MCH5823 [SANYO]
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications; MOSFET ： P通道MOSFET硅SBD ：肖特基二极管通用开关器件应用
| 型号： | MCH5823 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
| 文件： | 总5页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN7757
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
MCH5823
General-Purpose Switching Device
Applications
Features
•
Composite type with a P-Channel Silicon MOSFET (MCH3339) and a Schottky Barrier Diode (SS10015M)
contained in one package facilitating high-density mounting.
[MOSFET]
•
Low ON-resistance.
•
Ultrahigh-speed switching.
[SBD]
•
Short reverse recovery time.
•
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
V
V
--12
±12
--1.5
--6.0
0.8
V
V
DSS
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
I
PW≤10µs, duty cycle≤1%
A
DP
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
W
°C
°C
D
Tch
150
Tstg
--55 to +125
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QZ
V
15
V
V
RRM
V
15
RSM
I
O
1
3
A
I
50Hz sine wave, 1 cycle
A
FSM
Tj
--55 to +125
--55 to +125
°C
°C
Tstg
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004PE TS IM TB-00001070 No.7757-1/5
MCH5823
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0
--12
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=--12V, V =0
GS
--1
DSS
GSS
DS
GS
DS
DS
I
=±9.6V, V =0
DS
±10
V
(off)
GS
=--6V, I =--1mA
--1.0
0.72
--2.4
D
Forward Transfer Admittance
yfs
=--6V, I =--0.8A
1.2
200
340
370
145
45
S
D
R
(on)1
I
D
I
D
I
D
=--0.8A, V =--10V
GS
270
490
530
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=--0.4A, V =--4.5V
GS
=--0.1A, V =--4V
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=--6V, f=1MHz
DS
=--6V, f=1MHz
DS
=--6V, f=1MHz
DS
Coss
Crss
35
t (on)
d
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
7.5
20
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
16
t
12
f
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Qg
Qgs
Qgd
V
V
V
=--10V, V =--10V, I =--1.5A
GS
3.8
0.5
0.5
--0.94
DS
DS
DS
D
=--10V, V =--10V, I =--1.5A
GS
D
=--10V, V =--10V, I =--1.5A
GS
D
V
SD
I
S
=--1.5A, V =0
GS
--1.5
Reverse Voltage
V
I
=0.5mA
15
V
V
R
R
V 1
F
I =0.3A
F
0.30
0.33
0.33
0.36
90
Forward Voltage
V 2
F
I =0.5A
F
V
Reverse Current
I
R
V
V
=6V
R
R
µA
pF
ns
Interterminal Capacitance
Reverse Recovery Time
C
=10V, f=1MHz, 1 cycle
20
t
rr
I =I =100mA, See specified Test Circuit.
F R
10
Package Dimensions
unit : mm
Electrical Connection
2195
5
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
0.3
0.15
5
1
4
Top view
1
2
3
3
2
0.65
1 : Gate
5
1
4
3
2 : Source
3 : Anode
4 : Cathode
5 : Drain
2.0
(Bottom view)
2
(Top view)
SANYO : MCPH5
No.7757-2/5
MCH5823
Switching Time Test Circuit
t
Test Circuit
rr
[MOSFET]
V
= --10V
DD
[SBD]
V
IN
0V
--10V
Duty≤10%
I
= --0.8A
D
V
IN
R =12.5Ω
L
D
V
OUT
50Ω
100Ω
10Ω
PW=10µs
D.C.≤1%
10µs
G
--5V
t
MCH5823
rr
P. G
50Ω
S
I
-- V
DS
I
-- V
GS
[MOSFET]
[MOSFET]
D
D
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--2.0
V
= --10V
DS
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
V
= --2.5V
GS
--0.2
0
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
IT05614
IT05613
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
[MOSFET]
DS
R
DS
(on) -- V
R
(on) -- Ta
DS
[MOSFET]
GS
800
700
600
500
400
300
200
700
600
500
400
300
200
Ta=25°C
--0.4A
--0.8A
I = --0.1A
D
100
0
100
0
0
--2
--4
--6
--8
--10
--12
IT05615
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT05616
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
GS
yfs -- I
D
I
-- V
[MOSFET]
[MOSFET]
F
SD
7
5
5
V
= --10V
V
=0
DS
GS
3
2
3
2
--1.0
7
5
3
2
1.0
7
5
--0.1
7
3
2
5
3
2
0.1
--0.01
--0.01
--0.4
2
3
5
7
2
3
5
7
--1.0
2
3
5 7
--0.6
--0.8
--1.0
--1.2
--0.1
IT05617
Drain Current, I -- A
Diode Forward Voltage, V
SD
-- V
IT05618
D
No.7757-3/5
MCH5823
[MOSFET]
= --10V
[MOSFET]
f=1MHz
SW Time -- I
Ciss, Coss, Crss -- V
DS
D
5
3
2
V
V
DD
3
2
= --10V
GS
100
7
5
100
7
5
3
2
t
f
10
t (on)
d
3
2
7
5
3
2
10
1.0
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10
--12
IT05620
--0.1
--1.0
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT05619
D
DS
V
-- Qg
[MOSFET]
A S O
[MOSFET]
GS
--10
--10
7
5
I
= --6.0A
<10µs
V
= --10V
DP
DS
--9
--8
--7
--6
--5
--4
--3
--2
I = --1.5A
D
3
2
I = --1.5A
D
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
--0.1
7
5
DS
3
2
Ta=25°C
--1
0
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.01
0
1
2
3
4
2
3
5
7
2
3
5
7
2
3
5
7
2
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
IT05621
Drain-to-Source Voltage, V
-- V
IT06928
DS
P
-- Ta
[MOSFET]
D
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT06929
I
-- V
I
-- V
R R
[SBD]
[SBD]
F
F
100000
10
7
5
3
2
10000
1000
100
10
1.0
7
5
3
2
0.1
7
5
3
2
1.0
0.01
7
5
0.1
3
2
0.001
0.01
0
0.1
0.2
0.3
0.4
0.5
IT07150
0
5
10
15
IT07151
Forward Voltage, V -- V
Reverse Voltage, V -- V
F
R
No.7757-4/5
MCH5823
P (AV) -- I
C -- V
[SBD]
(4)(3)
(2)
[SBD]
F
O
R
0.7
0.6
0.5
0.4
0.3
0.2
2
(1)Rectangular wave θ=60°
f=1MHz
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(1)
100
7
5
Rectangular wave
3
2
θ
360°
Sine wave
0.1
0
180°
360°
10
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
2
3
5
7
2
3
5
7
2
1.0
10
IT07153
Reverse Voltage, V -- V
Average Forward Current, I -- A
IT07152
R
O
I
-- t
[SBD]
FSM
3.5
3.0
2.5
2.0
1.5
1.0
Current waveform 50Hz sine wave
IS
20ms
t
0.5
0
7
2
3
5
7
2
3
5
7
2
3
0.01
0.1
1.0
Time, t -- s
ID00338
Note on usage : Since the MCH5823 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
PS No.7757-5/5
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