BD18353EFV-M_技术文档

Datasheet

Boost LED Driver

1ch High Current LED Controller

for Automotive

BD18353EFV-M BD18353MUF-M

General Description

Key Specifications

BD18353EFV-M/MUF-M is a 1ch LED Controller. High

◼ Input Voltage Range:

◼ Maximum Output Voltage:

5 V to 65 V

65 V

side current detection amplifier is built-in.

PWM

dimming duty can be freely set with built-in PWM

generation circuit. PWM dimming realizes by driving an

external P-ch MOSFET. Outputs abnormal LED status

to the FAULT_B pin. Two systems of analog dimming

are built-in. High precision 3.0 V output power supply

for analog dimming and PWM dimming setting is built-in.

◼ LED Current Sense Voltage Accuracy:

◼ Setting Frequency Switching Range:

200 kHz to 2.5 MHz

◼ Operating Ambient Temperature:-40 °C to +125 °C

±3 %

Features

AEC-Q100 Qualified^{(Note 1)}

Packages

W (Typ) x D (Typ) x H (Max)

6.5 mm x 6.4 mm x 1.0 mm

3.5 mm x 3.5 mm x 1.0 mm

◼

Functional Safety Supportive Automotive Products

Rail-to-Rail Current Sense Amplifier

PWM Dimming Signal Generator

Over Voltage Protection (OVP)

Short Circuit Protection (SCP)

Analog Dimming (two systems)

DRL Mode (100 % Duty) Enable

Outputs Abnormal LED Status (FAULT_B)

Spread Spectrum Frequency Modulation

ON/OFF (SSFM_B)

HTSSOP-B20

VQFN20FV3535

(Note 1) Grade1

VQFN20FV3535

HTSSOP-B20

Applications

Automotive Exterior Lamps

Rear, Turn, DRL/Position, Fog, High/Low Beam etc.

◼

Typical Application Circuit

VIN

EN

DRL/PWMI

VDRV5

GND BD18353EFV-M/ GL

MUF-M

VREF3

DCDIM1

DCDIM2

COMP

RT

CS

PGND

OPUD

SNSP

SNSN

DSET

PDRV

VDRV5

FAULT_B

SSFM_B

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

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Pin Configuration (HTSSOP-B20)

HTSSOP-B20

(TOP VIEW)

1

20

19

18

17

16

15

14

13

12

11

VIN

DRL/PWMI

VDRV5

GL

2

EN

3

GND

4

VREF3

CS

5

DCDIM1

PGND

OPUD

SNSP

SNSN

PDRV

SSFM_B

6

DCDIM2

7

COMP

8

RT

EXP-PAD

9

DSET

10

FAULT_B

Pin Description (HTSSOP-B20)

Pin No.

Pin Name

Function

1

2

VIN

Power supply input

Enable input

GND

EN

3

GND

4

VREF3

DCDIM1

DCDIM2

COMP

RT

Reference voltage for analog dimming and PWM dimming duty setting

Analog dimming input

5

6

Analog dimming input

7

Connect capacitor to set feedback compensation

Connect resistor to set switching frequency

8

9

DSET

PWM dimming duty setting voltage input (connect to resistor divider from VREF3 to GND)

Open drain output for fault state flag

10

11

12

13

14

FAULT_B

SSFM_B

PDRV

SNSN

SNSP

Spread spectrum frequency modulation enable input (SSFM enable @SSFM_B = Low)

P-ch MOSFET gate drive for PWM dimming and LED protection

Current sense input (-)

Current sense input (+)

Output voltage monitor for over voltage protection and under voltage detection

(connect to resistor divider from output voltage to GND)

15

OPUD

16

17

18

19

20

-

PGND

CS

Power GND

Inductor current sense input

GL

Output for N-ch MOSFET gate drive

Bypass with capacitor to provide 5 V bias supply for gate drive

VDRV5

DRL/PWMI DRL mode (100 % duty) enable input / External PWM dimming signal input

EXP-PAD

Heat radiation pad. The EXP-PAD is connected to GND.

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Pin Configuration (VQFN20FV3535)

VQFN20FV3535

(TOP VIEW)

1

15

14

13

12

11

GND

CS

2

VREF3

PGND

OPUD

SNSP

SNSN

3

DCDIM1

4

DCDIM2

EXP-PAD

5

COMP

Pin Description (VQFN20FV3535)

Pin No.

Pin Name

Function

1

2

GND

VREF3

DCDIM1

DCDIM2

COMP

RT

Reference voltage for analog dimming and PWM dimming duty setting

Analog dimming input

3

4

Analog dimming input

5

Connect capacitor to set feedback compensation

Connect resistor to set switching frequency

6

7

DSET

PWM dimming duty setting voltage input (connect to resistor divider from VREF3 to GND)

8

FAULT_B Open drain output for fault state flag

9

SSFM_B Spread spectrum frequency modulation enable input (SSFM enable @SSFM_B = Low)

10

11

12

PDRV

SNSN

SNSP

P-ch MOSFET gate drive for PWM dimming and protection

Current sense input (-)

Current sense input (+)

Output voltage monitor for over voltage protection and under voltage detection

(connect to resistor divider from output voltage to GND)

13

OPUD

14

15

16

17

18

19

20

-

PGND

CS

Power GND

Inductor current sense input

GL

Output for N-ch MOSFET gate drive

Bypass with capacitor to provide 5 V bias supply for gate drive

VDRV5

DRL/PWMI DRL mode (100 % duty) enable input / External PWM dimming signal input

VIN

EN

Power supply input

Enable input

Heat radiation pad. The EXP-PAD is connected to GND.

EXP-PAD

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Block Diagram

VIN

VREF

Internal

Reference

Voltage

TSD

UVLO

EN

VREF

UVLO

VIN UVLO

VDRV 5UVLO

EN

TSD

EN

TSD

VDRV5

5 V Regulator

VDRV5

GND

VREF3

3 V Reference

Voltage

VREF3

GL

OCP

OVP

PWMDIM

TSD

PGND

Driver

Controller

UVLO

EN

COMP

SCP

CURRENT

SENSE

SNSP

Err Amp

DC/DC

Slope

x 12

CS

CLK

SNSN

PGND

0.2 V

PWMDIM

EN

OCP

DC/DC

OCP

DCDIM

DCDIM1

DCDIM2

TSD

UVLO

OVP

INTOVP

Over Voltage

Protection

SCP

SNSP

VREF

OVP

Over Voltage

Protection

OPUD

CLK

OSC

DC/DC Oscillator

RT

UVD

Under Voltage

Detection

UVD

OVP

SSFM

Spread

Spectrum

Modulator

SSFM_B

SCP

Short Circuit

Protection

SCP

Hiccup

Counter

FAULT_B

Fault Logic

INTCLK

Internal CLK

UVD

PWMDIM

INTCLK

Counter

PWMDIM

SNSP

DSET

EN

TSD

PWMDIM

PDRV

EN

UVLO

OVP

SCP

PWMDIM

Slope

Level

Shift

TSD

SNSP - 7.5 V

UVLO

OVP

SCP

DRL/PWMI

VREF

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Description of Blocks

1 Power Supply for N-ch MOSFET Gate Driver and Internal Circuit (VDRV5)

The VDRV5 voltage 5.0 V (Typ) is generated from the VIN pin voltage. This voltage is used as the internal power supply of

the IC and the power supply for driving the DC/DC N-ch MOSFET. It also supplies current to the FAULT_B pin pull up

resistor.

The total current supplied to the DC/DC N-ch MOSFET and the resistor must be I_DRV5LM(VDRV5 Output Current Limit) or

less.

The current supplied to the DC/DC N-ch MOSFET (I_MOSFET) can be calculated by the following formula.

퐼_{푀푂푆퐹퐸푇}= 푄_퐺× 푓

푆푊

Where:

푄_퐺is the gate charge of the MOSFET.

푓

푆푊

is the switching frequency.

Connect C_VDRV5= 2.2 µF as feedback compensation capacitor to the VDRV5 pin. Place ceramic capacitor close to the IC

to minimize trace length to the VDRV5 pin and also to the IC ground.

Do not use the VDRV5 as a power supply other than this IC.

2 High Accuracy Reference Voltage (VREF3)

The VREF3 voltage 3.0 V (Typ) is generated from the VDRV5 pin voltage. VREF3 is used as a reference voltage for PWM

dimming duty and analog dimming setting. Input the voltage set by resistor dividing from the VREF3 pin to the DSET pin,

the DCDIM1 pin, and the DCDIM2 pin.

Do not connect a capacitor to the VREF3 pin.

Do not use the VREF3 as a power supply other than this IC.

3 LED Current Setting (CURRENT SENSE)

LED current (I_LED) can be set by resistor R_SNSconnected between the SNSP pin and the SNSN pin.

푉

ꢀ푁ꢀ_100 %

퐼_퐿퐸퐷

=

[A]

푅

ꢀ푁ꢀ

When:

V_DCDIM1, V_DCDIM2> V_{DCD_100 %}

Where:

ꢁ

is the Current sense threshold voltage.

푆ꢂ푆_ꢃꢄꢄ %

LFILT

BATT

C_FILT

C_IN1

C_IN2

C_IN3

L1

U1 BD18353EFV-M/MUF-M

C_VIN

R_DRL

VIN

DRL/PWMI

VDRV5

GL

REN1

D1

C_VDRV5

C_OUT1C_OUT2C_OUT3C_OUT4C_OUT5

EN

R_GL

R_EN2

C_EN

M1

GND

I_MOSFET

VREF3

DCDIM1

DCDIM2

COMP

RT

CS

R_OPUD1

R_SLP

R_CS

PGND

OPUD

SNSP

SNSN

C_OPUD

R_OPUD2

C_COMP

R_COMP

R_SNS

R_RT

Q1

DSET

FAULT_B

PDRV

M2

R_PDRV

R_{FAULT_B}

VDRV5

SSFM_B

R_{SSFM_B}

I_LED

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Description of Blocks - continued

4 PWM Dimming (PWMDIM)

4.1 External P-ch MOSFET Drive

The PDRV pin drives an external P-ch MOSFET to achieve PWM dimming. Connect the gate of the P-ch MOSFET

to the PDRV pin. The PDRV pin outputs SNSP and SNSP - 7.5 V (Typ).

At start up and restart (After UVLO, TSD, SCP, OVP is released or after EN = High input.), after DC/DC starts

switching, the PDRV pin can output SNSP - 7.5 V (Typ).

The PDRV output voltage and the DC/DC output voltage (SNSP voltage) have the characteristics shown below figure.

When the number of LED lights is small, design and evaluate in consideration of the characteristics shown below

figure. There is a possibility that the external P-ch MOSFET cannot be driven.

0

-1

-2

-3

-4

-5

Tj = +150 °C

Tj = +25 °C

Tj = -40 °C

-6

-7

-8

-9

-10

5.0

7.5

10.0

12.5

15.0

17.5

20.0

SNSP Voltage: V_SNSP[V]

Figure 1. PDRV Output Low Voltage vs SNSP Voltage

4.2 PWM Dimming Duty Setting

The BD18353EFV-M/MUF-M has a built-in PWM dimming pulse generation circuit. The PWM dimming duty is set by

the internal ramp waveform and the voltage input to the DSET pin. The DSET pin voltage is set from VREF3 by a

resistor voltage divider.

Setting duty D_PWMcan be calculated by the following formula.

