MA3U690 [PANASONIC]
Silicon planar type; 硅平面型
| 型号： | MA3U690 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon planar type |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Fast Recovery Diodes (FRD)
MA3U690
Silicon planar type
Unit : mm
For high-frequency rectification
6.5 0.1
5.3 0.1
4.35 0.1
2.3 0.1
0.5 0.1
I Features
•
•
•
Small U-type package for surface mounting
Low-loss type with fast reverse recovery time trr
Single type
1.0 0.1
0.1 0.05
0.93 0.1
0.5 0.1
0.75 0.1
I Absolute Maximum Ratings Ta = 25°C
2.3 0.1
4.6 0.1
Parameter
Symbol
VRRM
Rating
200
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
VRSM
200
V
1 : N.C.
1
2
3
2 : Cathode
3 : Anode
U-Type Package
1
Average forward current*
IF(AV)
IFSM
5
A
A
Non-repetitive peak forward
40
2
surge current*
Junction temperature
Storage temperature
Tj
−40 to +150
−40 to +150
°C
°C
Tstg
1
2
Note)
*
*
: TC = 25°C
: Half sine-wave; 10 ms/cycle
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
IRRM1
IRRM2
VF
Conditions
Min
Typ
Max
Unit
µA
Repetitive peak reverse current
VRRM = 200 V, TC = 25°C
VRRM = 200 V, Tj = 150°C
IF = 5 A, TC = 25°C
20
2
mA
V
Forward voltage (DC)
0.98
45
2
Reverse recovery time*
trr
IF = 1 A, IR = 1 A
ns
1
Thermal resistance*
Rth(j-c)
Direct current (between junction and case)
12.5
°C/W
Note) 1. Rated input/output frequency: 200 MHz
1
2. * : TC = 25°C
2
*
: trr measuring circuit
50 Ω
50 Ω
trr
IF
D.U.T
0.1 × IR
IR
5.5 Ω
1
MA3U690
Fast Recovery Diodes (FRD)
IF VF
VF Ta
IR VR
10
10 000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100°C 25°C
Ta = 150°C
Ta = 150°C
−20°C
1
0.1
1 000
100°C
100
IF = 5 A
2.5 A
1 A
0.01
10
25°C
0.001
0.000 1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
40
80
120 160 200 240
−40
0
40
80
120 160 200
(
)
( )
Reverse voltage VR V
Forward voltage VF
V
(
)
Ambient temperature Ta °C
IR Ta
Ct VR
300
200
100
0
10 000
1 000
100
10
VR = 200 V
100 V
f = 1 MHz
Ta = 25°C
10 V
1
0.1
−40
0
50
100 150 200 250 300
0
40
80
120 160 200
( )
V
(
)
Reverse voltage VR
Ambient temperature Ta °C
2
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