SSD30N15_15 [SECOS]
N-Ch Enhancement Mode Power MOSFET;
| 型号： | SSD30N15_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD30N15-60D
22A , 150V , RDS(ON) 69m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
TO-252(D-Pack)
These miniature surface mount MOSFET utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
ꢀ
Low RDS(on) provides higher efficiency and extends
battery life
A
B
C
D
ꢀ
Low thermal impedance copper leadframe TO-252
saves board space
ꢀ
ꢀ
Fast switching speed
High performance trench technology
G E
K
H F
N
O
P
APPLICATION
M
J
DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.35
5.20
2.15
0.45
6.8
2.40
5.40
0.64
6.80
5.50
2.40
0.58
7.5
3.0
6.25
1.20
J
K
M
N
O
P
2.30 REF.
0.64
0.50
0.9
0.90
1.1
1.65
0.15
0.58
0
PACKAGE INFORMATION
0.43
G
H
Package
MPQ
Leader Size
2
Drain
TO-252
2.5K
13 inch
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
150
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current 1
Pulsed Drain Current 2
TC=25°C
ID
22
A
IDM
60
A
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
TC=25°C
Operating Junction and Storage Temperature Range
IS
51
A
P D
50
W
°C
TJ, TSTG
-55~175
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
RθJA
RθJC
40
3
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
Note:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 1 of 4
SSD30N15-60D
22A , 150V , RDS(ON) 69m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
±100
1
V
VDS=VGS, ID =250µA
-
-
nA
VDS=0, VGS=±20V
VDS=120V, VGS=0
VDS=120V, VGS=0, TJ=55°C
VDS=5V, VGS=10V
VGS=10V, ID=10A
VGS=5.5V, ID=8A
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
µA
A
-
-
25
-
40
-
-
-
69
110
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
38
S
V
VDS=15V, ID=10A
IS=25.3A, VGS=0
VSD
-
0.8
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
-
-
-
24
7.8
9.7
13
-
-
-
-
-
-
-
-
-
-
VDS=75V
VGS=5.5V
ID=10A
nC
nS
pF
VDS=75V
ID=10A
VGEN=10V
RL=7.5Ω
RGEN=6Ω
22
Turn-off Delay Time
Fall Time
Td(off)
Tf
64
36
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
2599
167
90
VGS =0
VDS=15 V
f =1.0MHz
Reverse Transfer Capacitance
Notes:
1. Pulse test：Pulse width≦300 µs, duty cycle≦2％.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 2 of 4
SSD30N15-60D
22A , 150V , RDS(ON) 69m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 3 of 4
SSD30N15-60D
22A , 150V , RDS(ON) 69m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 4 of 4
相关型号：
©2020 ICPDF网 联系我们和版权申明