QPM1002SR [QORVO]
8.5 â 10.5 GHz GaN T/R Module;
| 型号： | QPM1002SR |
| 厂家： | 
Qorvo |
| 描述： | 8.5 â 10.5 GHz GaN T/R Module |
| 文件： | 总23页 (文件大小：1350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Product Description
The QPM1002 is a Gallium Nitride MMIC front-end
module (FEM) designed for X-Band radar applications
within the 8.5 – 10.5 GHz range. The MMIC combines a
T/R switch, low-noise amplifier, and a power amplifier.
The receive path offers 25 dB gain with low noise figure
of 2.2 dB. The transmit path offers a small signal gain of
33 dB, it can deliver 3 W of saturated power with a PAE
of 32%, with a 25 dB of large signal gain. The FEM is
robust up to 2 W of input power into the ANT port
eliminating the need for a limiter.
The QPM1002 is fabricated on Qorvo's QGaN25 0.25um
GaN-on-SiC process. The 5 x 5 mm QFN surface mount
package with over-mold encapsulant, coupled with high
thermal conductivity die-attach process, allows the
QPM1002 to perform well in a high temperature
environment. Its compact size supports tight lattice
spacing requirements needed for X-Band phased array
radar applications.
Functional Block Diagram
Product Features
• Frequency Range: 8.5ꢀ–ꢀ10.5ꢀGHz
• RX Noise Figure: 2.2 dB
• RX Small Signal Gain: 25 dB
• RX Saturated Power: 16 dBm
• RX Output TOI: 22dBm
• TX Small Signal Gain: 33 dB
• TX Large Signal Gain: 25 dB
• TX Saturated Power: 35 dBm, Pulsed
• TX PAE: 32% @ 35 dBm Pout, Pulsed
• TX Output TOI @ 6 dBm Pin / tone: 38.5 dBm
• TX Harmonics Suppression: 35 dBc
• Package Dimensions: 5 x 5 x 0.85 mm
Performance is typical at room temperature.
Please reference electrical specification table and data
plots for more details.
Ordering Information
Part No.
QPM1002SR
QPM1002
Description
Applications
QPM1002 Tape and Reel, Qty 100
QPM1002 Shipping Tray, Qty 250
QPM1002 Tape and Reel, Qty 750
QPM1002 Evaluation Board
• Electronics Warfare (EW)
• Commercial and Military Radar
• Communications
QPM1002TR7
QPM1002EVB1
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 1 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Normal Operating Conditions
Parameter
RX Drain Voltage (RXVD)
Value
10 V
1, 3
RX Drain Quiescent Current (RXIDQ)
RX Gate Control (RXVG) 2
20 mA
-2.5 V
TX Drain Voltage (TXVD)
25 V
TX Drain Quiescent Current (TXIDQ)
TX Gate Voltage (TXVG) 2
110 mA
-2.5 V
Control Voltage (TXSW / RXSW)
Operating Temperature Range
Transmit: -28V / 0 V; Receive: 0V / -28V
−40 to 95ꢀ°C
1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended
operating conditions.
2. Gate voltage shown are typical, can be adjusted to set required drain current.
3. Drain of LNA is switched off by internal switch when in transmit mode. In receive mode, the PA should be biased off.
Absolute Maximum Ratings
Parameter
Drain Voltage (TXVD and RXVD)
Value
32 V
Drain Current (TXID)
600 mA
60 mA
Drain Current (RXID)
Gate Voltage (RXVG, TXVG)
Gate Current (RXIG)
0 to −5 V
10 mA
Gate Current (TXIG)
20 mA
Switch Control Voltage (TXSW, RXSW)
Switch Control Current
0 to -50 V
20 mA
RF Input Power (All RF ports, 85 °C)
Channel Temperature, TCH
Mounting Temperature (30 seconds)
Storage Temperature
33 dBm
225 °C
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 2 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Electrical Specifications, Receive
Test conditions unless otherwise noted: RXVD = 10 V, RXIDQ = 20 mA, RXSW = - 28 V, TXSW = 0 V, Transmit channel biased off.
