RT5779A [RICHTEK]
暂无描述;型号: | RT5779A |
厂家: | RICHTEK TECHNOLOGY CORPORATION |
描述: | 暂无描述 |
文件: | 总20页 (文件大小:293K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
RT5779A/B
6V, 5A, 1.5MHz ACOTTM Synchronous Step-Down Converter
in TSOT-23-8 package
General Description
Features
5A Converter With Built-In 20mΩ/18mΩ Low RDS(ON)
Power FETs
The RT5779A/B is a simple, easy-to-use, 5Asynchronous
step-downDC-DC converter with an input supply voltage
range of 2.5V to 6V. The device build-in an accurate 0.6V
( 1.5%) reference voltage and can operate in 100% duty
cycle as a very low dropout voltage regulator. the
RT5779A/B integrates low RDS(ON) power MOSFETs to
achieve high efficiency and is available in TSOT-23-8 (FC)
package.
Input Supply Voltage Range : 2.5V to 6V
Output Voltage Range : 0.6V to 6V
Operates Up to 100% Duty Cycle
Advanced Constant On-Time (ACOTTM) Control
Ultrafast Transient Response
No Needs For External Compensations
Optimized for Low-ESR Ceramic Output Capacitors
0.6V 1.5% High-Accuracy Feedback Reference
Voltage
The RT5779A/B adopts Advanced Constant On-Time
(ACOTTM) control architecture to provide an ultrafast
transient response with few external components and to
operate in nearly constant switching frequency over the
line, load, and output voltage range. The RT5779A/B is
designed to operate at 1.5MHz fixed frequency. While
the RT5779A automatically enters power saving mode
(PSM) operation at light load to maintain high efficiency.
RT5779B operates in Forced PWM over the loading range,
that helps meet tight voltage regulation accuracy
requirements.
35μA Operation Quiescent Current (RT5779A)
Robust Over-Current Protection for Both FETs
Optional for Operation Modes :
Power Saving Mode (PSM) (RT5779A)
Forced PWM Mode (RT5779B)
Fixed Switching Frequency : 1.5MHz
Monotonic Start-Up for Pre-Biased Output
Individual Enable Control Input
Power Good Indicator
The RT5779A/B senses both FETs current for a robust
over-current protection. It prevents the device from the
catastrophic damage in output short circuit, over current
or inductor saturation. The individual enable control input
and power good indicator provides flexible system power
sequence control a built-in soft-start function prevents
inrush current during start-up. The device also includes
input under-voltage lockout, output under-voltage
protection, and over-temperature protection (thermal
shutdown) to provide safe and smooth operation in all
operating conditions.
Built-In Internally Fixed Soft-Start (Typ. 1.5ms)
100% Duty Cycle Mode
Internal Output Discharge
Input Under-Voltage Lockout (UVLO)
Output Under-Voltage Protection (UVP) with Hiccup
Mode
Over-Temperature Protection
Available in TSOT-23-8 (FC) Package
Simplified Application Circuit
L
V
IN
VIN
RT5779A/B
LX
FB
V
OUT
C
IN
R
PGOOD
R1
R2
C
OUT
PGOOD
Enable
PGOOD
EN
VOUT
AGND
PGND
Copyright 2017 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS5779A/B-00 October 2017
www.richtek.com
1
RT5779A/B
Ordering Information
RT5779A/B
Pin Configuration
(TOP VIEW)
Package Type
J8F : TSOT-23-8 (FC)
Lead Plating System
G : Green (Halogen Free and Pb Free)
8
7
2
6
3
5
4
PWM Operation Mode
A : Automatic PSM
B : Forced PWM
Note :
Richtek products are :
TSOT-23-8 (FC)
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
Marking Information
RT5779AGJ8F
Applications
WLANASIC Power / Storage (SSDand HDD)
28= : Product Code
28=DNN
DNN : Date Code
Mobile Phones and HandheldDevices
STB, Cable Modem, and xDSL Platforms
General Purpose for POL LV Buck Converter
RT5779BGJ8F
27= : Product Code
27=DNN
DNN : Date Code
Copyright 2017 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
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2
DS5779A/B-00 October 2017
RT5779A/B
Functional Pin Description
Pin No.
Pin Name
Pin Function
Open-drain power-good indication output. The power-good function is activated
after soft-start is finished.
1
PGOOD
Power input. The input voltage range is from 2.5V to 6V. Connect a suitable input
bypass capacitor (typically of greater than 10F) between this pin and PGND. The
bypass capacitor should be placed as close to the IC as possible.
2
VIN
Switch node between the internal switch and the synchronous rectifier. Connect
the output LC filter from this pin to the output load.
3
4
5
6
LX
Power ground. This pin, connected to analog ground, must be soldered to a large
PCB copper area for maximum power dissipation.
PGND
VOUT
AGND
Output voltage sense input. This pin is used to monitor and adjust output voltage
to enhance load transient regulation.
Analog ground. It provides a ground return path for the control circuitry and
internal reference.
Feedback voltage input. Connect this pin to the midpoint of the external feedback
resistive divider to set the output voltage of the converter to the desired regulation
level. The device regulates the FB voltage at a feedback reference voltage,
typically 0.6V.
