QPM1017S2 [QORVO]
5.7 â 7 GHz 100 W GaN Power Amplifier Module;
| 型号： | QPM1017S2 |
| 厂家： | 
Qorvo |
| 描述： | 5.7 â 7 GHz 100 W GaN Power Amplifier Module |
| 文件： | 总23页 (文件大小：1078K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Product Overview
Qorvo’s QPM1017 is a packaged, high-power C-band
amplifier module, fabricated on Qorvo’s production 0.15 um
GaN on SiC process (QGaN15). Covering 5.7ꢀ–ꢀ7 GHz, the
QPM1017 provides 100 W of saturated output power with
18 dB of large signal gain while achieving > 35% power-
added efficiency.
For satellite communications
applications, QPM1017 provides 40 W linear power with 25
dBc third order intermodulation distortion products.
The QPM1017 is packaged in a 10-lead 19.05 x 19.05 mm
bolt-down package with a Cu base for superior thermal
management. It can support a variety of operating
conditions to best support system requirements.
Key Features
To simplify system integration, QPM1017 is fully matched
to 50 ohms. Input port is DC grounded for improved ESD
performance, output port is AC coupled with integrated DC
blocking capacitor.
Frequency Range: 5.7 ꢀ– 7 GHz
PSAT (PIN = 32 dBm): 50 dBm
PAE (PIN = 32 dBm): > 35 %
Power Gain (PIN = 32 dBm): 18 dB
IM3 (POUT/Tone = 43 dBm): -25 dBc
Small Signal Gain: > 24 dB
The QPM1017 is ideal for supporting communications and
radar applications in both commercial and military markets
Bias: VD = +24 V, IDQ = 3.4 A, VG = -2.5 V typ.
Dimensions: 19.05 x 19.05 x 4.5 mm
RoHS compliant
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
C-Band Radar
1
10
Satellite Communications
2
3
9
8
7
6
4
5
Ordering Information
Part No.
Description
5.7ꢀ–ꢀ7 GHz 100 W GaN Power
Amplifier Module (10 pcs. pack)
Samples (2 pcs. pack)
QPM1017
QPM1017S2
QPM1017EVB Evaluation Board for QPM1017
Data Sheet Rev. A, September 2019 | Subject to change without notice
1 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Min Typ. Max Units
Parameter
Valueꢀ/ꢀRange
29.5 V
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Drain Voltage (VD)
Drain Current, Quiescent (IDQ
+24 +24
3.4
V
A
A
V
-6 V to 0 V
20 A
)
Drain Current, RF (ID_Drive
Gate Voltage Typ. Range (VG)
Gate Current, RF (IG_Drive
Operating Temp. Range (TBASE) −40
Electrical specifications are measured at specified test
)
See chart page 4, 7
Gate Current (IG)
See plot page 18
−2 to -2.9
Pulsed, 360 W
CW, 200 W
)
See chart page 4, 7 mA
+85 ºC
Power Dissipation (PDISS), 85 °C
Input Power (PIN), Pulsed, 50 Ω, VD =
24 V, IDQ = 3.4 A, TBASE = 85 °C,
36 dBm
36 dBm
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Input Power (PIN), Pulsed, 3:1 VSWR,
VD = 24 V, IDQ = 3.4 A , TBASE = 85 °C
Soldering Temperature (30 seconds)
Storage Temperature
260 ºC
-55 to +150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ.
