SMMBT5401LT1 [ROCHESTER]
500mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN;
| 型号： | SMMBT5401LT1 |
| 厂家： | 
Rochester Electronics |
| 描述： | 500mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：773K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5401LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available
MAXIMUM RATINGS
COLLECTOR
3
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−150
−160
−5.0
Unit
Vdc
V
CEO
V
CBO
V
EBO
1
BASE
Vdc
Vdc
2
Collector Current − Continuous
I
C
−500
mAdc
EMITTER
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2L M
SOT−23 (TO−236)
CASE 318
Total Device Dissipation
FR−5 Board (Note 1)
P
D
225
mW
STYLE 6
T = 25°C
A
Derate Above 25°C
1.8
mW/°C
°C/W
2L = Device Code
= Month Code
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
M
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
T = 25°C
Derate Above 25°C
A
ORDERING INFORMATION
2.4
mW/°C
°C/W
†
Device
Shipping
Package
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
MMBT5401LT1
3000 Tape & Reel
3000 Tape & Reel
SOT−23
Junction and Storage Temperature
T , T
J
−55 to +150
°C
stg
MMBT5401LT1G
SOT−23
(Pb−Free)
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
MMBT5401LT3
10,000 Tape & Reel
10,000 Tape & Reel
SOT−23
MMBT5401LT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 4
MMBT5401LT1/D
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
−150
−160
−5.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = −120 Vdc, I = 0)
I
CES
−
−
−50
−50
nAdc
mAdc
CB
E
(V = −120 Vdc, I = 0, T = 100°C)
CB
E
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −1.0 mAdc, V = −5.0 Vdc)
50
60
50
−
240
−
C
CE
(I = −10 mAdc, V = −5.0 Vdc)
C
CE
(I = −50 mAdc, V = −5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.2
−0.5
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−
−
−1.0
−1.0
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
pF
−
T
(I = −10 mAdc, V = −10 Vdc, f = 100 MHz)
100
−
300
6.0
200
8.0
C
CE
Output Capacitance
C
obo
(V = −10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Small Signal Current Gain
h
fe
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
40
−
C
CE
Noise Figure
NF
dB
(I = −200 mAdc, V = −5.0 Vdc, R = 10 W, f = 1.0 kHz)
C
CE
S
http://onsemi.com
2
MMBT5401LT1
200
150
T = 125°C
J
100
25°C
−ꢀ55°C
0.3
70
50
V
V
= −1.0 V
= −5.0 V
CE
30
20
CE
0.1
0.2
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
3
10
V
= 30 V
CE
2
1
0
10
I
C
= I
CES
10
10
T = 125°C
J
75°C
−1
10
10
REVERSE
25°C
FORWARD
−2
−3
10
0.3 0.2 0.1
0
0.1 0.2 0.3 0.4
0.5 0.6 0.7
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
http://onsemi.com
3
MMBT5401LT1
1.0
0.9
2.5
2.0
T = 25°C
J
T = −55°C to 135°C
J
0.8
0.7
0.6
1.5
1.0
0.5
V
@ I /I = 10
C B
BE(sat)
q
q
for V
CE(sat)
VC
0
−0.5
−1.0
−1.5
0.5
0.4
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
for V
VB
BE(sat)
−2.0
−2.5
0.1 0.2
1.0 2.0 3.0 5.0
0.1 0.2
1.0 2.0 3.0 5.0
I , COLLECTOR CURRENT (mA)
0.3 0.5
10
20 30 50
100
0.3 0.5
10
20 30 50 100
I , COLLECTOR CURRENT (mA)
C
C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
100
70
T = 25°C
J
50
V
BB
V
CC
+ꢀ8.8 V
−30 V
30
20
10.2 V
C
ibo
100
3.0 k
R
C
V
in
10
7.0
5.0
V
out
0.25 mF
10 ms
INPUT PULSE
R
B
C
obo
5.1 k
100
3.0
2.0
t , t ≤ 10 ns
f
DUTY CYCLE = 1.0%
V
in
1N914
r
1.0
0.2
Values Shown are for I @ 10 mA
1.0
2.0 3.0
5.0 7.0
0.3
0.5 0.7
10
20
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
2000
I /I = 10
C B
t @ V = 120 V
CC
r
1000
700
T = 25°C
J
500
I /I = 10
C B
t @ V = 120 V
f CC
T = 25°C
J
300
200
500
t @ V = 30 V
r CC
t @ V = 30 V
CC
f
300
200
100
70
t @ V = 120 V
s CC
100
70
50
30
20
50
t @ V
d
= 1.0 V
BE(off)
= 120 V
V
CC
30
20
10
0.2
1.0 2.0 3.0 5.0
0.2
1.0 2.0 3.0 5.0
0.3 0.5
10 20 30 50
100 200
0.3 0.5
10
20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
http://onsemi.com
4
MMBT5401LT1
PACKAGE DIMENSIONS
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MMBT5401LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBT5401LT1/D
相关型号：
SMMBTA06LT1
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
©2020 ICPDF网 联系我们和版权申明