푉

− 푉

ꢉ퐴ꢊꢋ퐵

ꢆꢀꢇꢈ

ꢅ_푃푊푀

=

× ꢌꢍꢍ

[%]

푉

− 푉

ꢉ퐴ꢊꢋ퐵

ꢉ퐴ꢊꢋꢋ

Where:

R_DSET1, R_DSET2are the PWM dimming duty setting resistor.

ꢉ

ꢆꢀꢇꢈ2

푉

ꢉꢇꢎ3

×

− 푉

ꢉ퐴ꢊꢋ퐵

ꢉ

+ ꢉ

ꢆꢀꢇꢈ1

ꢆꢀꢇꢈ2

ꢅ_푃푊푀

=

× ꢌꢍꢍ

[%]

푉

− 푉

ꢉ퐴ꢊꢋ퐵

ꢉ퐴ꢊꢋꢋ

If:

R_DSET1= 20 kΩ, R_DSET2= 10 kΩ

10 푘훺

20 푘훺 + 10 푘훺

ꢐ.ꢄꢄ ×

−ꢄ.4ꢄ

(

)

ꢅ_푃푊푀ꢏ푦푝 =

× ꢌꢍꢍ = ꢒꢍ.ꢍ [%]

ꢑ.4ꢄ − ꢄ.4ꢄ

Where:

ꢁ_{푅ꢓ푀푃푃}is the internal ramp peak voltage = 2.40 V (Typ).

ꢁ_{푅ꢓ푀푃ꢔ}is the internal ramp bottom voltage = 0.40 V (Typ).

VREF3

SNSP

R_DSET1

DSET

Level

Shift

R_DSET2

PDRV

V_RAMPP

V_RAMPB

SNSP - 7.5 V

At UVLO detection, OVP detection, SCP detection (during hiccup operation), TSD detection or EN = Low input, the

internal ramp waveform becomes V_RAMPBvoltage.

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4 PWM Dimming (PWMDIM) - continued

4.3 PWM Dimming by External Pulse Signal Input

When the DRL/PWMI pin voltage is V_DRLIHor more, it operates at PWM 100 % duty setting. When the DRL/PWMI

pin voltage is V_DRLILor less, it operates at the PWM dimming duty set by the DSET pin. Therefore, to control PWM

dimming with external PWM pulse signal, connect the DSET pin to GND and input the PWM signal to the DRL/PWMI

pin.

DRL/PWMI

Input

External Pulse

DSET

4.4 DRL Mode (100 % Duty) Enable Input

Switching between PWM dimming mode and DRL mode (100 % Duty) can be done with the input voltage at

DRL/PWMI pin. When the DRL/PWMI pin voltage is V_DRLIHor more, it operates at PWM 100 % duty setting. When

the DRL/PWMI pin voltage is V_DRLILor less, it operates at the PWM dimming duty set by the DSET pin.

Because the DRL/PWMI pin is composed of a high-voltage element, it is possible to directly input the battery voltage.

The DRL/PWMI pin is pulled down by current.

Considering the short circuit between the DRL/PWMI pin and the VDRV5 pin, it is recommended to insert a limiting

resistor R_DRL(47 kΩ or more) as shown below figure.

PWM Mode

+B

VIN

DRL Mode

(100 % Duty)

R_DRL

DRL/PWMI

DRL Mode (100 % Duty) Switching Application Example

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Description of Blocks - continued

5 Analog Dimming (DCDIM)

BD18353EFV-M/MUF-M has two systems of analog dimming function. For example, it can be used as in Figure 2. (a)

Thermal Derating Function and BIN Setting Function or in Figure 2. (b) Thermal Derating Function and Input Low Voltage

Derating Function.

When the DCDIM1 or DCDIM2 pin (The lower voltage takes precedence) becomes 2.2 V (Typ) or less, the LED current

decreases.

When not using the analog dimming function, set it to 2.5 V or more, such as connecting DCDIM1, DCDIM2 voltage to the

VREF3 pin.

When the analog dimming rate is low, DC/DC control may become unstable and the LED may flicker.

Confirm enough in the evaluation.

VIN

LED Board

VREF3

DCDIM1

DCDIM2

DCDIM1

DCDIM2

BIN

Resistor

Thermistor

(a) Thermal Derating Function and BIN Setting Function

(b) Thermal Derating Function and Input Low Voltage Derating

Function

Figure 2. Analog Dimming Application Example

180

160

140

120

100

80

60

40

V_{SNS_10 %}(V_DCDIM1,V_DCDIM2= 0.4 V)

20

0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

DCDIM1, DCDIM2 Voltage: V_DCDIM1, V_DCDIM2[V]

Figure 3. V_SNSvs DCDIM1, DCDIM2 Voltage

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Description of Blocks - continued

6 Enable Setting (EN)

The BD18353EFV-M/MUF-M can be ON/OFF controlled by the EN pin. It is possible to set the EN pin voltage by a

resistor voltage divider from VIN.

(

)

ꢇ푁2

푅

ꢖ 푅

ꢇ푁1

ꢁ

=

× ꢁ_퐸ꢂꢕ퐻

× ꢁ_퐸ꢂꢕ퐿

[V]

ꢕꢂ푂ꢂ

푅

ꢇ푁2

(

)

ꢖ 푅

ꢇ푁2

푅

ꢇ푁1

ꢁ

ꢕꢂ푂퐹퐹

=

푅

ꢇ푁2

Where:

ꢁ_퐸ꢂꢕ퐻is the EN High level threshold voltage = 1.0 V (Typ).

ꢁ_퐸ꢂꢕ퐿is the EN Low level threshold voltage = 0.9 V (Typ).

VIN

R_EN1

EN

R_EN2

When the EN pin voltage becomes V_ENILor less, the PDRV pin outputs High level to turn off external P-ch MOSFET.

DC/DC is stopped and the GL pin outputs Low level.

When pulling up to the VIN pin to fix the EN pin to High, considering the short circuit between the EN pin and the GND pin, it

is recommended to insert a limiting resistor.

7 Switching Frequency Setting (OSC)

The switching frequency of the DC/DC can be set by the resistor R_RTconnected to the RT pin.

99ꢄꢄ

푓

≒

× ꢌꢍ^ꢐ

[kHz] (200 kHz to 700 kHz)

[kHz] (2.0 MHz to 2.5 MHz)

푆푊ꢃ

푅

ꢉꢈ

9ꢄꢄꢄ

푓

푆푊ꢑ

푅

ꢉꢈ

8 Spread Spectrum Frequency Modulation (SSFM)

BD18353EFV-M/MUF-M has built-in spread spectrum function. It operates at a frequency of ±6 % (Typ) around the

frequency f_SWset by R_RTThe spread spectrum function can be set to ON/OFF by the SSFM_B pin.

.

To use the spread spectrum function, pull down the SSFM_B pin to GND.

In case the spread spectrum function will not be used, pull up the SSFM_B pin to the VDRV5 pin.

Considering a short circuit between the SSFM_B pin and the PDRV pin, it is recommended to insert a pull up resistor or a

pull down resistor (47 kΩ or more).

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Description of Blocks - continued

9 Protection Function

9.1 Under Voltage Lock Out (UVLO)

UVLO is a protection circuit that prevents IC malfunction at power-on or power-off.

When the VIN pin voltage becomes V_INUVDor less or the VDRV5 pin voltage becomes V_DRV5UVDor less, the PDRV pin

outputs high level to turn off external P-ch MOSFET. DC/DC is stopped and GL outputs low level.

9.2 Thermal Shutdown (TSD)

TSD shuts down circuits at 175 °C (Typ) and release them at 150 °C (Typ).

9.3 Over Current Protection (OCP)

When the CS pin voltage becomes V_CSOCPor more, over current is detected and the GL pin outputs Low until the next

switching cycle.

9.4 Over Voltage Protection (OVP)

OVP voltage can be set by dividing resistors R_OPUD1, R_OPUD2connected between DC/DC output and GND.

LED open failure can also be detected by the OVP function.

The detection voltage V_{OUT_OVP}is set by the following formula.

푅

ꢖ 푅

ꢗꢋꢘꢆ2

ꢗꢋꢘꢆ1

ꢁ_{푂푈푇_푂푉푃}

=

× ꢁ_푂푉푃[V]

푅

ꢗꢋꢘꢆ2

Where:

ꢁ_푂푉푃is the over voltage protection detect voltage = 1.00 V (Typ).

When OVP is detected, the PDRV pin outputs high level to turn off the external P-ch MOSFET. DC/DC stops and GL

outputs low level. FAULT_B outputs low level and outputs error detection.

OVP has hysteresis, and when the OPUD pin voltage becomes V_OVP- V_OVPHYSor less, DC/DC restarts. When the

LED is open, OVP is detected again and the OVP detection operation is repeated.

When OVP is released and the voltage between the SNSP pin and the SNSN pin becomes V_SG(Status Good Voltage)

or more, FAULT_B outputs high level. FAULT_B holds low output until t_{FAULT_BL}elapses after OVP is released.

V_OUT

R_OPUD1

OPUD

R_OPUD2

Figure 4. OVP Setting Circuit

LED Open

LED Open Release

V_OUT

V_OVP

V_OVP- V_OVPHYS

OPUD

V_{SNSP_SNSN}

FAULT_B

V_SG

t_{FAULT_BL}

GL

DC/DC

Condition

ON

OFF

ON

OFF

ON

OFF

ON

Figure 5. Timing Chart (OVP)

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9 Protection Function - continued

9.5 Internal Over Voltage Protection (INTOVP)

If the LED opens with the resistor R_OPUD1open or the OPUD pin grounded (dual fail), the DC/DC is over voltage and

the IC destroyed.

The BD18353EFV-M/MUF-M has an internal OVP circuit that monitors the SNSP pin voltage and prevents destruction

of the IC.

However, since the threshold value is fixed (V_INTOVP), when the absolute voltage of the external parts is low, the parts

may be destroyed.

When INTOVP is detected, the PDRV pin outputs High level to turn off the external P-ch MOSFET. DC/DC stops

and GL outputs low level. FAULT_B outputs Low level and outputs error detection. When INTOVP is released and

the voltage between the SNSP pin and the SNSN pin becomes V_SGor more, FAULT_B outputs high level.

FAULT_B holds low output until t_{FAULT_BL}elapses after OVP is released.

V_OUT

R_OPUD1

OPUD

R_OPUD2

INTOVP

SNSP

INTOVP Circuit

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9 Protection Function - continued

9.6 Under Voltage Detection (UVD)

UVD voltage can be set by dividing resistors R_OPUD1, R_OPUD2connected between DC/DC output and GND.

The detection voltage (V_{OUT_UVD}) is set by the following formula.

푅

ꢖ푅

ꢗꢋꢘꢆ1

ꢁ_{푂푈푇_푈푉퐷}

=

^{ꢗꢋꢘꢆ2}× ꢁ_푈푉퐷[V]

푅

ꢗꢋꢘꢆ2

Where:

ꢁ_푈푉퐷is the under voltage detection threshold voltage = 100 mV (Typ).

UVD is detected when the OPUD pin voltage become V_UVDor less. UVD is monitored when the voltage between the

SNSP pin and the SNSN pin becomes V_SGor more in the ON section of PWM dimming.

After detection the internal counter starts. When the voltage between the SNSP pin and the SNSN pin becomes V_SG

or more in the ON section of PWM dimming, it counts up. When the total time reaches t_UVD, the FAULT_B outputs

becomes Low.

After UVLO, TSD, SCP, OVP is released or after EN = High input, until t_UVDDIShas elapsed, UVD does not be

detected.

