RFUS20TM4SFHC9 [ROHM]
Rectifier Diode,;型号: | RFUS20TM4SFHC9 |
厂家: | ROHM |
描述: | Rectifier Diode, 超快恢复二极管 超快速恢复二极管 局域网 测试 |
文件: | 总6页 (文件大小:840K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUS20TM4SFH
Series
Dimensions (Unit : mm)
Structure
+0.3
−0.1
+0.3
−0.1
Ultra Fast Recovery
+0.2
−0.1
(1) (2) (
Applications
General rectification
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
05
Construction
Silicon epitaxial planer
Absolute maximum ingT=25C)
Param
Repetitive peak reversoltage
Reverse voltage
Conditions
Limits
430
Unit
V
Symbo
VR
Duty0.5
Direct voltage
430
V
VR
60Hz half sin wave, Resistance load,
Average rectifieoward current
Foard nt surge peak
Io
20
A
A
Tc=68C
60Hz half sin wave, Non-repetitive
IFSM
100
one cycle peak value, Tj=25 C
ntemperature
Sage temperature
150
Tj
C
C
55 to 150
Tstg
Electrical characteristics (Tj=25C)
Parameter
Conditions
IF=20A
Min.
Typ.
1.4
0.05
24
Max.
1.6
10
Symbol
VF
Unit
V
-
-
-
-
Forward voltage
Reverse current
VR=430V
IR
μA
Reverse recovery time
Thermal resistance
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
35
trr
ns
-
2
Rth(j-c)
C/W
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2011.06 - Rev.A
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1/3
Data Sheet
RFUS20TM4SFH
ꢀ
Electrical characteristic curves
100
100000
10000
1000
100
1000
100
10
Tj=150C
f=1MHz
Tj=125C
Tj=25C
Tj=150C
10
Tj=125C
Tj=25C
Tj=75C
Tj=75C
1
10
Tj=25C
1
0.1
0
50 100 150 200 250 300 350 400 450
0
500
1000
1500
2000
2500
0
5
10
20
25
30
REVERSE VOLTAGE : VR(V)
-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
400
39
80
370
360
1500
1000
100
10
Ta=25C
f=1MHz
VR=0V
Tj=25C
IF=20A
Tj=25C
VR=430V
n=20pcs
1450
1400
1350
1300
1250
1200
n=20pcs
n=10pcs
AVE : 49.0nA
AVE : 1373mV
AVE : 372.3pF
1
SPERSION MAP
Ct DISPERSION MAP
V
F DISPERSION MAP
1000
100
10
30
0
15
10
5
300
250
200
150
100
50
Tj=C
0.5A
IR=1A
Irr=0.25×IR
n=10pcs
A.9ns
AVE : 183A
IFSM
1cyc
I
8.3ms 8.3ms
1cyc.
8.3ms
1
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
I
FSM DISRESION MAP
7
6
5
4
3
2
1
0
10
1000
100
10
IFSM
AVE : 6.05kV
time
Rth(j-c)
1
AVE : 0.93kV
0.1
C=200pF
C=100pF
0.001
0.01
0.1
1
10
100
1000
1
10
100
R=0
R=1.5k
TIME : t(ms)
TIME : t(s)
ESD DISPERSION MAP
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RFUS20TM4SFH
ꢀ
70
60
35
30
25
20
15
10
5
0A
0V
Io
D.C.
VR
t
D=0.8
D.C.
D=t/T
VR=350V
Tj=150C
T
D=0.8
D=0.5
D=0.5
half sin wave
50
40
D=0.2
D=0.1
half sin wave
D=0.2
30
20
10
0
D=0.05
D=0.1
D=0.05
0
0
5
10
15
20
25
30
35
0
30
60
90
120
150
CASE TEMPARATURE : Tc(C)
AVERAGE RECTIFIED
Derating Curve"(Io-Tc)
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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3/3
2011.06 - Rev.A
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exceeding norrated poweexcinthe power rating under steady-state loading condition may negatively affect
prodct performance and reliabi.
7. De-rate wer Dissipation () depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
nt temperature.
Confirm that operation temperature is within the specified range described in the product specification.
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