SMG2318N_15 [SECOS]
N-Channel Logic Level MOSFET;型号: | SMG2318N_15 |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | N-Channel Logic Level MOSFET |
文件: | 总4页 (文件大小:474K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMG2318N
1.2 A, 30 V, RDS(ON) 160 mΩ
N-Channel Logic Level MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation.
A
L
3
3
Top View
C B
1
FEATURES
1
2
2
ꢀ
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board Space.
K
F
E
D
ꢀ
H
J
G
ꢀ
ꢀ
Fast switching speed.
Low Gate Charge
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
APPLICATION
0.10
0.45
0.85
0.20
0.55
1.15
DC-DC converters and power management
in portable and battery-powered products such as computers,
printer , PCMCIA cards, cellular and cordless telephones.
K
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
1
Package
MPQ
Leader Size
SC-59
3K
7 inch
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
1.2
V
TA=25°C
TA=70°C
Continuous Drain Current 1
Pulsed Drain Current 2
ID
A
1
IDM
IS
10
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
1.3
1.3
Power Dissipation 1
PD
W
°C
0.8
TJ, TSTG
-55~150
Thermal Resistance Rating
t≦5 sec RθJA
Maximum Junction to Ambient 1
250
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 1 of 4
SMG2318N
1.2 A, 30 V, RDS(ON) 160 mΩ
N-Channel Logic Level MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
Drain-Source Breakdown Voltage
Gate-Body Leakage
VGS(th)
V(BR)DSS
IGSS
0.8
1.7
-
2.1
-
V
V
VDS=VGS, ID=250µA
30
VGS=0, ID=250µA
-
-
±100
1
nA
VDS=0, VGS= ±20V
VDS=24V, VGS=0
-
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
µA
-
-
10
-
VDS=24V, VGS=0, TJ= 55°C
VDS =5V, VGS=4.5V
VGS=10V, ID=1.4A
ID(on)
3.5
-
A
-
-
-
-
-
125
230
190
1.8
0.7
160
260
250
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ VGS=4.5V, ID=1.2A, TJ= 55°C
VGS=4.5V, ID=1.2A
Forward Transconductance 1
Diode Forward Voltage
gfs
S
V
VDS=5V, ID=1.2A
IS=1.2A, VGS=0
VSD
1.2
Dynamic 2
VDS=10V,
VGS=4.5V,
ID=1.2A,
RL=6Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
1.9
0.5
0.9
6
2.7
-
nC
nS
-
15
31
32
42
VDS= 10V,
VGEN=10V,
RL=50Ω,
ID=1A
15
15
18
Turn-off Delay Time
Td(off)
Tf
Fall Time
Notes
1
2
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 2 of 4
SMG2318N
1.2 A, 30 V, RDS(ON) 160 mΩ
N-Channel Logic Level MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 3 of 4
SMG2318N
1.2 A, 30 V, RDS(ON) 160 mΩ
N-Channel Logic Level MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 4 of 4
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