ON

PWM Dimming

PDRV

V_SNSP

V_SNSP- VPDRVOL

V_{SNSP_SNSN}

I_OUT

V_SG

V_OPUD

V_UVD

Reset

Count

Up

Count

Up

Count

Up

Count

Up

Count

Up

Count

Up

Internal Counter

Condition

Reset

hHoolld

Hold

Count Over

FAULT_B

Timing Chart (UVD)

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9 Protection Function - continued

9.7 Short Circuit Protection (SCP)

When the anode of the LED is shorted to GND, the voltage between the SNSP pin and the SNSN pin can be

monitored and protected by SCP.

When the voltage between the SNSP pin and the SNSN pin become V_SCPONor more, SCP is detected after SCP delay

time (t_SCPDLY).

When SCP is detected, the PDRV pin outputs High level to turn off the external P-ch MOSFET. DC/DC stops and GL

outputs Low level. FAULT_B outputs Low level and outputs error detection.

Restart after hiccup time (t_HICCUP) elapses. If the anode of the LED is shorted to GND, the SCP is detected again and

the operation is repeated.

FAULT_B holds Low output until t_{FAULT_BL}after restart.

LED Short

LED Short Release

V_SCPON

V_{SNSP_SNSN}

V_SNSP

PDRV

t_HICCUP

V_SNSP- V_PDRVOL

COMP

GL

FAULT_B

t_{FAULT_BL}

Figure 6. Timing Chart (SCP)

When the anode of the LED is shorted to GND, the voltage between the SNSP pin and the SNSN pin may exceed the

absolute voltage. It is recommended to insert a PNP transistor as shown below figure and clamp the voltage.

Design to take full consideration of power dissipation of R_SNSand P-ch MOSFET.

SNSP

SNSN

PDRV

Figure 7. Example of Current Clamp Circuit

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Description of Blocks - continued

10 Outputs Abnormal Status (FAULT_B)

The following table summarizes the device behavior under fault condition.

Fault Description Operations

Operation at Detection

Protection Function

FAULT_B Output

DC/DC

PDRV Pin

COMP Pin

Discharge

EN = Low Detect

VIN UVLO Detect

VDRV5 UVLO Detect

TSD Detect

OFF

High (= SNSP)

Hiz

OFF

-

High (= SNSP)

-

Discharge

-

Hiz

DC/DC

OCP Detect

DC/DC

OVP Detect

DC/DC

INTOVP Detect

DC/DC

UVD Detect

-

High (= SNSP)

-

Discharge

-

Low

Low (after counting t_UVD

Low

)

SCP Detect

OFF

High (= SNSP)

Discharge

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Absolute Maximum Ratings (Tj = 25 °C)

Parameter

Symbol

V_IN

Rating

Unit

V

Supply Pin Voltage (VIN)

EN, DRL/PWMI Pin Voltage

SNSP, SNSN Pin Voltage

PDRV Pin Voltage

-0.3 to +70

-7 to +70

V_EN,V_DRL/PWMI

V_SNSP,V_SNSN

V_PDRV

V

OPUD, SSFM_B Pin Voltage

SNSP to OPUD Pin Voltage

SNSP to SSFM_B Pin Voltage

SNSP to SNSN Pin Voltage

SNSP to PDRV Pin Voltage

VDRV5 Pin Voltage

V_OPUD, V_{SSFM_B}

V_{SNSP_OPUD}

V_{SNSP_SSFM_B}

V_{SNSP_SNSN}

V_{SNSP_PDRV}

V_DRV5

V

-7 to +70

V

-0.3 to +0.6

-0.3 to +10

-0.3 to +7

-0.3 to +70

V

VIN to VDRV5 Pin Voltage

V_{VIN_VDRV5}

V

VREF3, DCDIM1, DCDIM2, COMP,

RT, DSET Pin Voltage

V_REF3, V_DCDIM1, V_DCDIM2

,

-0.3 to +7

V

V_COMP, V_RT, V_DSET

GL, CS Pin Voltage

V_GL,V_CS

V_{FAULT_B}

Tjmax

Tstg

-0.3 to +7

150

V

FAULT_B Pin Voltage

Maximum Junction Temperature

Storage Temperature Range

°C

-55 to +150

Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is

operated over the absolute maximum ratings.

Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the

properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by

increasing board size and copper area so as not to exceed the maximum junction temperature rating.

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Thermal Resistance^{(Note 1)}

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s^{(Note 3)}

2s2p^{(Note 4)}

HTSSOP-B20

Junction to Ambient

Junction to Top Characterization Parameter^{(Note 2)}

θ_JA

143.0

8

26.8

4

°C/W

Ψ_JT

VQFN20FV3535

Junction to Ambient

Junction to Top Characterization Parameter^{(Note 2)}

θ_JA

181.9

19

50.5

7

°C/W

Ψ_JT

(Note 1) Based on JESD51-2A(Still-Air).

(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package.

(Note 3) Using a PCB board based on JESD51-3.

(Note 4) Using a PCB board based on JESD51-5, 7.

Layer Number of

Measurement Board

Material

Board Size

Single

FR-4

114.3 mm x 76.2 mm x 1.57 mmt

Top

Copper Pattern

Thickness

70 μm

Footprints and Traces

Layer Number of

Measurement Board

Thermal Via^{(Note 5)}

Material

Board Size

114.3 mm x 76.2 mm x 1.6 mmt

2 Internal Layers

Pitch

Diameter

4 Layers

FR-4

1.20 mm

Φ0.30 mm

Top

Copper Pattern

Bottom

Thickness

70 μm

Copper Pattern

Thickness

35 μm

Copper Pattern

Thickness

70 μm

Footprints and Traces

74.2 mm x 74.2 mm

(Note 5) This thermal via connects with the copper pattern of all layers.

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Recommended Operating Condition

Parameter

Symbol

V_IN

Min

5

Typ

Max

65

Unit

V

Supply Voltage (VIN)^{(Note 1)}

Output Voltage (SNSP)

PWM Frequency Input

PWM Minimum Pulse Width

Switching Frequency

13

-

V_SNSP

f_PWMI

t_MIN

-

65

V

30

10

200

-40

-

2000

-

Hz

μs

kHz

°C

-

f_SW

-

2500

+125

Operating Ambient Temperature

Topr

-

(Note 1) ASO should not be exceeded.

Recommended Setting Parts Range

Parameter

Symbol

C_VIN

Min

1.4

0.6

10

Typ

Max

3.3

1.5

-

Unit

μF

kΩ

Ω

Capacitor Connecting to the VIN Pin^{(Note 2)}

Capacitor Connecting to the VDRV5 Pin^{(Note 2)}

Capacitor Connecting to the COMP Pin^{(Note 2)}

Total DC/DC Output Capacitor^{(Note 2)}

2.2

C_VDRV5

2.2

C_COMP

1.0

C_OUT

-

Resistor Connecting to the EN Pin

R_EN1, R_EN2

R_COMP

4.7

-

100

49

100

-

Resistor Connecting to the COMP Pin

Resistor Connecting to the RT Pin

33

-

R_RT

3.9

4.7

10

kΩ

Resistor Connecting to the DSET1,DSET2 Pin

Resistor Connecting to the FAULT_B Pin

Resistor Connecting to the SSFM_B Pin

Resistor Connecting to the DRL/PWMI Pin

R_DSET1, R_DSET2

R_{FAULT_B}

R_{SSFM_B}

R_DRL

-

47

-

47

-

(Note 2) Set the capacitor in consideration of temperature characteristics and DC bias characteristics.

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Electrical Characteristics

(Unless otherwise specified V_IN= 13 V, Tj = -40 °C to +150 °C)

Limit

Typ

Unit

Conditions

Parameter

Symbol

Min

Max

[Total]

VIN Circuit Current 1

I_IN1

I_IN2

-

380

1.7

580

2.3

μA

V_EN= 0 V, No switching

V_EN= 5 V

V_{SNSP_SNSN}> V_{SNS_100 %}

V_DCDIM1= V_DCDIM2= 3.0 V

VIN Circuit Current 2

mA

VIN UVLO Detect Voltage

V_INUVD

V_INUVR

4.10

4.49

-

4.30

4.70

0.4

4.49

4.91

-

V

VIN falling

VIN UVLO Release Voltage

VIN UVLO Hysteresis Voltage

VDRV5 UVLO Detect Voltage

VDRV5 UVLO Release Voltage

VIN rising

V_INUVHYS

V_DRV5UVD

V_DRV5UVR

V_INUVR- V_INUVD

V_DRV5falling

V_DRV5rising

3.94

4.22

4.15

4.45

4.38

4.68

VDRV5 UVLO

Hysteresis Voltage

-

0.3

-

V_DRV5UVHYS

V

V_DRV5UVR- V_DRV5UVD

[Reference Voltage]

C_VDRV5= 2.2 μF

I_VDRV5= 0 mA to 10 mA load

VDRV5 Reference Voltage

V_DRV5

4.76

-

5.00

0.25

5.25

0.65

V

VIN = 4.75 V

I_VDRV5= 10 mA load

VDRV5 Drop Voltage

V_DRV5DP

VDRV5 Output Current Limit

VREF3 Reference Voltage

VREF3 Output Current Limit

[EN]

I_DRV5LM

V_REF3

45

2.91

2

-

3.00

-

3.09

-

mA

V

I_VREF3= 0 mA to 2 mA load

I_REF3LM

mA

EN Pull Down Current

I_EN

0.6

1.2

1.8

μA

V

V_EN= 5 V

V_ENrising

EN High Level Threshold

Voltage

V_ENIH

0.96

1.00

1.04

EN Low Level Threshold

Voltage

V_ENIL

0.86

0.90

0.1

0.94

V

V_ENfalling

EN Hysteresis Voltage

[OSCILLATOR Circuit]

Switching Frequency 1

Switching Frequency 2

RT Output Voltage

V_ENHYS

-

V_ENIH- V_ENIL

f_SW1

f_SW2

V_RT

270

300

2300

330

kHz

V

R_RT= 33 kΩ

R_RT= 3.9 kΩ

V_{SSFM_B}= 4 V

V_{SSFM_B}= 0 V

2070

2530

-

0.8

-

Spread Spectrum Frequency

f_SSFM

f_SW/1024

Hz

Spread Spectrum Frequency

Modulation Width

f_SSFMW

-

±6

-

%

V

V_{SSFM_B}= 0 V

SSFM_B High Level

Input Voltage

V_{SSFM_BIH}

V_{SSFM_BIL}

R_{SSFM_BD}

3.0

-

Spread spectrum disable

Spread spectrum enable

SSFM_B = 4 V

SSFM_B Low Level

Input Voltage

0.4

800

V

SSFM_B

Pull Down Resistor

200

400

kΩ

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Electrical Characteristics - continued

(Unless otherwise specified V_IN= 13 V, Tj = -40 °C to +150 °C)

Limit

Typ

Unit

Conditions

Parameter

Symbol

Min

Max

[N-ch Gate Driver]

GL ON Resistor High

R_GLH

R_GLL

-

1.0

0.6

60

2.5

1.5

-

Ω

I_GL= 10 mA load

GL ON Resistor Low

I_GL= 10 mA input

R_RT= 33 kΩ

Minimum OFF Time 1

Minimum OFF Time 2

[DC/DC Current Detection]

Over Current Detection Voltage

t_OFFMIN1

t_OFFMIN2

ns

35

-

R_RT= 3.9 kΩ

275

300

120

321

V_CSOCP

t_CSBLK

mV

ns

V_CSrising

CS Pin

-

Leading Edge Blanking Time

Slope Compensation Current

Peak

-

50

-

I_CSSLPP

μA

V

CS to COMP Level Shift

Voltage

1.26

V_CSCMPLS

No slope compensation added

V_{SNSP_SNSN}= 166.5 mV

[Error Amplifier]

