2SD2266P [PANASONIC]
暂无描述;
| 型号： | 2SD2266P |
| 厂家： | 
PANASONIC |
| 描述： | 暂无描述 晶体 开关 晶体管 功率双极晶体管 |
| 文件： | 总3页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
Unit: mm
5.0±0.1
Features
High-speed switching
■
10.0±0.2
1.0
●
90°
●
Satisfactory linearity of foward current transfer ratio hFE
●
Allowing supply with the radial taping
1.2±0.1
C1.0
2.25±0.2
Absolute Maximum Ratings (T =25˚C)
■
C
0.65±0.1
1.05±0.1
0.35±0.1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.55±0.1
0.55±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
80
60
V
C1.0
7
V
1
2 3
8
A
2.5±0.2
2.5±0.2
IC
4
A
1:Base
2:Collector
3:Emitter
MT4 Type Package
Base current
IB
1
A
Collector power TC=25°C
15
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 80V, IE = 0
VEB = 6V, IC = 0
C = 25mA, IB = 0
IEBO
Collector to emitter voltage
VCEO
I
60
70
20
*
hFE1
VCE = 4V, IC = 1A
320
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 4V, IC = 4A
VCE = 4V, IC = 4A
2.0
1.5
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 4A, IB = 0.4A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 12V, IC = 0.2A, f = 10MHz
80
0.3
1.0
0.2
MHz
µs
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
O
70 to 150
120 to 250 160 to 320
1
Power Transistors
2SD2266
PC — Ta
IC — VCE
IC — VBE
20
4
3
2
1
0
6
5
4
3
2
1
0
VCE=4V
TC=25˚C
IB=40mA
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
25˚C
100˚C
35mA
TC=–25˚C
15
10
5
30mA
25mA
(1)
20mA
15mA
10mA
5mA
(2)
0
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
7
8
0
1
2
3
4
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
104
1000
100
10
IC/IB=10
VCE=4V
VCE=12V
f=10MHz
TC=25˚C
30
10
103
102
10
1
TC=100˚C
3
1
TC=100˚C
–25˚C
25˚C
0.3
0.1
25˚C
–25˚C
1
0.03
0.01
0.1
0.01 0.03
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
10000
1000
100
10
100
10
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
VCC=50V
IE=0
f=1MHz
TC=25˚C
Non repetitive pulse
TC=25˚C
)
30
10
ICP
IC
TC=25˚C
t=1ms
3
1
tstg
DC
1
ton
0.3
0.1
0.1
0.01
tf
0.03
0.01
1
1
3
10
30
100 300 1000
0
1
2
3
4
5
6
7
8
1
3
10
30
100 300 1000
( )
V
( )
A
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SD2266
Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
相关型号：
2SD2266Q
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN
PANASONIC
2SD2273P
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN
PANASONIC
2SD2273Q
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN
PANASONIC
2SD2274P
Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN
PANASONIC
2SD2274Q
Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN
PANASONIC
2SD2274S
Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明