Data de-embedded to device reference plane, 25 °C
Parameter
Frequency
Min
8.5
23
Typical
Max
10.5
28.5
Units
GHz
dB
Small Signal Gain
25
2.2
13
12
16
22
0
Noise Figure
dB
Input Return Loss
dB
Output Return Loss
dB
Saturated Output Power, CW Mode
Output TOI @ -31 dBm Pin / Tone, CW Mode
Gate Leakage Current (RXVG leak, RXVD = 10 V, RXVG = -3.7 V)
dBm
dBm
mA
-0.44
1
Switch Settling Time, Rising Edge
20
nS
2
Switch Settling Time, Falling Edge
100
nS
Gain Temperature Coefficient
−0.04
dB/°C
1
2
From 50% trigger signal to 90 % of RF on (Trigger signal to switch driver to DUT).
From 50% trigger signal to 10 % of RF off (Trigger signal to switch driver to DUT).
Electrical Specifications, Transmit
Test conditions unless otherwise noted: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = - 28 V
Data de-embedded to device reference plane, 25 °C
Parameter
Frequency
Min
8.5
Typical
Max
10.5
Units
GHz
dB
Small Signal Gain
33
25
Large Signal Gain
dB
Input Return Loss
15
dB
Output Return Loss
15
dB
1
33
32
35
dBm
dBm
dBm
%
dBm
dBc
V
Saturated Output Power @ 8.5 GHz to 9.5 GHz
1
35
Saturated Output Power @ 10 GHz
1
31.5
35
Saturated Output Power @ 10.5 GHz
PAE at Saturated Power (@ 10 dBm Pin) 1
Output TOI @ 6 dBm Pin / tone, CW Mode
Harmonic Suppression, CW Mode
32
38.5
35
Power Detection Output (VREF – VDET)
0
0.3
Gate Leakage Current (TXVG leak, TXVD = 10 V, TXVG = -3.7 V)
- 2.37
0
mA
2
Switch Settling Time, Rising Edge
40
60
nS
3
Switch Settling Time, Falling Edge
nS
Gain Temperature Coefficient
−0.05
dB/°C
1. Power and PAE measured with DC drain pulsed, PW = 100 uS, Duty Cycle = 10%.
2. From 50% trigger signal to 90 % of RF on (Trigger signal to switch driver to DUT)
3. From 50% trigger signal to 10 % of RF off (Trigger signal to switch driver to DUT)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 3 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Small Signal Performance,ꢀReceive
Test Conditions unless otherwise stated: RXVD = 10 V, RXIDQ = 20 mA, RXSW = -28 V, TXSW = 0 V, 25 °C
Transmit channel biased off.
Input Return Loss vs Temp
Gain vs Temp
0
-5
32
30
28
26
24
22
20
18
16
- 40C
+ 25C
+ 95C
-10
-15
-20
-25
-30
- 40C
+ 25C
+ 95C
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Reverse Isolation vs Temp
Output Return Loss vs Temp
-40
-50
-60
-70
-80
0
-5
- 40C
+ 25C
+ 95C
-10
-15
-20
-25
-30
- 40C
+ 25C
+ 95C
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 4 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Small Signal Performance,ꢀReceive
Test Conditions unless otherwise stated: RXVD = 10 V, RXIDQ = 20 mA, RXSW = -28 V, TXSW = 0 V, 25 °C
Transmit channel biased off.
Gain vs Voltage
Gain vs Current
32
30
28
26
24
22
20
18
16
32
30
28
26
24
22
20
18
16
15 mA
20 mA
30 mA
11
8 V
10 V
9
12 V
10
14 V
11
7
7
7
8
12
12
12
7
7
7
8
9
10
12
12
12
Freq (GHz)
Freq (GHz)
Input Return Loss vs Voltage
Input Return Loss vs Current
0
-5
0
-5
8 V
10 V
12 V
14 V
15 mA
20 mA
30 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
8
9
10
11
8
9
10
11
Freq (GHz)
Freq (GHz)
Output Return Loss vs Voltage
Output Return Loss vs Current
0
-5
0
-5
8 V
10 V
12 V
14 V
15 mA
20 mA
30 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
8
9
10
11
8
9
10
11
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 5 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Noise Figure and Isolation
Test Conditions unless otherwise stated: VD = 10 V, RXIDQ = 20 mA, RXSW = -28 V, TXSW = 0 V, 25 °C
Transmit channel biased off.