Trans Conductance

g_M

-

1300

200

-

μS

μA

V_{SNSP_SNSN}= 83.3 mV

V_DCDIM1= V_DCDIM2= 0 V

COMP Sink Current

I_COMPSI

V_{SNSP_SNSN}= 83.3 mV

V_DCDIM1= V_DCDIM2= 3.0 V

COMP Source Current

I_COMPSO

-

200

-

μA

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Electrical Characteristics - continued

(Unless otherwise specified V_IN= 13 V, Tj = -40 °C to +150 °C)

Limit

Typ

Unit

Conditions

Parameter

Symbol

Min

Max

[Current Sense Amplifier]

Tj = +25 °C

V_{SNS_100 %}= V_SNSP- V_SNSN

V_SNSN= 0 V, 30 V

V_DCDIM1= V_DCDIM2= 2.5 V

Tj = -40 °C to +125 °C

V_{SNS_100 %}= V_SNSP- V_SNSN

V_SNSN= 0 V, 30 V

165.0

161.7

146

166.7

150

171.7

153

mV

LED Current Sense Voltage

100 %

V_{SNS_100 %}

V_DCDIM1= V_DCDIM2= 2.5 V

V_{SNS_90 %}= V_SNSP- V_SNSN

V_SNSN= 0 V, 30 V

V_DCDIM1= 2.0 V

LED Current Sense Voltage

90 %

V_{SNS_90 %}

V_DCDIM2= 2.5 V

V_{SNS_10 %}= V_SNSP- V_SNSN

V_SNSN= 0 V, 30 V

V_DCDIM1= 0.4 V

LED Current Sense Voltage

10 %

V_{SNS_10 %}

13.7

16.7

19.7

V_DCDIM2= 2.5 V

Common-mode Input Range

High Side Voltage Detection

V_{SNSN_HSS}

V_{SNSN_LSS}

I_{SNSP_HSS}

I_{SNSN_HSS}

I_{SNSP_LSS}

I_{SNSN_LSS}

V_SCPON

1.9

1.8

160

18

2.0

1.9

330

35

2.1

2.0

530

54

V

V_SNSNrising

V_SNSNfalling

Common-mode Input Range

Low Side Voltage Detection

SNSP Pin Input Current

High Side Voltage

V_{SNSP_SNSN}= 166.5 mV

V_SNSN= 60 V

μA

mV

SNSN Pin Input Current

High Side Voltage

V_{SNSP_SNSN}= 166.5 mV

V_SNSN= 60 V

SNSP Pin Input Current

Low Side Voltage

V_{SNSP_SNSN}= 166.5 mV

V_SNSN= 0 V

-8

-4

-2

SNSN Pin Input Current

Low Side Voltage

V_{SNSP_SNSN}= 166.5 mV

V_SNSN= 0 V

-92

325

-50

350

-28

375

Short Circuit Protection

Threshold Voltage

V_{SNSP_SNSN}rising

Short Circuit Protection

Delay Time

t_SCPDLY

t_HICCUP

40

33

50

40

60

48

μs

Hiccup Time

ms

Short circuit detect

V_OPUDrising

[Over Voltage Protection / Under Voltage Detection]

Over Voltage Protection Detect

Voltage

V_OVP

V_OVPHYS

V_UVD

0.96

1.00

0.1

100

-

1.04

V

Over Voltage Protection

Hysteresis Voltage

-

Under Voltage Detection

Threshold Voltage

mV

V

Internal Over Voltage Protection

Detect Voltage

V_INTOVP

65

V_SNSPmonitor

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Electrical Characteristics - continued

(Unless otherwise specified V_IN= 13 V, Tj = -40 °C to +150 °C)

Limit

Typ

Unit

Conditions

Parameter

[PWM Dimming]

Symbol

Min

Max

480

PWM Dimming Frequency

f_PWM

320

400

Hz

V

V_REF3/ 3 x V_REF3/ 3 x V_REF3/ 3 x

0.4 - 0.02 0.4 0.4 + 0.02

V_REF3/ 3 x V_REF3/ 3 x V_REF3/ 3 x

Internal Ramp Bottom Voltage

V_RAMPB

Internal Ramp Peak Voltage

DSET Pin Input Current

V_RAMPP

I_DSET

V

2.4 - 0.02

2.4

2.4 + 0.02

-

0

1

μA V_DSET= 3.0 V

I_PDRV= 10 mA load

V_SNSP= 30 V

-

20

50

PDRV Pull Up ON Resistor

PDRV Pull Down Current

R_{PDRV_U}

Ω

V_DSET= 0 V, V_DRL/PWMI= 0 V

V_{SNSP_PDRV}= 0 V, V_SNSP= 30 V

V_DSET= 5 V, V_DRL/PWMI= 0 V

17

38

65

I_{PDRV_D}

mA

V

PDRV Output Low Voltage

V_PDRVOL

6.5

7.5

9.0

V_{SNSP_PDRV}, V_SNSP= 30 V

[DRL Mode]

DRL/PWMI Threshold Voltage

DRL Mode

1.42

0.95

1.50

1.00

1.58

1.05

V_DRLIH

V_DRLIL

V

V_DRL/PWMIrising

DRL/PWMI Threshold Voltage

PWM Mode

V

V_DRL/PWMIfalling

DRL/PWMI Hysteresis Voltage

DRL/PWMI Pull Down Current

[Analog Dimming]

V_DRLIHYS

I_DRL/PWMI

-

0.5

1.0

-

V_DRLIH- V_DRLIL

0.5

2.0

μA V_DRL/PWMI= 5 V

DCDIM1, DCDIM2

0 % Threshold Voltage

V_{DCD_0 %}

V_{DCD_100 %}

I_DCD

0.17

2.14

-

0.20

2.20

0

0.23

2.26

1

V

V_DCDIM1, V_DCDIM2

DCDIM1, DCDIM2

100 % Threshold Voltage

DCDIM1, DCDIM2 Pin Input

Current

μA V_DCDIM1= V_DCDIM2= 3.0 V

[Outputs LED Status]

FAULT_B Output Low Voltage

FAULT_B Leak Current

V_{FAULT_BOL}

I_{FAULT_B}

t_UVD

-

0.1

0

0.4

1

V

I_{FAULT_B}= 5 mA input

μA V_{FAULT_B}= 5.5 V

Under Voltage Detection Time

16

20

24

ms

EN = Low to High

Under Voltage Detection

Disable Time

VIN UVLO release

VDRV5 UVLO release

t_UVDDIS

16

20

24

ms

TSD release

FAULT_B Pin Holds Low Output

Time

SCP release

OVP release

t_{FAULT_BL}

V_SG

16

20

24

ms

Status Good Voltage

-

mV V_{SNSP_SNSN}rising

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Typical Performance Curves

(Unless otherwise specified V_IN= 13 V, Tj = +25 °C)

2.5

2.0

1.5

1.0

0.5

0.0

650

600

550

500

450

400

350

Tj = +150 °C

Tj = +25 °C

Tj = -40 °C

300

250

200

150

100

50

Tj = +150 °C

Tj = +25 °C

Tj = -40 °C

0

10

20

30

40

50

60

0

10

20

30

40

50

60

Supply Voltage: V_IN[V]

Figure 8. VIN Circuit Current 1 vs Supply Voltage

Figure 9. VIN Circuit Current 2 vs Supply Voltage

5.50

5.40

5.30

5.20

5.10

5.00

4.90

4.80

4.70

4.60

4.50

5.0

4.9

Release

4.8

4.7

4.6

4.5

4.4

4.3

4.2

Detection

4.1

4.0

-50 -25

0

25 50 75 100 125 150

-50 -25

0

25

50

75 100 125 150

Temperature [°C]

Figure 10. VIN UVLO Detect/Release Voltage

vs Temperature

Figure 11. VDRV5 Reference Voltage vs Temperature

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Typical Performance Curves - continued

(Unless otherwise specified V_IN= 13 V, Tj = +25 °C)

330

320

310

300

290

280

270

3.10

3.08

3.06

3.04

3.02

3.00

2.98

2.96

2.94

2.92

2.90

-50 -25

0

25

50

75 100 125 150

-50 -25

0

25

50

75 100 125 150

Temperature [°C]

Figure 12. VREF3 Reference Voltage vs Temperature

(I_VREF3= 0 mA to 2 mA load)

Figure 13. Switching Frequency 1 vs Temperature

(R_RT= 33 kΩ)

2.50

2.45

2.40

2.35

2.30

2.25

2.20

2.15

2.10

100

90

80

70

60

50

40

Tj = +150 °C

Tj = +25 °C

Tj = -40 °C

30

20

10

0

20

40

60

80

100

-50 -25

0

25

50

75 100 125 150

Resistor Connecting to the RT Pin: R_RT[kΩ]

Temperature [°C]

Figure 14. Switching Frequency 2 vs Temperature

(R_RT= 3.9 kΩ)

Figure 15. Minimum OFF Time vs

Resistor Connecting to the RT Pin

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Typical Performance Curves - continued

(Unless otherwise specified V_IN= 13 V, Tj = +25 °C)

175

173

171

169

167

165

163

161

159

157

155

160

158

156

154

152

150

148

146

144

142

140

-50 -25

0

25

50

75 100 125 150

-50 -25

0

25

50

75 100 125 150

Temperature [°C]

Figure 16. LED Current Sense Voltage 100 %

vs Temperature

Figure 17. LED Current Sense Voltage 90 %

vs Temperature

(V_DCDIM1= V_DCDIM2= 2.5 V)

(V_DCDIM1= 2.0 V, V_DCDIM2= 2.5 V)

17.5

17.1

16.7

16.3

15.9

15.5

2.10

2.08

2.06

2.04

2.02

2.00

1.98

1.96

1.94

1.92

1.90

-50 -25

0

25 50 75 100 125 150

Temperature [°C]

-50 -25

0

25

50

75 100 125 150

Temperature [°C]

Figure 18. LED Current Sense Voltage 10 %

vs Temperature

Figure 19. Common-mode Input Range High Side

Voltage Detection vs Temperature

(V_DCDIM1= 0.4 V, V_DCDIM2= 2.5 V)

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Typical Performance Curves - continued

(Unless otherwise specified V_IN= 13 V, Tj = +25 °C)

120

115

110

105

100

95

1.10

1.08

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

90

85

80

-50 -25

0

25 50 75 100 125 150

Temperature [°C]

-50 -25

0

25

50

75 100 125 150

Temperature [°C]

Figure 20. Over Voltage Protection Detect Voltage

vs Temperature

Figure 21. Under Voltage Detection Threshold Voltage

vs Temperature

480

460

440

420

400

380

360

340

320

100

80

60

40

Tj = +150 °C

Tj = +25 °C

Tj = -40 °C

20

0

-50 -25

0

25

50

75 100 125 150

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

DSET Voltage: V_DSET[V]

Temperature [°C]

Figure 22. PWM Dimming Frequency vs Temperature

Figure 23. PWM Dimming Duty vs DSET Voltage

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Typical Performance Curves - continued

(Unless otherwise specified V_IN= 13 V, Tj = +25 °C)

8.6

8.4

8.2

8.0

7.8

7.6

7.4

7.2

50.0

47.5

45.0

42.5

40.0

37.5

35.0

32.5

30.0

-50 -25

0

25

50 75 100 125 150

-50 -25

0

25 50 75 100 125 150

Temperature [°C]

