XN01501G [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G2, 5 PIN;
| 型号： | XN01501G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G2, 5 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN01501G
Silicon NPN epitaxial planar type
For general amplification
■ Package
■ Features
•
• Two elements incorporated into one package
(Emitter-coupled transistors)
Code
Mini5-G2
•
• Reduction of the mounting area and assembly cost by onhalf
Pin Name
1: C(Tr1) 4: Emitter
2: Cr2) 5: Base (Tr1)
ase )
■ Basic Part Number
• 2SD0601A × 2
■ Absolute Maximum Ratings Ta = 5°C
■ Marking Symbol: 5R
Parameter
Symbl
g
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base oVCO
Emitter-base voltage (Collector VEBO
60
50
7
■ Internal Connection
V
V
(B2) (E) (B1)
3
4
5
Collector current
IC
ICP
PT
10
00
mA
mA
mW
°C
Peak collector curren
Total power dissipon
Junction temperure
Storage empture
Tr2
Tr1
300
150
55 to +150
°C
2
(C2)
1
(C1)
■ Electrracteristics Ta = 25°C 3°C
r
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-bas(Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
100
460
µA
µA
ICEO
hFE
160
h
FE ratio *
hFE(Small/ VCE = 10 V, IC = 2 mA
Large)
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
150
3.5
0.3
V
MHz
pF
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Publication date: March 2009
SJJ00444AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XN01501G
PT Ta
IC VCE
IC IB
240
60
500
400
300
200
100
0
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 160 µA
200
160
120
80
50
40
30
20
10
0
140 µA
12µA
100 A
0 µA
µA
40 µA
0
20 µA
0.2
0.4
6
0.8
1.0
0
4
6
8
1
0
40
80
120
160
)
Base current IB (mA
(
ollectoemitter voltage VCE
(
)
Ambient temperature Ta °C
IB VBE
IC VBE
VCE(sat) IC
102
10
1.2
1.0
0.8
0.6
0.4
0.2
0
240
200
16
120
IC / IB = 10
CE = 10 V
VCE =
Ta =
25°C
1
Ta = 75°C
−25°C
25°C
10−1
T= 75°C
40
−25°C
10−2
10−1
0
1
10
102
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
V
)
(
)
Bvoltae VBE
Colletor current IC mA
(
V
)
Base-emitter voltage VBE
IC
f IE
NV IC
600
500
400
300
200
100
0
300
240
180
120
60
240
200
160
120
80
VCE = 10 V
VCB = 10 V
Ta = 25°C
VCE = 10 V
GV = 80 dB
Function = FLAT
Ta = 25°C
Ta = 75°C
25°C
Rg = 100 kΩ
−25°C
22 kΩ
4.7 kΩ
40
0
0
10
10−1
1
10
102
−10−1
–1
–10
–102
102
Collector current IC µA
103
(
)
(
)
Emitter current IE mA
(
)
Collector current IC mA
SJJ00444AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
XN01501G
Mini5-G2
Unit: mm
2.90 +−00..0250
1.9 0.1
3 +−00..0025
(0.95)
(0.5)
3
4
5
2
1
0.30 +−00.150
8°
SJJ00444AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability requied, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subjet to change wit notice for modification and/or im-
provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions stisfy your requirements.
(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirent etc.). Especiall, plee be ceful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which
damp-proof packinis reqired, stisfy the condtions, sch as shelf life and the elapsed time since first opening the packages.
(7) This book may e not eprinted or reprodhethr wholly or partially, without the prior written permission of our company.
2008080
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