NF vs Temperature
5.0
4.0
3.0
2.0
1.0
- 40 C
9
+ 25 C
10
+ 95 C
11
0.0
7
8
12
Title
NF vs Voltage
NF vs Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
15 mA
20 mA
30 mA
11
8 V
10 V
12 V
10
14 V
11
7
8
9
10
Freq (GHz)
12
7
8
9
12
Freq (GHz)
Antenna to RX Isolation
TX to RX Isolation
80
75
70
65
60
55
50
45
40
40
35
30
25
20
15
10
TX on, RX off, signal from TX port to RX port
TX on, RX off, signal from Antenna to RX port
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 6 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Power Performance, Receive
Test Conditions unless otherwise stated: VD = 10 V, RXIDQ = 20 mA, RXSW = -28 V, TXSW = 0 V
CW Mode, Pin = 5 dBm, transmit channel biased off., 25 °C
Psat vs Temperature
P1dB vs Temperature
20
18
16
14
12
10
8
20
18
16
14
12
10
8
- 40 C
+ 25 C
+ 95 C
- 40 C
9.0
+ 25 C
+ 95 C
10.0
6
6
8.0
8.5
9.5
10.5
11.0
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Freq (GHz)
Freq (GHz)
Psat vs Voltage
P1dB vs Voltage
20
18
16
14
12
10
8
20
18
16
14
12
10
8
8 V
10 V
12 V
8 V
10 V
12 V
6
6
8.0
8.5
9.0
9.5
Freq (GHz)
10.0
10.5
11.0
8.0
8.5
9.0
9.5
Freq (GHz)
10.0
10.5
11.0
Psat vs Current
P1dB vs Current
20
18
16
14
12
10
8
20
18
16
14
12
10
8
15 mA
20 mA
30 mA
15 mA
20 mA
30 mA
6
6
8.0
8.5
9.0
9.5
10.0
10.5
11.0
8.0
8.5
9.0
9.5
Freq (GHz)
10.0
10.5
11.0
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 7 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Power Sweep, Receive
Test Conditions unless otherwise stated: VD = 10 V, RXIDQ = 20 mA, RXSW = -28 V, TXSW = 0 V
CW Mode, transmit channel biased off, 25 °C
Pout vs Pin
Power Gain vs Pin
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
6
4
2
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pin (dBm)
0
2
4
6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pin (dBm)
0
2
4
6
PAE vs Pin
Ids vs Pin
20
18
16
14
12
10
8
60
50
40
30
20
10
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
6
4
2
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pin (dBm)
0
2
4
6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pin (dBm)
0
2
4
6
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 8 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Linearity, Receive
Test Conditions unless otherwise stated: Transmit channel biased off, 25 °C
VD = 10 V, RXIDQ = 20 mA, RXSW = -28 V, TXSW = 0 V, CW Mode, Tone spacing = 20 MHz.