7
8
FB
EN
Enable control input. A logic-high enables the converter; a logic-low forces the
device into shutdown mode.
Copyright 2017 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS5779A/B-00 October 2017
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3
RT5779A/B
Functional Block Diagram
EN
VOUT
TON
AGND
VIN
UVLO
OTP
Shutdown
Control
LX
Error Amplifier
Comparator
+
-
+
+
-
FB
Logic
Control
LX
Driver
Current
Limit
Detector
LX
V
REF
Ramp
Generator
PGOOD
+
-
LX
AZC
FB
PGND
Operation
The RT5779A/B is a low-voltage, high-efficiency,
synchronous step-downDC-DC converter that can deliver
up to 5A output current from a 2.5V to 6V input supply.
The RT5779A/B adoptsACOTTM control mode, which can
reduce the output capacitance and provide ultrafast
transient responses, and allow minimal component sizes
without any additional external compensation network. The
device includes a built-in ramp voltage generator, which
takes up the virtual inductor current as an input. With the
internal ramp signal, the device can be compensated to
achieve good stability even with low-ESR ceramic
capacitors, since the need for the output capacitor's ESR
to generate an ESR ramp voltage can be eliminated.
is below the current limit ILIM_L. During the on-time, the
high-side switch is turned on and the inductor current
ramps up linearly. After the on-time, the high-side switch
is turned off and the synchronous rectifier is turned on
and the inductor current ramps down linearly. If the output
voltage has not reached its nominal level, another on-time,
however, can only be generated after a short blanking time,
or called minimum off-time, which is triggered by the
minimum-off-time one-shot generator. It is to prevent
another immediate on-time being triggered during the noisy
switching time and allow the feedback voltage and current
sense signals to settle. The minimum off-time tOFF_MIN is
kept short so that the inductor current can be raised up
quickly by rapidly repeated on-times when needed. Such
feature makes reaction speed of the ACOT-based
converters to load transients extremely fast.
Low VIN ACOTTM One-Shot Operation
For a low VIN ACOT converter, a built-in error amplifier is
used to keep track of the feedback voltage, as shown in
the Functional Block Diagram. In steady state, the error
amplifier compares the feedback voltage VFB and an
internal reference voltage. If the virtual inductor current
ramp voltage is lower than the output of the error amplifier,
a new pre-determined fixed on-time will be triggered by
the on-time one-shot generator, provided that minimum-
off-time one-shot is cleared and the measured inductor
current through the synchronous rectifier (low-side switch)
Enable Control
The RT5779A/B provides an EN pin, as an external chip
enable control, to enable or disable the device. If VEN is
held below a logic-low threshold voltage (VENL) of the
enable input (EN), the converter will enter into shutdown
mode, that is, the converter is disabled and switching is
inhibited even if the VIN voltage is above VIN under-voltage
lockout threshold (VUVLO). During shutdown mode, the
Copyright 2017 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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4
DS5779A/B-00 October 2017
RT5779A/B
supply current can be reduced to ISHDN (1μA or below). If
the EN voltage rises above the logic-high threshold voltage
(VENH) while the VIN voltage is higher than UVLO threshold
(VUVLO), the device will be turned on, that is, switching
being enabled and soft-start sequence being initiated.
the low-side current limit.
If the output load current exceeds the available inductor
current (clamped by the above-mentioned low-side current
limit), the output capacitor needs to supply the extra
current such that the output voltage will begin to drop. If it
drops below the output under-voltage protection trip
threshold, the IC will stop switching to avoid excessive
heat.
Input Under-Voltage Lockout
In addition to the EN pin, the RT5779A/B also provides
enable control through the VIN pin. It features an under-
voltage lockout (UVLO) function that monitors the internal
linear regulator (VCC). If VEN rises above VENH first,
switching will still be inhibited until the VIN voltage rises
above VUVLO. It is to ensure that the internal regulator is
ready so that operation with not-fully-enhanced internal
MOSFET switches can be prevented. After the device is
powered up, if the input voltage VIN goes below the UVLO
falling threshold voltage (VUVLO − ΔVUVLO), this switching
will be inhibited; if VIN rises above the UVLO-rising
threshold (VUVLO), the device will resume switching.
Output Under-Voltage Protection
The RT5779A/B includes output under-voltage protection
(UVP) against over-load or short-circuited condition by
constantly monitoring the feedback voltage VFB. If VFB
drops below the under-voltage protection trip threshold
(typically 50% of the internal reference voltage), the UV
comparator will go high to turn off both the internal high-
side and low-side MOSFET switches.
Hiccup Mode
If the output under-voltage condition continues for a period
of time, the RT5779A/B will enter output under-voltage
protection with hiccup mode. During hiccup mode, the
device remains shut down. After a period of time, a soft-
start sequence for auto-recovery will be initiated. Upon
completion of the soft-start sequence, if the fault condition
is removed, the converter will resume normal operation;
otherwise, such cycle for auto-recovery will be repeated
until the fault condition is cleared. Hiccup mode allows
the circuit to operate safely with low input current and
power dissipation, and then resume normal operation as
soon as the over-load or short-circuit condition is removed.
