XN06111 [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | XN06111 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN6111
Silicon PNP epitaxial planer transistor
Unit: mm
2.8+–00..32
For switching/digital circuits
0.65±0.15
1.5+–00..0255
0.65±0.15
1
2
6
Features
■
5
4
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
3
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1111 × 2 elements
■
0.1 to 0.3
●
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Rating
of
element
–50
V
Marking Symbol: 6Z
Internal Connection
–100
mA
mW
˚C
PT
300
Overall Junction temperature
Storage temperature
Tj
150
Tr1
6
1
2
3
Tstg
–55 to +150
˚C
5
4
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
–50
–50
typ
max
Unit
V
Collector to base voltage
IC = –10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
V
– 0.1
– 0.5
– 0.5
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
VCE = –10V, IC = –5mA
35
hFE (small/large)*1 VCE = –10V, IC = –5mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
V
80
10
MHz
kΩ
R1
–30%
0.8
+30%
1.2
Resistance ratio
R1/R2
1.0
*1 Ratio between 2 elements
1
Composite Transistors
XN6111
PT — Ta
500
400
300
200
100
0
0
40
80
120
160
)
(
Ambient temperature Ta ˚C
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
40
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–0.9mA
IB=–1.0mA
–30
–10
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
2
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