UPD16886MA-6A5-E1-A [RENESAS]
IC,MOTOR CONTROLLER,MOS,TSSOP,24PIN;
| 型号： | UPD16886MA-6A5-E1-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | IC,MOTOR CONTROLLER,MOS,TSSOP,24PIN 电动机控制 光电二极管 |
| 文件： | 总18页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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4.
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16886
MONOLITHIC 1.5-CHANNEL H BRIDGE DRIVER CIRCUIT FOR CAMERAS
DESCRIPTION
The µPD16886 is a monolithic H bridge driver LSI that employs N-channel MOSFETs in its output stage.
This IC incorporates a 1.5-channel H bridge circuit and can control two motors that do not operate at the same
time. In addition, forward/reverse, brake, and stop functions are available, making this LSI ideal for driving motors
such as the motor for winding the camera film and the lens zoom motor.
FEATURES
{ Large output current
ID(DC) = 1.0 A
ID(pulse) = 2.8 A
ID(pulse) = 2.2 A
During continuous operation
PW ≤ 20 ms, during single operation
PW ≤ 200 ms, during single operation
{ On-chip 1.5-channel H bridge circuit
{ Low on-resistance RON = 0.5 Ω max. Sum of the top and bottom on-resistance, total temperature range
{ On-chip standby circuit to set the charge pump circuit to OFF
{ Low-voltage operation is possible (operable at 2.7 V or higher)
{ On-chip undervoltage lockout circuit
{ Mounted in a small-scale package
ORDERING INFORMATION
Part Number
24-pin plastic TSSOP
Package
µPD16886MA-6A5
24-pin plastic TSSOP (5.72 mm (225))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S14844EJ2V0DS00 (2nd edition)
Date Published May 2002 N CP(K)
Printed in Japan
2002
©
µPD16886
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C: MOUNTED ON GLASS EPOXY BOARD 100 mm × 100 mm × 1 mm, COPPER FILM AREA: 15%)
Parameter
Symbol
Conditions
Ratings
−0.5 to +6.0
−0.5 to +4.0
−0.5 to +6.0
8.0
Unit
Supply voltage
VDD
V
VM
When charge pump operating
At VG external input
V
VG pin apply voltage
Input voltage
VG
At VG external input
V
V
VIN
−0.5 to VDD + 0.5
1.0
Output current (DC)
Output current (pulse)
Output current (pulse)
Power consumption
Peak junction temperature
Storage temperature
ID(DC)
ID(pulse)
ID(pulse)
PT
During successive operation
PW < 20 ms, single pulse
PW < 200 ms, single pulse
A
2.8
A
2.2
A
0.7
W
°C
°C
TJ(MAX)
Tstg
150
−55 to +150
RECOMMENDED OPERATING CONDITIONS
(TA = 25°C: MOUNTED ON GLASS EPOXY BOARD 100 mm × 100 mm × 1 mm, COPPER FILM AREA: 15%)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply voltage
VDD
2.7
5.5
V
VM
1.6
3.6
V
VG pin apply voltage
VG
VM + 3.5
7.5
V
Output current (DC)
ID(DC)
ID(pulse)
ID(pulse)
C1 to C3
TA
During successive operation
PW < 20 ms, single pulse
PW < 200 ms, single pulse
0.8
A
Output current (pulse)
2.5
A
Output current (pulse)
2.0
A
Charge pump capacitor capacitance
Operating ambient temperature
Peak junction temperature
0.01
µF
°C
°C
−20
+75
125
TJ(MAX)
ELECTRICAL SPECIFICATIONS (UNLESS OTHERWISE SPECIFIED, TA = 25°C, VDD = VM = 3.0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
mA
µA
µA
V
VDD pin current
IDD
STB = VDD
2.0
IDD(STB)
IMOFF
VIH
STB = GND
1.0
VM pin current in off state
Input voltage, high
Control pin at low level
1.0
1.8
VDD
0.8
Input voltage, low
VIL
V
Input pull-down resistor
Output on-resistance
RIND
RON
200
kΩ
Ω
−20°C ≤ TA ≤ 75°C
ID = 0.8 A
0.35
0.5
C1 = C2 = C3 = 0.01 µF
Low voltage detection voltage
Charge pump circuit turn-on time
H bridge circuit turn-on time
H bridge circuit turn-off time
VDDS
tONC
tON
0.8
2.5
1.0
5.0
5.0
V
C1 = C2 = C3 = 0.01 µF
ID = 0.8 A, see Figures 1 and 2
ms
µs
µs
tOFF
The output is high impedance during low-voltage detection.
