ES6U41T2R [ROHM]
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN;型号: | ES6U41T2R |
厂家: | ROHM |
描述: | Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN 开关 光电二极管 晶体管 |
文件: | 总14页 (文件大小:2385K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ES6U41
ꢀꢀNch 30V 1.5A Small Signal MOSFET + Schottky Barrier Diode
Datasheet
ꢀꢀ
llOutline
ꢀ
SOT-563T
VDSS
30V
240mΩ
±1.5A
0.8W
RDS(on)(Max.)
WEMT6
ID
ꢀ
PD
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llFeatures
llInner circuit
1) Nch MOSFET and shottky barrier diode are
ꢀꢀput in WEMT6 package.
2) High-speed switching and Low on-
ꢀꢀresistance.
3) Low voltage drive(2.5V drive)
4) Built in Low V schottky barrier diode.
F
llPackaging specifications
Embossed
Tape
Packing
llApplication
Reel size (mm)
180
8
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
8000
T2R
U41
Marking
llAbsolutaximum ratins (T 25°C ,unless otherwise specified)
< MOS>
Parameter
Symbol
VDSS
VGSS
ID
Value
30
Unit
rain - Source voltage
V
Gate - Source voltage
±12
±1.5
±6.0
0.75
6.0
V
Continuous drain current
Pulsed drain current
A
*1
IDP
A
I
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation
A
S
*1
I
A
W/element
℃
SP
*2
PD
0.7
Tj
Junction temperature
150
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20160711 - Rev.001
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ES6U41
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
< Diode >
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
VRM
VR
Value
25
Unit
V
20
V
IF
Forward current
0.5
2.0
5
150
A
*3
IFSM
Forward current surge peak
Power dissipation
A
*2
PD
W/element
Tj
Junction temperature
℃
< MOSFET + Diode >
Parameter
Power dissipation
Symbl
lue
0.8
Unit
W/total
℃
*2
PD
Tstg
Operating junction and storage temperature rang
-5 to +150
llElectrical characteristics (Ta = 25°C
< MOSFET >
Values
Parameter
Symbol
IGSS
Conditions
= ±12V, V = 0V
Unit
Min.
-
Typ. Max.
V
V
Gate - Source lecurrent
-
±10
μA
V
GS
DS
Drain - Source breadown
voltage
BR)DSS
= 0V, I = 1mA
30
-
-
-
GS
D
Zero goltage
drin cnt
IDSS
V
DS
= 30V, V = 0V
-
1
μA
V
GS
VGS(th)
V
DS
V
GS
V
GS
V
GS
= 10V, I = 1mA
ate threshold voltage
0.5
-
1.5
240
250
340
D
= 4.5V, I = 1.5A
-
-
-
170
180
240
D
Static drain - source
on - state resistance
*4
RDS(on)
= 4V, I = 1.5A
mΩ
S
D
= 2.5V, I = 1.5A
D
Forward Transfer
Admittance
|Y |*4
V
DS
= 10V, I = 1.5A
1.5
-
-
fs
D
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristics (Ta = 25°C)
< MOSFET >
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
80
14
12
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
GS
= 10V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*4
td(on)
V
⋍ 15V, V = 4.5V
DD GS
tr*4
I = 0.75A
9
D
ns
*4
td(off)
R = 20Ω
Turn - off delay time
Fall time
15
L
tf*4
R = 10Ω
G
llGate charge characteristics (Ta = 25°C)
< MOSFET >
Values
Typ.
1.6
Parameter
Total gate charge
Sol
Citions
Unit
nC
Min.
Max.
*4
Qg
-
-
-
2.2
V
⋍ 15V, I = 1.5A
D
D
*4
Qgs
Gate - Source charge
Gate - Drain cha
0.5
-
-
= 4.5V
GS
*4
Q
0.3
llBodde electrical characteristics (Source-Drain) (Ta = 25°C)
MSFET >
Values
Typ.
-
Parameter
Symbol
Conditions
Unit
V
Min.
-
Max.
1.2
*4
VSD
Forward voltage
V
GS
= 0V, I = 0.75A
S
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3/12
20160711 - Rev.001
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Datasheet
llElectrical characteristics (Ta = 25°C)
< Diode >
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
0.36
0.
