ISL6744AUZ-TR5252 [RENESAS]
1A SWITCHING CONTROLLER, 2000kHz SWITCHING FREQ-MAX, PDSO8, GREEN, PLASTIC, MO-187AA, MSOP-8;型号: | ISL6744AUZ-TR5252 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 1A SWITCHING CONTROLLER, 2000kHz SWITCHING FREQ-MAX, PDSO8, GREEN, PLASTIC, MO-187AA, MSOP-8 信息通信管理 开关 光电二极管 |
文件: | 总27页 (文件大小:1042K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATASHEET
ISL6744A
Intermediate Bus PWM Controller
FN6554
Rev.1.00
Aug 25, 2017
The ISL6744A is a low cost, primary side, double-ended
controller intended for applications using full and
half-bridge topologies for unregulated DC/DC converters. It
is a voltage-mode PWM controller designed for half-bridge
and full-bridge power supplies. It provides precise
switching frequency control, adjustable soft-start, precise
dead time control with dead times as low as 35ns, and
overcurrent shutdown. The ISL6744A is identical to the
ISL6744, but is optimized for higher noise environments.
Features
• Precision duty cycle and dead time control
• 100µA start-up current
• Adjustable delayed overcurrent shutdown and restart
• Adjustable oscillator frequency up to 2MHz
• 1A MOSFET gate drivers
• Adjustable soft-start
Low start-up and operating currents allow for easy biasing
in both AC/DC and DC/DC applications. This advanced
BiCMOS design features low start-up and operating
currents, adjustable switching frequency up to 1MHz, 1A
FET drivers, and very low propagation delays for a fast
response to overcurrent faults.
• Internal over-temperature protection
• 35ns control to output propagation delay
• Small size and minimal external component count
• Input undervoltage protection
• Pb-free (RoHS compliant)
Related Literature
Applications
• For a full list of related documents, visit our website
• Telecom and datacom isolated power
• ISL6744A product page
• DC transformers
• Bus converters
FN6554 Rev.1.00
Aug 25, 2017
Page 1 of 27
ISL6744A
Contents
1.
Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
1.3
1.4
1.5
Internal Architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Typical Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.
Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
2.2
2.3
2.4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.
4.
Typical Performance Curves. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
4.2
4.3
4.4
4.5
4.6
4.7
Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Soft-Start Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Gate Drive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Overcurrent Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Ground Plane Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.
Typical Application. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Circuit Elements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Design Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Transformer Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
MOSFET Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Oscillator Component Selection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Output Filter Design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Current Limit Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.
7.
8.
9.
Component List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
FN6554 Rev.1.00
Aug 25, 2017
Page 2 of 27
1. Overview
1.1
Internal Architecture
VDD
FL
VBIAS
VDD
VBIAS
5.00V
OUTA
OUTB
Q
Q
T
UVLO
+
-
PWM
VBIAS
Internal
OT Shutdown
130 - 150 C
Toggle
BG
70µA
GND
ON
SS
VBIAS
+
-
SS Clamp
15µA
SS Charged
RTD
-
+
-
2.0V
3.9V
+
IRTD
VBIAS
4.0V
S
R
Q
Q
160µA
ON
OC Latch
-
CLK
PE
AK
2.8V
S
Q
Q
+
R
Q
Q
CT
Reset
Dominant
Valley
-
+
SS LOW
+
-
0.27V
50µs
0.8V
Retriggerable One Shot
Fault Latch
SS
Set Dominant
S
Q
S
R
Q
Q
FL
IDCH
ON
R
Q
VBIAS
PWM Latch
LATCH
Set Dominant
VBIAS UV
4.65V 4.80V
-
+
BG
OC Detect
+
-
CS
0.6V
SS Comparator
+
CT
-
SS
0.8
Figure 1. Block Diagram
1.2
Typical Application
SP1
VIN+
+12V
QR1
C11
L1
QH
QR3
T1
C2
L3
R8
C9
C8
C13
R10
RTN
TP1
L2
C1
T2
R9
QR2
QR4
QL
R2
C14
R11
CR3
C12
CR2
C3
R1
TP2
CR1
C7
R6
R5
U4
TP4
ISL6700
C10
VDD
LO
VSS
HB
HO
HS
LI
HI
C4
C5
TP5
U1
SS
VIN-
GND
OUTB
OUTA
VDD
CS
CT
C18
RTD
R7
Q5
D2
TP6
C15
C16
D1
R12
C6
Figure 2. Typical Application Using ISL6744A - 48V Input DC Transformer, 12V
at 8A Output
ISL6744A
1. Overview
1.3
Ordering Information
Part Number
(Notes 1, 2, 3)
Temp. Range
(°C)
Package
(RoHS Compliant)
Pkg.
Dwg. #
Part Marking
ISL6744AAUZ
6744A
6744A ABZ
-40 to +105
-40 to +105
8 Ld MSOP
8 Ld SOIC
M8.118
M8.15
ISL6744AABZ
Notes:
1. Add “-T” suffix for 2.5k for tape and reel option. Refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials
and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and
Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or
exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), see the product information page for ISL6744A. For more information on MSL, refer to
TB363.
1.4
Pin Configuration
ISL6744A
(SOIC, MSOP)
Top View
SS
RTD
CS
1
8
7
6
5
VDD
OUTB
OUTA
GND
2
3
4
CT
FN6554 Rev.1.00
Aug 25, 2017
Page 5 of 27
ISL6744A
1. Overview
1.5
Pin Descriptions
Pin
Pin
Name Number
Description
SS
RTD
CS
1
2
3
Connect the soft-start timing capacitor between this pin and GND to control the duration of soft-start. The value of the
capacitor determines the rate of increase of the duty cycle during start-up, controls the overcurrent shutdown delay, and
the overcurrent and short-circuit hiccup restart period.
