BD939F [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD939F |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD939F
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220F) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
120
100
V
Open collector
7
V
3
6
A
ICM
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
A
PC
TC=25ꢀ
14
W
ꢀ
Tj
150
-50~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD939F
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
100
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA; IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IE=1mA; IC=0
V
IC=1A; IB=0.2A
IC=1A; IB=0.2A
VCB=120V; IE=0
VEB=7V; IC=0
0.7
1.5
50
V
V
µA
µA
IEBO
50
hFE-1
DC current gain
IC=0.2A ; VCE=4V
IC=1A ; VCE=4V
IC=0.25A ; VCE=10V
40
15
3
250
hFE-2
DC current gain
fT
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD939F
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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