100
I = 0.1A
-
-
-
-
-
-
V
V
F
VF
IR
Forward voltage
I = 0.5A
F
V = 20V
Reverse current
μA
R
*1 Pw≦ 0μs, Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 60Hz・1cycle
*4 Pulsed
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristic curves <MOSFET>
Fig.1 Typical Output Characteristics(I)
Fig.2 Typical Output Characteristics(II)
Fig.3 Breakdown Voltage vs
ig.Typical Transfer Characteristics
ꢀꢀꢀꢀꢀJunction Temperatu
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristic curves <MOSFET>
Fig.5 Gate Threshold Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
Fig.6 Forward Transfer Admittance
vs. Drain Current
Fig.7 Drain Current Derating Crv
Fig.Static Drain - Source On - State
ꢀꢀResistance vs. Gate Source Voltage
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristic curves <MOSFET>
Fig.9 Static Drain - Source On - State
Fig.10 Static Drain - Source On - State
ꢀꢀResistance vs. Junction Temperature
ꢀꢀꢀꢀResistance vs. Drain Current (I)
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristic curves <MOSFET>
Fig.11 Static Drain - Source On - State
Fig.12 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IlI)
Fig.13 Static Drain - Source On Stte
ꢀꢀꢀꢀꢀResistance vs. Drain rret (IV)
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristic curves <MOSFET>
Fig.14 Typical Capacitance vs.
Fig.15 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.16 Dynamic Input Charactestis
Fig.17 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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20160711 - Rev.001
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ES6U41
Datasheet
llElectrical characteristic curves <Di>
Fig.18 Reverse Current vs.
Fig.19 Forward Current vs.
ꢀꢀꢀꢀꢀReverse Voltage
ꢀꢀꢀꢀꢀForward Voltage
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10/12
20160711 - Rev.001
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ES6U41
Datasheet
llMeasurement circuits
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT
Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT
Fig. 2-2 GATE CHARGE WVEFORM
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llNotice
1.
SBD has a large reverse leak current compto other type of diode. Therefore, it would
raise a junction tempratre, and increase a reverse power loss. Further rise of inside
temperature wocause a thermaruway. This built-in SBD has low V characteristics
F
and theree, hiher leak current. ease consider enough the surrounding temperature,
generatheof MOSFET d the reverse current.
2.
Tproduct might auship aging and breakdown under the large electrified environment.
Pleae consider to dsign ESD protection circuit.
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20160711 - Rev.001
ES6U41
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Datasheet
llDimensions
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or able for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products or Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality contsystem. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implemenyour own responsibilities, adequate
safety measures including but not limited to fail-safe design against the pical ury, damage to any property, which
a failure or malfunction of our Products may cause. The following are exaof safety measures:
[a] Installation of protection circuits or other protective devices to imsystem safety
[b] Installation of redundant circuits to reduce the impact of singr multiple circuit faiure
3. Our Products are designed and manufactured for use under stdard conditions d not under any special or
extraordinary environments or conditions, as exemplifielow. Accordingly, OHM shall not be in any way
responsible or liable for any damages, expenses or losses isig from the usof aROHM’s Products under any
special or extraordinary environments or conditionsf you intend to uProducts under any special or
extraordinary environments or conditions (as exemfied elow), youindeeverification and confirmation of
product performance, reliability, etc, prior to use, st necessary:
[a] Use of our Products in any types of liquid, iluding water, oils, chemals, and organic solvents
[b] Use of our Products outdoors or in pcwhere the Producae xposed to direct sunlight or dust
[c] Use of our Products in places whthe Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places whethe Products are oed to static electricity or electromagnetic waves
[e] Use of our Products in proto heat-prodmponents, plastic cords, or other flammable items
[f] Sealing or coating our Prowith resin or ing materials
[g] Use of our Products without cleaning residue o(even if you use no-clean type fluxes, cleaning residue of
flux is recommende; or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Pcts in places subjecdw condensation
4. The Producnot subject to radiation-proof design.
5. Please verify aconfirm chacteris f the final or mounted products in using the Products.
6. In pular, if a transienad arge amount of load applied in a short period of time, such as pulse. is applied,
confirman of performance haracteristics after on-board mounting is strongly recommended. Avoid applying power
ding normal rated powerexceeding the power rating under steady-state loading condition may negatively affect
ct performance and reliability.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. e take proper
caution in your manufacturing process and storage so that voltage exceeding the Products mimung will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body uipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stn the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability oducts out of recommened storage time period
may be degraded. It is strongly recommended to confirm solderlity fore using Products owhich storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is icaed on a carton with symbol. Otherwise bent leads
may occur due to excessive stress applied when droppof a carton.
4. Use Products within the specified time after openia midity barrier bagaking irequired before using Products of
which storage time is exceeding the recommended orage time period
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A two-dimensional barcode printed on ROHrodcts label is for M’s internal use only.
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When disposing Products please dispoem properly uuthorized industry waste company.
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Since concerned goods mbe fallen under listed ems of export control prescribed by Foreign exchange and Foreign
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weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号:
ES6U42T2R
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN
ROHM
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