Oscillator timing capacitor discharge current control pin. A resistor is connected between this pin and GND. The
current flowing through the resistor determines the magnitude of the discharge current. The discharge current is
nominally 55x this current. The PWM dead time is determined by the timing capacitor discharge duration.
The input to the overcurrent protection comparator. The overcurrent comparator threshold is set at 0.600V nominal.
The CS pin is shorted to GND at the end of each switching cycle. Depending on the current sensing source
impedance, a series input resistor may be required due to the delay between the internal clock and the external
power switch.
Exceeding the overcurrent threshold will start a delayed shutdown sequence. When an overcurrent condition is
detected, the soft-start charge current source is disabled. The soft-start capacitor begins discharging through a 15µA
current source, and if it discharges to less than 3.9V (sustained overcurrent threshold), a shutdown condition occurs
and the OUTA and OUTB outputs are forced low. When the soft-start voltage reaches 0.27V (reset threshold) a
soft-start cycle begins.
If the overcurrent condition ceases, and then an additional 50µs period elapses before the shutdown threshold is
reached, no shutdown occurs. The SS charging current is re-enabled and the soft-start voltage is allowed to recover.
CT
4
5
The oscillator timing capacitor is connected between this pin and GND.
GND
Reference and power ground for all functions on this device. Due to high peak currents and high frequency
operation, a low impedance layout is necessary. Ground planes and short traces are highly recommended.
OUTA
OUTB
VDD
6
7
8
Alternate half cycle output stages. Each output is capable of 1A peak current for driving power MOSFETs or
MOSFET drivers. Each output provides very low impedance to overshoot and undershoot.
The power connection for the IC. To optimize noise immunity, bypass VDD to GND with a ceramic capacitor as close
to the VDD and GND pins as possible.
The total supply current, I , will be dependent on the load applied to outputs OUTA and OUTB. Total I
current is
DD DD
the sum of the quiescent current and the average output current. Knowing the operating frequency (f ) and the
SW
output loading capacitance charge (Q) per output, the average output current can be calculated from (EQ. 1):
(EQ. 1)
I
= 2 Q f
SW
OUT
FN6554 Rev.1.00
Aug 25, 2017
Page 6 of 27
ISL6744A
2. Specifications
2. Specifications
2.1
Absolute Maximum Ratings
Parameter
Minimum
-0.3
Maximum
Unit
V
Supply Voltage, V
OUTA, OUTB
Signal Pins
+20.0
DD
-0.3
V
V
DD
5
-0.3
V
Peak GATE Current
1
A
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may
adversely impact product reliability and result in failures not covered by warranty.
2.2
Thermal Information
Thermal Resistance (Typical) (Note 4)
(°C/W)
128
JA
8 Ld MSOP Package
8 Ld SOIC Package
Note:
98
4. is measured with the component mounted on a high-effective thermal conductivity test board in free air. Refer to TB379.
JA
Parameter
Maximum Junction Temperature
Maximum Storage Temperature Range
Pb-Free Reflow Profile
Minimum
-55
Maximum
+150
Unit
°C
-65
+150
°C
refer to TB493
2.3
Recommended Operating
Conditions
Parameter
Minimum
Maximum
+105
Unit
°C
Temperature Range
-40
9
Supply Voltage Range (Typical)
16
VDC
2.4
Electrical Specifications
Recommended operating conditions unless otherwise noted. Refer to Figure 1 on page 3 and Figure 2 on page 4. 9V < V < 16V, R = 51.1kΩ,
D
TD
C
= 470pF, T = -40°C to +105°C (Note 5), Typical values are at T = +25°C
A A
T
Parameter
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
Start-Up Current, I
V
< START threshold
DD
-
-
-
175
-
µA
mA
mA
V
DD
Operating Current, I
R
, C
LOAD OUTA,B
= 0
2.89
5
DD
C
= 1nF
-
8.5
6.6
6.3
-
OUTA,B
UVLO START Threshold
UVLO STOP Threshold
Hysteresis
5.9
5.3
-
6.3
5.7
0.6
V
V
Current Sense
Current Limit Threshold
CS to OUT Delay
CS Sink Current
0.55
0.6
35
10
0.65
V
(Note 6)
-
-
-
ns
8
mA
FN6554 Rev.1.00
Aug 25, 2017
Page 7 of 27
ISL6744A
2. Specifications
Recommended operating conditions unless otherwise noted. Refer to Figure 1 on page 3 and Figure 2 on page 4. 9V < V < 16V, R = 51.1kΩ,
D
TD
C
= 470pF, T = -40°C to +105°C (Note 5), Typical values are at T = +25°C (Continued)
T
A
A
Parameter
Test Conditions
Min
Typ
Max
Unit
Input Bias Current
-1
-
1
µA
Pulse Width Modulator
Minimum Duty Cycle
Maximum Duty Cycle
V
< C offset
-
-
-
-
-
-
0
-
%
%
ERROR
T
C
= 470pF, R = 51.1kΩ
TD
94
99
1
T
T
C
= 470pF, R = 1.1kΩ (Note 6)
TD
-
%
C
to SS Comparator Input Gain
(Note 6)
(Note 6)
-
V/V
V/V
T
SS to SS Comparator Input Gain
Oscillator
0.8
-
Charge Current
143
1.925
45
156
2
170
2.075
65
µA
V
R
Voltage
TD
Discharge Current Gain
-
µA/µA
V
C
C
Valley Voltage
Peak Voltage
0.75
2.70
0.8
2.80
0.85
2.90
T
V
T
Soft-Start
Charging Current
45
3.8
-
-
68
4.2
-
µA
V
SS Clamp Voltage
4.0
3.9
15
Overcurrent Shutdown Threshold Voltage
Overcurrent Discharge Current
Reset Threshold Voltage
Output
(Note 6)
(Note 6)
V
12
23
µA
V
0.25
0.27
0.30
High Level Output Voltage (V
)
V
- V
or V
, I
= -100mA
-
-
-
-
0.5
0.5
17
2.0
1.0
60
V
V
OH
DD
OUTA
OUTB OUT
Low Level Output Voltage (V
Rise Time
)
I
OUT
= 100mA
OL
C
= 1nF, V
= 1nF, V
= 12V
= 12V
ns
ns
GATE
GATE
DD
DD
Fall Time
C
20
60
Thermal Protection
Thermal Shutdown
Thermal Shutdown Clear
(Note 6)
(Note 6)
(Note 6)
-
-
-
145
130
15
-
-
-
°C
°C
°C
Hysteresis, Internal Protection
Notes:
5. Specifications at -40°C and +105°C are established by +25°C test with margin limits.
6. Limits are established by characterization and are not production tested.
7. All voltages measured with respect to GND, unless otherwise specified.
FN6554 Rev.1.00
Aug 25, 2017
Page 8 of 27
ISL6744A
3. Typical Performance Curves
3. Typical Performance Curves
4
3
1-10
1-10
65
C
= 1000pF
T
60
55
50
45
C
= 680pF
T
C
= 470pF
T
C
= 220pF
= 100pF
T
C
T
100
10
40
0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
10
20
30
40
50
60
(kΩ)
70
80
90
100
R
Current (mA)
R
TD
TD
Figure 3. Oscillator C Discharge Current Gain
Figure 4. Dead Time vs Capacitance
T
600
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
500
400
300
200
100
0
-40 -25 -10
5
20
35
50
65
80
95 110
100
200 300
400 500
C
600
(pF)
700 800
900 1000
Temperature (°C)
T
Figure 5. Capacitance vs Oscillator Frequency
Figure 6. Charge Current vs Temperature
(R = 49.9kΩ)
TD
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0
10
20
30
40
50
(kΩ)
60
70
80
90
100
R
TD
Figure 7. Timing Capacitor Voltage vs R
TD
FN6554 Rev.1.00
Aug 25, 2017
Page 9 of 27
ISL6744A
4. Functional Description
4. Functional Description
4.1
Features
The ISL6744A PWM is an excellent choice for low cost bridge topologies for applications requiring accurate frequency and
dead time control. It features 1A FET drivers, adjustable soft-start, overcurrent protection, and internal thermal protection,
allowing a highly flexible design with minimal external components.
4.2
Oscillator
The ISL6744A has an oscillator with a frequency range to 2MHz, programmable using a resistor R and capacitor C .
TD
T
The switching period is the sum of the timing capacitor charge and discharge durations. The charge duration is determined
by C and the internal current source (assumed to be 160µA in the formula). The discharge duration is determined by R
T
TD
and C .
T
4
T
1.2510 C
s
(EQ. 2)
(EQ. 3)
C
T
1
----------------------------------------------------------------------------
T
R
C
T
s
D
TD
CTDischargeCurrentGain
1
-------------
T
= T + T =
D
s
(EQ. 4)
OSC
C
f
OSC
where T and T are the approximate charge and discharge times, respectively, T
is the oscillator free running period,
C
D
OSC
and f
is the oscillator frequency. One output switching cycle requires two oscillator cycles. The actual times are slightly
OSC
longer than calculated due to internal propagation delays of approximately 5ns per transition. This delay adds directly to the
switching duration, and also causes overshoot of the timing capacitor peak and valley voltage thresholds, effectively
increasing the peak-to-peak voltage on the timing capacitor. Additionally, if very low charge and discharge currents are
used, there will be an increased error due to the input impedance at the C pin.
T
The above formulas help with frequency estimation. Practically, effects such as stray capacitances that affect the overall C
T
capacitance, variation in R voltage and charge current over-temperature, etc. exist, and are best evaluated in-circuit.
TD
(EQ. 2) follows from the basic capacitor current equation:
.
dV
i = C
dt
In this case, with variation in dV with R (Figure 7), and in charge current (Figure 6), results from (EQ. 2) would differ
TD
from the calculated frequency. The “Typical Performance Curves” on page 9 can be used as a tool along with the above
equations to estimate the operating frequency more accurately.
The maximum duty cycle (D) and dead time (DT) can be calculated using (EQ. 5) and (EQ. 6):
D = T T
(EQ. 5)
(EQ. 6)
C
OSC
DT = 1 – D T
s
OSC
FN6554 Rev.1.00
Aug 25, 2017
Page 10 of 27
ISL6744A
4. Functional Description
4.3
Soft-Start Operation
The ISL6744A features a soft-start using an external capacitor in conjunction with an internal current source. Soft-start
reduces stresses and surge currents during start-up.
The oscillator capacitor signal (C ) is compared to the soft-start voltage (SS) in the SS comparator, which drives the PWM
T
latch. Duty cycle is limited while the SS voltage is less than 3.5V. The output pulse width increases as the soft-start
capacitor voltage increases up to 3.5V. This has the effect of increasing the duty cycle from zero to the maximum pulse
width during the soft-start period. When the soft-start voltage exceeds 3.5V, soft-start is complete. Soft-start occurs during
start-up and after recovery from an overcurrent shutdown. The soft-start voltage is clamped to 4V.
Please note the capacitance of the soft-start capacitor, C . If C ≥ 0.1µF, the user will need to add a resistor in series with
SS SS
the capacitor, 100Ω/µF (100Ω at least; 1k at most).