Max
Units
GHz
dBm
%
Operational Frequency Range
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
Large Signal Gain
5.7
7
PIN = +32 dBm, Pulsed
50
35
18
24
18
20
PIN = +32 dBm, Pulsed
PIN = +32 dBm, Pulsed
dB
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
CW
CW
CW
dB
dB
dB
POUT/Tone = 43 dBm; Freq. = 5.7, 6.4, 7 GHz;
3RD Intermodulation Products, IM3
5TH Intermodulation Products, IM5
PSAT Temperature Coefficient
-25
-35
dBc
dBc
Δf = 5 MHz, CW
POUT/Tone = 43 dBm; Freq. = 35 GHz;
Δf = 5 MHz, CW
TDIFF = −40 ºC to +85 ºC; PIN = +26 dBm,
Pulsed
-0.007
-0.065
dBm/ºC
S21 Temperature Coefficient
Gate Leakage, IG
Notes:
TDIFF = −40 ºC to +85 ºC, CW
dB/ºC
mA
VD = +10 V, VG = -4V, no RF
-70.4
0.01
1. Test conditions unless otherwise noted: Pulsed VD = +24 V, IDQ = 3.4 A, VG = -2.5V +/- typical, DC = 20%, PW = 150 us,
TBASEꢁ=ꢁ+25 ºC, Z0ꢁ=ꢁ50ꢁΩ
2. TBASE is back side of QPM1017
Data Sheet Rev. A, September 2019 | Subject to change without notice
2 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ–ꢀLarge Signal
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, PIN = 32 dBm, TBASE = +25 ºC
PAE vs. Freq. vs. TBASE
Output Power vs. Freq. vs. TBASE
52
51
50
49
48
47
46
45
50
48
46
44
42
40
38
36
34
32
30
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
PAE vs. Freq. vs. VD
Output Power vs. Freq. vs. VD
52
51
50
49
48
47
46
45
50
48
46
44
42
40
38
36
34
32
30
20 V
24 V
20 V
24 V
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
PAE vs. Freq. vs. IDQ
Output Power vs. Freq. vs. IDQ
52
51
50
49
48
47
46
45
50
48
46
44
42
40
38
36
34
32
30
2 A
3.4 A
2 A
3.4 A
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Data Sheet Rev. A, September 2019 | Subject to change without notice
3 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, PIN = 32 dBm, TBASE = +25 ºC
Drain Current vs. Freq. vs. TBASE
Average Gate Current vs. Freq. vs. TBASE
20
18
16
14
12
10
8
14
12
10
8
-40 C
+25 C
+85 C
6
4
6
2
4
0
2
-40 C
+25 C
+85 C
0
-2
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Drain Current vs. Freq. vs. VD
Average Gate Current vs. Freq. vs. VD
20
18
16
14
12
10
8
14
12
10
8
20 V
24 V
6
4
6
2
4
0
2
20 V
24 V
0
-2
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Drain Current vs. Freq. vs. IDQ
Average Gate Current vs. Freq. vs. IDQ
20
18
16
14
12
10
8
14
12
10
8
2 A
3.4 A
6
4
6
2
4
0
2
2 A
3.4 A
0
-2
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Data Sheet Rev. A, September 2019 | Subject to change without notice
4 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, PIN = 32 dBm, TBASE = +25 ºC
Output Power vs. Input Power vs. Freq.
TBASE = -40 0C
PAE vs. Input Power vs. Freq.
TBASE = -40 0C
53
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
0
0
0
0
4
8
12
16
20
24
28
32
36
36
36
0
0
0
4
8
12
16
20
24
28
32
36
36
36
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
TBASE = -40 0C
PAE vs. Input Power vs. Freq.
53
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
TBASE = +25 0C
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
0
4
8
12
16
20
24
28
32
4
8
12
16
20
24
28
32
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
TBASE = +85 0C
PAE vs. Input Power vs. Freq.
53
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
TBASE = +85 0C
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
0
4
8
12
16
20
24
28
32
4
8
12
16
20
24
28
32
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
5 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, PIN = 32 dBm, TBASE = +25 ºC
Output Power vs. Input Power vs. VD
PAE vs. Input Power vs. VD
53
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
5.7 GHz
5.7 GHz
20 V
16
24 V
24
20 V
24 V
32
0
0
0
0
4
8
12
20
28
32
36
36
36
0
0
0
4
8
12
16
20
24
28
36
36
36
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. VD
PAE vs. Input Power vs. VD
53
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
5.7 GHz
6.3 GHz
20 V
16
24 V
24
20 V
24 V
32
0
4
8
12
20
28
32
4
8
12
16
20
24
28
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. VD
PAE vs. Input Power vs. VD
53
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
7.0 GHz
7.0 GHz
20 V
16
24 V
24
20 V
24 V
32
0
4
8
12
20
28
32
4
8
12
16
20
24
28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
6 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, PIN = 32 dBm, TBASE = +25 ºC
Drain Current vs. Input Power vs. Freq.