Over-Current Protection
The RT5779A/B is protected from over current conditions
by cycle-by-cycle current limiting on both the high-side
MOSFET and the low-side MOSFET. The robust over
current protection mechanism prevents the converter to
be damaged from a catastrophic condition, i.e. the inductor
is shorted or saturated.
High-Side MOSFET Over-Current Protection
The device senses high-side current after a deglitch time
when the high-side MOSFET is turned-on. Each cycle
when the sensed current is higher than the high-side switch
peak current limit threshold, ILIM_H, then the device enters
high side over current protection. At the same time, the
high-side MOSFET is turned off and the low-side MOSFET
is turned on.
Soft-Start (SS)
The soft-start function is used to prevent large inrush
currents while the converter is being powered up. The
RT5779A/B provides an internal soft-start feature for inrush
control.During the start-up sequence, the internal capacitor
is charged by an internal current source ISS to generate a
soft-start ramp voltage as a reference voltage to an error
amplifier. The device will initiate switching and the output
voltage will smoothly ramp up to its targeted regulation
voltage only after this ramp voltage is greater than the
feedback voltage VFB to ensure the converters have a
smooth start-up. The typical soft-start time is 1.5ms.
Low-Side MOSFET Over-Current Protection
The RT5779A/B detects low side current after a minimum-
off time while the low-side MOSFET is turned on. If the
detected low-side current is higher than the low-side switch
valley current limit threshold, ILIM_L, the on-time one-shot
will be inhibited until the inductor current ramps down to
the current limit level (ILIM). That is, another on-time can
only be triggered when the inductor current goes below
Copyright 2017 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS5779A/B-00 October 2017
www.richtek.com
5
RT5779A/B
Power Good Indication
The RT5779A/B provides a power-good (PGOOD) open-
drain output pin. It is to be connected to an external voltage
source through a pull-up resistor. The power-good function
is activated after soft-start is finished and is controlled by
a comparator connected to the feedback signal VFB. If
VFB rises above a power-good threshold (VTH_PGLH
)
(typically 95% of the target value), the PGOOD pin will be
in high impedance and VPGOOD will be held high after a
certain delay elapsed. When VFB drops by a power-good
hysteresis (ΔVTH_PGLH) (typically 5% of the target value)
or exceeds VTH_PGHL (typically 110% of the target value),
the PGOOD pin will be pulled low. For VFB higher than
VTH_PGHL, VPGOOD can be pulled high again if VFB drops
back by a power-good hysteresis (ΔVTH_PGHL) (typically
5% of the target value). Once being started-up, if any
internal protection is triggered, PGOOD will be pulled low
toGND.
Over-Temperature Protection (Thermal Shutdown)
The RT5779A/B includes an over-temperature protection
(OTP) circuitry to prevent overheating due to excessive
power dissipation. The OTP will shut down switching
operation when junction temperature exceeds a thermal
shutdown threshold TSD. Once the junction temperature
cools down by a thermal shutdown hysteresis (ΔTSD), the
IC will resume normal operation with a complete soft-start.
Copyright 2017 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
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6
DS5779A/B-00 October 2017
RT5779A/B
Absolute Maximum Ratings (Note 1)
Supply Input Voltage, VIN ----------------------------------------------------------------------------------------- −0.3V to 7V
LX Pin Switch Voltage ---------------------------------------------------------------------------------------------- −0.3V to (VIN + 0.3V)
<10ns ------------------------------------------------------------------------------------------------------------------ −5V to 8.5V
Other Pins------------------------------------------------------------------------------------------------------------- −0.3V to (VIN + 0.3V)
PowerDissipation, PD @ TA = 25°C
TSOT-23-8 (FC) ------------------------------------------------------------------------------------------------------ 1.46W
Package Thermal Resistance (Note 2)
TSOT-23-8 (FC), θJA ------------------------------------------------------------------------------------------------- 68.2°C/W
TSOT-23-8 (FC), θJC ------------------------------------------------------------------------------------------------ 17.1°C/W
Junction Temperature ----------------------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------- 260°C
Storage Temperature Range -------------------------------------------------------------------------------------- −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model)---------------------------------------------------------------------------------------- 2kV
Recommended Operating Conditions (Note 4)
Supply Input Voltage, VIN ----------------------------------------------------------------------------------------- 2.5V to 6V