Output TOI vs Temp
28
26
24
22
20
18
Pin = - 31 dBm / tone
16
- 40 C
+ 25 C
+ 95 C
14
8
8.5
9
9.5
10
10.5
11
Freq (GHz)
Output TOI vs Voltage
Output TOI vs Current
28
26
24
22
20
18
16
14
28
26
24
22
20
18
16
14
Pin = - 31 dBm / tone
Pin = - 31 dBm / tone
15 mA
20 mA
30 mA
10.5
8 V
10 V
12 V
8
8.5
9
9.5
10
10.5
11
8
8.5
9
9.5
10
11
Freq (GHz)
Freq (GHz)
IMD3 vs Pout
IMD5 vs Pout
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
-10 -8
-6
-4
-2
0
2
4
6
8
10 12
-10 -8
-6
-4
-2
0
2
4
6
8
10 12
Pout (dBm / tone)
Pout (dBm / tone)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 9 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Small Signal Performance, Transmit
Test Conditions unless otherwise stated: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V, 25 °C
Input Return Loss vs Temp
Gain vs Temp
0
-5
40
38
35
33
30
28
25
23
20
18
15
- 40C
+ 25C
+ 95C
-10
-15
-20
-25
-30
- 40C
+ 25C
+ 95C
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Reverse Isolation vs Temp
Output Return Loss vs Temp
-40
-45
-50
-55
-60
-65
-70
0
-5
- 40C
+ 25C
+ 95C
- 40C
+ 25C
+ 95C
-10
-15
-20
-25
-30
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 10 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Small Signal Performance, Transmit
Test Conditions unless otherwise stated: VD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V, 25 °C
Gain vs Voltage
Gain vs Current
40
38
36
34
32
30
28
26
24
22
20
40
38
36
34
32
30
28
26
24
22
20
60 mA
110 mA
160 mA
11
22 V
25 V
28 V
7
7
7
8
9
10
11
12
12
12
7
7
7
8
9
10
12
12
12
Freq (GHz)
Freq (GHz)
Input Return Loss vs Voltage
Input Return Loss vs Current
0
-5
0
-5
22 V
25 V
28 V
60 mA
110 mA
160 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
8
9
10
11
8
9
10
11
Freq (GHz)
Freq (GHz)
Output Return Loss vs Voltage
Output Return Loss vs Current
0
-5
0
-5
22 V
25 V
28 V
80 mA
110 mA
160 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
8
9
10
11
8
9
10
11
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 11 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Power Performance, Transmit
Test Conditions unless otherwise stated: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V
Pulse Mode, Pin = 16 dBm, PW = 100 uS, DC = 10%, 25 °C
Power vs Temperature
PAE vs Temperature
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
- 40 C
+ 25 C
+ 95 C
- 40 C
+ 25 C
+ 95 C
8
8
8
9
9
9
10
11
12
12
12
8
8
8
9
9
9
10
11
12
12
12
Freq (GHz)
Freq (GHz)
Power vs Voltage
PAE vs Voltage
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
22 V
25 V
28 V
22 V
25 V
28 V
10
Freq (GHz)
11
10
Freq (GHz)
11
Power vs Current
PAE vs Current
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
60 mA
110 mA
160 mA
60 mA
110 mA
160 mA
10
11
10
11
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 12 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Power Performance, Transmit
Test Conditions unless otherwise stated: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V
Pulse Mode, Pin = 10 dBm, PW = 100 uS, DC = 10%, 25 °C
Power vs Temperature
PAE vs Temperature
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
- 40 C
+ 25 C
+ 95 C
- 40 C
+ 25 C
+ 95 C
8
8
8
9
9
9
10
11
12
12
12
8
9
10
11
12
12
12
Freq (GHz)
Freq (GHz)
Power vs Voltage
PAE vs Voltage
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
22 V
25 V
28 V
22 V
25 V
28 V
10
Freq (GHz)
11
8
9
10
Freq (GHz)
11
Power vs Current
PAE vs Current
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
60 mA
110 mA
160 mA
60 mA
110 mA
160 mA
10
11
8
9
10
11
Freq (GHz)
Freq (GHz)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 13 of 23 -
www.qorvo.com
QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Power Performance, Transmit
Test Conditions unless otherwise stated: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V