Average Gate Current vs. PIN vs. Freq.
20
18
16
14
12
10
8
14
12
10
8
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
6
4
6
2
4
0
2
0
-2
0
0
0
4
8
12
16
20
24
28
32
36
36
36
0
0
0
4
8
12
16
20
24
28
32
36
36
36
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. TBASE
Average Gate Current vs. PIN vs. TBASE
20
18
16
14
12
10
8
14
12
10
8
6.3 GHz
6.3 GHz
6
-40 C
+25 C
+85 C
4
6
2
4
0
2
-40 C
20
+25 C
24 28
+85 C
32
0
-2
4
8
12
16
4
8
12
16
20
24
28
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Average Gate Current vs. PIN vs. VD
20
18
16
14
12
10
8
14
12
10
8
6.3 GHz
6.3 GHz
6
4
6
2
20 V
16
24 V
4
0
2
20 V
24
24 V
32
0
-2
4
8
12
16
20
28
4
8
12
20
24
28
32
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
7 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, PIN = 32 dBm, TBASE = +25 ºC
Power Gain vs. Input Power vs. Freq.
Power Gain vs. Freq. vs. TBASE
20
19
18
17
16
15
14
13
35
33
31
29
27
25
23
21
19
17
15
13
5.5 GHz
6.0 GHz
6.7 GHz
5.7 GHz
6.3 GHz
7.0 GHz
-40 C
+25 C
+85 C
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
0
0
0
4
8
12
16
20
24
28
32
36
36
36
Input Power (dBm)
Power Gain vs. Freq. vs. VD
Power Gain vs. Input Power vs. VD
20
19
18
17
16
15
14
13
35
33
31
29
27
25
23
21
19
17
15
13
6.3 GHz
20 V
24 V
20 V
16
24 V
24
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
4
8
12
20
28
32
Input Power (dBm)
Power Gain vs. Input Power vs. TBASE
6.3 GHz
Power Gain vs. Freq. vs. IDQ
20
19
18
17
16
15
14
13
35
33
31
29
27
25
23
21
19
17
15
13
2 A
3.4 A
-40 C
12
+25 C
20
+85 C
24 28
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
4
8
16
32
Input Power (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
8 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, Tone Spacing = 5 MHz, TBASE = +25 ºC, with/without 10uF at drain
(C9, C12)
IM3 vs. Output Power vs. TBASE
IM3 vs. Output Power vs. TBASE
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 5.7 GHz
No 10uF
Frequency = 5.7 GHz
With 10uF
-40C
+25C
+85C
-40C
+25C
+85C
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM3 vs. Output Power vs. VD
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 5.7 GHz
No 10uF
Frequency = 5.7 GHz
With 10uF
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Tone Spacing
IM3 vs. Output Power vs. Tone Spacing
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 5.7 GHz
No 10uF
Frequency = 5.7 GHz
With 10uF
5 MHz
10 MHz
20 MHz
5 MHz
10 MHz
20 MHz
50 MHz
100 MHz
200 MHz
50 MHz
100 MHz
200 MHz
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
9 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, Tone Spacing = 5 MHz, TBASE = +25 ºC, with/without 10uF at drain
(C9, C12)
IM3 vs. Output Power vs. TBASE
IM3 vs. Output Power vs. TBASE
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 6.4 GHz
No 10uF
Frequency = 6.4 GHz
With 10uF
-40C
-40C
+25C
+85C
+25C
+85C
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM3 vs. Output Power vs. VD
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 6.4 GHz
No 10uF
Frequency = 6.4 GHz
With 10uF
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Tone Spacing
IM3 vs. Output Power vs. Tone Spacing
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 6.4 GHz
No 10uF
Frequency = 6.4 GHz
With 10uF
5 MHz
10 MHz
20 MHz
5 MHz
10 MHz
20 MHz
50 MHz
100 MHz
200 MHz
50 MHz
100 MHz
200 MHz
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
10 of 23
www.qorvo.com
QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Large Signal
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, Tone Spacing = 5 MHz, TBASE = +25 ºC, with/without 10uF at drain
(C9, C12)
IM3 vs. Output Power vs. TBASE
IM3 vs. Output Power vs. TBASE
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 7.0 GHz
No 10uF
Frequency = 7.0 GHz
With 10uF
-40C
+25C
+85C
-40C
+25C
+85C
