BUW13AF [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BUW13AF
型号: BUW13AF
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUW13F BUW13AF  
DESCRIPTION  
·With TO-3PFa package  
·High voltage;high speed  
APPLICATIONS  
·Converters  
·Inverters  
·Switching regulators  
·Motor control systems  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
l
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
850  
1000  
400  
450  
9
UNIT  
BUW13F  
BUW13AF  
BUW13F  
BUW13AF  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
VCEO  
Collector-emitter voltage  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
A
W
15  
Collector current-peak  
Base current  
30  
6
IBM  
PT  
Base current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
9
TC=25ꢀ  
50  
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-a  
Thermal resistance from junction to ambient  
35  
K/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUW13F BUW13AF  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
IC=0.1A ; IB=0; L=25mH  
IC=10A; IB=2A  
MIN  
400  
450  
TYP.  
MAX  
UNIT  
BUW13F  
BUW13AF  
BUW13F  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
V
Collector-emitter  
saturation voltage  
VCEsat  
1.5  
1.6  
V
V
BUW13AF IC=8A; IB=1.6A  
BUW13F  
IC=10A; IB=2A  
Base-emitter  
saturation voltage  
VBEsat  
BUW13AF IC=8A; IB=1.6A  
VCE=Rated VCES; VBE=0  
Tj=125ꢀ  
1.0  
4.0  
ICES  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
mA  
mA  
IEBO  
VEB=9V; IC=0  
10  
35  
35  
hFE-1  
IC=20mA ; VCE=5V  
IC=1.5A ; VCE=5V  
10  
10  
hFE-2  
DC current gain  
Switching times resistive load  
ton  
Turn-on time  
Storage time  
Fall time  
1.0  
4.0  
0.8  
µs  
µs  
µs  
For BUW13F  
IC=10A ;IB1=-IB2=-2A  
ts  
For BUW13AF  
IC=8A ;IB1=-IB2=-1.6A  
tf  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUW13F BUW13AF  
PACKAGE OUTLINE  
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)  
3

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