Pulse Mode, PW = 100 uS, DC = 10%, 25 °C
Power vs Pin
Power Gain vs Pin
40
38
36
34
32
30
28
26
24
40
35
30
25
20
15
10
8.5 GHz
9.5 GHz
10.5 GHz
12
8.5 GHz
9.5 GHz
10.5 GHz
0
2
4
6
8
10
14
16
16
18
0
2
4
6
8
10
12
14
16
16
18
Pin (dBm)
Pin (dBm)
Ids vs Pin
PAE vs Pin
600
550
500
450
400
350
300
250
200
150
100
38
34
30
26
22
18
14
10
8.5 GHz
4
9.5 GHz
10.5 GHz
12
8.5 GHz
4
9.5 GHz
10.5 GHz
12 14
0
2
6
8
10
14
0
2
6
8
10
Pin (dBm)
Pin (dBm)
Power vs Pin vs Temp
PAE vs Pin vs Temp
40
35
30
25
20
40
35
30
25
20
15
10
5
Freq = 9.5 GHz
Freq = 9.5 GHz
- 40 C
4
+ 25 C
+ 95 C
12 14
- 40 C
4
+ 25 C
+ 95 C
12 14
0
-2
0
2
6
8
10
16
-2
0
2
6
8
10
16
Pout (dBm)
Pout (dBm)
Data Sheet Rev. G, May 2020 | Subject to change without notice
- 14 of 23 -
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Power Performance, Transmit
Test Conditions unless otherwise stated: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V
Pulse Mode, PW = 100 uS, DC = 10%, 25 °C
Detector Diodes are internally biased, Vout = VREF - VDET
Power Gain vs Temperature
Power Gain vs Temperature
28
26
24
22
20
18
16
14
28
26
24
22
20
18
16
14
- 40 C
+ 25 C
+ 95 C
- 40 C
+ 25 C
+ 95 C
Pin = 16 dBm
Pin = 10 dBm
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Power Detector Voltatge vs Freq
Power Detector Voltatge vs Temp
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0.0
8.5 GHz
9.5 GHz
10.5 GHz
- 40 C
+ 25 C
+ 95 C
Freq = 9.5 GHz
30
31
32
33
34
35
36
37
38
30
31
32
33
34
35
36
37
38
Pout (dBm)
Pout (dBm)
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Linearity, Transmit
Test Conditions unless otherwise stated: 25 °C
TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V, CW Mode, Tone Spacing = 20 MHz
Output TOI vs Temp
44
42
40
38
36
Pin = 6 dBm / tone
34
- 40 C
+ 25 C
+ 95 C
10
32
8
8.5
9
9.5
10.5
11
Freq (GHz)
Output TOI vs Voltage
Output TOI vs Current
44
42
40
38
36
34
32
44
42
40
38
36
34
32
Pin = 6 dBm / tone
Pin = 6 dBm / tone
60 mA
110 mA
160 mA
10.5
22 V
25 V
28 V
8
8.5
9
9.5
Freq (GHz)
10
10.5
11
8
8.5
9
9.5
10
11
Freq (GHz)
IMD3 vs Pout
IMD5 vs Pout
0
-10
-20
-30
-40
0
-10
-20
-30
-40
-50
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
22
24
26
28
30
32
22
24
26
28
30
32
Pout (dBm / tone)
Pout (dBm / tone)
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Harmonics, Transmit
Test Conditions unless otherwise stated: TXVD = 25 V, TXIDQ = 110 mA, RXSW = 0V, TXSW = -28 V, CW mode, 25 °C
2nd Harmonic vs. Pout. vs. Temp
2nd Harmonic vs. Pout. vs. Freq
-20
-25
-30
-35
-40
-45
-50
-55
-60
-20
-25
-30
-35
-40
-45
-50
-55
-60
- 40C
+ 25C
30
+ 95C
34
8.5 GHz
26 28
9.5 GHz
30
10.5 GHz
34
22
24
26
28
32
36
38
22
24
32
36
38
Output Power (dBm)
Output Power (dBm)
2nd Harmonic vs. Pout vs. Current
2nd Harmonic vs. Pout. vs. Voltage
-20
-25
-30
-35
-40
-45
-50
-55
-60
-20
-25
-30
-35
-40
-45
-50
-55
-60
22 V
28
25 V
30
28 V
34
60 mA
26
110 mA
30
160 mA
34
22
24
26
32
36
38
22
24
28
32
36
38
Output Power (dBm)
Output Power (dBm)
3rd Harmonic vs. Pout. vs. Temp
3rd Harmonic vs. Pout. vs. Freq
-40
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
- 40C
28
+ 25C
30
+ 95C
34
8.5 GHz
26 28
9.5 GHz
30
10.5 GHz
34
22
24
26
32
36
38
22
24
32
36
38
Output Power (dBm)
Output Power (dBm)
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Application Circuit
Bias-up Procedure
Bias-down Procedure
1. Set TXVD current limit to 600 mA, RXVD current limit to
60mA, gate current limit to 10 mA, switch control current
limit to 10mA
1. Turn off RF signal
2. Set RXVG and TXVG to − 5 V
2. Set RXVG, TXVG to −5 V
3. Set TXSW = - 28 V (or 0 V), RXSW = 0 V (or – 28 V)
3. Set RXVD = 0 V, TXVD = 0 V
for Transmit (Receive)
4. Set RXVD = + 10 V, TXVD = + 25 V (when in receive
mode, should either set TXVG = -5 V, or TXVD off).
