XN06113G [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN;


型号：	XN06113G
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN 开关光电二极管晶体管
文件：	总4页 (文件大小：207K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

This product complies with the RoHS Directive (EU 2002/95/EC).

Composite Transistors

XN06113G

Silicon PNP epitaxial planar type

For switching/digital circuits

■ Package

■ Features

•

Code

Mini6-G3

Pin Name

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

•

1: Collector (Tr1) 4: Base (Tr2)

■ Basic Part Number

2: Base (Tr1)

5: Emitter (Tr2)

•

UNR2113 × 2

3: Collector (Tr2) 6: Emitter (Tr1)

■ Marking Symbol: 6W

■ Internal Connection

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−50

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

(B2)

(E2)

(E1)

Collector current

I_C

P_T

T_j

−100

°C

Total power dissipation

Junction temperature

Storage temperature

300

47 kΩ

150

47 kΩ

T_stg

−55 to +150

°C

Tr1

47 kΩ

Tr2

(C2)

(B1)

(C1)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= −10 µA, I_E= 0

−50

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

V_CE= −10 V, I_C= −5 mA

− 0.1

− 0.5

− 0.1

µA



I_CEO

I_EBO

h_FE

_FERatio ^*

h_FE(SmallV_CE= −10 V, I_C= −5 mA

/Large)

0.50

0.99



Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

V_CE(sat)I_C= −10 mA, I_B= − 0.3 mA

− 0.25

V_OH

V_OL

R₁

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ

−4.9

V_CC= −5 V, V_B= −3.5 V, R_L= 1 kΩ

− 0.2

+30%

1.2

−30%

1.0

kΩ



Resistance ratio

R₁/ R₂

f_T

0.8

Transition frequency

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Publication date: March 2009

SJJ00499AED

This product complies with the RoHS Directive (EU 2002/95/EC).

XN06113G

P_T T_a

I_C V_CE

V_CE(sat) I_C

−160

500

400

300

200

100

−100

I_C/ I_B= 10

I_B= −1.0 mA

−0.9 mA

T_a= 25°C

−0.8 mA

−0.7 mA

−0.6 mA

−120

−80

−40

−10

−1

−0.5 mA

−0.4 mA

−0.3 mA

−0.2 mA

T_a= 75°C

25°C

−0.1

−25°C

− 0.1 mA

−

0.01

−0.1

120

160

−2

−4

−6

−8

−10 −12

−1

−10

−100

(

)

( )

Collector-emitter voltage V_CEV

Ambient temperature T_a°C

(

)

Collector current I_CmA

h_FE I_C

C_ob V_CB

I_O V_IN

−10⁴

−10³

−10²

−10

−1

400

300

200

100

V_O= −5 V

T_a= 25°C

f = 1 MHz

I_E= 0

V_CE= −10 V

T_a= 75°C

25°C

T_a= 25°C

−25°C

−0.1

−1

−10

−100

−0.4 −0.6 −0.8

−1.0

−1.2

−1.4

−1

−10

−100

−1000

Collector-base voltage V_CB(V)

( )

Input voltage V_IN

(

)

Collector current I_CmA

V_IN I_O

−100

V_O= − 0.2 V

T_a= 25°C

−10

−1

−0.1

−0.01

−0.1

−1

−10

−100

(

)

Output current I_OmA

SJJ00499AED

This product complies with the RoHS Directive (EU 2002/95/EC).

XN06113G

Mini6-G3

Unit: mm

2.90 ^+0.20

−0.05

0.13 ^+0.05

−0.02

1.9 0.1

(0.95)

0.30 ^+0.10

0.50 ^+0.10

−0.05

−

0.05

8°

SJJ00499AED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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20080805

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