–5 Board
P
D
225
mW
@ T = 25°C (Note 2)
A
ORDERING INFORMATION
Derate Above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
Junction–to–Ambient
R
556
q
JA
Device
Package
Shipping
SMS05T1
SMS12T1
SC–74
SC–74
3000/Tape & Reel
3000/Tape & Reel
Junction and Storage
Temperature Range
T , T
–55 to
+150
°C
°C
J
stg
Lead Solder Temperature –
Maximum 10 Seconds Duration
T
L
260
SMS15T1
SMS24T1
SC–74
SC–74
3000/Tape & Reel
3000/Tape & Reel
1. Non–repetitive current pulse 8 x 20 mS exponential decay waveform
2. FR–5 = 1.0 x 0.75 x 0.62 in.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 5
SMS05T1/D
SMS05T1 Series
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
C
V V
BR RWM
V
Working Peak Reverse Voltage
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
Maximum Temperature Coefficient of V
Forward Current
I
PP
BR
BR
I
F
Uni–Directional
V
F
Forward Voltage @ I
F
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS – UNIDIRECTIONAL
Max
Reverse
Leakage
Max Reverse Voltage
(Clamping Voltage)
At Specified Reverse
Max Reverse Voltage
(Clamping Voltage)
At Specified Reverse
Capacitance
@ 0 Volt Bias,
1 MHz
Breakdown
Voltage
Current
Surge Current (I
)
Surge Current (I
)
RSM
RSM
I
V
RSM
I
V
RSM
RSM
RSM
(8x20 ms) (8x20 ms)
(8x20 ms) (8x20 ms)
V
BR
(V)
I
T
I
R
V
R
(pF)
Device
Marking
Min Nom Max (mA) (mA) (V)
(A)
5.0
5.0
5.0
5.0
(V)
9.8
(A)
23
15
12
8
(V)
Min
250
80
Max
400
150
125
75
Device
SMS05T1
SMS12T1
SMS15T1
SMS24T1
5V0
12V
15V
24V
6.0
–
–
–
–
7.2
15
1.0
1.0
1.0
1.0
20
1.0
1.0
1.0
5.0
12
15
24
15.5
23.0
29.0
44.0
13.3
16.7
26.7
19.0
24.0
40.0
18.5
32
60
40
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2
SMS05T1 Series
10
1
110
100
90
80
70
60
50
40
30
20
0.1
10
0
0.01
0.1
1
10
100
1000
0
0
0
25
50
75
100
125
150
t , PULSE DURATION (ms)
T , AMBIENT TEMPERATURE (°C)
p
A
Figure 1. Non–Repetitive Peak Pulse Power
versus Pulse Time
Figure 2. Power Derating Curve
110
100
90
50
45
40
35
30
25
20
15
10
WAVEFORM
WAVEFORM
PARAMETERS
t = 8 ms
PARAMETERS
t = 8 ms
SMS24
r
r
80
70
60
50
40
30
20
t = 20 ms
d
t = 20 ms
d
c–t
SMS15
t = I /2
d
SMS12
PP
SMS05
5
0
10
0
0
5
10
15
t, TIME (ms)
20
25
30
5
10
15
20
25
I
PP
, PEAK PULSE CURRENT (A)
Figure 3. Pulse Waveform
Figure 4. Clamping Voltage versus
Peak Pulse Current
300
250
200
150
100
5
4
3
2
PULSE
WAVEFORM
t = 8 ms
T = 25°C
J
r
t = 20 ms
d
8 X 20 ms SURGE
SMS05
SMS12
5
1
0
50
0
SMS15
SMS24
0
5
10
15
20
10
15
20
25
I , FORWARD CURRENT (A)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. 8 x 20 ms VF
Figure 6. Typical Capacitance (SMS05 Series)
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3
SMS05T1 Series
Transient Voltage Suppressors – Surface Mount
350 Watts Peak Power
SC–74 (SC–59ML)
CASE 318F–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
A
L
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318F-01 AND -02 OBSOLETE. NEW STANDARD
6
5
2
4
318F-03.
B
S
1
INCHES
DIM MIN MAX
MILLIMETERS
3
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
0
MAX
3.10
1.70
1.10
0.50
1.05
0.100
0.26
0.60
1.65
10
A
B
C
D
G
H
J
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
D
G
M
K
L
J
C
0.05 (0.002)
M
S
0
10
0.0985 0.1181
_
_
_
_
2.50
3.00
K
H
STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
ON Semiconductor is a trademark and
is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
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SMS05T1/D
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