4.4
Gate Drive
The ISL6744A can source and sink 1A peak current, and can also be used in conjunction with a MOSFET driver, such as
the ISL6700, for level shifting. To limit the peak current through the IC, place an external resistor between the totem-pole
output of the IC (OUTA or OUTB pin) and the gate of the MOSFET. This small series resistor also damps any oscillations
caused by the resonant tank of the parasitic inductances in the traces of the board and the FET’s input capacitance.
4.5
Overcurrent Operation
Overcurrent delayed shutdown is enabled after the soft-start cycle is complete. If an overcurrent condition is detected, the
soft-start charging current source is disabled and the soft-start capacitor is allowed to discharge through a 15µA source. At
the same time, a 50µs retriggerable one-shot timer is activated. The timer remains active for 50µs after the overcurrent
condition ceases. If the soft-start capacitor discharges to 3.9V, the output is disabled. This state continues until the soft-start
voltage reaches 270mV, at which time a new soft-start cycle is initiated. If the overcurrent condition stops at least 50µs prior
to the soft-start voltage reaching 3.9V, the soft-start charging currents revert to normal operation and the soft-start voltage is
allowed to recover.
4.6
Thermal Protection
An internal temperature sensor protects the device if the junction temperature exceeds +145°C. There is approximately
+15°C of hysteresis.
4.7
Ground Plane Requirements
Careful layout is essential for satisfactory operation of the device. A good ground plane must be employed. V
bypassed directly to GND with good high frequency capacitance.
should be
DD
FN6554 Rev.1.00
Aug 25, 2017
Page 11 of 27
ISL6744A
5. Typical Application
5. Typical Application
Figure 2 on page 4 features the ISL6744A in an unregulated half-bridge DC/DC converter configuration, often referred to as a
DC transformer or bus converter.
The input voltage is 48V ±10% DC. The output is a nominal 12V when the input voltage is at 48V. Since this is an unregulated
topology, the output voltage will vary proportionately with the input voltage. Load regulation is a function of resistance
between the source and the converter output. The output is rated at 8A.
5.1
Circuit Elements
The converter design is comprised of the following functional blocks:
Input Filtering: L1, C1, R1
Half-Bridge Capacitors: C2, C3
Isolation Transformer: T1
Primary Snubber: C13, R10
Start Bias Regulator: CR3, R2, R7, C6, Q5, D1
Supply Bypass Components: C15, C4
Main MOSFET Power Switch: QH, QL
Current Sense Network: T2, CR1, CR2, R5, R6, R11, C10, C14
Control Circuit: U1, C18, C16, D2
Output Rectification and Filtering: QR1, QR2, QR3, QR4, L2, C9, C8
Secondary Snubber: R8, R9, C11, C12
FET Driver: U4
Bootstrap Components for Driver: CR4, C5
ZVS Resonant Delay (Optional): L3, C7
5.2
Design Specifications
The following design requirements were selected for evaluation purposes:
Switching Frequency, f : 235kHz
SW
V
V
: 48V ± 10%
IN
: 12V (nominal)
OUT
I
: 8A (steady state)
OUT
P
: 100W
OUT
Efficiency: 95%
Ripple: 1%
FN6554 Rev.1.00
Aug 25, 2017
Page 12 of 27
ISL6744A
5. Typical Application
5.3
Transformer Design
The design of a transformer for a half-bridge application is an iterative process. The process requires compromises, and
even experienced designers will produce different designs when presented with identical requirements. For clarity, the
iterative design process is not presented here.
The abbreviated design process is as follows:
• Select a core geometry suitable for the application. Constraints of height, footprint, mounting preference, and operating
environment will affect the core geometry.
• Determine the turns ratio.
• Select suitable core material(s).
• Select the maximum flux density desired for operation.
• Select the core size. Core size is determined by the capability of the core structure to store the required energy, the number
of turns that have to be wound, and the wire gauge needed. Often the window area (the space used for the windings) and
power loss determine the final core size.
• Determine the maximum desired flux density. Depending on the frequency of operation, the core material selected, and the
operating environment, the allowed flux density must be determined. The decision of what flux density to allow is often
difficult to determine initially. Usually, the highest flux density that produces an acceptable design is used, but often the
winding geometry dictates a larger core than is indicated based on flux density alone.
• Determine the number of primary turns.
• Select the wire gauge for each winding.
• Determine the winding order and insulation requirements.
• Verify the design.
For this application, we have selected a planar structure to achieve a low profile design. A PQ style core was selected
because of its round center leg cross section, but many suitable core styles are available.
n
n
n
n
SR
S
n
P
S
SR
Figure 8. Transformer Schematic
Because the converter is operating as an open loop at nearly 100% duty cycle, the turns ratio, N, is the ratio of the input
voltage to the output voltage divided by 2.
V
48
12 2
IN
(EQ. 7)
------------------------
---------------
= 2
N =
=
V
2
OUT
The factor of 2 in the denominator is due to the half-bridge topology. Only half of the input voltage is applied to the primary
of the transformer.
A PC44HPQ20/6 “E-Core” plus a PC44PQ20/3 “I-Core” from TDK were selected for the transformer core. The ferrite
material is PC44.
The core parameter of concern for flux density is the effective core cross-sectional area, Ae. For the PQ core pieces
selected:
2
2
Ae = 0.62cm or 6.2e -5m
Using Faraday’s Law, V = N d/dt, the number of primary turns can be determined after the maximum flux density is set.