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM3 vs. Output Power vs. VD
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 7.0 GHz
No 10uF
Frequency = 7.0 GHz
With 10uF
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Tone Spacing
IM3 vs. Output Power vs. Tone Spacing
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Frequency = 7.0 GHz
No 10uF
Frequency = 7.0 GHz
With 10uF
5 MHz
10 MHz
20 MHz
5 MHz
10 MHz
20 MHz
50 MHz
100 MHz
200 MHz
50 MHz
100 MHz
200 MHz
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
11 of 23
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Linearity
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, Tone Spacing = 5 MHz, TBASE = +25 ºC, with/without 10uF at drain
(C9, C12)
IM5 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 5.7 GHz
No 10uF
Frequency = 5.7 GHz
With 10uF
-40C
+25C
+85C
-40C
+25C
+85C
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM5 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 5.7 GHz
No 10uF
Frequency = 5.7 GHz
With 10uF
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Tone Spacing
IM5 vs. Output Power vs. Tone Spacing
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 5.7 GHz
No 10uF
Frequency = 5.7 GHz
With 10uF
5 MHz
10 MHz
20 MHz
5 MHz
10 MHz
20 MHz
50 MHz
100 MHz
200 MHz
50 MHz
100 MHz
200 MHz
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ– Linearity
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, Tone Spacing = 5 MHz, TBASE = +25 ºC, with/without 10uF at drain
(C9, C12)
IM5 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 6.4 GHz
No 10uF
Frequency = 6.4 GHz
With 10uF
-40C
+25C
+85C
-40C
+25C
+85C
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM5 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 6.4 GHz
No 10uF
Frequency = 6.4 GHz
With 10uF
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Tone Spacing
IM5 vs. Output Power vs. Tone Spacing
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 6.4 GHz
No 10uF
Frequency = 6.4 GHz
With 10uF
5 MHz
10 MHz
20 MHz
5 MHz
10 MHz
20 MHz
50 MHz
100 MHz
200 MHz
50 MHz
100 MHz
200 MHz
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
13 of 23
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, Tone Spacing = 5 MHz, TBASE = +25 ºC, with/without 10uF at drain
(C9, C12)
IM5 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
-15
-20
-25
-30
-35
-40
-45
-50
-55
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 7.0 GHz
No 10uF
Frequency = 7.0 GHz
With 10uF
-40C
+25C
+85C
-40C
+25C
+85C
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM5 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
-15
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 7.0 GHz
No 10uF
Frequency = 7.0 GHz
With 10uF
-20
-25
-30
-35
-40
-45
-50
-55
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Tone Spacing
IM5 vs. Output Power vs. Tone Spacing
-15
-20
-15
-20
-25
-30
-35
-40
-45
-50
-55
Frequency = 7.0 GHz
No 10uF
Frequency = 7.0 GHz
With 10uF
-25
-30
-35
-40
-45
-50
-55
5 MHz
50 MHz
10 MHz
20 MHz
5 MHz
10 MHz
20 MHz
100 MHz
200 MHz
50 MHz
100 MHz
200 MHz
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
35 36 37 38 39 40 41 42 43 44 45 46
Output Power per Tone (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
14 of 23
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ–ꢀHarmonics
Test conditions, unless otherwise noted: Pulsed VD = 24 V, IDQ = 3.4 A, Duty Cycle = 20%, PW = 150 us, TBASE = +25 ºC
2ND Harmonic vs. PIN vs. TBASE
3RD Harmonic vs. PIN vs. TBASE
-30
-35
-40
-45
-50
-55
-60
-65
-70
-30
-35
-40
-45
-50
-55
-60
-65
-70
Frequency = 6.4 GHz
Frequency = 6.4 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power (dBm)
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power (dBm)
2ND Harmonic vs. PIN vs. VD
3RD Harmonic vs. PIN vs. VD
-30
-35
-40
-45