Junction Temperature Range-------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range-------------------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 5V, TA = 25°C, unless otherwise specified)
Parameter
Supply Voltage
Symbol
Test Conditions
Min
Typ
Max Unit
Input Operating Voltage
VIN
2.5
--
6
V
Under-Voltage Lockout
Threshold
VUVLO
2.15
2.3
2.45
Under-Voltage Lockout
Threshold Hysteresis
∆VUVLO
ISHDN
IQ
--
260
--
mV
A
A
Shutdown Current
Quiescent Current
Enable Voltage
VEN = 0V
RT5779A
RT5779B
--
--
--
0
1
50
--
35
600
VENH
VENL
VEN rising
1.2
--
--
--
--
0.4
--
Enable Threshold Voltage
V
VEN falling
EN = 2V
V
--
1.5
0
Enable Input Current
IIH
A
VEN = 0V
--
--
Feedback Voltage
Feedback Input Current
Feedback Voltage
IFB
VFB = 0.6V
--
10
--
nA
V
VFB
0.588 0.6 0.612
Copyright 2017 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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7
RT5779A/B
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Current Limit
High-Side Switch Peak
Current Limit
ILIM_H
--
--
9.7
7
--
--
A
Low-Side Switch Valley
Current Limit
ILIM_L
Switching
Switching Frequency
fSW
VOUT = 1.2V
1300 1500 1700
kHz
ns
Minimum Off-Time
Internal MOSFET
High-Side On-Resistance
Low-Side On-Resistance
Soft-Start
tOFF_MIN
--
60
--
RDS(ON)_H
RDS(ON)_L
--
--
20
18
--
--
m
Fixed Soft-Start Time
VOUT
tSS
1
1.5
1
--
--
ms
Output Discharge Resistor
Power Good
(Note 5)
--
k
Power-Good High Threshold VTH_PGLH
VFB rising. PGOOD goes high
--
--
--
--
--
95
5
--
--
--
--
--
%VFB
%VFB
%VFB
%VFB
s
Power-Good High Hysteresis VTH_PGLH VFB falling. PGOOD goes low
Power-Good Low Threshold VTH_PGHL VFB rising. PGOOD goes low
110
5
Power-Good Low Hysteresis VTH_PGHL VFB falling. PGOOD goes high
Power Good Delay Time
15
Power Good Sink Current
IPGOOD sinks 1mA
Capability
--
--
--
0.4
--
V
Power Good Internal Pull Up
Resistance
550
k
Over-Temperature Protection
Thermal Shutdown
TSD
--
--
150
30
--
--
C
Thermal Shutdown
Hysteresis
∆TSD
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a four-layer Richtek Evaluation Board for TSOT-23-8 (FC).
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. Guarantee by design.
Copyright 2017 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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DS5779A/B-00 October 2017
RT5779A/B
Typical Application Circuit
L
0.47µH
V
3
7
2
V
IN
OUT
VIN
LX
FB
2.5V to 6V
1.2V/5A
C
22µF
IN
C
44µF
R
OUT
PGOOD
100k
R1
RT5779A/B
20k
1
8
PGOOD
Enable
PGOOD
EN
R2
20k
5
VOUT
PGND
4
AGND
6
Table 1. Suggested Component Values
R1 (k)
13.3
20
R2 (k)
20
L (H)
0.33
0.47
0.47
0.47
0.47
VOUT (V)
1
COUT (F)
44
44
44
44
44
1.2
20
1.8
40.2
63.4
90.9
20
2.5
20
3.3
20
Note : All the input and output capacitances are the suggested values, which refer to the effective capacitances, and are subject
to any de-rating effect, like a DC bias.
Copyright 2017 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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RT5779A/B
Typical Operating Characteristics
Efficiency vs. Output Current
Efficiency vs. Output Current
100
100
90
80
70
60
50
40
30
20
10
0
90
80
VOUT = 3.3V
VOUT = 2.5V
VOUT = 3.3V
70
60
50
40
30
20
10
0
V
V
OUT = 2.5V
OUT = 1.8V
V
V
OUT = 1.8V
OUT = 1.2V
VOUT = 1.2V
OUT = 1V
VOUT = 1V
V
RT5779A, VIN = 5V
10
RT5779B, VIN = 5V
4
0.001
0.01
0.1
1
0
1
2
3
5
5
6
Output Current (A)
Output Current (A)
Output Voltage vs. Output Current
Output Voltage vs. Output Current
1.32
1.30
1.28
1.26
1.24
1.22
1.20
1.18
1.16
1.14
1.12
1.10
1.08
3.40
3.38
3.36
3.34
3.32
3.30
3.28
3.26
3.24
3.22
3.20
VIN = 6V
VIN = 6V
IN = 2.5V
VIN = 3.6V
V
RT5779A, VOUT = 1.2V
RT5779A, VOUT = 3.3V
0
1
2
3
4
5
0
1
2
3
4
Output Current (A)
Output Current (A)
Output Voltage vs. Input Voltage
Output Voltage vs. Input Voltage
1.32
1.30
1.28
1.26
1.24
1.22
1.20
1.18
1.16
1.14
1.12
1.10
1.08
3.40
3.38
3.36
3.34
3.32
3.30
3.28
3.26
3.24
3.22
3.20
IOUT = 0A
IOUT = 5A
IOUT = 0A
IOUT = 5A
RT5779A, VOUT = 1.2V
RT5779A, VOUT = 3.3V
2.5
3
3.5
4
4.5
5
5.5
6
3.5
4
4.5
5
5.5
Input Voltage (V)
Input Voltage (V)
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DS5779A/B-00 October 2017
RT5779A/B
UVLO vs. Temperature
EN Voltage Threshold vs. Temperature
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
Rising
Rising
Falling
Falling
RT5779A/B
RT5779A/B
100 125
-50
-25
0
25
50
75
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature (°C)
Load Transient Response
Load Transient Response
RT5779A, VIN = 5V, VOUT = 3.3V,
IOUT = 0A to 5A to 0A
VOUT
(20mV/Div)
VOUT
(40mV/Div)
RT5779B, VIN = 5V, VOUT = 3.3V,
IOUT = 0A to 5A to 0A
LX
(5V/Div)
LX
(4V/Div)
IOUT
(3.5A/Div)
IOUT
(3.5A/Div)
Time (200μs/Div)
Time (400μs/Div)
Load Transient Response
Load Transient Response
RT5779A, VIN = 5V,
RT5779B, VIN = 5V, VOUT = 1.2V,
IOUT = 0A to 5A to 0A
VOUT = 1.2V, IOUT = 0A to 5A to 0A
VOUT
(20mV/Div)
VOUT
(20mV/Div)
LX
(4V/Div)
LX
(4V/Div)
IOUT
(3.5A/Div)
IOUT
(3.5A/Div)
Time (400μs/Div)
Time (200μs/Div)
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is a registered trademark of Richtek Technology Corporation.