An acceptable Bmax is ultimately determined by the allowable power dissipation in the ferrite material and is influenced by
the lossiness of the core, core geometry, operating ambient temperature, and air flow. The TDK datasheet for PC44 material
FN6554 Rev.1.00
Aug 25, 2017
Page 13 of 27
ISL6744A
5. Typical Application
3
indicates a core loss factor of ~400mW/cm with a ±2000 gauss 100kHz sinusoidal excitation. The application uses a
235kHz square wave excitation, so no direct comparison between the application and the data can be made. Interpolation of
3
the data is required. The core volume is approximately 1.6cm , so the estimated core loss is:
f
3
mW
----------
3
200kHz
100kHz
act
---------------
---------------------
P
cm
= 0.4 1.6
= 1.28
W
(EQ. 8)
loss
f
meas
cm
1.28W of dissipation is significant for a core of this size. Reducing the flux density to 1200 gauss will reduce the dissipation
by about the same percentage, or 40%. Evaluate the transformer’s performance in the application to determine acceptable
dissipation.
From Faraday’s Law and using 1200 gauss peak flux density (B = 2400 gauss or 0.24 tesla):
–6
V
T
ON
(EQ. 9)
53 2 10
----------------------------------------------------
–5
IN
-----------------------------
N =
=
= 3.56
turns
2 A B
e
2 6.2 10 0.24
Rounding up yields four turns for the primary winding. The peak flux density using four turns is ~1100 gauss. From (EQ. 7)
on page 13, the number of secondary turns is 2.
The volts/turn for this design ranges from 5.4V at V = 43V to 6.6V at V = 53V. Therefore, the Synchronous Rectifier
IN IN
(SR) windings may be set at 1 turn each with proper FET selection. Selecting 2 turns for the synchronous rectifier windings
would also be acceptable, but the gate drive losses would increase.
Determine the equivalent wire gauge for the planar structure. Since each secondary winding conducts for only 50% of the
period, the RMS current is:
(EQ. 10)
I
= I
OUT
D = 10 0.5 = 7.07
A
RMS
where D is the duty cycle. Since an FR-4 PWB planar winding structure was selected, the width of the copper traces is
limited by the window area width, and the number of layers is limited by the window area height. The PQ core selected has
a usable window area width of 0.165 inches. Allowing one turn per layer and 0.020 inches clearance at the edges allows a
maximum trace width of 0.125 inches. Using 100 circular mils (c.m.)/A as a guideline for current density, and from
(EQ. 10), 707c.m. are required for each of the secondary windings (a circular mil is the area of a circle 0.001 inches in
2
diameter). Converting c.m. to square mils yields 555 mils (0.785 sq. mils/c.m.). Dividing by the trace width results in a
copper thickness of 4.44 mils (0.112mm). Using 1.3 mils/oz. of copper requires a copper weight of 3.4oz. To reduce cost,
3oz. copper was selected.
One layer of each secondary winding also contains the synchronous rectifier winding. For this layer, the secondary trace
width is reduced by 0.025 inches to 0.100 inches (0.015 inches for the SR winding trace width and 0.010 inches spacing
between the SR winding and the secondary winding).
FN6554 Rev.1.00
Aug 25, 2017
Page 14 of 27
ISL6744A
5. Typical Application
The choice of copper weight may be validated by calculating the DC copper losses of the secondary winding. Ignoring the
terminal and lead-in resistance, the resistance of each layer of the secondary may be approximated using (EQ. 11).
2
-----------------------
R =
(EQ. 11)
r
2
----
t ln
r
1
where
R = Winding resistance
= Resistivity of copper = 669e-9Ω-inches at +20°C
t = Thickness of the copper (3 oz.) = 3.9e-3 inches
r = Outside radius of the copper trace = 0.324 or 0.299 inches
2
r = Inside radius of the copper trace = 0.199 inches
1
The winding without the SR winding on the same layer has a DC resistance of 2.21mΩ. The winding that shares the layer
with the SR winding has a DC resistance of 2.65mΩ. With the secondary configured as a 4 turn center tapped winding (2
turns each side of the tap), the total DC power loss for the secondary at +20°C is 486mW.
The primary windings have an RMS current of approximately 5A (I
OUT
x N /N at ~ 100% duty cycle). The primary is
S P
configured as 2 layers, 2 turns per layer to minimize the winding stack height. Allowing 0.020 inches edge clearance and
0.010 inches between turns yields a trace width of 0.0575 inches. Ignoring the terminal and lead-in resistance, and using
(EQ. 11), the inner trace has a resistance of 4.25mΩ, and the outer trace has a resistance of 5.52mΩ. The resistance of the
primary then is 19.5mΩ at +20°C. The total DC power loss for the primary at +20°C is 489mW.
Improved efficiency and thermal performance can be achieved by selecting heavier copper weight for the windings.
Evaluation in the application will determine its need.
The order and geometry of the windings affects the AC resistance, winding capacitance, and leakage inductance of the
finished transformer. To reduce these effects, interleave the windings. The primary winding is placed between the two
secondary windings. The winding layout appears as follows:
.
Figure 10. Internal layer 1: 1 Turn Secondary Winding
Figure 9. Top Layer: 1 Turn Secondary and SR Windings
Figure 11. Internal Layer 2: 2 Turns Primary Winding
Figure 12. Internal Layer 3: 2 Turns Primary Winding
FN6554 Rev.1.00
Aug 25, 2017
Page 15 of 27
ISL6744A
5. Typical Application
Figure 13. Internal Layer 4: 1 Turn Secondary Winding
Figure 14. Bottom Layer: 1 Turn Secondary and SR
Windings
0.689
0.358
0.807
0.639
0.403
0.169
0.000
0.000 0.184
0.479
0.774
1.054
Figure 15. PWB Dimensions
5.4
MOSFET Selection
The criteria for selection of the primary side half-bridge FETs and the secondary side synchronous rectifier FETs is largely
based on the current and voltage rating of the device. However, do not ignore the FET drain-source capacitance and gate
charge.