4. Turn off drain supply
5. Adjust TXVG, RXVG to achieve required drain
5. Turn off TXSW, RXSW
6. Turn off gate supply
current for TX and RX ( −2.5 V Typical)
6. Apply RF signal
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Mechanical Drawing & Pad Description
Dimensions in mm, package is mold encapsulated with gold plated leads
Part Marking: QPM1002 = Part Number
YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID
Pin Number
Slug
Label
GND
Description
GROUND
4
ANT
Common Port to Antenna
PA Power Detector
PA Power Detector Reference
Transmit Drain Supply
Transmit Gate Control
Transmit Input
7
VDET
VREF
TXVD
TXVG
TXIN
8
9
11
14
17
RXOUT
RXSW
TXSW
RXVD
RXVG
N/C
Receive Output
19
Receive Switch Control
Transmit Switch Control
Receive Drain Supply
Receive Gate Control
No Internal Connections
20
21
22
1, 2, 3, 5, 6, 10, 12, 13, 15, 16, 18, 23, 24
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Evaluation Board and Assembly
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5.
Ref. Des.
Component Value
Manuf. Part Number
C5, C6, C9 - C12 SMT Cap.
C1, C2, C13 - C16 SMT Cap.
R5, R6, R9 - R12 SMT Res.
CAP, 0402 1000pF +/-10% 100V X7R ROHS
CAP, 1206 10uF +/-10% 50V X7R
RES, 0402 1.8 OHM, 5% 1/10W
Various
Various
Various
Various
Various
R7, R8
C7, C8
SMT Res.
SMT Res.
RES, 0402 0 OHM, 5% 1/10 W
CAP, 0402 0.9 pF, 0.05% 200V, Hi-Q
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Thermal and Reliability Information
Parameter
Values
Units
Conditions
TX Channel, Thermal Resistance (θJC) (1,3)
7.1
°C/W
TBASE = 95°C, TXVD = 25 V, TXIDQ = 110 mA
TXID_DRIVE = 482 mA, PIN = 16 dBm,
Freq = 9.5 GHz, PDISS = 8.38 W (PA only, LNA off)
Channel Temperature (TCH)
154.5
11.0
97.2
°C
°C/W
°C
RX Channel, Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
TBASE = 95°C, RXVD = 10 V, RXIDQ = 20 mA
PDISS = 0.2 W (LNA only, PA off)
Notes:
1. Thermal resistance is referenced to package backside
2. Base or ambient temperature is 95 °C
3. Transmit Channel, RF drive is under pulse drain supply condition, PW = 100 uS, DC = 10%, PDISS and ID_DRIVE are peak values.
4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Solderability and Recommended Soldering Temperature Profile
1. Compatible with the latest version of J-STD-020, Lead-free solder, peak reflow temperature 260ꢀ°C.
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Tape and Reel Information
Standard T/R size = 750 pieces on a 7” reel.
Distance Between
Centerline (mm)
Carrier Tape Cover
(mm)
Carrier (mm)
Material
Vendor
Cavity (mm)
Length
direction
(P2)
Width
Direction
(F)
Length Width
Depth
(K0)
Pitch
(P1)
Width
(W)
Width
(W)
Vendor P/N
(A0)
(B0)
Advantek ML0505-A
5.25
5.25
1.1
8.0
2.00
5.50
12.0
9.20
Data Sheet Rev. G, May 2020 | Subject to change without notice
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QPM1002
8.5 –ꢀ10.5ꢀGHz GaN T/R Module
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
0Z
ESDAꢁ/ꢁJEDEC JS-001-2012
ESDAꢁ/ꢁJEDEC JS-002-2014
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) C3
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
3
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, romine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. G, May 2020 | Subject to change without notice
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