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RT5779A/B
Application Information
The output stage of a synchronous buck converter is
composed of an inductor and capacitor, which stores and
delivers energy to the load, and forms a second-order low-
pass filter to smooth out the switch node voltage to maintain
a regulated output voltage.
and the approximate inductance can be calculated by the
selected input voltage, output voltage, switching frequency
(fSW), and inductor current ripple (ΔIL), as below :
V
V V
IN OUT
OUT
L =
V f
IN SW
I
L
Once the inductance is chosen, the inductor ripple current
(ΔIL) and peak inductor current (IL_PEAK) can be calculated,
as below :
100% Duty-Cycle
When the input voltage drops, these Buck converters
gradually increase the duty-cycle and will continuously
switch-on the high side MOSFET when the input voltage
drops below the regulated output voltage. This function is
especially suitable in battery powered applications, and
can extend application operation time when the battery is
almost depleted.
VOUT VIN VOUT
IL=
V fSW L
IN
1
2
IL_PEAK = IOUT_MAX
IL
1
2
IL_VALLEY = IOUT_MAX
IL
where IOUT_MAX is the maximum rated output current or
the required peak current.
Inductor Selection
When designing the output stage of the synchronous buck
converter, it is recommended to start with the inductor.
However, it may require several iterations because the
exact inductor value is generally flexible and is optimized
for low cost, small form factor, and high overall performance
of the converter. Further, inductors vary with manufacturers
in both material and value, and typically have a tolerance
of 20%.
The inductor must be selected to have a saturation current
and thermal rating which exceed the required peak inductor
current IL_PEAK. For a robust design to maintain control of
inductor current in overload or short-circuit conditions,
some applications may desire inductor saturation current
rating up to the high-side switch current limit of the device.
However, the built-in output under-voltage protection (UVP)
feature makes this unnecessary for most applications.
Three key inductor parameters to be specified for operation
with the device are inductance (L), inductor saturation
current (ISAT), and DC resistance (DCR), which affects
performance of the output stage. An inductor with lower
DCR is recommended for applications of higher peak
current or load current, and it can improve system
performance. Lower inductor values are beneficial to the
system in physical size, cost, DCR, and transient
response, but they will cause higher inductor peak current
and output voltage ripple to decrease system efficiency.
Conversely, higher inductor values can increase system
efficiency at the expense of larger physical size, slower
transient response due to the longer response time of the
inductor. Agood compromise among size, efficiency, and
transient response can be achieved by setting an inductor
current ripple (ΔIL) of about 20% to 50% of the desired full
output load current. To meet the inductor current ripple
(ΔIL) requirements, a minimum inductance must be chosen
IL_PEAK should not exceed the minimum value of the
device's high-side switch current limit because the device
will not be able to supply the desired output current. By
reducing the inductor current ripple (ΔIL) to increase the
average inductor current (and the output current), IL_PEAK
can be lowered to meet the device current limit
requirement.
For best efficiency, a low-loss inductor having the lowest
possible DCR that still fits in the allotted dimensions will
be chosen. Ferrite cores are often the best choice.
However, a shielded inductor, possibly larger or more
expensive, will probably give fewer EMI and other noise
problems.
The following design example is illustrated to walk through
the steps to apply the equations defined above. The
RT5779A/B's TypicalApplication Circuit for output voltage
of 1.2V at maximum output current of 5A and an input
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voltage of 5V with inductor current ripple of 1.2A (i.e. 24%,
in the recommended range of 20% to 50%, of the
maximum rated output current) is taken as the design
example. The approximate minimum inductor value can
first be calculated as below :
usually occurs at 50% duty cycle, that is, VIN = 2 x VOUT.
The maximum IRMS as IRMS (Max), can be approximated
,
as 0.5 x IOUT_MAX, where IOUT_MAX is the maximum rated
output current. Besides, the variation of the capacitance
value with temperature, DC bias voltage, switching
frequency, and allowable peal-to-peak ripple voltage that
reflects back to the input, also need to be taken into
consideration. For example, the capacitance value of a
capacitor decreases as the DC bias across the capacitor
increases; also, higher switching frequency allows the use
of input capacitors of smaller capacitance values.