The Zero Voltage Switch (ZVS) transition timing is dependent on the transformer’s leakage inductance and the capacitance
at the node between the upper FET source and the lower FET drain. The node capacitance is comprised of the drain-source
capacitance of the FETs and the transformer parasitic capacitance. The leakage inductance and capacitance form an LC
resonant tank circuit, which determines the duration of the transition. The amount of energy stored in the LC tank circuit
determines the transition voltage amplitude. If the leakage inductance energy is too low, ZVS operation is not possible and
near or partial ZVS operation occurs. As the leakage energy increases, the voltage amplitude increases until it is clamped by
the FET body diode to ground or V , depending on which FET conducts. When the leakage energy exceeds the minimum
IN
required for ZVS operation, the voltage is clamped until the energy is transferred. This behavior increases the time window
for ZVS operation. However, the transition time and the period of time during which the voltage is clamped reduces the
effective duty cycle.
The gate charge affects the switching speed of the FETs. Higher gate charge translates into higher drive requirements and/or
slower switching speeds. The energy required to drive the gates is dissipated as heat.
The maximum input voltage, V , plus transient voltage, determines the voltage rating required. With a maximum input
IN
voltage of 53V for this application, and if we allow a 10% adder for transients, a voltage rating of 60V or higher will suffice.
FN6554 Rev.1.00
Aug 25, 2017
Page 16 of 27
ISL6744A
5. Typical Application
The RMS current through each primary side FET can be determined from (EQ. 10), substituting 5A of primary current for
(assuming 100% duty cycle). The result is 3.5A RMS. Fairchild FDS3672 FETs, rated at 100V and 7.5A (r
I
=
DS(ON)
OUT
22mΩ), were selected for the half-bridge switches.
The synchronous rectifier FETs must withstand approximately one half of the input voltage, assuming no switching
transients are present. This suggests that a device capable of withstanding at least 30V is required. Empirical testing in the
circuit revealed switching transients of 20V were present across the device, indicating that a rating of at least 60V is
required.
The RMS current rating of 7.07A for each SR FET requires a low r
to minimize conduction losses, which is difficult to
DS(ON)
find in a 60V device. It was decided to use two devices in parallel to simplify the thermal design. Two Fairchild FDS5670
devices are used in parallel for a total of four SR FETs. The FDS5670 is rated at 60V and 10A (r = 14mΩ).
DS(ON)
5.5
Oscillator Component Selection
The desired operating frequency of 235kHz for the converter was established in “Design Specifications” on page 12. The
oscillator frequency operates at twice the frequency of the converter because two clock cycles are required for a complete
converter period.
During each oscillator cycle the timing capacitor, C , must be charged and discharged. Determining the required discharge
T
time to achieve Zero Voltage Switching (ZVS) is the critical design goal in selecting the timing components. The discharge
time sets the dead time between the two outputs, and is the same as ZVS transition time. After the discharge time is
determined, the remainder of the period becomes the charge time.
The ZVS transition duration is determined by the transformer’s primary leakage inductance, L , by the FET C , by the
lk oss
transformer’s parasitic winding capacitance, and by any other parasitic elements on the node. The parameters may be
determined by measurement, calculation, estimate, or by some combination of these methods.
L
2C
+ C
xfrmr
lk
oss
2
(EQ. 12)
-------------------------------------------------------------------
t
s
zvs
Device output capacitance, C , is non-linear with applied voltage. To determine the equivalent discrete capacitance, Cfet,
oss
a charge model is used. Using a known current source, the time required to charge the MOSFET drain to the desired
operating voltage is determined and the equivalent capacitance is calculated.
Ichg t
(EQ. 13)
-------------------
Cfet =
F
V
After the estimated transition time is determined, it must be verified directly in the application. The transformer leakage
inductance was measured at 125nH and the combined capacitance was estimated at 2000pF. Calculations indicate a
transition period of ~25ns. Verification of the performance yielded a value of T closer to 45ns.
D
FN6554 Rev.1.00
Aug 25, 2017
Page 17 of 27
ISL6744A
5. Typical Application
The remainder of the switching half-period is the charge time, T , and can be determined using (EQ. 14)
C
–9
1
1
-------------------
----------------------------------
3
T
=
– T
=
D
– 45 10 = 2.08
s
(EQ. 14)
C
2 f
SW
2 235 10
where f
is the converter switching frequency.
SW
Using Figure 5 on page 9, the capacitor value appropriate to the desired oscillator operating frequency of 470kHz can be
selected. A C value of 100pF, 150pF, or 220pF is appropriate for this frequency. A value of 150pF was selected.
T
To obtain the proper value for R , (EQ. 3) on page 10 is used. Because there is a 10ns propagation delay in the oscillator
TD
circuit, it must be included in the calculation. The value of R selected is 10kΩ.
TD
5.6
Output Filter Design
The output filter inductor and capacitor selection is simple and straightforward. Under steady state operating conditions the
voltage across the inductor is very small due to the large duty cycle. Voltage is applied across the inductor only during the
switch transition time, which is about 45ns in this application. Ignoring the voltage drop across the SR FETs, the voltage
across the inductor during the on time with V = 48V is:
IN
V
N 1 – D
S
2N
P
IN
-----------------------------------------------
(EQ. 15)
V
= V – V =
OUT
250
mV
L
S
where
V is the inductor voltage
L
V is the voltage across the secondary winding
S
V
is the output voltage
OUT
If a current ramp, I, of 5% of the rated output current is allowed, the minimum inductance required is:
V
T
ON
I
0.25 2.08
L
------------------------
----------------------------
(EQ. 16)
L
=
= 1.04
H
0.5
An inductor value of 1.5µH, rated for 18A was selected.
