BCP3669_15 [SECOS]
NPN Plastic-Encapsulate Transistor;
| 型号： | BCP3669_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic-Encapsulate Transistor |
| 文件： | 总2页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP3669
2 A , 80 V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
oHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
ꢁ
ꢁ
ꢁ
Small Flat Package.
Large Current Capacity.
High DC Current Gain
4
1
2
3
A
E
C
APPLICATION
LF Amplifiers, Various Drivers, Muting Circuit
B
D
F
G
H
K
MARKING
J
L
Millimeter
Min. Max.
Millimeter
3669
REF.
REF.
Min.
Max.
ꢀꢀꢀꢀ
Date Code
A
B
C
D
4.40
3.94
1.40
2.30
4.60
4.25
1.60
2.60
G
H
J
0.40
0.58
Collector
1.50 TYP
3.00 TYP
2
K
0.32
0.35
0.52
0.44
E
F
1.50
0.89
1.70
1.20
L
PACKAGE INFORMATION
1
Base
Package
MPQ
Leader Size
SOT-89
1K
7 inch
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
80
80
V
5
V
Continuous Collector Current
Total Power Dissipation
2
A
PD
1
W
°C
Junction, Storage Temperature
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
Typ
Max
Unit
V
Test condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
80
-
-
IC=100µA, IE=0
IC=100µA, IB=0
IE=100µA, IC=0
VCB=80V, IE=0
VBE=5V, IC=0
80
-
-
V
5
-
-
V
-
-
1
µA
µA
V
Emitter Cut-Off Current
IEBO
-
-
-
1
Collector-emitter saturation voltage 1
Base-emitter saturation voltage1
VCE(sat)
VBE(sat)
-
0.5
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
-
-
1.2
V
180
-
240
DC Current Gain1
hFE
40
-
-
-
-
-
-
-
Transition Frequency
Collector Output Capacitance
Turn on
fT
100
30
0.2
1
MHz VCE=2V, IC=500mA
Cob
TON
TSTG
-
pF
VCB=10V, f=1MHz
VCC=30V, RL=30Ω,
IC=1A,
IB1= -IB1=50mA
Duty Cycle≦1%
-
Storage time
-
µS
Fall time
Note:
Tf
-
0.2
-
1. Pulse Test: Pulse Width≦380µs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Oct-2014 Rev. A
Page 1 of 2
BCP3669
2 A , 80 V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Oct-2014 Rev. A
Page 2 of 2
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