.
The VG pin voltage when using the charge pump is VG
=
VM + 3.6 V.
.
Data Sheet S14844EJ2V0DS
2
µPD16886
Figure 1. Charge Pump Characteristics Waveform
50%
STB
tONC
VM + 3.6 V (reference)
90%
VG
Figure 2. Switching Characteristics Waveform
50%
50%
IN
t
ON
t
OFF
50%
50%
I
M
Data Sheet S14844EJ2V0DS
3
µPD16886
BLOCK DIAGRAM
VDD
C1H
C1L
C2H
C2L
VG
Oscillator
Charge pump
circuit
VM
BGR
circuit
UVLO
STB
OUT1
OUT2
MOS
H-bridge
circuit
IN1
IN2
Level shifter
Controller
OUT3
IN3
LGND
PGND
PIN CONFIGURATION
V
M
1
24
23
22
21
20
19
18
17
16
15
14
13
N.C.
C
2L
2
PGND
OUT3
N.C.
C
2H
3
C
1L
4
C
1H
5
VM
V
G
6
N.C.
LGND
STB
IN1
7
OUT2
PGND
OUT1
8
9
IN2
10
11
12
V
M
IN3
N.C.
N.C.
VDD
Pin No. Pin Name
Pin Function
Pin No. Pin Name
Pin Function
1
2
VM
Motor block supply voltage pin
Charge pump capacitor connection pin
Charge pump capacitor connection pin
Charge pump capacitor connection pin
Charge pump capacitor connection pin
Gate voltage input pin
13
14
15
16
17
18
19
20
21
22
23
24
N.C.
N.C.
VM
Unused pin
Unused pin
C2L
3
C2H
C1L
Motor block supply voltage pin
H bridge output pin
Output block GND pin
H bridge output pin
Unused pin
4
OUT1
PGND
OUT2
N.C.
VM
5
C1H
VG
6
7
LGND
STB
IN1
IN2
IN3
VDD
Control block GND pin
8
Standby pin
Motor block supply voltage pin
Unused pin
9
Input pin
N.C.
OUT3
PGND
N.C.
10
11
12
Input pin
H bridge output pin
Output block GND pin
Unused pin
Input pin
Control block supply voltage pin
Data Sheet S14844EJ2V0DS
4
µPD16886
FUNCTION TABLE (OUTPUT BLOCK CONNECTION)
V
M
SW1
SW3
SW5
LOAD1
LOAD2
OUT1
OUT2
OUT3
Forward
Forward
SW2
SW4
SW6
GND
(Truth Table)
Input Signal
IN2 IN3
Circuit Operation
1 ch forward
Current Route
IN1
L
STB
H
L
L
H
H
L
H
H
H
H
H
H
H
L
VM → OUT1 → LOAD1 → OUT2 → GND
VM → OUT2 → LOAD1 → OUT1 → GND
Only SW2 and SW4 are on
L
1 ch reverse
1 ch brake
2 ch forward
2 ch reverse
2 ch brake
Stopped
L
H
H
L
H
H
H
−
VM → OUT2 → LOAD2 → OUT3 → GND
VM → OUT3 → LOAD2 → OUT2 → GND
Only SW4 and SW6 are on
H
H
L
H
L
SW1 to SW6 are all off
−
−
−
Standby
Charge pump circuit stopped
Unused switches (example: SW1 and SW2 at 2 ch driving) are high impedance.