1.2 5 1.2
51500kHz1.2A
L =
= 0.5μH
where fSW is 1500kHz. The inductor current ripple will be
set at 1.2A, as long as the calculated inductance of 0.5μH
is used. However, the inductor of the exact inductance
value may not be readily available, and therefore an inductor
of a nearby value will be chosen. In this case, 0.47μH
inductance is available and actually used in the Typical
Application Circuit. The actual inductor current ripple (ΔIL)
and required peak inductor current (IL_PEAK) can be
calculated as below :
Ceramic capacitors are most commonly used to be placed
right at the input of the converter to reduce ripple voltage
amplitude because only ceramic capacitors have
extremely low ESR which is required to reduce the ripple
voltage. Note that the capacitors need to be placed as
close as to the input pins as possible for highest
effectiveness. Ceramic capacitors are preferred also due
to their low cost, small size, high RMS current ratings,
robust inrush surge current capabilities, and low parasitic
inductance, which helps reduce the high-frequency ringing
on the input supply.
1.2 5 1.2
51500kHz0.47μH
IL=
= 1.294A
1
2
1.294
IL_PEAK = IOUT_MAX
IL = 5 +
= 5.647A
2
For the 0.47μH inductance value, the inductor saturation
current and thermal rating should exceed 5.647A.
However, care must be taken when ceramic capacitors
are used at the input, and the input power is supplied by
a wall adapter, connected through a long and thin wire.
When a load step occurs at the output, a sudden inrush
current will surge through the long inductive wire, which
can induce ringing at the device's power input and
potentially cause a very large voltage spike at the VIN pin
to damage the device. For applications where the input
power is located far from the device input, it may be required
that the low-ESR ceramic input capacitors be placed in
parallel with a bulk capacitor of other types, such as
tantalum, electrolytic, or polymer, to dampen the voltage
ringing and overshoot at the input, caused by the long
input power path and input ceramic capacitor.
Input Capacitor Selection
Input capacitors are needed to smooth out the RMS ripple
current (IRMS) imposed by the switching currents and
drawn from the input power source, by reducing the ripple
voltage amplitude seen at the input of the converters. The
voltage rating of the input filter capacitors must be greater
than the maximum input voltage. It's also important to
consider the ripple current capabilities of capacitors.
The RMS ripple current (IRMS) of the regulator can be
determined by the input voltage (VIN), output voltage
(VOUT), and rated output current (IOUT) as the following
equation :
V
V
V
IN
V
OUT
OUT
I
= I
1
RMS
OUT
It is suggested to choose capacitors with higher
temperature ratings than required. Several ceramic
capacitors may be parallel to meet application
requirements, such as the RMS current, size, and height.
The Typical Application Circuit can use one 22μF, or two
10μF and one high-frequency-noise-filtering 0.1μF low-ESR
ceramic capacitors at the input.
IN
From the above, the maximum RMS input ripple current
occurs at maximum output load, which will be used as
the requirements to consider the current capabilities of
the input capacitors. Furthermore, for a single phase buck
converter, the duty cycle is approximately the ratio of
output voltage to input voltage. The maximum ripple voltage
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RT5779A/B
Output Capacitor Selection :
capacitors with ESR of about 5mΩ as output capacitors,
the two output ripple components are as below :
Output capacitance affects the output voltage of the
converter, the response time of the output feedback loop,
and the requirements for output voltage sag and soar. The
sag occurs after a sudden load step current applied, and
the soar occurs after a sudden load removal. Increasing
the output capacitance reduces the output voltage ripple
and output sag and soar, while it increases the response
time that the output voltage feedback loop takes to respond
to step loads, Therefore, there is a tradeoff between output
capacitance and output response. It is recommended to
choose a minimum output capacitance to meet the output
voltage requirements of the converter, and have a quick
transient response to step loads.
VP-P_ESR = IL RESR = 1.294A5m = 6.47mV
IL
1.294A
844μF1500kHz
VP-P_C
=
=
8COUT fSW
ꢀꢀꢀꢀꢀ= 2.451mV
VP-P = VP-P_ESR VP-P_C= 8.921mV
Output Transient Undershoot and Overshoot
In addition to the output voltage ripple at the switching
frequency, the output capacitor and its ESR also affect
output voltage sag, which is undershoot on a positive
load step, and output voltage soar, which is overshoot
on a negative load step. With the built-in ACOTTM
architecture, the IC can have very fast transient
responses to the load steps and small output transients.
The ESR of the output capacitor affects the damping of
the output filter and the transient response. In general,
low-ESR capacitors are good choices due to their
excellent capability in energy storage and transient
performance. The RT5779A/B, therefore, is specially
optimized for ceramic capacitors. Consider also DC bias
and aging effects while selecting the output capacitor.
However, the combination of a small ceramic output
capacitor (that is, of little capacitance) and a low output
voltage (that is, only little charge stored in the output
capacitor), used in low-duty-cycle applications (which
require high inductance to get reasonable ripple currents
for high input voltages), causes an increase in the size
of voltage variations (i.e. sag/soar) in response to very
quick load changes. Typically, the load changes slowly,
compared with the IC's switching frequency. However,
for present-day applications, more and more digital
blocks may exhibit nearly instantaneous large transient
load changes. Therefore, in the following section, how
to calculate the worst-case voltage swings in response
to very fast load steps will be explained in details.
