XN01457|XN1457 [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XN01457|XN1457 |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN01457
Silicon PNP epitaxial planar type
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
+0.10
0.16
–0.06
For general amplification
3
2
4
5
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
1
• Reduction of the mounting area and assembly cost by one half
+0.10
–0.05
0.30
10˚
■ Basic Part Number
• 2SB1693 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−40
Unit
V
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
4: Emitter
5: Base (Tr1)
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
−20
V
EIAJ: SC-74A
Mini5-G1 Package
−15
V
Marking Symbol: 4Y
Collector current
IC
ICP
PT
− 0.5
−1
A
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
A
Internal Connection
300
mW
°C
°C
3
Tr2
2
4
5
Tj
150
Tstg
−55 to +150
Tr1
1
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
hFE1
Conditions
Min
−40
−20
−15
160
100
0.50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
V
1
Forward current transfer ratio *
VCE = −2 V, IC = −100 mA
VCE = −2 V, IC = −500 mA
560
hFE2
1, 2
hFE ratio *
hFE(Small VCE = −2 V, IC = −100 mA
/Large)
0.99
1
Collector-emitter saturation voltage *
VCE(sat) IC = −100 mA, IB = −10 mA
−60
−300
mV
IC = − 0.5 A, IB = −25 mA
−210 −500
Transition frequency
fT
VCB = −5 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
170
16
MHz
pF
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Ratio between 2 elements
*
Publication date: December 2003
SJJ00260BED
1
XN01457
PT Ta
IC VCE
IC IB
−400
−300
−200
−100
0
−300
−200
−100
0
IB = −1.0 mA
− 0.9 mA
Ta = 25°C
VCE = −2 V
300
200
100
0
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
0
0
40
80
120
160
0
−2
−4
−6
−8
−10 −12
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
( )
Collector-emitter voltage VCE V
(
)
Ambient temperature Ta °C
(
)
Base current IB mA
IC VBE
VCE(sat) IC
hFE IC
−10−1
−10−2
−10−3
−120
−80
−40
0
IC / IB = 10
Ta = 75°C
VCE
= −2 V
VCE = −2 V
25°C
400
300
200
100
0
25°C
Ta = 75°C
−25°C
Ta = 75°C
−25°C
25°C
−25°C
− 0.4
− 0.8
−1.2
−1
−10
−100
−1
−10
−100
(
)
V
Base-emitter voltage VBE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
100
10
1
f = 1 MHz
Ta = 25°C
−10
−20
−
30
−40
Collector-base voltage VCB (V)
SJJ00260BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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