CNB1001Q [PANASONIC]
Diffuse Photoelectric Sensor, 1mm Max, 0.02-0.05mA, 1-Channel, Rectangular, Surface Mount, 2.70 X 3.40 MM, 1.50 MM HEIGHT, ULTRAMINIATURE, PLASTIC, PRSMG104-001, 4 PIN;
| 型号： | CNB1001Q |
| 厂家： | 
PANASONIC |
| 描述： | Diffuse Photoelectric Sensor, 1mm Max, 0.02-0.05mA, 1-Channel, Rectangular, Surface Mount, 2.70 X 3.40 MM, 1.50 MM HEIGHT, ULTRAMINIATURE, PLASTIC, PRSMG104-001, 4 PIN |
| 文件： | 总3页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective photosensors
Non-contact point SW, object sensing
Unit: mm
3.4
1.8
±.15
■ Overview
±.±5+±.1
-
±.±5
1
3
C±.5
CNB1001 and CNB1002 are a small, thin SMD-compatible
reflective photosensor consisting of a high efficiency GaAs infra-
red light emitting diode which is integrated with a high sensitivity
Si phototransistor in a single resin package.
Chip
center
2
4
±.85
4-±.7
4-±.5
1.5
■ Features
• Reflow-compatible reflective photosensor
• Ultraminiature, thin type: 2.7 × 3.4 mm (height: 1.5 mm)
• Visible light cutoff resin is used
■ Absolute Maximum Ratings Ta = 25°C
Color of rank
1: Emitter
2: Collector
3: Anode
Parameter
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *
Symbol Rating
Unit
V
VR
IF
6
4: Cathode
50
75
35
mA
mW
V
PRSMG104-001 Package
(Note) Tolerance unless otherwise specified is 0.2
1
PD
Output (Photo Collector-emitter voltage VCEO
transistor)
(Base open)
Emitter-collector voltage VECO
(Base open)
6
V
Collector current
Collector power dissipation *
IC
20
75
mA
mW
°C
Note) 1: Input power derating ratio is
*
2
PC
1.0 mW/°C at Ta ≥ 25°C.
Temperature Operating ambient temperature Topr
Storage temperature
−25 to +85
2: Output power derating ratio is
*
Tstg −40 to +100
°C
1.0 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VF
Conditions
Min
Typ
Max
1.4
Unit
V
Input
Forward voltage
IF = 20 mA
VR = 3 V
1.2
characteristics Reverse current
IR
10
µA
nA
Output
Collector-emitter cutoff current ICEO
VCE = 20 V
100
characteristics
(Base open)
1, 3
Transfer
Collector current *
IC
ID
VCC = 2 V, IF = 4 mA, RL = 100 Ω, d = 1 mm
VCC = 2 V, IF = 4 mA, RL = 100 Ω
23
160
100
0.4
µA
nA
V
characteristics Dark current
Collector-emitter saturation voltage VCE(sat) IF = 20 mA, IC = 0.1 mA
2
Rise time *
tr
tf
VCC = 5 V, IC = 0.1 mA
RL = 1 000 Ω
30
40
µs
µs
2
*
Fall time
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3: Rank classification
*
3. 1: Output current measurement
*
2: Switching time
*
method
measurement circuit
Rank
IC (µA)
Color
Q
R
S
tr : Rise time
tf : Fall time
Glass plate
Evaporated Al
d = 1 mm
Glass plate
23 to 50
Orange
41 to 90
White
74 to 160
Light blue
Evaporated Al
d = 1 mm
Sig. in
Sig. out
90%
10%
RL
IF
IC
VCC
Sig.
out
Sig. in
50 Ω
VCC
RL
tr
tf
Publication date: April 2004
SHG00044BED
1
CNB1001, CNB1002
IF , IC Ta
IF VF
IC IF
60
60
50
40
30
20
10
0
800
600
400
200
0
Ta = 25°C
VCC = 5 V
Ta = 25°C
RL = 100 Ω
d = 1 mm
IF
50
40
30
IC
20
10
0
−25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
0
8
16
24
Forward voltage VF (V)
Forward current IF (mA)
Ambient temperature Ta (°C)
VF Ta
IC VCE
∆IC Ta
1.6
600
500
400
300
200
100
0
160
120
80
40
0
d = 1 mm
Ta = 25°C
VCC = 2 V
IF = 4 mA
IF = 50 mA
RL = 100 Ω
1.2
0.8
0.4
0
IF = 20 mA
10 mA
1 mA
15 mA
10 mA
8 mA
6 mA
4 mA
2 mA
−40
0
40
80
−40
0
40
80
0
2
4
6
8
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
ICEO Ta
tr , tf IC
∆IC d
10
1
103
102
10
100
VCE = 10 V
VCE = 2 V
Ta = 25°C
IF = 4 mA
VCC = 5 V
Ta = 25°C
: tr
: tf
80
60
40
20
0
RL = 2 kΩ
d
10 −1
10 −2
10 −3
10 −4
1 kΩ
100 Ω
1
10 −1
10 −2
10 −1
1
10
0
2
4
6
8
10
−40
0
40
80
Ambient temperature Ta (°C)
Collector current IC (mA)
Distance d (mm)
SHG00044BED
2
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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