CHARACTERISTICS CURVES
PT vs. TA characteristics
1.0
0.8
0.7 W
178˚C/W
0.6
0.4
0.2
0
–10
0
20
40
60
80 100 120
Operating ambient temperature TA (˚C)
Data Sheet S14844EJ2V0DS
5
µPD16886
CHARACTERISTICS CURVES
I
DD vs. VDD characteristics
I
DD vs. T
A
characteristics
5
4
5
4
TA = 25˚C
VDD = 3 V
3
2
1
3
2
1
0
When operating
When operating
During standby
During standby
0
2
4
6
–40 –20
0
20
40
60
80
100
Supply voltage VDD (V)
Operating ambient temperature T
A
(˚C)
R
ON vs. V
M
characteristics
R
ON vs. T
A
characteristics
0.5
0.5
VM = 3 V
TA = 25˚C
0.45
0.45
0.4
0.35
0.3
0.4
0.35
0.3
0.25
0.25
0
1
2
3
4
–40
–20
0
20
40
60
80
100
Motor supply voltage V
M
(V)
Operating ambient temperature T
A
(˚C)
R
IND vs. T
A
characteristics
V
DDS vs. T characteristics
A
400
300
200
4
3
2
1
V
DD = 3 V
V
DD = 3 V
100
0
0
–40
–40
–20
0
20
40
60
80
100
–20
0
20
40
60
80
100
Operating ambient temperature T
A
(˚C)
Operating ambient temperature T
A
(˚C)
Data Sheet S14844EJ2V0DS
6
µPD16886
CHARACTERISTICS CURVES
V
IH, VIL vs. VDD characteristics
V
IH, VIL vs. T characteristics
A
3
2
1
3
2.5
2
VDD = 3 V
T = 25˚C
A
V
IH
V
IL
V
IH
IL
1.5
1
V
0.5
0
0
2
4
6
–40 –20
0
20
40
60
80
100
Supply voltage VDD (V)
Operating ambient temperature T
A
(˚C)
t
ON, tOFF vs. V
M
characteristics
t
ON, tOFF vs. T characteristics
A
5
4
5
4
µ
µ
VM = 3 V
T
A
= 25˚C
3
2
1
3
2
1
0
t
ON
t
ON
t
OFF
t
OFF
1
2
3
4
–40
–20
0
20
40
60
80
(˚C)
100
0
Motor supply voltage V
M
(V)
Operating ambient temperature T
A
t
ONC vs. T
A
characteristics
T
ONC vs. V characteristics
M
1
1
0.8
0.6
V
DD = 3 V
TA = 25˚C
0.8
0.6
0.4
0.2
0
0.4
0.2
–40
–20
0
20
40
60
80
100
0
1
2
3
4
Operating ambient temperature T
A
(˚C)
Motor supply voltage V
M
(V)
Data Sheet S14844EJ2V0DS
7
µPD16886
EXAMPLE OF STANDARD CONNECTION
(1) When charge pump used
µ
µ
µ
µ
µ
µ
Data Sheet S14844EJ2V0DS
8
µPD16886
(2) When VG is externally input
µ
µ
µ
Data Sheet S14844EJ2V0DS
9
µPD16886
PACKAGE DRAWING
24-PIN PLASTIC TSSOP (5.72 mm (225))
13
24
detail of lead end
F
G
R
P
L
S
12
1
E
H
I
A
J
A'
S
N
S
C
K
M
B
D
M
NOTE
ITEM MILLIMETERS
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
A
A'
B
C
D
E
F
6.65 0.10
6.5 0.1
0.575
0.5 (T.P.)
0.22 0.05
0.1 0.05
1.2 MAX.
1.0 0.05
6.4 0.1
4.4 0.1
1.0 0.1
0.145 0.025
0.5
G
H
I
J
K
L
0.10
M
N
0.08
+5°
3°
P
−3°
R
S
0.25
0.6 0.15
S24MA-50-6A5
Data Sheet S14844EJ2V0DS
10
µPD16886
RECOMMENDED SOLDERING CONDITIONS
The µPD16886 should be soldered and mounted under the following recommended conditions.
For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting
Technology Manual (C10535E). For soldering methods and conditions other than those recommended below,
contact an NEC sales representative.
Surface Mounting Type Soldering Conditions
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Package peak temperature: 235°C, Time: 30 seconds max. (at 210°C or higher),
Count: Three times or less, Exposure limit: None, Flux: Rosin-based flux with low
chlorine content (chlorine 0.2Wt% or below) is recommended
IR35-00-3
VP15-00-3
WS60-00-1
VPS
Package peak temperature: 215°C, Time: 40 seconds max. (at 200°C or higher), Count:
Three times or less, Exposure limit: None, Flux: Rosin-based flux with low chlorine
content (chlorine 0.2Wt% or below) is recommended
Wave soldering
Package peak temperature: 260°C, Time: 10 seconds max., Preheating temperature:
120°C or lower, Count: Once, Flux: Rosin-based flux with low chlorine content (chlorine
0.2Wt% or below) is recommended
Note Do not use different soldering methods together.
Data Sheet S14844EJ2V0DS
11
µPD16886
[MEMO]
Data Sheet S14844EJ2V0DS
12
µPD16886
[MEMO]
Data Sheet S14844EJ2V0DS
13
µPD16886
[MEMO]
Data Sheet S14844EJ2V0DS
14
µPD16886
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet S14844EJ2V0DS
15
µPD16886
•
The information in this document is current as of April, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
UPD17002CU
Microcontroller, 4-Bit, MROM, 8MHz, CMOS, PDIP48, 0.600 INCH, SHRINK, PLASTIC, DIP-48
NEC
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