SMG2336N_15 [SECOS]
N-Channel Enhancement MOSFET;型号: | SMG2336N_15 |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | N-Channel Enhancement MOSFET |
文件: | 总4页 (文件大小:447K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
A
L
3
3
Top View
C B
FEATURES
1
1
2
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
2
K
F
E
D
H
J
G
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
APPLICATION
0.10
0.20
K
0.45
0.55
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±12
V
V
TA=25°C
TA=70°C
5.3
Continuous Drain Current 1
ID
A
4.1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
IS
30
A
A
1.9
TA=25°C
TA=70°C
1.3
Power Dissipation 1
PD
W
0.8
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Rating
t≦10 sec
RθJA
100
166
Maximum Junction to Ambient 1
°C/W
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 1 of 4
SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Typ.
Max.
Unit
Test Condition
Gate-Threshold Voltage
VGS(th)
IGSS
0.4
-
-
±100
1
V
VDS =VGS, ID=250μA
VDS =0, VGS=±12V
VDS =24V, VGS=0
Gate-Body Leakage
-
-
-
nA
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
IDSS
ID(ON)
μA
A
-
-
25
-
VDS =24V, VGS=0, TJ=55°C
VDS =5V, VGS=4.5V
VGS=4.5V, ID =4.1A
5
-
-
-
-
32
64
-
RDS(ON)
mΩ
-
VGS=2.5V, ID =3.3A
Forward Transconductance 1
Diode Forward Voltage
gFS
-
8
S
V
VDS=15V,,ID =4.1A
IS=9A, VGS=0
VSD
-
0.68
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
-
8
1.1
3.4
449
70
56
7
-
-
-
-
-
-
-
-
-
-
ID=4.1A
nC
pF
V
V
DS=15V
GS=4.5V
Qgd
Ciss
Coss
Crss
Td(ON)
Tr
V
V
DS=15V,
GS=0,
f=1MHz
ID= 4.1A,
VDS=15V
15
37
11
nS
VGEN=4.5V
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
-
-
RL=3.7Ω
GEN=6Ω
R
Notes:
1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 2 of 4
SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 3 of 4
SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 4 of 4
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