With a maximum input voltage of 53V, the maximum output voltage is about 13V. The closest higher voltage rated
capacitor is 16V. Under steady state operating conditions the ripple current in the capacitor is small, so it would seem
appropriate to have a low ripple current rated capacitor. However, a high rated ripple current capacitor was selected based
on the nature of the intended load, multiple buck regulators. To minimize the output impedance of the filter, a SANYO
OSCON 16SH150M capacitor in parallel with a 22µF ceramic capacitor were selected.
FN6554 Rev.1.00
Aug 25, 2017
Page 18 of 27
ISL6744A
5. Typical Application
5.7
Current Limit Threshold
The current limit threshold is fixed at 0.6V nominal, which is the reference to the overcurrent protection comparator. The
current level that corresponds to the overcurrent threshold must be chosen to allow for the dynamic behavior of an open
loop converter. In particular, the low inductor ripple current under steady state operation increases significantly as the duty
cycle decreases.
14
15
10
5
13
12
11
10
9
8
0.986 0.988
0.990 0.992 0.994 0.996 0.998 1.000
Time (ms)
0.9950
0.9960
0.9970
0.9980
0.9990
1.000
Time (ms)
V (L1:1)
I (L1)
V (L1:1)
I (L1)
Figure 16. Steady State Secondary Winding Voltage and
Inductor Current
Figure 17. Secondary Winding Voltage and Inductor
Current During Current Limit Operation
Figures 16 and 17 show the behavior of the inductor ripple under steady state and overcurrent conditions. In this example,
the peak current limit is set at 11A. The peak current limit causes the duty cycle to decrease, resulting in a reduction of the
average current through the inductor. The implication is that the converter can not supply the same output current in current
limit that it can supply under steady state conditions. The peak current limit setpoint must take this behavior into
consideration. A 5.11Ω current sense resistor was selected for the rectified secondary of current transformer T2 for the
ISL6744Eval 1, corresponding to a peak current limit setpoint of about 11A.
FN6554 Rev.1.00
Aug 25, 2017
Page 19 of 27
ISL6744A
5. Typical Application
5.8
Performance
The major performance criteria for the converter are efficiency, and to a lesser extent, load regulation. Efficiency, load
regulation, and line regulation performance are demonstrated in Figures 18 through 20.
As expected, the output voltage varies considerably with line and load when compared to an equivalent converter with a
closed loop feedback. However, for applications where tight regulation is not required, such as those applications that use
downstream DC/DC converters, this design approach is acceptable.
100
95
90
85
85
75
70
12.50
12.25
12.00
11.75
11.50
11.25
11.00
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Load Current (A)
Load Current (A)
Figure 19. Load Regulation at V = 48V
IN
Figure 18. Efficiency vs Load V = 48V
IN
13.5
13.0
12.5
12.0
11.5
11.0
10.5
42 43
44
45
46
47
48
49
50
51
52
53
Input Voltage (V)
Figure 20. Line Regulation at I
= 1A
OUT
FN6554 Rev.1.00
Aug 25, 2017
Page 20 of 27
ISL6744A
5. Typical Application
5.9
Waveforms
Typical waveforms can be found in Figures 21 through 25. Figure 21 shows the output voltage ripple and noise at 5A.
Figure 21. Output Ripple and Noise - 20MHz BW
Figures 22 and 23 show the voltage waveforms at the switching node shared by the upper FET source and the lower FET
drain. In particular, Figure 23 shows near ZVS operation at 5A of load when the upper FET is turning off and the lower FET
is turning on. ZVS operation occurs completely, implying that all the energy stored in the node capacitance has been
recovered. Figure 24 on page 22 shows the switching transition between outputs, OUTA and OUTB during steady state
operation. The dead time duration of 46.9ns is clearly shown.
A 2.7V zener is added between the VDD pins of ISL6700 and ISL6744, to ensure that the PWM turns on only after the
driver has turned on, thereby ensuring the soft-start function. Figure 25 on page 22 shows the soft-start operation.
Figure 22. FET Drain-Source Voltage
Figure 23. FET Drain-Source Voltage Near-ZVS Transition
FN6554 Rev.1.00
Aug 25, 2017
Page 21 of 27
ISL6744A
5. Typical Application
Figure 25. Output Soft-Start
Figure 24. OUTA - OUTB Transition
FN6554 Rev.1.00
Aug 25, 2017
Page 22 of 27
ISL6744A
6. Component List
6. Component List
Reference Designator
Value
Description
C1
1.0µF
3.3µF
1.0µF
0.1µF
4.7µF
Open
Capacitor, 1812, X7R, 100V, 20%
Capacitor, 1812, X5R, 50V, 20%
Capacitor, 0805, X5R, 16V, 10%
Capacitor, 0603, X7R, 16V, 10%
Capacitor, 0805, X5R, 10V, 20%
C2, C3
C4
C5
C6, C15
C7
Capacitor, 0603, Open or Optional Discrete Stray Capacitance
Capacitor, 1812, X5R, 16V, 20%
Capacitor, Radial, Sanyo 16SH150M
Capacitor, 0603, X7R, 50V, 10%
Capacitor, 0603, COG, 16V, 5%
Capacitor, 0603, X7R, 16V, 10%
Diode, Schottky, BAT54S, 30V
Diode, Schottky, BAT54, 30V
Diode, Schottky, SMA, 100V, 2.1A
Zener, 10V, Zetex BZX84C10ZXCT-ND
Zener, 2.7V, BZX84C2V7
Pulse, P2004T
C8
22µF
C9
150µF
1000pF
150pF
0.01µF
C10, C11, C12, C13, C14
C16
C18
CR1, CR2
CR3
CR4
D1
D2
L1
190nH
1.5µH
Short
L2
Bitech, HM73-301R5
L3
Jumper or Optional Discrete Leakage Inductance
Keystone, 1514-2
P1, P2, P3, P4
Q5
NPN
Transistor, ON MJD31C
QL, QH
FET, Fairchild FDS3672, 100V
FET, Fairchild FDS5670, 60V
Resistor, 2512, 1%
QR1, QR2, QR3, QR4
R1
3.3
3.01k
5.11
R2
Resistor, 2512, 1%
R5
Resistor, 0603, 1%
R6
205
Resistor, 0603, 1%
R7
75.0k
20.0
Resistor, 0805, 1%
R8, R9
Resistor, 0805, 1%
R10
18
Resistor, 2512, 1%
R11
100
Resistor, 0603, 1%
R12
10.0k
Custom
Custom
5002
Resistor, 0603, 1%
T1
Midcom 31718
T2
Midcom 31719R
TP1, TP2, TP4, TP5, TP6
Keystone
SP1
U1
Tektronix Scope Jack, 131-4353-00
Intersil ISL6744AAUZ, MSOP8
Intersil ISL6700IB, SOIC
U4
FN6554 Rev.1.00
Aug 25, 2017
Page 23 of 27
ISL6744A
7. Revision History
7. Revision History
Rev.
