XN01401G [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, MINI5-G2, 5 PIN;
| 型号： | XN01401G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, MINI5-G2, 5 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN01401G
Silicon PNP epitaxial planar type
For general amplification
■ Package
■ Features
•
• Two elements incorporated into one package
(Emitter-coupled transistors)
Code
Mini5-G2
•
• Reduction of the mounting area and assembly cost by onhalf
Pin Name
1: C(Tr1) 4: Emitter
2: Cr2) 5: Base (Tr1)
ase )
■ Basic Part Number
• 2SB0709A × 2
■ Marking Symbol: 5V
■ Absolute Maximum Ratings Ta = 25°
Parameter
ymbol
Rating
−60
Unit
V
■ Internal Connection
Collector-base voltage (Emitter open) VBO
Collector-emitter voltage (Base VCEO
Emitter-base voltage (Cotor on) EBO
−50
V
(B2) (E) (B1)
3
4
5
−
V
Collector current
IC
ICP
−100
−200
300
mA
mA
mW
°C
Tr2
Tr1
Peak collecor curnt
Total power dispatio
Junction tempratur
orage teme
150
2
(C2)
1
(C1)
Ts
−55 to +150
°C
■ Electrracteristics Ta = 25°C 3°C
r
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-bas(Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
−100
460
µA
µA
ICEO
hFE
160
h
FE ratio *
hFE(Small/ VCE = −10 V, IC = −2 mA
Large)
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.3 − 0.5
V
MHz
pF
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Publication date: March 2009
SJJ00443AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XN01401
PT Ta
IC VCE
IC IB
−60
−50
−40
−30
−20
−10
0
−60
−50
−40
−30
−20
0
500
400
300
200
100
0
Ta = 25°C
IB = − 300 µA
VCE = −5 V
Ta = 25°C
−250 µA
−200 µA
−150 µA
µA
−50 µA
0
4
−8
−12
−16
−100
−200
−300
−400
0
40
80
120
160
(
Collecto-emitter voltage VCE
(
)
Base current IB µA
(
)
Ambient temperature Ta °C
IB VBE
IC VBE
VCE(sat) IC
−400
−350
−300
−250
−200
−150
−00
50
−10
−1
−240
−200
−16
−120
−40
0
IC / IB = 10
VCE = −5
Ta =
CE = −5 V
25°C
−25°C
Ta = 7°C
Ta = 75°C
−25°C
25°C
−10−1
−10−2
−10−3
0
−0.
−1.2
−1
−10
−102
−103
−0.4
−1.
0
−0.4
−0.8
−1.2
−1.6
−2.0
V
)
(
)
Bvoltae VBE
Colletor current IC mA
(
V
)
Baseemitter voltage VBE
IC
f IE
Cob VCB
600
500
400
160
140
120
100
80
8
7
6
5
4
3
2
1
0
VCE = –10 V
VCB = −10 V
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 25°C
Ta = 75°C
300 25°C
−25°C
60
200
40
100
20
0
−1
0
−102
−10
−102
−103
10−1
1
10
102
−1
−10
(
)
Collector current IC mA
Emitter current IE (mA)
(
V
)
Collector-base voltage VCB
SJJ00443AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
XN01401
NF IE
NF IE
h parameter IE
6
5
4
3
2
1
20
VCB = −5 V
VCB = −5 V
VCE = −5 V
f = 270 Hz
Ta = 25°C
Rg = 50 kΩ
Ta = 25°C
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
18
16
14
12
10
8
hfe
102
10
hoe (µS)
f = 100 Hz
1 kHz
1
6
hie (kΩ)
4
2
hre (× 10−4
)
0
0
10−2
10−1
1
10
10−1
10
1
10
Emter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
h parameter VCE
IE = 2
f = 2
Ta =
hfe
102
hoe (µS)
10
hre (×
h(kΩ)
1
−
102
(
V
)
Coller volge VCE
SJJ00443AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XN01401
Mini5-G2
Unit: mm
2.90 +−00..0250
1.9 0.1
3 +−00..0025
(0.95)
(0.95)
3
4
5
2
1
0.30 +−00..150
8°
SJJ00443AED
4
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions stisfy your requirements.
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defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which
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