MA3U649 [PANASONIC]

Silicon planar type (cathode common); 硅平面型(阴极常见)
MA3U649
型号: MA3U649
厂家: PANASONIC    PANASONIC
描述:

Silicon planar type (cathode common)
硅平面型(阴极常见)

文件: 总2页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Fast Recovery Diodes (FRD)  
MA3U649  
Silicon planar type (cathode common)  
Unit : mm  
6.5 0.1  
5.3 0.1  
4.35 0.1  
For high-frequency rectification  
2.3 0.1  
0.5 0.1  
I Features  
Small U-type package for surface mounting  
Low-loss type with fast reverse recovery time trr  
Cathode common dual type  
1.0 0.1  
0.1 0.05  
0.93 0.1  
0.5 0.1  
0.75 0.1  
2.3 0.1  
4.6 0.1  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VRRM  
Rating  
200  
Unit  
V
Repetitive peak reverse voltage  
Non-repetitive peak reverse  
surge voltage  
VRSM  
200  
V
1
2
3
1 : Anode  
2 : Cathode  
(Common)  
3 : Anode  
U-Type Package  
1
Average forward current*  
IF(AV)  
IFSM  
5
A
A
Non-repetitive peak forward  
40  
2
surge current*  
Junction temperature  
Storage temperature  
Tj  
40 to +150  
40 to +150  
°C  
°C  
Tstg  
1
Note) 1. * : TC = 25°C  
2
*
: Half sine-wave; 10 ms/cycle  
I Electrical Characteristics Ta = 25°C  
Parameter  
Symbol  
IRRM1  
IRRM2  
VF  
Conditions  
Min  
Typ  
Max  
Unit  
µA  
Repetitive peak reverse current  
VRRM = 200 V, TC = 25°C  
VRRM = 200 V, Tj = 150°C  
IF = 2.5 A, TC = 25°C  
IF = 1 A, IR = 1 A  
20  
2
mA  
V
Forward voltage (DC)  
0.98  
30  
2
Reverse recovery time*  
trr  
ns  
1
Thermal resistance*  
Rth(j-c)  
Direct current (between junction and case)  
12.5  
°C/W  
Note) 1. Rated input/output frequency: 200 MHz  
1
2. * : TC = 25°C  
2
*
: trr measuring circuit  
50 Ω  
50 Ω  
trr  
IF  
D.U.T  
0.1 × IR  
IR  
5.5 Ω  
1
MA3U649  
Fast Recovery Diodes (FRD)  
IF VF  
IR VR  
VF Ta  
4
10  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta = 150°C  
3
10  
Ta = 150°C  
–20°C  
1
100°C  
25°C  
100°C  
2
1  
10  
10  
10  
10  
10  
10  
IF = 5 A  
2  
3  
4  
5  
10  
2.5 A  
1 A  
25°C  
1
1  
10  
2  
10  
0
50  
100 150 200 250 300  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
40  
0
40  
80  
120 160 200  
(
)
V
Reverse voltage VR  
(
)
V
Forward voltage VF  
(°C)  
Ambient temperature Ta  
IR Ta  
Ct VR  
30  
20  
10  
0
10 000  
1 000  
100  
10  
f = 1 MHz  
Ta = 25°C  
VR = 200 V  
100 V  
10 V  
1
0.1  
40  
0
50  
100 150 200 250 300  
0
40  
80  
120 160 200  
(
)
V
(°C)  
Reverse voltage VR  
Ambient temperature Ta  
2

相关型号:

MA3U650

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon,
PANASONIC

MA3U653

Rectifier Diode, 1 Phase, 2 Element, 5A, 300V V(RRM), Silicon,
PANASONIC

MA3U654

Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon,
PANASONIC

MA3U689

Silicon planar type
PANASONIC

MA3U690

Silicon planar type
PANASONIC

MA3U749

Silicon epitaxial planar type (cathode common)
PANASONIC

MA3U755

Silicon epitaxial planar type (cathode common)
PANASONIC

MA3U760

Silicon epitaxial planar type (cathode common)
PANASONIC

MA3UD06

Mixer Diode, Very High Frequency, Silicon, U-TYPE PACKAGE-3
PANASONIC

MA3V175D

Silicon epitaxial planar type
PANASONIC

MA3V175E

Silicon epitaxial planar type
PANASONIC

MA3V176D

Silicon epitaxial planar type
PANASONIC