-50
-55
-60
-65
-70
-30
-35
-40
-45
-50
-55
-60
-65
-70
Frequency = 6.4 GHz
Frequency = 6.4 GHz
20V_3.4A
24V_3.4A
24V_2.0A
20V_3.4A
24V_3.4A
24V_2.0A
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power (dBm)
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power (dBm)
2ND Harmonic vs. PIN vs. Frequency
3RD Harmonic vs. PIN vs. Frequency
-30
-35
-40
-45
-50
-55
-60
-65
-70
-30
-35
-40
-45
-50
-55
-60
-65
-70
5.7 GHz
6.4 GHz
7.0 GHz
5.7 GHz
6.4 GHz
7.0 GHz
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power (dBm)
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power (dBm)
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ–ꢀSmall Signal
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, TBASE = +25 ºC
Gain vs. Frequency vs. TBASE
Gain vs. Frequency vs. VD
35
33
31
29
27
25
23
21
19
17
15
13
35
33
31
29
27
25
23
21
19
17
15
13
20 V
24 V
-40 C
+25 C
+85 C
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Input RL vs. Frequency vs. TBASE
Input RL vs. Frequency vs. VD
-15
-18
-21
-24
-27
-30
-33
-15
-18
-21
-24
-27
-30
-33
20 V
24 V
-40 C
+25 C
+85 C
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Output RL vs. Frequency vs. TBASE
Output RL vs. Frequency vs. VD
-15
-18
-21
-24
-27
-30
-33
-15
-18
-21
-24
-27
-30
-33
-40 C
+25 C
+85 C
20 V
24 V
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Performance Plotsꢀ–ꢀSmall Signal
Test conditions, unless otherwise noted: CW VD = 24 V, IDQ = 3.4 A, TBASE = +25 ºC
Gain vs. Frequency vs. IDQ
35
33
31
29
27
25
23
21
19
17
15
13
2 A
3.4 A
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Input RL vs. Frequency vs. IDQ
Output RL vs. Frequency vs. IDQ
-15
-18
-21
-24
-27
-30
-33
-15
-18
-21
-24
-27
-30
-33
2 A
3.4 A
2 A
3.4 A
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
Frequency (GHz)
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
(1)
Quiescent
Thermal Resistance, θJC
0.40
ºC/W
Tbase = 85 °C, VD = 24 V, IDQ = 3.4 A
PDISS = 81.6 W
(2)
Channel Temperature, TCH
118
0.25
137
0.43
161
°C
ºC/W
°C
(1)
Pulsed, Tbase = 85 °C, VD = 24 V, IDQ = 3.4 A, Freq = 7 GHz, ID_Drive
13 A, DC = 20%, PW = 150 us, PIN = 32 dBm, POUT,SAT = 50.3 dBm
=
Thermal Resistance, θJC
(2)
Channel Temperature, TCH
PDISS = 206 W
(1)
CW, Tbase = 85 °C, VD = 24 V, IDQ = 3.4 A, Freq = 7 GHz, ID_Drive = 9 A,
PIN = 28 dBm, POUT = 46 dBm
Thermal Resistance, θJC
ºC/W
°C
(2)
Channel Temperature, TCH
Notes:
PDISS = 177 W
1. Thermal resistance determined to the back of package (85 °C)
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates,” located here https://www.qorvo.com/products/d/da006480
Dissipated Power and Maximum Gate Current
IG_MAX vs. TCH
Dissipated Power vs. Freq. vs. VD
TBASE = 85 0C
200
180
160
140
120
100
80
220
200
180
160
140
120
100
80
Total
Stage 2
Stage 1
60
40
20
20 V
24 V
0
5.5 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5
110
120
130
140
150
160
170
180
Test conditions, unless otherwise noted: Pulsed, VD = 24 V, IDQ = 3.4 A, PIN = +32 dBm, TBASE = +85ꢁºC
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Applications Information
C3
C2
C12*
C11
10 uF
10 uF
0.1 uF
0.1 uF
1
2
3
10
9
8
VG
VD
RF OUT
RF IN
7
6
4
5
C9
C5
C8
C6
10 uF
0.1 uF
0.1 uF
10 uF
*C9, *C12: optional, to optimize linearity depending tone spacing, not populated on Qorvo’s EVB, see performances on page 9 – 14
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 200 mA, IG limit to 18 A
2. Set VG to −5.0 V
1. Reduce VG to −5.0 V. Ensure IDQ ~ 0 mA
2. Set VD to 0 V
3. Set VD +24 V
4. Turn off RF signal
4. Adjust VG more positive until IDQ = 3.4 A (VG -2.5V +/-
5. Turn off VD supply
6. Turn off VG supply
typical)
5. Apply RF signal
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Evaluation Board (EVB) Layout Assembly
Bill of Materials
Reference Des. Value Description
Manuf.
