RW1A013ZP [ROHM]

1.5V Drive Pch MOSFET; 1.5V驱动P沟道MOSFET


型号：	RW1A013ZP
厂家：	ROHM
描述：	1.5V Drive Pch MOSFET 1.5V驱动P沟道MOSFET 驱动
文件：	总5页 (文件大小：204K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1.5V Drive Pch MOSFET

RW1A013ZP

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

WEMT6

(6) (5) (4)

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

(1) (2) (3)

Abbreviated symbol : XC

zApplication

zInner circuit

Switching

(6)

(5)

(4)

∗2

zPackaging specifications

∗1

Package

Taping

T2R

Type

Code

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

Basic ordering unit (pieces)

8000

RW1A013ZP

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

−12

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

1.3

Drain current

∗1

I_DP

2.6

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.5

−2.6

0.7

∗1

∗2

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of Storage temperature

−55 to +150

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

179

Unit

Channel to ambient

∗ When mounted on a ceramic board

°C / W

www.rohm.com

2009.06 - Rev.A

1/4

RW1A013ZP

Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS= 10V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}−12

Zero gate voltage drain current

µA

I_D= −1mA, V_GS=0V

I_DSS

−

−1

V_DS= −12V, V_GS=0V

_DS= −6V, I_D= −1mA

Gate threshold voltage

V_{GS (th)}−0.3

−

−1.0

260

390

600

−

190

280

400

mΩ I_D= −1.3A, V_GS= −4.5V

mΩ I_D= −0.6A, V_GS= −2.5V

mΩ I_D= −0.6A, V_GS= −1.8V

∗

−

Static drain-source on-state

resistance

R_{DS (on)}

−

1.4

530 1060 mΩ I_D= −0.2A, V_GS= −1.5V

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

−

290

−

V_DS= −6V, I_D= −1.3A

V_DS= −6V

−

C_oss

C_rss

t_{d (on)}

V_GS=0V

f=1MHz

∗

DD −6V

= −0.6A

GS= −4.5V

Turn-off delay time

Fall time

t_{d (off)}

t_f

10Ω

=10Ω

Total gate charge

Gate-source charge

Q_g

2.4

0.6

0.4

nC V_DD−6V

4.6Ω

=10Ω

I_D= −1.3A

Q_gs

Q_gd

−

V_GS= −4.5V

Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

∗

Forward voltage

−

−1.2

I_S= −1.3A, V_GS=0V

∗Pulsed

www.rohm.com

2009.06 - Rev.A

2/4

RW1A013ZP

Data Sheet

zElectrical characteristics

1.5

Ta=25°C

Pulsed

Ta=25°C

V_DS= -6V

Pulsed

V_GS= -10V

_GS= -4.5V

Pulsed

V_GS= -4.5V

V_GS= -2.5V

V_GS= -1.8V

V_GS= -2.5V

1.5

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

V_GS= -1.8V

V_GS= -1.5V

0.1

V_GS= -1.5V

V_GS= -1.2V

0.01

0.001

0.5

V_GS= -1.2V

V_GS= -1.0V

0.5

1.5

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.2 Typical Output Characteristics( )

Ⅱ

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.1 Typical Output Characteristics(

)

Ⅰ

10000

1000

100

10000

1000

100

Ta=25°C

Pulsed

V_GS= -4.5V

Pulsed

V_GS= -2.5V

Pulsed

1000

100

V_GS= -1.5V

_GS= -1.8V

_GS= -2.5V

_GS= -4.5V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

0.01

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.5 Static Drain-Source On-State

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(

)

Resistance vs. Drain Current(

)

Ⅱ

)

Ⅲ

Ⅰ

10000

1000

100

10000

1000

100

V_GS= -1.8V

Pulsed

V_GS= -1.5V

Pulsed

V_DS= -6V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1

0.01

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : -I_D[A]

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.9 Forward Transfer Admittance

vs. Drain Current

)

Ⅴ

)

Ⅳ

www.rohm.com

2009.06 - Rev.A

3/4

RW1A013ZP

Data Sheet

600

500

400

300

200

100

1000

100

Ta=25°C

Pulsed

V_GS=0V

Ta=25°C

_DD= -6V

_GS= -4.5V

Pulsed

t_f

I_D= -0.6A

I_D= -1.3A

R_G=10Ω

t_d(off)

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

t_d(on)

t_r

0.01

0.5

1.5

0.01

0.1

SOURCE-DRAIN VOLTAGE : -V_SD[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

DRAIN-CURRENT : -I_D[A]

Fig.11 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.10 Reverse Drain Current

vs. Sourse-Drain Voltage

Fig.12 Switching Characteristics

1000

100

Ciss

Ta=25°C

V_DD= -6V

I_D= -1.3A

Coss

Ta=25°C

f=1MHz

Crss

_G=10Ω

V_GS=0V

Pulsed

0.5

1.5

2.5

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : -V_DS[V]

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

zMeasurement circuits

Pulse width

10%

50%

VDS

50%

90%

D.U.T.

10%

90%

10%

90%

^DStd(on)

td(off)

toff

Fig.1-1 Switching time measurement circuit

Fig.1-2 Switching waveforms

VDS

D.U.T.

G(Const.)

Qgd

VDD

Charge

Fig.2-1 Gate charge measurement circuit

Fig.2-2 Gate charge waveform

zNotice

This product might cause chip aging and breakdown under the large electrified environment .

Please consider to design ESD protection circuit.

www.rohm.com

2009.06 - Rev.A

4/4

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

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R0039

RW1A013ZP [ROHM]

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