UMF22N [ROHM]
Power management (dual transistors); 电源管理（双晶体管）
| 型号： | UMF22N |
| 厂家： | 
ROHM |
| 描述： | Power management (dual transistors) |
| 文件： | 总5页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF22 / UMF22N
Transistors
Power management (dual transistors)
EMF22 / UMF22N
2SC5585 and DTC114E are housed independently in a EMT6 or UMT6 package.
zExternal dimensions (Units : mm)
zApplication
EMF22
Power management circuit
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : F22
UMF22N
zStructure
Silicon epitaxial planar transistor
1.25
2.1
zEquivalent circuits
(3)
(2) (1)
0.1Min.
DTr2
Tr1
Each lead has same dimensions
R1
ROHM : UMT6
EIAJ : SC-88
R2
Abbreviated symbol :F22
(4)
(5)
(6)
R
1
=10kΩ
=10kΩ
R2
zPackaging specifications
Type
Package
EMF22 UMF22N
EMT6
F22
UMT6
F22
Marking
Code
T2R
TR
Basic ordering unit(pieces)
8000
3000
1/4
EMF22 / UMF22N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
15
12
6
Unit
V
V
VCBO
VCEO
VEBO
V
I
C
500
1.0
150(TOTAL)
150
−55~+150
mA
A
mW
°C
°C
Collector current
1
2
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
1 Single pulse PW=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Symbol
Limits
50
Unit
V
Supply voltage
V
CC
Input voltage
Collector current
V
IN
−10~+40
100
V
1
2
I
C
mA
mA
mW
°C
I
O
50
Output current
Power dissipation
P
Tj
Tstg
C
150(TOTAL)
150
−55~+150
Junction temperature
Range of storage temperature
1 Characteristics of built-in transistor.
°C
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
12
15
6
I
I
I
C
=1mA
=10µA
−
−
V
C
−
−
V
E
=10µA
CB=15V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
100
100
250
680
−
nA
nA
mV
−
V
V
Emitter cut-off current
I
−
−
Collector-emitter saturation voltage
DC current gain
V
−
90
−
I
C
=200mA, I
B
=10mA
=10mA
=−10mA, f=100MHz
=0mA, f=1MHz
h
270
−
V
V
V
CE=2V, I
C
Transition frequency
f
T
320
7.5
MHz
pF
CE=2V, IE
CB=10V, I
E
Collector output capacitance
Cob
−
−
DTr2
Parameter
Symbol
Min.
−
Typ.
−
Max.
0.5
−
Unit
V
Conditions
V
V
I(off)
V
CC=5V, I
=0.3V, I
/I =10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
O
=100µA
Input voltage
I(on)
3
−
VO
O
=10mA
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
0.88
0.5
−
V
mA
µA
−
I
O I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
−
−
I=0V
G
I
30
7
−
O
O
−
10
13
R1
kΩ
R2/R1
1.2
−
−
0.8
−
1
−
MHz
250
VCE=10V, I
E
=−5mA, f=100MHz
f
T
Transition frequency of the device
2/4
EMF22 / UMF22N
Transistors
zElectrical characteristic curves
Tr1
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Pulsed
Ta=125°C
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
C
°
C
C
°
I
C
/I
/I
/I
B
=50
°
125
40
25
=
−
=
=
Ta
Ta
I
C
B=20
Ta
I
C
B
=10
1 1
10
100
1000
11
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
Ta=25°C
Pulsed
I
C B=20
/I
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
Ta=125°C
100
10
100
10
Ta=25°C
Ta=125°C
Ta=−40°C
11
10
100
1000
11
10
100
1000
10 1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
vs. collector current ( ΙΙ )
1000
I
f
E
=
0A
1MHz
25°C
=
Ta
=
100
Cib
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
EMF22 / UMF22N
Transistors
DTr2
10m
5m
100
1k
V
O
=0.3V
V
CC=5V
VO=5V
50
500
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
20
10
200
500µ
100
50
Ta=−40°C
25°C
100°C
5
200µ
100µ
50µ
2
20
1
10
5
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
0
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100°C
25°C
200m
−40°C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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