BD9203EFV [ROHM]
Silicon Monolithic Integrated Circuit; 硅单片集成电路型号: | BD9203EFV |
厂家: | ROHM |
描述: | Silicon Monolithic Integrated Circuit |
文件: | 总5页 (文件大小:184K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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STRUCTURE
PRODUCT
Silicon Monolithic Integrated Circuit
White LED Driver for LCD Backlights with step-up DC/DC controller
TYPE
BD9203EFV
FEATURE
・
・
・
・
・
・
・
6CH LED current driver up to 150mA/CH built-in *2
Over voltage protection (OVP), Short circuit protection (SCP), LED open and short detection
Step-up DC/DC controller built-in
PWM and DC Dimming
Programmable timer latch and soft-start period by external capacitor
Over voltage protection (OVP), Short current protection (SCP), LED open and short detection
Under voltage lock out (UVLO)
・ HTSSOP-B28 package
○ ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Symbol
VCC
Limit
36
7
Unit
V
Power Supply Voltage
VREF5V
STB
V
STB Voltage
36
40
40
V
LED Output Voltage
FAIL Output Voltage
LED1~6
FAIL
V
V
SEL, UVLO, PWM1, PWM2, RT,
SS, SLOPE, ISET, VREF,
7
V
Pin Voltage
CP, FB, OVP, CS
N
15
V
W
Power Dissipation
Pd
3.30 *1
-40~+85
-55~+150
150 *2
Operating Temperature Range
Storage Temperature Range
LED Maximum Current
Topr
Tstg
ILED
℃
℃
mA
*1 Pd derated at 26.4 mW/℃ for temperature above Ta=25℃,
mounted on 70mm×70mm×1.6mm 2 layer(cupper area 70mm×70mm)glass-epoxy PCB.
*2 This is the constant current value per 1ch. Please perform setting of the constant current value
in the range that is not beyond a value of Pd.
This product is not designed for protection against radioactive rays.
○ OPERATING CONDITIONS (Ta=25℃)
PARAMETER
Power Supply Voltage
Symbol
VCC
Limit
Unit
V
9~35
CT Oscillation Frequency Range
VREF input voltage range
FCT
100~1000
kHz
VREF
0~VREF5V
V
REV. A
2/4
○ ELECTRICAL CHARACTERISTICS(unless otherwise specified VCC=24V, Ta=25℃)
Limit
TYP.
PARAMETER
Symbol
UNIT
Conditions
MIN.
MAX.
【Total Current Consumption】
STB=3V, LED1~6=ON,
RT=100kΩ
Circuit Current
ICC
IST
-
-
5
0
10
10
mA
uA
Standby Current
STB=0V
【VREF5V】
VREF5V Voltage
VREF5
IREF5
4.9
20
5.0
5.1
-
V
V
IO=0mA
VREF5V source current
【Switching block】
N source resistance
-
RONH
RONL
-
-
7
14
7
Ω
Ω
ION=-10mA
ION=10mA
N sink resistance
3.4
【SOFT START】
SS source current
ISS
-2.0
3.8
-1.0
4.0
-0.5
4.2
uA
V
SS END pin voltage
VSS
SS=SWEEP UP
【Error-Amp block】
LED control voltage
FB sink current
VLED
0.65
40
0.75
100
0.85
200
-40
V
IFBSINK
uA
uA
LED=2.0V, VFB=1.0V
LED=0V, VFB=1.0V
FB source current
【CT Oscillator block】
Oscillation Frequency
RT pin output voltage
SLOPE pin output voltage
MAX DUTY
IFBSOURCE
-200
-100
FCT
VRT
500
1.05
1.05
76
600
1.5
1.5
85
700
1.95
1.95
94
kHz
V
RT=100kΩ
VSLOPE
DMAX
V
%
【OVP】
Over Voltage Protection voltage
OVP hysterisis
VOVP
VOVPHYS
FBOVP
3.8
100
3.5
4.0
200
3.6
4.2
400
3.7
V
mV
V
VOVP=SWEEP UP
VOVP=SWEEP DOWN
PWM1, 2=0V
OVP Feedback Voltage
【SCP】
Short Circuit Protection voltage
【UVLO】
VSCP
0.05
0.20
0.35
V
VOVP=SWEEP DOWN
Operating voltage (VCC)
hysterisis (VCC)
VUVLO_VCC
VUHYS_VCC
VUVLO_U
6.0
150
2.375
50
7.0
300
2.5
8.0
600
V
mV
V
VCC=SWEEP UP
VCC=SWEEP DOWN
UVLO=SWEEP UP
UVLO=SWEEP DOWN
Cancel voltage (UVLO)
hysterisis (UVLO)
【FILTER(CP)】
2.625
200
VUHYS_U
100
mV
CP detection voltage
CP source current
VCP
ICP
1.8
2.0
2.2
V
CP=SWEEP UP
VCP=0V
-2.0
-1.0
-0.5
uA
【LED output (LED1~6)】
LED current accuracy
Open detection voltage
Short detection voltage
【STB】
⊿ILED
VOPEN
VSHORT
-3
-
3
%
V
ILED=40mA
0.05