Figure 24. PDRV Output Low Voltage vs Temperature

Figure 25. Hiccup Time vs Temperature

0

-1

-2

-3

-4

Tj = +150 °C

Tj = +25 °C

Tj = -40 °C

-5

-6

-7

-8

-9

-10

5.0

15.0

25.0

35.0

45.0

55.0

65.0

SNSP Votage: V_SNSP[V]

Figure 26. PDRV Output Low Voltage vs SNSP Voltage

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BD18353EFV-M BD18353MUF-M

Typical Performance Curves - continued

(Application Examples 1 BOOST (Position Mode / DRL Mode))

EN

3.0 V/div

EN

3.0 V/div

COMP

2.0 V/div

COMP

2.0 V/div

VOUT

10.0 V/div

VOUT

10.0 V/div

10.0 ms/div

ILED

500 mA/div

ILED

500 mA/div

2.0 ms/div

Figure 27. EN Power ON (DRL Mode)

Figure 28. EN Power ON (PWM Mode)

VIN

5.0 V/div

VIN

5.0 V/div

COMP

2.0 V/div

COMP

2.0 V/div

VOUT

10.0 V/div

ILED

500 mA/div

VOUT

10.0 V/div

10.0 ms/div

ILED

500 mA/div

10.0 ms/div

Figure 29. VIN Power ON (DRL Mode)

Figure 30. VIN Power OFF (DRL Mode)

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Typical Performance Curves - continued

(Application Examples 1 BOOST (Position Mode / DRL Mode))

VIN

5.0 V/div

VIN

5.0 V/div

COMP

2.0 V/div

COMP

2.0 V/div

VOUT

10.0 V/div

10.0 ms/div

VOUT

10.0 V/div

10.0 ms/div

ILED

500 mA/div

ILED

500 mA/div

Figure 31. VIN Power ON (PWM Mode)

Figure 32. VIN Power OFF (PWM Mode)

PWMI

3.0 V/div

PWMI

3.0 V/div

PDRV

10.0 V/div

2.0 ms/div

ILED

500 mA/div

ILED

500 mA/div

2.0 ms/div

Figure 33. PWM Mode → DRL Mode

Figure 34. DRL Mode → PWM Mode

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Typical Performance Curves - continued

(Application Examples 1 BOOST (Position Mode / DRL Mode))

VOUT

20.0 V/div

VOUT

20.0 V/div

GL

5.0 V/div

GL

5.0 V/div

FAULT_B

5.0 V/div

FAULT_B

5.0 V/div

ILED

1.0 A/div

50.0 ms/div

ILED

1.0 A/div

50.0 ms/div

Figure 35. LED Open Operation (Normal → Open)

DRL Mode

Figure 36. LED Open Operation (Open → Normal)

DRL Mode)

VOUT

10.0 V/div

VOUT

10.0 V/div

GL

5.0 V/div

GL

5.0 V/div

FAULT_B

5.0 V/div

FAULT_B

5.0 V/div

ILED

1.0 A/div

20.0 ms/div

ILED

1.0 A/div

20.0 ms/div

Figure 37. SCP Operation (Normal → Short)

DRL Mode

Figure 38. SCP Operation (Short → Normal)

DRL Mode

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Typical Performance Curves - continued

(Application Examples 1 BOOST (Position Mode / DRL Mode))

VOUT

20.0 V/div

VOUT

20.0 V/div

GL

5.0 V/div

GL

5.0 V/div

FAULT_B

5.0 V/div

FAULT_B

5.0 V/div

50.0 ms/div

ILED

1.0 A/div

Figure 39. LED Open Operation (Normal → Open)

PWM Mode

Figure 40. LED Open Operation (Open → Normal)

PWM Mode

VOUT

10.0 V/div

VOUT

10.0 V/div

GL

5.0 V/div

GL

5.0 V/div

FAULT_B

5.0 V/div

FAULT_B

5.0 V/div

20.0 ms/div

ILED

1.0 A/div

20.0 ms/div

ILED

1.0 A/div

Figure 41. SCP Operation (Normal → Short)

PWM Mode

Figure 42. SCP Operation (Short → Normal)

PWM Mode

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BD18353EFV-M BD18353MUF-M

Typical Performance Curves - continued

(Application Examples 1 BOOST (Position Mode / DRL Mode))

RT

100 mV/div

RT

100 mV/div

GL

2.0 V/div

GL

2.0 V/div

ILED

500 mA/div

ILED

500 mA/div

1.0 ms/div

Figure 43. SSFM Operation (DRL Mode)

Figure 44. SSFM Operation (PWM Mode)

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Application Examples

1 BOOST (Position Mode / DRL Mode)

BATT = 8 V to 18 V

LED = 8 series, Vf = 3.0 V (Typ), 3.5 V (Max)

LED Current = 1.04 A

VIN Enable Threshold = 6.1 V

OVP Setting Voltage = 51.9 V

DC/DC Switching Frequency = 300 kHz

LFILT

BATT

C_FILT

C_IN1

C_IN2

C_IN3

L1

U1 BD18353EFV-M/MUF-M

C_VIN

R_DRL

VIN

DRL/PWMI

VDRV5

R_EN1

D1

C_VDRV5

C_OUT1C_OUT2C_OUT3C_OUT4C_OUT5

EN

R_EN2

C_EN

M1

GND

GL

CS

RGL

VREF3

DCDIM1

DCDIM2

COMP

RT

R_OPUD1

R_SLP

R_CS

PGND

OPUD

SNSP

SNSN

C_OPUD

R_OPUD2

C_COMP

R_COMP

R_SNS

R_RT

Q1

DSET

FAULT_B

PDRV

M2

R_PDRV

VDRV5

SSFM_B

R_{SSFM_B}

R_{FAULT_B}

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1 BOOST (Position Mode / DRL Mode) - continued

1.1 Recommended Parts List

Parts

IC

Symbol

U1

Parts Name

BD18353EFV-M/MUF-M

MCR03

Value

-

Unit

-

Product Maker

ROHM

murata

R_EN1

51

kΩ

Ω

R_EN2

MCR03

10

R_DSET1

R_DSET2

R_COMP

R_RT

MCR03

39

MCR03

10

MCR03

33

MCR03

33

kΩ

Ω

R_{FAULT_B}

R_{SSFM_B}

R_PDRV

R_SNS

MCR03

10

MCR03

47

Resistor

MCR03

0

LTR18

0.16

560

11

Ω

R_OPUD1

R_OPUD2

R_CS

MCR03

kΩ

Ω

MCR03

LTR18

0.024

10

R_GL

MCR03

Ω

R_SLP

MCR03

0

kΩ

μF

pF

μF

R_DRL

MCR03

10

C_FILT

GCM32ER71H475KA

GCM188L81H104KA

GCM155R71H103KA

GCM21BR11E105KA

GCM155R72A102KA

GCM21BR71E225KA

GCJ188R72A104KA

4.7

0.1

0.01

1

C_IN1

C_IN2

C_IN3

C_VIN

C_EN

Capacitor

C_COMP

C_OPUD

C_VDRV5

C_OUT1

C_OUT2, C_OUT3

1000

2.2

0.1

,

GCM32DC72A475KE

4.7

μF

murata

C_OUT4, C_OUT5

L_FILT

L1

CLF6045NIT-2R2N-D

MSS1278-103MLB

RBQ10BM65AFHTL

IRLR3110ZTRPBF

2.2

10

-

μH

-

TDK

Inductor

Coil Craft

ROHM

D1

Diode

MOSFET

M1

-

Infineon

ON

MOSFET

Transistor

M2

Q1

FDC3535

-

Semiconductor

SST2907AHZG

ROHM

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BD18353EFV-M BD18353MUF-M

Application Examples - continued

2 BOOST to VIN (Position Mode / DRL Mode)

Position Mode

Position = 13 V

LED = 4 series, Vf = 3.0 V (Typ)

LED Current = 1.04 A

PWM Frequency = 400 Hz

PWM Dimming Duty = 10.6 %

VIN Enable Threshold = 6.1 V

OVP Setting Voltage = 51.9 V

DC/DC Switching Frequency = 412 kHz

DRL Mode

DRL = 13 V

LED = 4 series, Vf = 3.0 V (Typ)

LED Current = 1.04 A

PWM Dimming Duty = 100 %

VIN Enable Threshold = 6.1 V

OVP Setting Voltage = 51.9 V

DC/DC Switching Frequency = 412 kHz

DRL

C_IN1

C_IN2

C_IN3

Position

C_OUT4

C_OUT5

L1

U1 BD18353EFV-M/MUF-M

C_VIN

R_DRL

VIN

DRL/PWMI

VDRV5

GL

R_EN1

D1

C_VDRV5

C_OUT1C_OUT2

C_OUT3

EN

R_EN2

C_EN

M1

R_OPUD1

GND

R_GL

VREF3

DCDIM1

DCDIM2

COMP

RT

CS

Q2

R_SLP

R_CS

PGND

OPUD

SNSP

SNSN

C_OPUD

ROPUD2

C_COMP

R_COMP

R_SNS

R_RT

Q1

R_DSET1

DSET

FAULT_B

PDRV

M2

R_PDRV

R_DSET2

VDRV5

SSFM_B

R_{SSFM_B}

R_{FAULT_B}

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2 BOOST to VIN (Position Mode / DRL Mode) - continued

2.1 Recommended Parts List

Parts

IC

Symbol

U1

Parts Name

BD18353EFV-M/MUF-M

MCR03

Value

-

Unit

-

Product Maker

ROHM

murata

R_EN1

51

kΩ

Ω

R_EN2

MCR03

10

R_DSET1

R_DSET2

R_COMP

R_RT

MCR03

39

MCR03

10

MCR03

33

MCR03

24

kΩ

Ω

R_{FAULT_B}

R_{SSFM_B}

R_PDRV

R_SNS

MCR03

10

MCR03

47

Resistor

MCR03

0

LTR18

0.16

680

18

Ω

R_OPUD1

R_OPUD2

R_CS

MCR03

kΩ

Ω

MCR03

LTR18

0.024

10

R_GL

MCR03

Ω

R_SLP

MCR03

2.4

10

kΩ

μF

pF

μF

R_DRL

MCR03

C_FILT

GCM32ER71H475KA

GCM188L81H104KA

GCM155R71H103KA

GCM21BR11E105KA

GCM155R72A102KA

GCM21BR71E225KA

GCJ188R72A104KA

4.7

0.1

0.01

1

C_IN1

C_IN2

C_IN3

C_VIN

C_EN

Capacitor

C_COMP

C_OPUD

C_VDRV5

C_OUT1

C_OUT2, C_OUT3

1000

2.2

0.1

,

GCM32DC72A475KE

4.7

μF

murata

C_OUT4, C_OUT5

Inductor

Diode

L1

D1

M1

MSS1278-103MLB

RBQ10BM65AFHTL

IRLR3110ZTRPBF

10

-

μH

Coil Craft

ROHM

-

Infineon

MOSFET

Transistor

ON

M2

FDC3535

-

Semiconductor

Q1

Q2

SST2907AHZG

-

ROHM

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Application Examples - continued

3 SEPIC

Position Mode

Position = 13 V

LED = 4 series, Vf = 3.0 V (Typ)

LED Current = 1.04 A

PWM Frequency = 400 Hz

PWM Dimming Duty = 10.6 %

VIN Enable Threshold = 6.1 V

OVP Setting Voltage = 51.9 V

DC/DC Switching Frequency = 412 kHz

DRL Mode

DRL = 13 V

LED = 4 series, Vf = 3.0 V (Typ)

