RB876W [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RB876W |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总3页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB876W
Diodes
Schottky barrier diode
RB876W
!Applications
High frequency detection
!External dimensions (Units : mm)
1.6 0.2
0.7 0.1
0.55 0.1
1.0 0.1
0.5 0.5
0.1
0.05
!Features
1) Ultra small mold type. (EMD3)
2) Low Ct and high detection efficiency.
0.2
0.1 Min.
(1)
(2)
0∼0.1
3 X
(3)
0.3
!Construction
Silicon epitaxial planar
0.1
0.05
0.15 0.05
ROHM : EMD3
EIAJ :
JEDEC :
!Circuit
K
A
A,K
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Reverse voltage (DC)
Forward current (DC)
Junction temperature
Storage temperature
V
R
5
10
I
F
mA
°C
Tj
125
Tstg
−40~+125
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
−
Max.
0.35
120
Unit
Conditions
Forward voltage
VF
−
−
−
V
I
F
=1.0mA
=5.0V
=1.0V, f=1.0MHz
Reverse current
I
R
−
µA
pF
V
R
Capacitance between terminal
CT
0.53
0.80
V
R
∗ Please pay attention to static electricity when handling.
1/2
RB876W
Diodes
!Electrical characteristic curves (Ta=25°C)
10
1000
100
10
0.9
0.8
125°C
75°C
125 C
75 C
25°C
−25°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
f=1MHz
1
f=1.8GHz
25 C
−25 C
0.1
0.01
1
0
0
400
800
1200
(mV)
1600
0
1
2
3
4
5
0
1
2
3
4
5
6
FORWARD VOLTAGE : V
F
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between
terminals charasteristics
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
相关型号：
RB886ASAFH (新产品)
RB886ASAFH is a detection schottky diode with high detection efficiency and low capacitance (Ct=0.8pF) , suitable for high frequency detection. This product complies AEC-Q101 qualified.
ROHM
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