Output Voltage Ripple
The output voltage ripple at the switching frequency is
a function of the inductor current ripple going through
the output capacitor's impedance. To derive the output
voltage ripple, the output capacitor with capacitance,
COUT, and its equivalent series resistance, RESR, must
be taken into consideration. The output peak-to-peak
ripple voltage ΔVP-P, caused by the inductor current ripple
ΔIL, is characterized by two components, which are ESR
ripple ΔVP-P_ESR and capacitive ripple ΔVP-P_C, can be
expressed as below :
Both of the output transient undershoot and overshoot
have two components : a voltage step caused by the
output capacitor's ESR, and a voltage sag or soar due
to the finite output capacitance and the inductor current
slew rate. The following formulas can be used to check
if the ESR is low enough (which is usually not a problem
with ceramic capacitors) and if the output capacitance
is large enough to prevent excessive sag or soar on
very fast load steps, with the chosen inductor value.
VP-P = VP-P_ESR VP-P_C
VP-P_ESR = IL RESR
IL
VP-P_C
=
8COUT fSW
If ceramic capacitors are used as the output capacitors,
both the components need to be considered due to the
extremely low ESR and relatively small capacitance.
The voltage step (ΔVOUT_ESR ) caused by the ESR is a
function of the load step (ΔIOUT) and the ESR (RESR) of
the output capacitor, described as below :
For the RT5779A/B's Typical Application Circuit for
output voltage of 1.2V, and actual inductor current ripple
(ΔIL) of 1.294A, using two paralleled 22μF ceramic
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ΔVOUT_ESR = ΔIOUT x RESR
An external MOSFET can be added for the EN pin to be
logic-controlled, as shown in Figure 2. In this case, a
100kΩ pull-up resistor, REN, is connected between VIN
and the ENpin. The MOSFET Q1 will be under logic control
to pull down the EN pin. To prevent the device being
enabled when VIN is smaller than the VOUT target level
or some other desired voltage level, a resistive divider (REN1
and REN2) can be used to externally set the input under-
voltage lockout threshold, as shown in Figure 3.
The voltage amplitude (ΔVOUT_SAG) of the capacitive sag
is a function of the load step (ΔIOUT), the output capacitor
value (COUT), the inductor value (L), the input-to-output
voltage differential, and the maximum duty cycle (DMAX).
And, the maximum duty cycle during a fast transient
can be determined by the on-time (tON) and the minimum
off-time (tOFF_MIN) since the ACOTTM control scheme
will ramp the current during on-times, which are spaced
apart by a minimum off-time, that is, as fast as allowed.
The approximate on-time (neglecting parasitics) and
maximum duty cycle for a given input and output voltage
can be calculated according to the following equations :
R
EN
V
EN
RT5779A/B
IN
C
EN
GND
V
OUT
t
=
ON
V f
IN SW
Figure 1. Enable Timing Control
t
ON
D
MAX
=
t
t
OFF_MIN
ON
R
EN
Note the actual on-time will be slightly larger than the
calculated one as the IC will automatically adapt to
compensate the internal voltage drops, such as the
voltage across high-side switch due to on-resistance.
However, both of these can be neglected since the on-
time increase can compensate for the voltage drops.
The output voltage sag (ΔVOUT_SAG) can then be
100k
V
EN
RT5779A/B
GND
IN
Q1
Enable
Figure 2. Logic Control for the EN Pin
calculated as below :
R
EN1
2
V
IN
EN
L(I
)
OUT
V
=
OUT_SAG
2C
V D
V
R
EN2
OUT
IN
MAX OUT
RT5779A/B
GND
The voltage amplitude of the capacitive soar is a function
of the load step (ΔIOUT), the output capacitor value (COUT),
the inductor value (L), and the output voltage (VOUT).
And the output voltage soar (ΔVOUT_SOAR) can be
Figure 3. ResistorDivider for Under-Voltage
Lockout Threshold Setting
calculated as below :
2
L(I
2C
)
OUT
Output Voltage Setting
V
=
OUT_SOAR
V
OUT
OUT
The output voltage can be programmed by a resistive divider
from the output to ground with the midpoint connected to
the FB pin. The resistive divider allows the FB pin to sense
a fraction of the output voltage as shown in Figure 4. The
EN Pin for Start-Up and Shutdown Operation
For automatic start-up, the EN pin, with high-voltage rating,
can be connected to the input supply VIN, either directly
or through a 100kΩ resistor. The large built-in hysteresis
band makes the ENpin useful for simple delay and timing
circuits. The EN pin can be externally connected to VIN
by adding a resistor REN and a capacitor CEN, as shown in
Figure 1, to have an additional delay. The time delay can
be calculated with the EN's internal threshold, at which
switching operation begins.
output voltage is set according to the following equation :
R1
VOUT VTH_FB (1 +
)
R2
where VTH_FB is around 0.6V (Typ).