LED Current = 1.04 A

PWM Dimming Duty = 100 %

VIN Enable Threshold = 6.1 V

OVP Setting Voltage = 51.9 V

DC/DC Switching Frequency = 412 kHz

DRL

Position

L1

C_IN1

C_IN2

C_IN3

U1 BD18353EFV-M/MUF-M

C_VIN

R_DRL

VIN

DRL/PWMI

VDRV5

GL

R_EN1

D1

C_SW

C_VDRV5

C_OUT1C_OUT2C_OUT3C_OUT4C_OUT5

EN

M1

R_EN2

C_EN

GND

R_GL

VREF3

DCDIM1

DCDIM2

COMP

RT

CS

R_OPUD1

RSLP

R_CS

PGND

OPUD

SNSP

SNSN

C_OPUD

R_OPUD2

C_COMP

R_COMP

RSNS

R_RT

Q1

R_DSET1

DSET

FAULT_B

PDRV

M2

R_PDRV

R_DSET2

VDRV5

SSFM_B

R_{SSFM_B}

R_{FAULT_B}

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3 SEPIC - continued

3.1 Recommended Parts List

Parts

IC

Symbol

U1

Parts Name

BD18353EFV-M/MUF-M

MCR03

Value

-

Unit

-

Product Maker

ROHM

murata

-

R_EN1

51

kΩ

Ω

R_EN2

MCR03

10

R_DSET1

R_DSET2

R_COMP

R_RT

MCR03

39

MCR03

10

MCR03

15

MCR03

24

kΩ

Ω

R_{FAULT_B}

R_{SSFM_B}

R_PDRV

R_SNS

MCR03

10

MCR03

47

Resistor

MCR03

0

LTR18

0.16

470

11

Ω

R_OPUD1

R_OPUD2

R_CS

MCR03

kΩ

Ω

MCR03

LTR18

0.024

10

R_GL

MCR03

Ω

R_SLP

MCR03

2.4

10

kΩ

μF

-

R_DRL

MCR03

C_IN1

GCM32ER71H475KA

-

4.7

-

C_IN2

C_IN3

C_VIN

-

C_EN

GCM155R71H103KA

GCM21BR11E105KA

GCM155R72A102KA

GCM21BR71E225KA

GCJ188R72A104KA

GCM32DC72A475KE

0.01

1

μF

pF

μF

murata

C_COMP

C_OPUD

C_VDRV5

C_OUT1

C_SW

Capacitor

1000

2.2

0.1

4.7 x 2

C_OUT2, C_OUT3

C_OUT4, C_OUT5

,

GCM32DC72A475KE

4.7

μF

murata

Inductor

Diode

L1

D1

M1

MSD1278T-103MLB

RBQ10BM65AFHTL

IRLR3110ZTRPBF

10

-

μH

Coil Craft

ROHM

-

Infineon

MOSFET

Transistor

ON

M2

Q1

FDC3535

-

Semiconductor

SST2907AHZG

ROHM

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Application Parts Selection Method (Boost Mode Application)

Refer to Application Examples 1. BOOST (Position Mode / DRL Mode).

A constant setting sheet is available. Contact ROHM directly.

Select application parts by the following procedure.

1. Enable Setting.

2. PWM Dimming Duty Setting.

3. Switching Frequency Setting.

4. Derivation of input peak current (I_{L_MAX}).

Feedback of

change value

5. Over Current protection Setting.

6. Inductor Selection.

7. OVP (LED Open) Detection Voltage Setting.

8. Diode and MOSFET Selection.

9. Output Capacitor Selection.

10. Input Capacitor Selection.

11. Feedback Compensation.

12. Actual Operation Confirmation.

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Application Parts Selection Method (Boost Mode Application) - continued

1 Enable Setting

The BD18353EFV-M/MUF-M can be ON/OFF controlled by the EN pin.

Design value: V_INON= 6.1 V, V_INOFF= 5.5 V

(

)

ꢇ푁2

(

)

푅

ꢖ 푅

5ꢃ ꢙꢚ ꢖꢃꢄ ꢙꢚ

ꢃꢄ ꢙꢚ

ꢇ푁1

ꢁ

=

× ꢁ_퐸ꢂꢕ퐻

× ꢁ_퐸ꢂꢕ퐿

=

× ꢌ.ꢍ = 6.ꢌ

[V]

ꢕꢂ푂ꢂ

푅

ꢇ푁2

(

)

ꢖ 푅

ꢇ푁2

(

)

푅

5ꢃ ꢙꢚ ꢖꢃꢄ ꢙꢚ

ꢃꢄ ꢙꢚ

ꢇ푁1

ꢁ

ꢕꢂ푂퐹퐹

=

× ꢍ.ꢛ = ꢜ.ꢝꢛ

푅

ꢇ푁2

2 PWM Dimming Setting (Internal PWM Dimming Signal Generator)

The BD18353EFV-M/MUF-M has a built-in PWM dimming pulse generation circuit. Set the duty with the built-in ramp

waveform and the voltage input to the DSET pin. The DSET pin voltage is set from the VREF3 pin by resistance voltage

division.

Design value: PWM Dimming Duty (D_PWM) = 10.6 %

ꢉ

ꢆꢀꢇꢈ2

푉

ꢉꢇꢎ3

×

− 푉

ꢉ퐴ꢊꢋ퐵

ꢉ

+ ꢉ

ꢆꢀꢇꢈ1

ꢆꢀꢇꢈ2

ꢅ_푃푊푀

=

× ꢌꢍꢍ

푉

− 푉

ꢉ퐴ꢊꢋ퐵

ꢉ퐴ꢊꢋꢋ

10 푘훺

3ꢞ 푘훺 + 10 푘훺

ꢐ.ꢄꢄ ×

− ꢄ.4ꢄ

× ꢌꢍꢍ = ꢌꢍ.6

[%]

ꢑ.4ꢄ − ꢄ.4ꢄ

3 Switching Frequency Setting

The switching frequency of the DC/DC can be set by the resistor R_RTconnected to the RT pin.

Design value: Switching Frequency = 300 kHz

99ꢄꢄ

푓

푆푊ꢃ

≒

× ꢌꢍ^ꢐ=

× ꢌꢍ^ꢐ= ꢒꢍꢍ

[kHz]

푅

ꢐꢐ ꢙꢚ

ꢉꢈ

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Application Parts Selection Method (Boost Mode Application) - continued

4 Derivation of Input Peak Current I_{L_MAX}(V_DCDIM1> 2.5 V, V_DCDIM2> 2.5 V)

4.1 Calculation of Output Voltage (V_OUT

)

BOOST Setting:

ꢁ_푂푈푇= ꢁ

× ꢠ ꢡ ꢁ_{푆ꢂ푆_ꢃꢄꢄ %}ꢡ ꢢ_{푂ꢂ_푃푊푀퐹퐸푇}× 퐼_퐿퐸퐷

ꢟ_퐿퐸퐷

= ꢒ × 8 ꢡ ꢍ.ꢌ667 ꢡ ꢍ.ꢣ × ꢌ ≈ ꢣꢝ.ꢝ

[V]

Where:

ꢁ

ꢠ

is the Vf of LED (Typ: 3.0 V, Max: 3.5 V).

is the number of series LED.

ꢟ_퐿퐸퐷

ꢢ_{푂ꢂ_푃푊푀퐹퐸푇}is the ON resistance of MOSFET for PWM Dimming. (M1)

퐼_퐿퐸퐷is the output LED current.

4.2 Calculation of DC/DC Switching Duty (D_SW

)

푉

− 푉 ꢑ4 푉 − ꢃꢐ 푉

ꢗꢘꢈ

ꢤ푁

ꢅ_푆푊

=

≈ ꢍ.ꢝꢜ8

푉

ꢑ4 푉

ꢗꢘꢈ

4.3 Calculation of Output Current (I_LED

)

푉

ꢄ.ꢃꢥꢥꢦ

ꢄ.ꢃꢥ

ꢀ푁ꢀ_100 %

퐼_퐿퐸퐷

=

≈ ꢌ.ꢍꢝ

[A]

푅

ꢀ푁ꢀ

4.4 Calculation of Input Peak Current (I_{L_MAX}

)

ꢃ

퐼_{퐿_푀ꢓ푋}= 퐼_{퐿_ꢓ푉퐸_푀ꢓ푋}ꢡ 훥퐼_{퐿_푀ꢓ푋}= ꢒ.ꢛꢍ ꢡ ꢌ.ꢒꢍ = ꢜ.ꢣ

[A]

ꢑ

ꢃ

퐼_{퐿_푀ꢕꢂ}= 퐼_{퐿_ꢓ푉퐸_푀ꢕꢂ}ꢧ 훥퐼_퐿

= ꢌ.ꢝ8 ꢧ ꢌ.ꢒꢍ = ꢍ.ꢌ8

ꢊ퐴ꢨ

ꢑ

푉

× ꢕ

ꢑꢪ 푉 × ꢃ ꢓ

= ≈ ꢒ.ꢛꢍ

ꢄ.9 × ꢪ

ꢗꢘꢈ_ꢊ퐴ꢨ

ꢩꢇꢆ

퐼_{퐿_ꢓ푉퐸_푀ꢓ푋}

퐼_{퐿_ꢓ푉퐸_푀ꢕꢂ}

=

휂 × 푉

ꢤ푁_ꢊꢤ푁

푉

× ꢕ

ꢑ4 푉 × ꢃ ꢓ

≈ ꢌ.ꢝ8

ꢄ.9 × ꢃꢪ

ꢗꢘꢈ_ꢊꢤ푁

ꢩꢇꢆ

=

[A]

휂 × 푉

ꢤ푁_ꢊ퐴ꢨ

푉

(푉

− 푉 )

ꢤ푁

ꢃ

ꢤ푁

ꢗꢘꢈ

훥퐼_{퐿_푀ꢓ푋}

=

×

퐿

푉

ꢟ

ꢗꢘꢈ

ꢀꢫ_ꢊꢤ푁

ꢃ4 푉

(ꢑꢪ 푉 − ꢃ4 푉)

ꢑꢪ 푉

ꢃ

=

×

≈ ꢣ.ꢜꢛ

[A]

ꢃꢄ 휇퐻

ꢑꢦꢄ ꢙ퐻푧

Where:

퐼_{퐿_푀ꢓ푋}

퐼_{퐿_푀ꢕꢂ}

is the maximum inductor current.

is the minimum inductor current.

is the mean inductor current.

퐼_{퐿_ꢓ푉퐸}

퐼_{퐿_ꢓ푉퐸_푀ꢓ푋}

퐼_{퐿_ꢓ푉퐸_푀ꢕꢂ}

훥퐼_{퐿_ꢓ푉퐸}

ꢬ

is the maximum mean inductor current.

is the minimum mean inductor current.

is the maximum inductor ripple current.

is the Efficiency.

푓

is the minimum switching frequency.

푆푊_푀ꢕꢂ

●Assign minimum input voltage for calculation.

●BD18353EFV-M/MUF-M adopts current mode DC/DC converter control. When I_{L_MIN}is positive, it becomes to be in the

consecutive modes, and it will be in the discontinuity mode when I_{L_MIN}is negative. Feedback characteristics are easy to

become insufficient in the discontinuous mode, and responsiveness turns worse, and a switching waveform pattern

becomes irregular, and stability is easy to turn worse. Therefore it is sufficient validation of feedback characteristics are

recommended.

●η (efficiency) is calculated as 90 %.

●In the case of V_DCDIM1≤ 2.5 V or V_DCDIM2≤ 2.5 V, calculate I_LEDwith reference to Description of Blocks 5 Analog Dimming

(DCDIM).

