MA3SE02 [PANASONIC]
Schottky Barrier Diodes (SBD); 肖特基势垒二极管（ SBD ）
| 型号： | MA3SE02 |
| 厂家： | 
PANASONIC |
| 描述： | Schottky Barrier Diodes (SBD) |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3SE02
Silicon epitaxial planar type
Unit: mm
0.28 0.0ꢀ
For cellular phone
+0.0ꢀ
0.12
–0.02
3
ꢀ Features
•
•
•
•
High-frequency wave detection is possible
Low forward voltage VF
Small terminal capacitance Ct
SS-Mini type 3-pin package
1
2
0.28 0.0ꢀ
(0.ꢀ1)
(0.ꢀ1)
(0.80) (0.80)
+0.0ꢀ
0.60
–0.03
+0.0ꢀ
1.60
–0.03
3°
ꢀ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC) Single
Seriesꢀ
Symbol
VR
Rating
Unit
V
20
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
VRM
IF
20
V
35
mA
25
100
EIAJ : SC-89
SSMini3-F2 Package
Peak forward current
Single
IFM
mA
Marking Symbol: M6B
Seriesꢀ
70
Junction temperature
Storage temperature
Tj
125
°C
°C
Internal Connection
Tstg
−55 to +125
3
1
2
ꢀ Absolute Maximum Ratings Ta = 25°C 3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
Conditions
Min
Typ
Max
200
0.40
1.0
Unit
nA
V
IR
VF1
VF2
Ct
VR = 15 V
IF = 1 mA
IF = 35 mA
Terminal capacitance
VR = 0 V, f = 1 MHz
IF = 5 mA
1.2
pF
Forword dynamic resistance
rf
9
Ω
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Publication date: August 2001
SKH00067AED
1
MA3SE02
IR VR
Ct VR
103
102
10
1.2
1.0
Ta = 25°C
0.8
0.6
0.4
0.2
0
Ta = 125°C
1
10−1
10−2
75°C
25°C
10−3
0
5
10
15
20
25
0
5
10
15
20
25
( )
V
( )
V
Reverse voltage VR
Reverse voltage VR
SKH00067AED
2
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2001 MAR
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