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RT5779A/B
V
package, the PCB layout, the rate of surrounding airflow,
and the difference between the junction and ambient
temperatures. The maximum power dissipation can be
calculated using the following formula :
OUT
R1
FB
RT5779A/B
R2
PD(MAX) = (TJ(MAX) − TA) / θJA
GND
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction-to-ambient
thermal resistance.
Figure 4. Output Voltage Setting
The placement of the resistive divider should be within
5mm of the FB pin. The resistance of R2 is suggested
between 10kΩ and 100kΩ to minimize power consumption
and noise pick-up at the FB pin. Once R2 is chosen, the
resistance of R1 can then be obtained as below :
For continuous operation, the maximum operating junction
temperature indicated under Recommended Operating
Conditions is 125°C. The junction-to-ambient thermal
resistance, θJA, is highly package dependent. For a TSOT-
23-8 (FC) package, the thermal resistance, θJA, is
68.2°C/W on a four-layer Richtek Evaluation Board. The
maximum power dissipation at TA = 25°C can be calculated
as below :
R2(V
V
)
OUT
TH_FB
R1
V
TH_FB
For better output voltage accuracy, the divider resistors
(R1 and R2) with 1% tolerance or better should be used.
PD(MAX) = (125°C − 25°C) / (68.2°C/W) = 1.46W for a
TSOT-23-8 (FC) package.
Power-Good Output
The PGOOD pin is an open-drain power-good indication
output and is to be connected to an external voltage source
through a pull-up resistor. The power-good function is
activated after soft-start is finished and is controlled by
the feedback signal VFB. During soft-start, PGOOD is
actively held low and only allowed to transition high after
soft-start is over. If VFB raises above a power-good
threshold (VTH_PGLH) (typically 95% of the target value),
the PGOODpin will be in high impedance and VPGOOD will
be held high after a certain delay elapsed. When VFB drops
by a power-good hysteresis (ΔVTH_PGLH) (typically 5% of
the target value) or exceeds VTH_PGHL (typically 110% of
the target value), the PGOOD pin will be pulled low. For
VFB above VTH_PGHL, VPGOOD will be pulled high again when
The maximum power dissipation depends on the operating
ambient temperature for the fixed TJ(MAX) and the thermal
resistance, θJA. The derating curves in Figure 5 allows
the designer to see the effect of rising ambient temperature
on the maximum power dissipation.
2.0
Four-Layer PCB
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VFB drops back by a power-good hysteresis (ΔVTH_PGHL
)
(typically 5% of the target value). Once being started-up,
if any internal protection is triggered, PGOODwill be pulled
low to GND.
0
25
50
75
100
125
Ambient Temperature (°C)
Thermal Considerations
Figure 5. Derating Curve of Maximum PowerDissipation
The junction temperature should never exceed the
absolute maximum junction temperature TJ(MAX), listed
under Absolute Maximum Ratings, to avoid permanent
damage to the device. The maximum allowable power
dissipation depends on the thermal resistance of the IC
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DS5779A/B-00 October 2017
RT5779A/B
Layout Considerations
Layout is very important in high frequency switching
converter design. The PCB can radiate excessive noise
and contribute to converter instability with improper layout.
Certain points must be considered before starting a layout
using the IC.
Make traces of the high current paths as short and wide
as possible.
Put the input capacitor as close as possible to the device
pins (VINandGND).
The LX node encounters high frequency voltage swings
so it should be kept in a small area. Keep sensitive
components away from the LX node to prevent stray as
possible.
The GND pin should be connected to a strong ground
plane for heat sinking and noise protection.
Avoid using vias in the power path connections that
have switched currents (from CIN to GND and CIN to
VIN) and the switching node (LX).
An TSOT-23-8 (FC)example of PCB layout guide is shown
in Figure 6 for reference.
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RT5779A/B
GND
GND
C
IN
V
IN
The input capacitor
must be placed as
close to the IC as
possible
EN
FB
PGOOD
R2
R1
VIN
LX
AGND
VOUT
LX should be connected to
inductor by wide and short trace.
Keep sensitive components away
from this trace.
PGND
L
C
OUT
V
OUT
The output capacitor must
be placed near the IC
Figure 6. TSOT-23-8 (FC) PCB LayoutGuide
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DS5779A/B-00 October 2017
RT5779A/B
Outline Dimension
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.700
0.000
1.397
0.220
2.591
2.692
0.585
0.080
0.300
Max.
1.000
0.100
1.803
0.380
3.000
3.099
0.715
0.254
0.610
Min.
0.028
0.000
0.055
0.009
0.102
0.106
0.023
0.003
0.012
Max.
A
A1
B
0.039
0.004
0.071
0.015
0.118
0.122
0.028
0.010
0.024
b
C
D
e
H
L
TSOT-23-8 (FC) Surface Mount Package
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RT5779A/B
Footprint Information
Footprint Dimension (mm)
Number of
Pin
Package
Tolerance
±0.10
P1
A
B
C
D
M
TSOT-28/TSOT-28(FC)/SOT-28
8
0.65
3.60
1.60
1.00
0.45
2.40
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Customers should obtain the latest relevant information and data sheets before placing orders and should verify
that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek
product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use;
nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Richtek or its subsidiaries.
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DS5779A/B-00 October 2017
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