4.5
0.20
5.0
0.35
5.5
VLED=SWEEP DOWN
VLED=SWEEP UP
V
Input High voltage
Input Low voltage
Input current
STBH
STBL
IEN
2.0
-0.3
13
-
-
VCC
0.8
V
V
25
38
uA
VIN=5V(STB)
【PWM1, PWM2】
Input High voltage
Input Low voltage
Input current
PWMH
PWML
IPWM
2.0
-0.3
-5
-
-
5.0
0.5
5
V
V
0
uA
VIN=5V(PWM1, PWM2)
IOL=1mA
【FAIL output(open drain)】
FAIL Low voltage
VOL
0.05
0.10
0.20
V
(This product is not designed for protection against radioactive rays.)
REV. A
3/4
○ BLOCK DIAGRAM
VIN
CIN
+
CVREF
COUT
VREF5V
UVLO
OSDET
VCC
OVP
CP
UVLO
(VCC)
VCC
UVLO
TSD
OVP
CVCC STB
FILTER
VREG
CP
FAIL
N
SLOPE
PWM COMP
Driver
+
-
-
+
Control
Logic
OSC
RT
SS
Durrent
Sence
CS
PGND3
-
-
-
-
-
-
+
AGND
ERR AMP
FB
RPC
CPC
LED1
LED2
LED3
LED4
LED5
LED6
Current driver
SEL
PWM1
PWM2
○ PACKEGE, MARKING SPECIFICATION
VREF
ISET
PGND1
PGND2
ISET
Open-Short
Detect
BD9203EFV
OSDET
LOT No.
HTSSOP-B28
○ PIN No. & PIN NAME
PIN
PIN
No.
15
PIN Name
No.
Function
PIN Name
Function
1
2
PGND3
N
Power GND
VREF
CP
DC dimming input
Filter set Cap.
DC/DC switching output
16
Active LED channel select pin
(3 state)
3
SEL
17
FB
Error amp output
4
5
FAIL
UVLO
PWM2
PWM1
VCC
Protect signal output
Under voltage lock out input
External PWM input 2
External PWM input 1
Power Supply Voltage
Enable pin
18
19
20
21
22
23
24
25
26
27
28
PGND1
LED1
LED2
LED3
LED4
LED5
LED6
PGND2
SS
LED output GND1
LED output 1
6
LED output 2
7
LED output 3
8
LED output 4
9
STB
LED output 5
10
11
12
13
14
VREF5V
AGND
RT
Internal regulator output
Analog GND
LED output 6
LED output GND2
Soft start period setting Cap.
DC/DC over voltage protection
DC/DC current sense
CT frequency setting R
Slope compensation setting R
LED output current setting R
SLOPE
ISET
OVP
CS
REV. A
4/4
○ Operation Notes
1) Absolute maximum ratings
An excess in the absolute maximum rating, such as supply voltage, temperature range of operating conditions, etc., can break down
the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will
expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2) GND voltage
The potential of GND pin must be minimum potential in all condition. As an exception, the circuit design allows voltages up to -0.3 V
to be applied to the ICT pin.
3) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or
if pins are shorted together.
5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
6) Mutual impedance
Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize ripple
as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and capacitance).
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions
are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example,
as shown in the figures below, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference
among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying
a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Although the circuit design allows voltages
up to -0.3 V to be applied to the ICT pin, voltages lower than this may cause the behavior described above. Use caution when designing
the circuit.
B
(Pin B)
E
TCransistor (NPN)
Resistor
(Pin A)
GND
N
P
P+
P+
N
N
N
P+
P+
P
P substrate
N
N
N
Parasitic elements
GND
P substrate
Parasitic elements
(Pin A)
GND
(Pin B)
C
E
B
Parasitic elements
GND
Other Adjacent Elements
GND
Parasitic elements
Simplified structure of a Monolithic IC
REV. A
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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R1010
A
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