EMX3T2R [ROHM]
General purpose (dual transistors); 通用（双晶体管）
| 型号： | EMX3T2R |
| 厂家： | 
ROHM |
| 描述： | General purpose (dual transistors) |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General purpose (dual transistors)
EMX3 / UMX3N / IMX3
Features
Dimensions (Unit : mm)
Two 2SC2412AK chips in a EMT or UMT or SMT package.
EMX3
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
Inner circuits
1.2
1.6
EMX3 / UMX3N
IMX3
(3)
(2)
(1)
(4)
(5)
(6)
Tr2
Tr2
Tr1
Tr1
ROHM
:
EMT6
Each lead has same dimensions
(4)
(5)
(6)
(3)
(2)
(1)
UMX3N
Package, marking, and packaging specifications
Type
Package
EMX3
EMT6
X3
UMX3N
UMT6
X3
IMX3
SMT6
X3
1.25
2.1
Marking
Code
T2R
TR
T108
3000
0.1Min.
Basic ordering unit (pieces)
8000
3000
ROHM
:
UMT6
Each lead has same dimensions
EIAJ
: SC-88
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
60
50
V
IMX3
7
V
I
C
150
mA
∗1
∗2
EEMX3 / UMX3N
IMX3
150(TOTAL)
300(TOTAL)
150
Collector power
dissipation
P
C
mW
1.6
2.8
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55 to +150
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
0.3Min.
ROHM
:
SMT6
Each lead has same dimensions
EIAJ
:
SC-74
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
Typ.
−
−
Max.
−
−
Conditions
Unit
V
BVCBO
BVCEO
BVEBO
60
50
7
I
I
I
C
=50μA
=1mA
V
C
−
−
−
−
V
E
=50μA
CB=60V
EB=7V
I
CBO
EBO
CE(sat)
FE
−
−
0.1
0.1
0.4
560
−
μA
μA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
−
120
−
−
−
180
2
I
C/I
B
=50mA/5mA
h
−
MHz
V
V
V
CE=6V, I
C
=1mA
=−2mA, f=100MHz
=0mA, f=1MHz
Transition frequency
f
T
CE=12V, I
CB=12V, I
E
E
∗
Output capacitance
Cob
−
3.5
pF
∗Transition frequency of the device.
www.rohm.com
2011.12 - Rev.B
1/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
EMX3 / UMX3N / IMX3
Data Sheet
Electrical characteristics curves
0.50mA
100
80
50
10
8
Ta=25°C
30μA
27μA
24μA
21μA
Ta=25°C
VCE=6V
20
10
5
0.30mA
0.25mA
0.20mA
0.15mA
60
6
18μA
15μA
12μA
9μA
C
°
2
1
100
=
40
4
Ta
0.10mA
0.05mA
0.5
6μA
20
0
2
0
3μA
0.2
0.1
IB=0A
I
B
=0A
12
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
500
500
0.5
Ta=25°C
VCE=5V
Ta=25°C
Ta=100°C
0.2
25°C
V
CE=5V
3V
1V
200
100
50
200
100
50
−55°C
I
C/I
B
=50
20
0.1
10
0.05
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current ( ΙΙ )
0.5
0.2
0.5
IC/IB=10
IC/IB=50
Ta=25°C
V
CE=6V
500
200
Ta=100°C
25°C
−55°C
0.2
0.1
Ta=100°C
25°C
0.1
−55°C
0.05
0.05
0.02
0.01
100
50
0.02
0.01
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
−0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
Fig.9 Gain bandwidth product vs.
emitter current
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
www.rohm.com
2011.12 - Rev.B
2/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
EMX3 / UMX3N / IMX3
Data Sheet
20
Ta=25°C
Ta=25°C
f=32MH
Z
200
100
50
f
I
I
=
1MHz
=0A
=0A
VCB=6V
E
10
5
C
2
1
20
10
−0.2
−0.5
−1
−2
−5
(mA)
−10
0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Base-collector time constant
vs. emitter current
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
www.rohm.com
2011.12 - Rev.B
3/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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