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Application Parts Selection Method (Boost Mode Application) - continued

5 Over Current Protection Setting

Select R_CS(resistance for over current detection) to realize below.

Design value: Over current detection = 12.5 A

푉

ꢭꢀꢗꢭꢋ_ꢊꢤ푁

퐼_{푂퐶푃_푀ꢕꢂ}

=

> 퐼_{퐿_푀ꢓ푋}

[A]

푅

ꢭꢀ

푉

ꢄ.ꢑꢦ5

ꢭꢀꢗꢭꢋ_ꢊꢤ푁

=

≈ ꢌꢌ.ꢝ6 > ꢜ.ꢣ

ꢄ.ꢄꢑ4

푅

ꢭꢀ

Where:

퐼_{푂퐶푃_푀ꢕꢂ}

is the minimum over current detection current.

is the minimum over current detection voltage.

ꢁ

퐶푆푂퐶푃_푀ꢕꢂ

Set a sufficient margin in consideration of the variation of the inductor.

6 Inductor Selection

For the purpose of stabilizing current mode DC/DC converter operation, adjustment of L value within the following condition

is recommended.

Design value: R_SLP= 0.0 kΩ

ꢯꢰ

(

)

푉

ꢗꢘꢈ

− 푉

× 푅 × 푅 × ꢃ.5 × ꢃꢄ

ꢤ푁

ꢭꢀ

ꢉꢈ

ꢮ >

4 ꢙ ꢖ 푅

ꢀꢩꢋ

ꢯꢰ

(

)

ꢑꢪ − ꢪ × ꢑ4.ꢑ4 푚 × ꢐꢐ.ꢐꢐ ꢙ × ꢃ.5 × ꢃꢄ

≈ 6

[μH]

[µH]

4 ꢙ

Design value: R_SLP= 1.2 kΩ

ꢯꢰ

(

)

ꢑꢪ − ꢪ × ꢑ4.ꢑ4 푚 × ꢐꢐ.ꢐꢐ ꢙ × ꢃ.5 × ꢃꢄ

ꢮ >

≈ ꢝ.7

4 ꢙ ꢖ ꢃ.ꢑ ꢙ

Reduction of calculated value will increase stability, but may reduce responsiveness such as power voltage variation. If

the above formula is not satisfied, the switching becomes unstable due to sub-harmonic oscillation, and the LED may flicker.

The condition can be eased by adding R_SLP

.

However, be aware that adding R_SLPwill also change OCP detection (I_OCP)

level. The formula for calculating the OCP detection level (I_OCP) when R_SLPis added is as follows.

Design value: R_SLP= 1.2 kΩ

ꢆ

1.0ꢰ

× 1.2 × 10

ꢀꢫ_ꢊ퐴ꢨ

ꢱ푉

−

×

× 푅

ꢳ

ꢀꢩꢋ

ꢭꢀꢗꢭꢋ_ꢊꢤ푁

ꢯꢰ

ꢲ

ꢉ

ꢀꢫ_ꢊꢤ푁

ꢉꢈ

퐼_{푂퐶푃_푀ꢕꢂ}

=

> 퐼_{퐿_푀ꢓ푋}

[A]

푅

ꢭꢀ

1.0ꢰ

33 푘 × 1.2 × 10

0.ꢵ2

2ꢵ0 푘

ꢴꢄ.ꢑꢦ5 −

×

× ꢃ.ꢑ ꢙꢶ

ꢯꢰ

퐼_{푂퐶푃_푀ꢕꢂ}

≈ 7.8ꢛ > 퐼_{퐿_푀ꢓ푋}

ꢄ.ꢄꢑ4

Where:

ꢅ_{푆푊_푀ꢓ푋}

is the maximum DC/DC switching duty.

is the minimum switching frequency.

is the maximum inductor current.

푓

푆푊_푀ꢕꢂ

퐼_{퐿_푀ꢓ푋}

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Application Parts Selection Method (Boost Mode Application) - continued

7 OVP (LED Open) Detection Voltage Setting

LED open detection voltage needs higher voltage setting than overshoot of output voltage at start up to avoid start up

failure. Further, output voltage at the time of LED open detection (V_{OUT_OVP}) is calculable as shown below by setting

R_OPUD1and R_OPUD2

.

Design value: Over voltage detection = 51.9 V

푅

ꢖ 푅

ꢗꢋꢘꢆ2

ꢗꢋꢘꢆ1

ꢁ_{푂푈푇_푂푉푃}

=

× ꢁ_푂푉푃

푅

ꢗꢋꢘꢆ2

^{5ꢥꢄ ꢙ ꢖ ꢃꢃ ꢙ}× ꢌ.ꢍ ꢁ ≈ ꢜꢌ.ꢛ (ꢏ푦푝)

[V]

ꢃꢃ ꢙ

Where:

ꢁ_{푂푈푇_푂푉푃}is the OVP (LED Open) Detection Voltage.

R_OPUD1, R_OPUD2resistor will be the current discharge path for the output capacitor when PWM = Low.

Improperly the resistor value can increase VOUT ripple and cause the LED to flicker. Therefore, it is recommended to

select R_OPUD1in the range of 500 kΩ to 1000 kΩ.

Sufficient verification for LED flickering is required with actual application as behavior differs by characteristic of output

capacitor and LED. (V_OUTdrop can be prevented by inserting bigger output capacitor or ODT resistance.)

8 Diode and MOSFET Selection

Selection of MOSFET M1

Select a MOSFET (M1) whose VDS rating is higher than the maximum voltage for OVP (LED open) detection.

푅

ꢖ 푅

ꢗꢋꢘꢆ2

ꢗꢋꢘꢆ1

ꢷꢌ ꢁ_퐷푆> ꢁ_{푂푈푇_푂푉푃_푀ꢓ푋}

=

× ꢁ_{푂푉푃_푀ꢓ푋}

푅

ꢗꢋꢘꢆ2

5ꢥꢄ ꢙ ꢖ ꢃꢃ ꢙ

ꢃꢃ ꢙ

(

)

× ꢌ.ꢍꢝ ꢁ ≈ ꢜꢝ ꢷ푎푥

[V]

Where:

ꢷꢌ ꢁ_퐷푆

is the maximum rating voltage between drain and source of M1.

ꢁ_{푂푈푇_푂푉푃_푀ꢓ푋}is the maximum over voltage detection voltage.

The RMS current rating (I_{DS_RMS}) flowing between the drain - source of M1 can be calculated as follows.

√

퐼_{퐷푆_푅푀푆}= ꢌ.ꢒ × ꢸ퐼_{퐿_ꢓ푉퐸}ꢹ^ꢣ × ꢅ_푆푊

Where:

퐼_{퐿_ꢓ푉퐸}is the mean inductor current.

ꢅ_푆푊is the Switching Duty.

A loss of M1 is calculated next. The loss of M1 has Switching loss P_LOSS1and M1 On resistance loss P_LOSS2

loss P_LOSS1and M1 On resistance loss P_LOSS2can be calculated as follows.

.

Switching

(

⁾× 푓 × ꢁ_푂푈푇ꢡ ꢁ_퐷ꢃ× 퐼_{퐿_ꢓ푉퐸}

푡

ꢉ

ꢖ 푡

ꢑ

ꢎ

(

)

ꢺ_{퐿푂푆푆ꢃ}

=

푆푊

ꢑ

ꢺ_{퐿푂푆푆ꢑ}= 퐼_{퐿_ꢓ푉퐸}× ꢢ_푂ꢂ× ꢅ_푆푊

Where:

ꢻ_푅is the rise time of M1 drain-source.

ꢻ_퐹is the fall time of M1 drain-source.

ꢁ_퐷ꢃis the forward voltage of D1.

ꢢ_푂ꢂis the ON resistance of M1.

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8 Diode and MOSFET Selection - continued

Selection of rectifier diode D1

For power consumption reduction, use a Schottky Barrier diode for rectification diode D1. The withstand voltage rating of

the diode shall be higher than the OVP (LED Open) detection voltage. In addition, Schottky Barrier diode with low leakage

current shall be selected if PWM dimming is used. Because the leakage current increases with higher temperature

environment, the output capacitor can be discharged in PWM = Low which may result that LED current will be unstable.

The current limit of D1 can be calculated in following formula.

(

)

퐼_퐷ꢃ= 퐼_{퐿_ꢓ푉퐸}× ꢌ ꢧ ꢅ_푆푊

Where:

퐼_{퐿_ꢓ푉퐸}is the mean inductor current.

ꢅ_푆푊is the DC/DC switching duty.

Selection of MOSFET M2

Consider margin and set the rated voltage rather higher than the actual usage condition for LED current and output voltage.

Selection of transistor Q1 for current clamp

It is recommended to insert Q1 to control the flow of excessive large current at the time of anode ground fault. By inserting

Q1, the set current is clamped by the Vf of Q1, so the withstand current of M2 can be suppressed.

For example, when Vf = 0.5 V, the current is clamped at about 3 times the set current. Select the Vce of Q1 that satisfies

the following formula.

ꢁ_퐶퐸> ꢁ_{푂푈푇_푂푉푃_푀ꢓ푋}

Also, select in consideration of hfe, speed and saturation voltage.

9 Output Capacitor Selection

Output capacity includes two purposes. The first is to reduce output ripple. The second is to supply current to LED when

MOSFET (D1) is switched on. The output voltage ripple is influenced by both bulk capacity and ESR. (When a ceramic

capacitor is used, most of the ripple caused by bulk capacity.) Bulk capacity and the ESR can be calculated in lower

formula.

퐷

ꢀꢫ_ꢊ퐴ꢨ

ꢼ_푂푈푇≥ 퐼_퐿퐸퐷

×

ꢽ푉

×ꢟ

ꢀꢫ_ꢊꢤ푁

ꢭꢗꢘꢈ

ꢽ푉

ꢇꢀꢉ

<

ꢕ

ꢩ_ꢊ퐴ꢨ

ꢢ_퐸푆푅

Where:

훥ꢁ

is the influence with the capacitor among output ripple.

퐶푂푈푇

훥ꢁ_퐸푆푅is the ripple which occurs in the ESR of the output capacitor.

is the minimum switching frequency.

푓

푆푊_푀ꢕꢂ

The total output ripple permitted here can be expressed as product of LED current ripple and the equivalent resistance of

the LED. This equivalent resistance is defined as "ΔV / ΔI of the LED current", and it is necessary to calculate from I-V

properties in the data sheet of the selected LED. When the application condition is the number of the driven LED = 8 pcs

(equivalent resistance 0.2 Ω / LED), LED current = 1 A (I_{L_MAX}= 5.2 A), switching duty = 72 %(V_IN= 8 V, V_OUT= 28 V) ,

switching frequency = 300 kHz, LED current ripple = 5%. Then the total output ripple can be calculated as follows.

(

)

ꢁ_{푂푈푇_푅ꢕ푃푃퐿퐸}= ꢌ ꢾ × ꢜ % × ꢍ.ꢣ ꢿ × 8 = 8ꢍ

[mV]

Where:

ꢁ_{푂푈푇_푅ꢕ푃푃퐿퐸}is the V_OUTripple voltage.

If bulk capacity causes 95 % among total output ripple, the output capacitor is calculated as follows.

