SSG4505 [SECOS]
Enhancement Mode Power Mos.FET; 增强模式电源Mos.FET
| 型号： | SSG4505 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Enhancement Mode Power Mos.FET |
| 文件： | 总7页 (文件大小：980K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
o
0.375 REF
The SSG4505 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
6.20
5.80
0.25
3.80
4.00
1.27Typ.
0.35
0.49
0.10~0.25
4.80
5.00
voltage applications such as DC/DC converters.
1.35
1.75
o
8 o
Features
Dimensions in millimeters
* Simple Drive Requirement
D1 D1 D2 D2
* Lower On-Resistance
8
6
5
7
* Fast Switching Performance
D1
D2
4505SS
Date Code
G2
G1
S1
S2
2
1
3
4
S1 G1 S2 G2
Absolute Maximum Ratings
Ratings
Parameter
Symbol
Unit
V
Drain-Source Voltage
VDS
30
±20
10
-30
Gate-Source Voltage
VGS
±20
-8.4
-6.7
-30
V
A
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
ID@TA=25oC
ID@TA=70oC
IDM
7.9
30
A
A
Total Power Dissipation
PD@TA=25 o
C
2.0
W
W/oC
Linear Derating Factor
0.016
o
C
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Thermal Resistance Junction-ambient3
62.5
Rthj-a
Max.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 1 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
Electrical Characteristics N Channel( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=250uA
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
30
_
o
V/o
C
_
C
Reference to 25 , ID=1mA
0.02
_
BVDS/ Tj
VGS(th)
IGSS
V
3.0
1.0
_
VDS=VGS, ID=250uA
_
_
±
±
VGS= 20V
100
nA
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25o )
C
uA
uA
VDS=30V,VGS=0
_
1
IDSS
Drain-Source Leakage Current (Tj=70o )
C
_
_
_
_
VDS=24V,VGS=0
VGS=10V, ID=6A
25
14
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
VGS=4.5V, ID=4A
20
_
_
_
_
_
_
Total Gate Charge2
Gate-Source Charge
23
65
_
Qg
Qgs
ID=9A
VDS=24V
VGS=4.5V
nC
6
_
_
14
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Qgd
Td(ON)
14
10
VDD=15V
ID=1 A
_
Tr
nS
VGS=10V
_
_
Td(Off)
Turn-off Delay Time
36
Ω
RG=3.3
Ω
RD=15
_
Tf
17
Fall Time
_
_
2830
_
Input Capacitance
1770
430
Ciss
VGS=0V
VDS=25V
f=1.0MHz
pF
S
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Coss
_
_
_
_
350
14
Crss
Gfs
VDS=10V, ID=9A
Source-Drain Diode
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
Forward On Voltage2
1.2
_
VSD
IS=1.7A,VGS=0V
V
_
_
nS
nC
Trr
31
25
Reverse Recovery Time
Reverse Recovery Charge
IS=9A,V GS=0V
dl/dt=100A/us
_
Qrr
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 2 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
Electrical Characteristics P-Channel( Tj=25oC Unless otherwise specified)
Min.
Typ.
Unit
Parameter
Symbol
Max.
Test Condition
_
_
V
VGS=0V, ID=-250uA
BVDSS
Drain-Source Breakdown Voltage
-30
_
Reference to 25o ,ID=-1mA
C
V/o
C
_
Breakdown Voltage Temp. Coefficient
GateThreshold Voltage
BVDS/ Tj
VGS(th)
IGSS
-0.02
_
V
-3.0
-1.0
_
VDS=VGS, ID=-250uA
_
_
±
±
VGS= 20V
Gate-Source Leakage Current
100
nA
_
Drain-Source Leakage Current (Tj=25o )
C
uA
uA
VDS=-30V,VGS=0
-1
-25
20
30
IDSS
oC
_
_
_
_
Drain-Source Leakage Current (Tj=70 )
VDS=-24V,VGS=0
VGS=-10V, ID=-8A
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
_
_
_
VGS=-4.5V, ID=-4A
Total Gate Charge2
Qg
27
4
45
_
ID=-8A
VDS=-24V
VGS=-4.5V
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Qgs
Qgd
_
_
18
16
_
_
Turn-on Delay Time2
Rise Time
Td(ON)
Tr
VDS=-15V
ID=-1A
_
_
_
11
VGS=-10V
nS
_
Td(Off)
Ω
RG=3.3
Turn-off Delay Time
Fall Time
40
Ω
RD=15
_
_
_
T
f
25
2530
_
Input Capacitance
1580
Ciss
Coss
Crss
Gfs
VGS=0V
VDS=-25V
f=1.0MHz
Output Capacitance
pF
S
540
450
_
_
_
_
Reverse Transfer Capacitance
Forward Transconductance
VDS=-10V, ID=-8A
14
Source-Drain Diode
Parameter
Symbol
Max.
Min.
Typ.
Unit
V
Test Condition
_
_
Forward On Voltage2
-1.2
_
VSD
IS=-1.7A,VGS=0V
_
_
nS
nC
Trr
40
32
Reverse Recovery Time
Reverse Recovery Charge
IS=-8A,VGS=0V
dl/dt=100A/us
_
Qrr
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 3 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 4 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
N-Channel
Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 5 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
P-Channel
Des
GND
capace input
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 6 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
Ω
P Channel -8.4A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
h tp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 7 of 7
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