Date
Description
1.00
Aug 25, 2017
Applied new formatting.
Added Related Literature section.
Updated Ordering information table.
Update Absolute Maximum Ratings minimum values for Supply Voltage, OUTA, OUTB, and Signal Pins.
Added Note 3. Moved Note 7 to end of EC table.
Moved Pin Descriptions to table following Pin Configuration.
Updated the Soft-Start Operation section on page 11.
Added Revision History and About Intersil sections.
Updated POD M8.118 to the latest revision. The updates are as follows:
-Updated to new POD template. Added land pattern.
-Corrected lead width dimension in side view 1 from “0.25 - 0.036” to “0.25 - 0.36”.
Updated POD M8.15 to the latest revision. The updates are as follows:
-Changed in Typical Recommended Land Pattern the following:
2.41(0.095) to 2.20(0.087)
0.76 (0.030) to 0.60(0.023)
0.200 to 5.20(0.205)
-Changed Note 1 “1982” to “1994”
FN6554 Rev.1.00
Aug 25, 2017
Page 24 of 27
ISL6744A
8. Package Outline Drawing
For the most recent package outline drawing, see M8.118.
8. Package Outline Drawing
M8.118
8 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE
Rev 4, 7/11
5
3.0±0.05
A
8
DETAIL "X"
D
1.10 MAX
SIDE VIEW 2
0.09 - 0.20
4.9±0.15
3.0±0.05
5
0.95 REF
PIN# 1 ID
1
2
B
0.65 BSC
GAUGE
PLANE
TOP VIEW
0.25
3°±3°
0.55 ± 0.15
DETAIL "X"
0.85±010
H
C
SEATING PLANE
0.10 C
0.25 - 0.36
0.10 ± 0.05
0.08
C A-B D
M
SIDE VIEW 1
(5.80)
NOTES:
1. Dimensions are in millimeters.
(4.40)
(3.00)
2. Dimensioning and tolerancing conform to JEDEC MO-187-AA
and AMSEY14.5m-1994.
3. Plastic or metal protrusions of 0.15mm max per side are not
included.
(0.65)
4. Plastic interlead protrusions of 0.15mm max per side are not
included.
(0.40)
(1.40)
5. Dimensions are measured at Datum Plane "H".
6. Dimensions in ( ) are for reference only.
TYPICAL RECOMMENDED LAND PATTERN
FN6554 Rev.1.00
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ISL6744A
8. Package Outline Drawing
M8.15
For the most recent package outline drawing, see M8.15.
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
Rev 4, 1/12
DETAIL "A"
1.27 (0.050)
0.40 (0.016)
INDEX
AREA
6.20 (0.244)
5.80 (0.228)
0.50 (0.20)
x 45°
0.25 (0.01)
4.00 (0.157)
3.80 (0.150)
8°
0°
1
2
3
0.25 (0.010)
0.19 (0.008)
SIDE VIEW “B”
TOP VIEW
2.20 (0.087)
1
8
SEATING PLANE
0.60 (0.023)
1.27 (0.050)
1.75 (0.069)
5.00 (0.197)
4.80 (0.189)
2
3
7
6
1.35 (0.053)
-C-
4
5
0.25(0.010)
0.10(0.004)
1.27 (0.050)
0.51(0.020)
0.33(0.013)
5.20(0.205)
SIDE VIEW “A
TYPICAL RECOMMENDED LAND PATTERN
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1994.
2. Package length does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
3. Package width does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
4. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
5. Terminal numbers are shown for reference only.
6. The lead width as measured 0.36mm (0.014 inch) or greater above the
seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch).
7. Controlling dimension: MILLIMETER. Converted inch dimensions are not
necessarily exact.
8. This outline conforms to JEDEC publication MS-012-AA ISSUE C.
FN6554 Rev.1.00
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Page 26 of 27
ISL6744A
9. About Intersil
9. About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The
company's products address some of the largest markets within the industrial and infrastructure, mobile computing,
and high-end consumer markets.
For the most updated datasheet, application notes, related documentation, and related parts, see the respective product
information page found at www.intersil.com.
For a listing of definitions and abbreviations of common terms used in our documents, visit:
www.intersil.com/glossary.
You can report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support.
© Copyright Intersil Americas LLC 2007-2017. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice,
provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned
to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no
responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN6554 Rev.1.00
Aug 25, 2017
Page 27 of 27
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