ꢄ.ꢦꢑ

ꢃ

ꢼ_푂푈푇≥ ꢌ × _{ꢄ.ꢄꢪ × ꢄ.95}

×

≈ ꢒꢌ.6

[µF]

ꢐꢄꢄ ꢙ퐻푧

(

)

푉

ꢄ.ꢄꢪ × ꢄ.ꢄ5

ꢗꢘꢈ_ꢉꢤꢋꢋꢩꢇ

ꢢ_퐸푆푅

<

=

≈ ꢍ.77

[mΩ]

ꢕ

5.ꢑ

ꢩ_ꢊ퐴ꢨ

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9 Output Capacitor Selection - continued

However the capacitance of output capacitor mentioned above is minimum capacitance. Therefore select parts considering

the tolerance of the capacitor and DC bias properties. Furthermore, because small external part connected to output may

lead to bigger ripple on output voltage, which may result in LED flickering, sufficient verification of the actual application is

required. Increase output capacitors if judged to be required from the verification. In addition, an acoustic noise may be

produced by the piezoelectric effect of the ceramic capacitor during PWM dimming. Low ESR electrolytic capacitor used

together with a ceramic capacitor may reduce this noise. But capacitance may largely decrease with a change of the

voltage with the ceramic capacitor and may not accord with the numerical value calculated from theory.

10 Input Capacitor Selection

In DC/DC converter, since peak current flows between input and output, a capacitor is also required in the input side.

Therefore, low ESR capacitors with capacitor of 10 µF or more and ESR component of 100 mΩ or less are recommended

as input capacitors. If a capacitor out of the range is selected, an excessive ripple voltage may be superimposed on the

input voltage and the LSI may malfunction.

∆ꢕ

ꢩ

ꢼ_ꢕꢂ≥

ꢪ × 푉

× ꢟ

ꢀꢫ

ꢤ푁_ꢉꢤꢋꢋꢩꢇ

Where:

ꢁ

is the V_INripple voltage.

ꢕꢂ_푅ꢕ푃푃퐿퐸

11 Feedback Compensation

●Concerning stability condition of application.

Stability condition for system with negative feedback is as shown below.

Phase-lag when gain is 1 (0 dB) is no more than 150 ° (namely, phase margin is 30 ° or more).

Further, since DC/DC converter application is sampled by switching frequency, GBW of the entire system is set to be 1 /

10 or less of switching frequency. To wrap up, target characteristics of application are as shown below.

●Phase-lag when gain is 1 (0 dB) is 150 ° or less (namely, phase margin is 30 ° or more).

●GBW at the time (namely, frequency when gain is 0 dB) is 1/10 or less of switching frequency. Therefore, in order to

raise responsiveness by limiting GBW, higher switching frequency is required.

●Phase margin: 60 ° or more

●GBW: 1/20 or less of switching frequency.

is recommended.

The knack for securing stability feedback compensation is to insert phase-lead f_Z1near GBW. GBW is determined by C_OUT

and phase-lag f_Pdue to output impedance R_L(= V_OUT/ I_LED).

They are shown in the following formulae.

Phase-lead

ꢃ

푓

푍ꢃ

=

ꢑ 휋 × 퐶

× 푅

ꢭꢗꢊꢋ

Phase-lag

ꢃ

푓 =

푃

ꢑ 휋 × 푅 × 퐶

ꢩ

ꢗꢘꢈ

푉

ꢗꢘꢈ

ꢢ_퐿=

ꢕ

ꢩꢇꢆ

As described above, secure phase margin. For R_Lvalue at max load should be inserted. In addition, with boost DC/DC,

right half plane zero (RHP zero) is to be considered. This zero has a characteristic of zero as a gain and as the pole with

phase. Because it causes an oscillation when this zero effects on a control loop, it is necessary to bring GBW just before

RHP zero. RHP zero f_Z2can be calculated with an equation below and shows good characteristic by setting GBW to be

lower than 1/10 of RHP zero or less.

ꣀ

ꢤ푁

2

푅 × (

ꢩ

)

ꣀ

ꢗꢘꢈ

푓

푍ꢑ

=

ꢑ 휋 × 퐿

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11 Feedback Compensation - continued

Particularly when supply voltage rises and gets close to output voltage, the switching output becomes irregular and ripple of

the output voltage increases. Ripple of the LED current may thereby get bigger.

Since this setting is obtained by simplified, not strict, calculation, adjustment by actual equipment may be required in some

cases.

Further, since these characteristics will vary depending upon substrate layout, load condition, etc., confirm satisfactorily

with actual equipment when planning mass production.

12 Actual Operation Confirmation

Select external parts based on verification with actual equipment since characteristics will vary depending on various

factors such as load current, input voltage, output voltage, inductor value, load capacity, switching frequency and mounting

pattern.

About the attention point at the time of the PCB layout

1. Locate the decoupling capacitor of C_VIN, C_VDRV5close to an LSI pin as much as possible.

2. R_RTlocates it close to the RT pin, and prevent there from being capacity.

3. Because high current may flow in PGND, lower impedance.

4. Prevent noise to be applied to the EN, VREF3, COMP, RT, DCDIM1, DCDIM2, DSET, OPUD, SNSP and SNSN pins.

5. As the GL, CS, PDRV pins are switching, be careful not to affect the neighboring patterns.

6. There is EXP-PAD on the back side of the package.

7. For noise reduction, PGND of R_CSand PGND of C_OUTrecommend to have one common grounds. In addition, consider

the PCB layout so that the current path of M1 → R_CS, R_CS→ PGND and the current path of M1 → D1 → C_OUT→ PGND

are the shortest and with the lowest impedance on the same surface without vias etc.

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I/O Equivalence Circuits

No.

Name

No.

Name

I/O Equivalence Circuit

VDRV5

EN

VREF3

GND

2

4

EN

VREF3

(20)

(2)

GND

VDRV5

5

DCDIM1

DCDIM2

VDRV5

(3)

DCDIM1

DCDIM2

7

COMP

(5)

6

GND

(4)

GND

VDRV5

DSET

VDRV5

8

9

RT

DSET

RT

(6)

(7)

GND

FAULT_B

SSFM_B

PGND

10

(8)

11

FAULT_

B

SSFM_B

(9)

GND

( ) is the VQFN20FV3535 package

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I/O Equivalence Circuits- continued

No.

Name

No.

Name

I/O Equivalence Circuit

SNSP

13

SNSP

SNSN

SNSP

(11)

12

PDRV

PGND

PDRV

OPUD

GL

SNSN

PGND

(10)

14

SNSP - 7.5 V

(12)

VDRV5

OPUD

15

17

CS

(13)

(15)

CS

PGND

VIN

VDRV5

18

19

VDRV5

GND

VDRV5

GL

(16)

(17)

PGND

DRL/

PWMI

20

DRL/

PWMI

(18)

GND

( ) is the VQFN20FV3535 package.

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

3. Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

4.

Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Recommended Operating Conditions

The function and operation of the IC are guaranteed within the range specified by the recommended operating

conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical

characteristics.

6. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power

supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and

routing of connections.

7. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

8. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

9. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

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Operational Notes – continued

10. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Example of Monolithic IC Structure

11. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

12. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj

falls below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

13. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection circuit.

14. Functional Safety

“ISO 26262 Process Compliant to Support ASIL-*”

A product that has been developed based on an ISO 26262 design process compliant to the ASIL level described in

the datasheet.

“Safety Mechanism is Implemented to Support Functional Safety (ASIL-*)”

A product that has implemented safety mechanism to meet ASIL level requirements described in the datasheet.

“Functional Safety Supportive Automotive Products”

A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the

functional safety.

Note: “ASIL-*” is stands for the ratings of “ASIL-A”, “-B”, “-C” or “-D” specified by each product's datasheet.

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Ordering Information

B D 1

8

3

5

3

x

-

M E 2

Package

EFV: HTSSOP-B20

MUF: VQFN20FV3535

Product Rank

M: for Automotive

Packaging and forming specification

E2: Embossed tape and reel

Marking Diagrams

HTSSOP-B20 (TOP VIEW)

Part Number Marking

LOT Number

D 1 8 3 5 3

Pin 1 Mark

VQFN20FV3535 (TOP VIEW)

Part Number Marking

BD

LOT Number

18353

Pin 1 Mark

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Physical Dimension and Packing Information

Package Name

HTSSOP-B20

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Physical Dimension and Packing Information

Package Name

VQFN20FV3535

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Revision History

Date

Revision

001

Changes

16.Mar.2020

New Release

Change Electrical Characteristics

VDRV5 Reference Voltage

Before: I_VDRV5= 0 mA to 10 mA

After: I_VDRV5= 0 mA to 10 mA load

VDRV5 Drop Voltage

Before: I_VDRV5= 10 mA

After: I_VDRV5= 10 mA load

VREF3 Reference Voltage

Before: I_VREF3= 0 mA to 2 mA

After: I_VREF3= 0 mA to 2 mA load

OSCILLATOR Circuit

Before: Spread Spectrum Frequency Moduration Width

After: Spread Spectrum Frequency Modulation Width

GL ON Resistor High

Before: I_GL= -10 mA

After: I_GL= 10 mA load

GL ON Resistor Low

Before: I_GL= +10 mA

After: I_GL= 10 mA input

COMP Sink Current

Before: V_DCDIM= 0 V

After: V_DCDIM1= V_DCDIM2= 0 V

Internal Ramp Bottom Voltage

Before: (Min) 0.38 (Typ) 0.40 (Max) 0.42

After: (Min) V_REF3/ 3 x 0.4 - 0.02 (Typ) V_REF3/ 3 x 0.4 (Max) V_REF3/ 3 x 0.4 + 0.02

Deletion: V_REF3= 3.0 V

05.Feb.2021

002

Internal Ramp Peak Voltage

Before: (Min) 2.38 (Typ) 2.40 (Max) 2.42

After: (Min) V_REF3/ 3 x 2.4 - 0.02 (Typ) V_REF3/ 3 x 2.4 (Max) V_REF3/ 3 x 2.4 + 0.02

Deletion: V_REF3= 3.0 V

PDRV Pull Up ON Resistor

Before: V_{SNSP_PDRV}= 7 V, V_SNSP= 30 V, V_DSET= 5 V, V_DRL/PWM= 0 V

After: I_PDRV= 10 mA load, V_SNSP= 30 V, V_DSET= 0 V, V_DRL/PWMI= 0 V

PDRV Pull Down Current

Before: V_DSET= 0 V, V_DRL/PWM= 0 V

After: V_DSET= 5 V, V_DRL/PWMI= 0 V

FAULT_B Output Low Voltage

Before: I_{FAULT_B}= 5 mA

After: I_{FAULT_B}= 5 mA input

Change Typical Performance Curves

Before: VREF3 Reference Voltage vs Temperature (I_VREF3= 0 mA to 2 mA)

After: VREF3 Reference Voltage vs Temperature (I_VREF3= 0 mA to 2 mA load)

Change Application Examples

SEPIC Recommended Parts List Inductor L1

Before: MSS1278T-103MLB

After: MSD1278T-103MLB

Append 14. Functional Safety

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Notice

Precaution on using ROHM Products

(Note 1)

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

,

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.

However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble

cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E

Rev.004

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl₂, H₂S, NH₃, SO₂, and NO₂

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PAA-E

Rev.004


型号：	BD18353EFV-M
厂家：	ROHM
描述：	BD18353EFV-M/MUF-M是1ch LED控制器。内置高边电流检测放大器。通过内置PWM生成电路，可以自由设定PWM调光Duty。通过驱动外置P-ch MOSFET实现了PWM调光。将LED的异常状态输出到FAULT_B端子。内置双系统模拟调光。内置用于模拟调光及PWM调光设定的高精度3.0V输出电源。放大器驱动控制器
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中文：	中文翻译
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