Qorvo
Part Number
U1
-
100W C-Band GaN Power Amplifier Module
QPM1017
C2, C5, C8, C11 0.1 uF CAP, 0.1uF, ±10%, 50V, X7R, 0805
Various
Various
C3, C6
10 uF CAP, 10uF, 20%, 50V, 20%, X5R, 1206
CAP, 10uF, 20%, 50V, 20%, X5R, 1206
Optional, to optimize linearity depending tone
spacing, see page 19 for recommendation, not
populated on Qorvo EVB.
C9, C12
10 uF
Various
H1, H2, H3, H4
J1, J2
-
-
CONN, HDR, 4 POS, 2 RAW, SMD, Au
Connector, Female, End Launch, 1092-02A-5
Screw, Cap, Socket Head, 2-56X1/8”
Various
Southwest Microwave 1092-02A-5
S1 – S8
S9 – S12
PCB
Various
Various
Screw, Cap, Socket Head, 0-80X3/32”
-
-
PCB, Rogers 6035 10mils, 1oz Ni/Au plating 2 sides
H-Block, Copper C110, 1.744x 2.201 x 0.275T
Various
Various
Custom
Custom
H-Block
Inventec Performance Syntech, SN62,
Solder
Paste, solder, Syntech, Sn62/Pb36/Ag2
Chemicals USA
T3, 90.5, 250J
Epoxy
Epoxy, Ablebond 84-1LMI 3cc
Henkel Corporation
84-1LMI
Thermal
Compound
Artic Silver 5
AS5-3.5G
-
CHEM, Thermal Compound, Silver 5GR
Artic Silver
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Mechanical Information
Notes:
1. Materials:
Package base: Copper
Finish
Leads
Finish
LID
: Gold
: Alloy 194
: Gold
1
2
3
4
10
9
8
7
: LCP (Liquid Crystal Polymer)
2. Part is epoxy sealed
3. Part Marking:
QPM1017
: Part number
YY: Part assembly year
5
6
WW: Part assembly week
ZZZ: Serial number
MXXX: Batch ID
4. Dimensions: inches
5. Tolerances:
.XX: ꢂ 0.01
.XXX: ꢂ 0.005
.XXXX: ꢂ 0.0010
Angles: ꢂ 0.5 0
Pin Description
Pin No. Symbol Description
1
VG1
Gate voltage Amp 1. External bypassing required; refer to page 19 for recommendation
2, 4, 7, 9 Ground
Must be grounded to PCB
3
RFIN
VG2
RF Input. Matched to 50ꢀΩ, DC blocked, DC shorted to ground
Gate voltage Amp 2. External bypassing required; refer to page 19 for recommendation
Drain voltage Amp 2. External bypassing required; refer to page 19 for recommendation
RF Output. Matched to 50ꢀΩ, DC blocked
5
6
VD2
8
RFOUT
VD1
10
Drain voltage Amp 1. External bypassing required; refer to page 19 for recommendation
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB
and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:
4. Apply no-flux solder to each pin of the QPM1017. The component leads should be manually soldered, and the
package should not be subjected to conventional reflow processes. The use of no-clean solder to avoid washing
after soldering is recommended.
Solderability
1. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow
processes.
2. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260ꢀ°C
3. The use of no-clean solder to avoid washing after soldering is recommended
Data Sheet Rev. A, September 2019 | Subject to change without notice
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QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Handling Precautions
Parameter
Rating Standard
Caution!
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1A
C2a
N/A
ANSI/ESD/JEDEC JS-001
ANSI/ESD/JEDEC JS-002
Blank, null, no content
ESD-Sensitive Device
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. A, September 2019 | Subject to change without notice
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