NP043A1 [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;
| 型号： | NP043A1 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：643K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For digital circuits
0.12+0.03
0.02
6
5
4
Features
0 to 0.02
Two elements incorporated into one package (Each transistor is separated)
SSSMini type package, reduction of the mounting area and assembly cost
Maximum package height (0.4 mm) contributes to develop thinner equipments
1
2
3
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Basic Part Number
UNR32A1 + UNR31A1
Absolute Maximum Ratings T= 25C
Parameter
Symbol
Rating
Unit
1: Emitter (Tr1)
4: Emitter (Tr2)
5: Base (Tr2)
Collector-base voltage
(Emitter open)
VCBO
50
V
2: Base (Tr1)
3: Collector (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Collector-emitter voltage
(Base open)
Tr1
VCEO
IC
50
80
V
mA
V
Marking Symbol: 7X
Collector current
Internal Connection
Collector-base voltage
(Emitter open)
VCBO
50
(C1) (B2) (E2)
6
5
4
Collector-emitter voltage
(Base open)
R1
Tr2
R2
10 kΩ
VCEO
V
50
10 kΩ
Tr1
Tr2
R2
10 kΩ
R1
10 kΩ
Collector current
IC
PT
Tj
mA
mW
C
80
125
Total power dissipation
Junction temperature
Storage temperature
1
2
3
(E1) (B1) (C2)
125
Overall
T
stg
–55 to +125
C
Note) : Measuring on substrate at 17 mm 10 mm 1 mm
Publication date: June 2005
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NP043A1
Electrical Characteristics T= 25C±3C
Tr1
Parameter
Symbol
VCBO I= 10 µA, I= 0
VCEO IC = 2 mA, IB = 0
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
50
V
ICBO
ICEO
IEBO
hFE
VCB = 50 V, I= 0
VCE = 50 V, IB = 0
VEB = 6 V, I= 0
0.1
0.5
0.5
µA
µA
mA
VCE = 10 V, I= 5 mA
35
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
VOH
VOL
R1
VCC = 5 V, VB = 0.5 V, R= 1 kΩ
4.9
V
Output voltage low-level
VCC = 5 V, VB = 2.5 V, R= 1 kΩ
0.2
+30%
1.2
V
Input resistance
10
1.0
150
kΩ
30%
0.8
Resistance ratio
R1 / R2
fT
Transition frequency
VCB = 10 V, I2 mA, f = 200 MHz
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
Tr2
Parameter
Symbol
Conditions
Min
50
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
VCBO I10 µA, I= 0
VCEO I2 mA, IB = 0
V
ICBO
ICEO
IEBO
hFE
VCB 50 V, I= 0
V50 V, IB = 0
VEB 6 V, IC = 0
0.1
0.5
0.5
µA
µA
mA
V10 V, IC 5 mA
35
VCE(sat) I10 mA, IB 0.3 mA
V
0.25
VOH
VOL
R1
V5 V, VB 0.5 V, R= 1 kΩ
V5 V, VB 2.5 V, R= 1 kΩ
V
4.9
Output voltage low-level
V
0.2
+30%
1.2
Input resistance
10
1.0
80
kΩ
30%
0.8
Resistance ratio
R1 / R2
fT
Transition frequency
VCB 10 V, IE = 1 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
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NP043A1
Common characteristics chart
PT T
a
120
80
40
0
0
40
80
120
(
)
Ambient temperature Ta °C
Characteristics charts of Tr1
IC V
VCE(sat) I
hFE IC
10
1
80
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Ta = 25°C
IC /IB = 10
V
CE = 10 V
200
60
40
Ta = 85°C
25°C
0.3 mA
0.2 mA
−25°C
100
0.1
Ta = 85°C
−25°C
20
0
25°C
0.1 mA
0
0.01
1
10
100
0
4
8
12
1
10
100
(
)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC mA
Cob VCB
IO V
VIN IO
10
100
10
1
10
VO = 5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
VO = 0.2 V
Ta = 25°C
0.1
1
0.01
1
0.1
0
10
20
30
40
0
1
2
1
10
100
( )
V
Collector-base voltage VCB
Input voltage VIN (V)
Output current IO (mA)
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NP043A1
Characteristics charts of Tr2
IC V
VCE(sat) I
hFE IC
−10
−1
IC /IB = 10
Ta = 25°C
−80
V
CE = −10 V
IB = −1.0 mA
−0.9 mA
160
120
80
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−60
−40
−0.4 mA
−0.3 mA
Ta = 85°C
25°C
−25°C
Ta = 85°C
− 0.1
−0.2 mA
25°C
−25°C
−20
40
0
−0.1 mA
0
− 0.01
0
−4
−8
−12
−1
−10
−100
− 0.1
−1
−10
−100
(
)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC mA
Cob VCB
IO V
VIN IO
10
−100
−10
−1
−10
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
−1
VO = − 0.2 V
Ta = 25°C
1
− 0.1
− 0.1
0
−10
−20
−30
−40
0
−1
−2
−3
− 0.1
−1
−10
−100
( )
V
Collector-base voltage VCB
Input voltage VIN (V)
Output current IO (mA)
4
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd. Industrial Co., Ltd.
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